JP2008537356A - 傾斜したシャワーヘッドを備える液浸リソグラフィシステム - Google Patents
傾斜したシャワーヘッドを備える液浸リソグラフィシステム Download PDFInfo
- Publication number
- JP2008537356A JP2008537356A JP2008507572A JP2008507572A JP2008537356A JP 2008537356 A JP2008537356 A JP 2008537356A JP 2008507572 A JP2008507572 A JP 2008507572A JP 2008507572 A JP2008507572 A JP 2008507572A JP 2008537356 A JP2008537356 A JP 2008537356A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- nozzle
- liquid
- immersion lithography
- nozzles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Abstract
【選択図】図7
Description
解像度=k1*λ/sin(θ)
である。
図6は、本発明の一実施形態によるリソグラフィシステムの部分600をさらに詳細に示す。部分600は、投影光学系PLの最終要素または下方部分、フードまたはシャワーヘッド604(本明細書を通して区別なく使用される)、基板ステージWTによって支持された基板W、任意選択の制御装置606、および任意選択の記憶装置610を含む。図6は、傾斜した構成がある液浸リソグラフィシステムの部分のこの実施形態の断面図(上)および平面図(下)の両方を示す。
pm=pamb−pw−(4σ/h)
ここでpambは周囲圧力、pwは引き出し圧力、σは表面張力、hはギャップ高さである(図9参照)。参照により全体が本明細書に組み込まれるJ. FayのIntroduction to Fluid Mechanics(MIT Press、マサチューセッツ州ケンブリッジ(1994))を概ね参照されたい。
pM=pamb−pw−(4σ/H)
以上では本発明の様々な実施形態を説明したが、これは例示によってのみ提示され、制限するものではないことを理解されたい。本発明の精神および範囲から逸脱することなく、形態および細部の様々な変更が可能であることが、当業者には明白である。したがって、本発明の幅および範囲は、上述した例示的実施形態のいずれにも制限されず、請求の範囲およびその同等物によってのみ定義されるものとする。
Claims (17)
- パターン形成されたビームを基板に誘導する投影光学系と、
前記投影光学系と前記基板の間に液体の流れを送出するシャワーヘッドと
を備え、
前記シャワーヘッドが、前記基板から異なる距離に配置された第一ノズルおよび第二ノズルを含む、液浸リソグラフィシステム。 - 前記液体の流れが前記基板に対して傾斜している、請求項1に記載の液浸リソグラフィシステム。
- 前記第一ノズルから前記第二ノズルへの液体の流れの方向が、ある角度で傾斜し、前記角度が、少なくとも部分的に前記投影光学系に対する前記基板のスキャン速度に基づいている、請求項1に記載の液浸リソグラフィシステム。
- 前記第一および第二ノズルの一方が注入ノズルであり、前記第一および第二ノズルの他方が回収ノズルであり、その機能は、前記投影光学系に対する前記基板のスキャン方向に基づいて動的に調節され、
前記注入ノズルが前記回収ノズルよりも前記基板の表面から遠く離れている、
請求項1に記載の液浸リソグラフィシステム。 - 前記注入ノズルから前記回収ノズルへの方向が、前記基板に対して約0.06度または約1から2度傾斜している、請求項1に記載の液浸リソグラフィシステム。
- 基板を露光するように構成された投影光学系と、
前記基板から異なる位置に配置された第一ノズルおよび第二ノズルと、
を備える、液浸リソグラフィシステム。 - 前記傾斜した液体の流れが、前記基板に対して約0.06度または約1から2度傾斜している、請求項6に記載の液浸リソグラフィシステム。
- 前記第一ノズルが、前記第二ノズルに対して前記基板から異なる距離に配置されて、前記傾斜した液体の流れを生成する、請求項6に記載の液浸リソグラフィシステム。
- 前記基板のスキャン方向に基づいて、前記第一または第二ノズルのうちいずれを前記基板に近い方に配置するかを変更するように構成された制御装置をさらに備える、請求項8に記載の液浸リソグラフィシステム。
- 前記制御装置は、前記基板の前記スキャン方向に基づいて、前記第一または第二ノズルの一方が前記基板に近い方に配置されるように、前記基板を動かすよう構成される、請求項9に記載の液浸リソグラフィシステム。
- 前記制御装置は、前記基板の前記スキャン方向に基づいて、前記第一または第二ノズルの一方が前記基板に近い方に配置されるように、前記第一または第二ノズルの一方を動かすよう構成される、請求項8に記載の液浸リソグラフィシステム。
- 投影システムを使用して、パターン形成された放射ビームを基板のターゲット部分に投影すること、
前記投影システムと前記基板の間のスペースを液浸液で少なくとも部分的に満たすために液体供給システムを使用すること、および、
前記基板に対してある角度で前記液体供給システムを配置することを通じて、傾斜した流れを生成すること
を含む、方法。 - 前記角度を、前記基板のスキャン速度に基づかせることをさらに含む、請求項12に記載の方法。
- 前記傾斜の方向を、前記基板のスキャン方向に基づかせることをさらに含む、請求項12に記載の方法。
- 前記基板が前記液体供給システムに対して傾斜するように、前記基板を動かすことをさらに含む、請求項12に記載の方法。
- 前記液体供給システムが前記基板に対して傾斜するように、前記液体供給システムを動かすことをさらに含む、請求項12に記載の方法。
- 前記液体供給システムに第一および第二ノズルを設けること、および、
前記第一および第二ノズルの一方が前記基板の表面に近い方にあり、前記傾斜した流れを生成するように、前記第一または第二ノズルの一方を前記第一または第二ノズルの他方に対して動かすこと
をさらに含む、請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/108,673 US20060232753A1 (en) | 2005-04-19 | 2005-04-19 | Liquid immersion lithography system with tilted liquid flow |
US11/108,673 | 2005-04-19 | ||
PCT/NL2006/000202 WO2006112699A1 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system comprising a tilted showerhead |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008537356A true JP2008537356A (ja) | 2008-09-11 |
JP4848003B2 JP4848003B2 (ja) | 2011-12-28 |
Family
ID=36602526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008507572A Expired - Fee Related JP4848003B2 (ja) | 2005-04-19 | 2006-04-19 | 傾斜したシャワーヘッドを備える液浸リソグラフィシステムおよび液浸リソグラフィ方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US20060232753A1 (ja) |
EP (1) | EP1872175A1 (ja) |
JP (1) | JP4848003B2 (ja) |
KR (2) | KR101131477B1 (ja) |
CN (2) | CN101776848B (ja) |
TW (2) | TWI336426B (ja) |
WO (1) | WO2006112699A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007035934A (ja) * | 2005-07-27 | 2007-02-08 | Nikon Corp | 露光装置及びデバイス製造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
KR101264939B1 (ko) * | 2004-09-17 | 2013-05-15 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4262252B2 (ja) * | 2005-03-02 | 2009-05-13 | キヤノン株式会社 | 露光装置 |
US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
US7435528B2 (en) * | 2005-06-09 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Processes and devices using polycyclic fluoroalkanes in vacuum and deep ultraviolet applications |
JP4706422B2 (ja) * | 2005-09-30 | 2011-06-22 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
NL1036186A1 (nl) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
KR101408783B1 (ko) * | 2007-12-07 | 2014-06-17 | 삼성전자주식회사 | 반도체 소자의 제조장치 및 이를 이용한 반도체 소자의제조방법 |
NL2004362A (en) * | 2009-04-10 | 2010-10-12 | Asml Netherlands Bv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
NL2005126A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005120A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2008183A (en) | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method. |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JP2004335821A (ja) * | 2003-05-09 | 2004-11-25 | Matsushita Electric Ind Co Ltd | パターン形成方法及び露光装置 |
JP2005005533A (ja) * | 2003-06-12 | 2005-01-06 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2005045223A (ja) * | 2003-06-27 | 2005-02-17 | Asml Netherlands Bv | リソグラフィ機器及びデバイスの製造方法 |
Family Cites Families (136)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE221563C (ja) | ||||
DE242880C (ja) | ||||
DE206607C (ja) | ||||
DE224448C (ja) | ||||
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
DE2963537D1 (en) | 1979-07-27 | 1982-10-07 | Tabarelli Werner W | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US4405701A (en) * | 1981-07-29 | 1983-09-20 | Western Electric Co. | Methods of fabricating a photomask |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
WO1998009278A1 (en) * | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
AU1505699A (en) | 1997-12-12 | 1999-07-05 | Nikon Corporation | Projection exposure method and projection aligner |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
DE10043315C1 (de) * | 2000-09-02 | 2002-06-20 | Zeiss Carl | Projektionsbelichtungsanlage |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
CN1791839A (zh) * | 2001-11-07 | 2006-06-21 | 应用材料有限公司 | 光点格栅阵列光刻机 |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
JP4117530B2 (ja) * | 2002-04-04 | 2008-07-16 | セイコーエプソン株式会社 | 液量判定装置、露光装置、および液量判定方法 |
WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
JP3977324B2 (ja) * | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG121819A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG115590A1 (en) * | 2002-11-27 | 2005-10-28 | Asml Netherlands Bv | Lithographic projection apparatus and device manufacturing method |
SG121829A1 (en) * | 2002-11-29 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
KR20050085236A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
US6992750B2 (en) * | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
CN101872135B (zh) | 2002-12-10 | 2013-07-31 | 株式会社尼康 | 曝光设备和器件制造法 |
CN100429748C (zh) | 2002-12-10 | 2008-10-29 | 株式会社尼康 | 曝光装置和器件制造方法 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
CN101852993A (zh) | 2002-12-10 | 2010-10-06 | 株式会社尼康 | 曝光装置和器件制造方法 |
KR101037057B1 (ko) | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TW200421444A (en) | 2002-12-10 | 2004-10-16 | Nippon Kogaku Kk | Optical device and projecting exposure apparatus using such optical device |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
DE60314668T2 (de) | 2002-12-19 | 2008-03-06 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
EP2945184B1 (en) | 2003-02-26 | 2017-06-28 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
WO2004086470A1 (ja) | 2003-03-25 | 2004-10-07 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP4902201B2 (ja) | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
CN103383527B (zh) * | 2003-04-10 | 2015-10-28 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
EP3062152B1 (en) | 2003-04-10 | 2017-12-20 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
KR101533206B1 (ko) | 2003-04-11 | 2015-07-01 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
WO2004093130A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
SG152078A1 (en) | 2003-04-17 | 2009-05-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
TWI237307B (en) | 2003-05-01 | 2005-08-01 | Nikon Corp | Optical projection system, light exposing apparatus and light exposing method |
KR20170119737A (ko) | 2003-05-06 | 2017-10-27 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
EP1477856A1 (en) | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100437358C (zh) | 2003-05-15 | 2008-11-26 | 株式会社尼康 | 曝光装置及器件制造方法 |
US6995833B2 (en) * | 2003-05-23 | 2006-02-07 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
TW201806001A (zh) * | 2003-05-23 | 2018-02-16 | 尼康股份有限公司 | 曝光裝置及元件製造方法 |
TW201415536A (zh) | 2003-05-23 | 2014-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
KR20180122033A (ko) | 2003-05-28 | 2018-11-09 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US7274472B2 (en) * | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
DE10324477A1 (de) * | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP2261742A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
TW201445617A (zh) | 2003-06-13 | 2014-12-01 | 尼康股份有限公司 | 基板載台、曝光裝置 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR101419663B1 (ko) | 2003-06-19 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
EP1491956B1 (en) * | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1494075B1 (en) * | 2003-06-30 | 2008-06-25 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1498777A1 (en) * | 2003-07-15 | 2005-01-19 | ASML Netherlands B.V. | Substrate holder and lithographic projection apparatus |
WO2005015315A2 (de) | 2003-07-24 | 2005-02-17 | Carl Zeiss Smt Ag | Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100407371C (zh) | 2003-08-29 | 2008-07-30 | 株式会社尼康 | 曝光装置和器件加工方法 |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
WO2005031465A2 (de) * | 2003-09-25 | 2005-04-07 | Infineon Technologies Ag | Immersions-lithographie-verfahren und vorrichtung zum belichten eines substrats |
JP4335213B2 (ja) | 2003-10-08 | 2009-09-30 | 株式会社蔵王ニコン | 基板搬送装置、露光装置、デバイス製造方法 |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
US20050231695A1 (en) * | 2004-04-15 | 2005-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for immersion lithography using high PH immersion fluid |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
-
2005
- 2005-04-19 US US11/108,673 patent/US20060232753A1/en not_active Abandoned
-
2006
- 2006-04-13 US US11/403,196 patent/US7256864B2/en not_active Expired - Fee Related
- 2006-04-18 TW TW095113826A patent/TWI336426B/zh not_active IP Right Cessation
- 2006-04-18 TW TW099116721A patent/TWI421652B/zh not_active IP Right Cessation
- 2006-04-19 CN CN2010101174178A patent/CN101776848B/zh not_active Expired - Fee Related
- 2006-04-19 WO PCT/NL2006/000202 patent/WO2006112699A1/en active Application Filing
- 2006-04-19 JP JP2008507572A patent/JP4848003B2/ja not_active Expired - Fee Related
- 2006-04-19 KR KR1020087025416A patent/KR101131477B1/ko not_active IP Right Cessation
- 2006-04-19 EP EP06733009A patent/EP1872175A1/en not_active Withdrawn
- 2006-04-19 KR KR1020077023958A patent/KR100897863B1/ko not_active IP Right Cessation
- 2006-04-19 US US11/911,704 patent/US8203693B2/en not_active Expired - Fee Related
- 2006-04-19 CN CN2006800132610A patent/CN101164015B/zh not_active Expired - Fee Related
- 2006-10-26 US US11/586,639 patent/US7253879B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JP2004335821A (ja) * | 2003-05-09 | 2004-11-25 | Matsushita Electric Ind Co Ltd | パターン形成方法及び露光装置 |
JP2005005533A (ja) * | 2003-06-12 | 2005-01-06 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2005045223A (ja) * | 2003-06-27 | 2005-02-17 | Asml Netherlands Bv | リソグラフィ機器及びデバイスの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007035934A (ja) * | 2005-07-27 | 2007-02-08 | Nikon Corp | 露光装置及びデバイス製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200702947A (en) | 2007-01-16 |
US7256864B2 (en) | 2007-08-14 |
US20060232753A1 (en) | 2006-10-19 |
KR100897863B1 (ko) | 2009-05-18 |
CN101776848A (zh) | 2010-07-14 |
WO2006112699A1 (en) | 2006-10-26 |
CN101164015A (zh) | 2008-04-16 |
US20060238721A1 (en) | 2006-10-26 |
TWI336426B (en) | 2011-01-21 |
US20070041002A1 (en) | 2007-02-22 |
US20100053574A1 (en) | 2010-03-04 |
TWI421652B (zh) | 2014-01-01 |
US7253879B2 (en) | 2007-08-07 |
CN101164015B (zh) | 2010-11-24 |
EP1872175A1 (en) | 2008-01-02 |
CN101776848B (zh) | 2012-07-04 |
TW201102770A (en) | 2011-01-16 |
JP4848003B2 (ja) | 2011-12-28 |
KR20080096609A (ko) | 2008-10-30 |
KR101131477B1 (ko) | 2012-04-12 |
KR20070114215A (ko) | 2007-11-29 |
US8203693B2 (en) | 2012-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4848003B2 (ja) | 傾斜したシャワーヘッドを備える液浸リソグラフィシステムおよび液浸リソグラフィ方法 | |
JP4473811B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
JP5085585B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
JP5744793B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
JP4728382B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
JP5161197B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
JP5161273B2 (ja) | 露光装置及びデバイス製造方法 | |
JP4954139B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
JP2010021568A (ja) | リソグラフィ装置及びデバイス製造方法 | |
JP2011018915A (ja) | リソグラフィ装置およびデバイス製造方法 | |
JP5412399B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
TWI420250B (zh) | 微影裝置和方法 | |
JP5503938B2 (ja) | 液浸リソグラフィ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101021 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110121 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110412 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110707 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110916 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111014 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141021 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |