JP2006313910A5 - - Google Patents

Download PDF

Info

Publication number
JP2006313910A5
JP2006313910A5 JP2006128497A JP2006128497A JP2006313910A5 JP 2006313910 A5 JP2006313910 A5 JP 2006313910A5 JP 2006128497 A JP2006128497 A JP 2006128497A JP 2006128497 A JP2006128497 A JP 2006128497A JP 2006313910 A5 JP2006313910 A5 JP 2006313910A5
Authority
JP
Japan
Prior art keywords
substrate table
gap
substrate
liquid
lithographic apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006128497A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006313910A (ja
JP4077849B2 (ja
Filing date
Publication date
Priority claimed from US11/120,176 external-priority patent/US7433016B2/en
Application filed filed Critical
Publication of JP2006313910A publication Critical patent/JP2006313910A/ja
Publication of JP2006313910A5 publication Critical patent/JP2006313910A5/ja
Application granted granted Critical
Publication of JP4077849B2 publication Critical patent/JP4077849B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006128497A 2005-05-03 2006-05-02 リソグラフィ装置およびデバイス製造方法 Active JP4077849B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/120,176 US7433016B2 (en) 2005-05-03 2005-05-03 Lithographic apparatus and device manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007324518A Division JP4820809B2 (ja) 2005-05-03 2007-12-17 リソグラフィ装置およびデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2006313910A JP2006313910A (ja) 2006-11-16
JP2006313910A5 true JP2006313910A5 (enExample) 2007-07-26
JP4077849B2 JP4077849B2 (ja) 2008-04-23

Family

ID=36716876

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2006128497A Active JP4077849B2 (ja) 2005-05-03 2006-05-02 リソグラフィ装置およびデバイス製造方法
JP2007324518A Active JP4820809B2 (ja) 2005-05-03 2007-12-17 リソグラフィ装置およびデバイス製造方法
JP2010048947A Expired - Fee Related JP5235926B2 (ja) 2005-05-03 2010-03-05 リソグラフィ装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2007324518A Active JP4820809B2 (ja) 2005-05-03 2007-12-17 リソグラフィ装置およびデバイス製造方法
JP2010048947A Expired - Fee Related JP5235926B2 (ja) 2005-05-03 2010-03-05 リソグラフィ装置

Country Status (7)

Country Link
US (10) US7433016B2 (enExample)
EP (4) EP2339403B1 (enExample)
JP (3) JP4077849B2 (enExample)
KR (1) KR100706922B1 (enExample)
CN (3) CN101794083B (enExample)
SG (1) SG126920A1 (enExample)
TW (2) TWI410745B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2864823B1 (fr) 2004-01-05 2006-08-18 Oreal Tete de distribution verrouillable
KR101105784B1 (ko) * 2005-02-10 2012-01-17 에이에스엠엘 네델란즈 비.브이. 침지 액체, 노광 장치, 및 노광 프로세스
US7433016B2 (en) * 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006122577A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Method of distancing a bubble and bubble displacement apparatus
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4923480B2 (ja) * 2005-08-23 2012-04-25 株式会社ニコン 露光装置及びデバイス製造方法、計測部材
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8514365B2 (en) * 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
NL2002983A1 (nl) * 2008-06-26 2009-12-29 Asml Netherlands Bv A lithographic apparatus and a method of operating the lithographic apparatus.
JP2010118527A (ja) * 2008-11-13 2010-05-27 Canon Inc 露光装置、およびデバイス製造方法
NL2004305A (en) * 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
SG188036A1 (en) 2011-08-18 2013-03-28 Asml Netherlands Bv Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
KR102021432B1 (ko) * 2012-05-22 2019-09-16 에이에스엠엘 네델란즈 비.브이. 센서, 리소그래피 장치 및 디바이스 제조 방법
KR102054322B1 (ko) 2012-05-29 2019-12-10 에이에스엠엘 네델란즈 비.브이. 대상물 홀더 및 리소그래피 장치
CN104570618B (zh) * 2014-12-25 2016-08-17 浙江大学 基于亲疏水交替表面的浸没流场密封装置
CN104597720B (zh) * 2015-01-15 2016-08-17 浙江大学 一种用于浸没式光刻机的气液隔离装置
CN113189849B (zh) 2021-04-22 2023-08-11 中国科学院光电技术研究所 一种近场光刻浸没系统及其浸没单元和接口模组

Family Cites Families (156)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE206607C (enExample)
DE242880C (enExample)
DE221563C (enExample)
DE224448C (enExample)
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
US3647587A (en) * 1969-06-23 1972-03-07 Burlington Industries Inc Method of installing invisible seams
ATE1462T1 (de) 1979-07-27 1982-08-15 Werner W. Dr. Tabarelli Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (enExample) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (enExample) 1986-01-24 1987-08-01
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS63157419U (enExample) 1987-03-31 1988-10-14
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5195577A (en) 1989-10-26 1993-03-23 Mitsubishi Denki Kabushiki Kaisha Cooling device for power semiconductor switching elements
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US6104687A (en) 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
TWI242111B (en) 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
GB0014946D0 (en) * 2000-06-20 2000-08-09 Cerestar Holding Bv Starch composition and the use thereof in the wet-end of paper preparation
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
TW567400B (en) 2000-11-23 2003-12-21 Asml Netherlands Bv Lithographic projection apparatus, integrated circuit device manufacturing method, and integrated circuit device manufactured by the manufacturing method
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
EP1446703A2 (en) 2001-11-07 2004-08-18 Applied Materials, Inc. Optical spot grid array printer
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
JP3727317B2 (ja) 2002-03-08 2005-12-14 エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ リソグラフィに使用するためのマスク、マスクを作成する方法、リソグラフィ装置、およびデバイス製造方法
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
JP4669922B2 (ja) * 2002-03-14 2011-04-13 独立行政法人農業生物資源研究所 植物にストレス耐性を付与する新規ジテルペノイド化合物
US20040011780A1 (en) 2002-07-22 2004-01-22 Applied Materials, Inc. Method for achieving a desired process uniformity by modifying surface topography of substrate heater
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
EP1420300B1 (en) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121819A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
AU2003289271A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
JP4179283B2 (ja) 2002-12-10 2008-11-12 株式会社ニコン 光学素子及びその光学素子を用いた投影露光装置
KR20050062665A (ko) * 2002-12-10 2005-06-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
CN100429748C (zh) 2002-12-10 2008-10-29 株式会社尼康 曝光装置和器件制造方法
KR101085372B1 (ko) 2002-12-10 2011-11-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
KR20050085236A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4184346B2 (ja) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上のスポットを照射するための方法及び装置における液体除去
USRE46433E1 (en) 2002-12-19 2017-06-13 Asml Netherlands B.V. Method and device for irradiating spots on a layer
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
WO2004086470A1 (ja) * 2003-03-25 2004-10-07 Nikon Corporation 露光装置及びデバイス製造方法
KR101177331B1 (ko) 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
KR101369016B1 (ko) 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
EP3352015A1 (en) 2003-04-10 2018-07-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
JP4488005B2 (ja) 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
KR20180054929A (ko) 2003-04-11 2018-05-24 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
EP2161620A1 (en) 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
SG194246A1 (en) 2003-04-17 2013-11-29 Nikon Corp Optical arrangement of autofocus elements for use with immersion lithography
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7274472B2 (en) 2003-05-28 2007-09-25 Timbre Technologies, Inc. Resolution enhanced optical metrology
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261741A3 (en) 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101242815B1 (ko) * 2003-06-13 2013-03-12 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2466383B1 (en) 2003-07-08 2014-11-19 Nikon Corporation Wafer table for immersion lithography
JP4729876B2 (ja) * 2003-07-09 2011-07-20 株式会社ニコン 露光装置、露光方法、並びにデバイス製造方法
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
JP4376718B2 (ja) * 2003-07-28 2009-12-02 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、デバイス製造方法、及び基板
EP1653501B1 (en) 2003-07-28 2012-09-19 Nikon Corporation Exposure apparatus, device producing method, and exposure apparatus controlling method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
EP3223053A1 (en) 2003-09-03 2017-09-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
JP4513299B2 (ja) 2003-10-02 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
TW201738932A (zh) * 2003-10-09 2017-11-01 尼康股份有限公司 曝光裝置及曝光方法、元件製造方法
JP2005159322A (ja) 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
KR101345443B1 (ko) 2003-12-15 2013-12-27 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP2005191381A (ja) 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP2005191393A (ja) 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
JP4018647B2 (ja) 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
JP4510494B2 (ja) 2004-03-29 2010-07-21 キヤノン株式会社 露光装置
JP2005286068A (ja) 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
CN1965389B (zh) 2004-06-09 2011-08-10 尼康股份有限公司 基板保持装置、具备其之曝光装置及方法、元件制造方法
US7481867B2 (en) * 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
US20060001851A1 (en) * 2004-07-01 2006-01-05 Grant Robert B Immersion photolithography system
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1801850B1 (en) 2004-09-17 2014-11-26 Nikon Corporation Substrate holding apparatus, exposure apparatus and device manufacturing method
US8410031B2 (en) 2004-11-04 2013-04-02 Lanxess Elastomers B.V. Method for preparing an imidized polymer
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) * 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4641469B2 (ja) * 2005-09-06 2011-03-02 キヤノン株式会社 画像形成装置、画像形成装置の制御方法、プログラム
WO2007083592A1 (ja) 2006-01-17 2007-07-26 Nikon Corporation 基板保持装置及び露光装置、並びにデバイス製造方法
US8027019B2 (en) * 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007266504A (ja) * 2006-03-29 2007-10-11 Canon Inc 露光装置
US8253922B2 (en) * 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US20100282170A1 (en) 2007-12-06 2010-11-11 Tsuyoshi Nishizawa Vapor phase growth susceptor and vapor phase growth apparatus
US20120196242A1 (en) 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
US10242890B2 (en) 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
CN105917459A (zh) 2014-02-07 2016-08-31 应用材料公司 用于dsa上弯曲晶片的夹持能力

Similar Documents

Publication Publication Date Title
JP2006313910A5 (enExample)
JP2012000983A5 (enExample)
EP1854909A3 (en) Coating structure and method for forming the same
ATE529732T1 (de) Dünnfilmvorrichtung und -verfahren
JP2014207480A5 (enExample)
JP2016053721A5 (enExample)
EP3017949A3 (en) Intermediate transfer member and image forming method
JP2011508686A5 (enExample)
JP2010177693A5 (enExample)
ATE448033T1 (de) Verfahren zur herstellung von wabenstrukturkörpern
EP2813892A3 (en) Photoresist underlayer film-forming composition and pattern forming process
TW200951642A (en) Immersion lithographic apparatus, drying device, immersion metrology apparatus and device manufacturing method
TW200739278A (en) Exposure apparatus
MY140300A (en) Enhanced wafer cleaning method
WO2009019987A1 (ja) 基板処理方法、基板処理装置、プログラム、記録媒体および置換剤
EP2196857A3 (en) Lithographic apparatus and device manufacturing method
SG152216A1 (en) Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus
TW200745777A (en) Lithographic apparatus and device manufacturing method
WO2009039121A3 (en) Image creating apparatus and methods of use
WO2011122354A3 (en) Exposure apparatus, exchange method of object, exposure method, and device manufacturing method
TW200801844A (en) Immersion exposure apparatus
WO2011068960A3 (en) Block copolymer-assisted nanolithography
JP2018509289A5 (enExample)
TW201129876A (en) A shutter member, a lithographic apparatus and device manufacturing method
EP2778786A3 (en) A flow lithography technique to form microstructures using optical arrays