JP3917211B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3917211B2
JP3917211B2 JP09224096A JP9224096A JP3917211B2 JP 3917211 B2 JP3917211 B2 JP 3917211B2 JP 09224096 A JP09224096 A JP 09224096A JP 9224096 A JP9224096 A JP 9224096A JP 3917211 B2 JP3917211 B2 JP 3917211B2
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JP
Japan
Prior art keywords
region
semiconductor substrate
main surface
conductivity type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP09224096A
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English (en)
Japanese (ja)
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JPH09283716A (ja
Inventor
知秀 寺島
和宏 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP09224096A priority Critical patent/JP3917211B2/ja
Priority to US08/739,713 priority patent/US5894156A/en
Priority to KR1019960052598A priority patent/KR100210213B1/ko
Priority to EP96120054A priority patent/EP0802568B1/fr
Priority to DE69620149T priority patent/DE69620149T2/de
Publication of JPH09283716A publication Critical patent/JPH09283716A/ja
Application granted granted Critical
Publication of JP3917211B2 publication Critical patent/JP3917211B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
JP09224096A 1996-04-15 1996-04-15 半導体装置 Expired - Lifetime JP3917211B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP09224096A JP3917211B2 (ja) 1996-04-15 1996-04-15 半導体装置
US08/739,713 US5894156A (en) 1996-04-15 1996-10-29 Semiconductor device having a high breakdown voltage isolation region
KR1019960052598A KR100210213B1 (ko) 1996-04-15 1996-11-07 반도체 장치
EP96120054A EP0802568B1 (fr) 1996-04-15 1996-12-13 Dispositif semi-conducteur
DE69620149T DE69620149T2 (de) 1996-04-15 1996-12-13 Halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09224096A JP3917211B2 (ja) 1996-04-15 1996-04-15 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006231044A Division JP4574601B2 (ja) 2006-08-28 2006-08-28 半導体装置

Publications (2)

Publication Number Publication Date
JPH09283716A JPH09283716A (ja) 1997-10-31
JP3917211B2 true JP3917211B2 (ja) 2007-05-23

Family

ID=14048919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09224096A Expired - Lifetime JP3917211B2 (ja) 1996-04-15 1996-04-15 半導体装置

Country Status (5)

Country Link
US (1) US5894156A (fr)
EP (1) EP0802568B1 (fr)
JP (1) JP3917211B2 (fr)
KR (1) KR100210213B1 (fr)
DE (1) DE69620149T2 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102349156A (zh) * 2009-09-29 2012-02-08 富士电机株式会社 高电压半导体器件和驱动电路
WO2013073539A1 (fr) 2011-11-14 2013-05-23 富士電機株式会社 Dispositif semi-conducteur à forte résistance à la tension
US8546889B2 (en) 2010-06-04 2013-10-01 Fuji Electric Co., Ltd. Semiconductor device and driving circuit
US8860172B2 (en) 2011-09-16 2014-10-14 Fuji Electric Co., Ltd. High voltage semiconductor device
US9412732B2 (en) 2013-10-07 2016-08-09 Fuji Electric Co., Ltd. Semiconductor device
US9793886B2 (en) 2013-09-02 2017-10-17 Fuji Electric Co., Ltd. Semiconductor device for high-voltage circuit
US10135445B2 (en) 2014-07-02 2018-11-20 Fuji Electric Co., Ltd. Semiconductor integrated circuit device
DE112016007213T5 (de) 2016-09-13 2019-06-06 Mitsubishi Electric Corporation Halbleitervorrichtung
US10658504B2 (en) 2017-11-17 2020-05-19 Fuji Electric Co., Ltd. Semiconductor integrated circuit device
DE102020126963A1 (de) 2020-01-17 2021-07-22 Mitsubishi Electric Corporation Halbleitervorrichtung
US11824085B2 (en) 2019-12-25 2023-11-21 Mitsubishi Electric Corporation Semiconductor device comprising a MOSFET having a RESURF region and higher peak impurity concentration diffusion region in the RESURF region

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US7370114B1 (en) * 1998-09-11 2008-05-06 Lv Partners, L.P. Software downloading using a television broadcast channel
KR100534601B1 (ko) * 1999-08-14 2005-12-07 한국전자통신연구원 제조 공정과 특성 제어가 용이한 전력 집적회로 구조
KR100357198B1 (ko) * 2000-12-29 2002-10-19 주식회사 하이닉스반도체 반도체 고전압 소자의 격리영역 및 그 형성방법
US6448625B1 (en) * 2001-03-16 2002-09-10 Semiconductor Components Industries Llc High voltage metal oxide device with enhanced well region
JP4326835B2 (ja) * 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
JP4654574B2 (ja) 2003-10-20 2011-03-23 トヨタ自動車株式会社 半導体装置
JP4593126B2 (ja) * 2004-02-18 2010-12-08 三菱電機株式会社 半導体装置
JP4667756B2 (ja) * 2004-03-03 2011-04-13 三菱電機株式会社 半導体装置
JP4620437B2 (ja) * 2004-12-02 2011-01-26 三菱電機株式会社 半導体装置
US20060220168A1 (en) * 2005-03-08 2006-10-05 Monolithic Power Systems, Inc. Shielding high voltage integrated circuits
JP4863665B2 (ja) * 2005-07-15 2012-01-25 三菱電機株式会社 半導体装置およびその製造方法
JP4832841B2 (ja) * 2005-09-22 2011-12-07 三菱電機株式会社 半導体装置
JP5092174B2 (ja) * 2007-04-12 2012-12-05 三菱電機株式会社 半導体装置
JP4797203B2 (ja) * 2008-12-17 2011-10-19 三菱電機株式会社 半導体装置
US8618627B2 (en) * 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5496826B2 (ja) * 2010-08-25 2014-05-21 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP5191514B2 (ja) * 2010-09-08 2013-05-08 三菱電機株式会社 半導体装置
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6132539B2 (ja) * 2012-12-13 2017-05-24 ルネサスエレクトロニクス株式会社 半導体装置
JP6134219B2 (ja) * 2013-07-08 2017-05-24 ルネサスエレクトロニクス株式会社 半導体装置
JP2017045966A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置
WO2017086069A1 (fr) 2015-11-19 2017-05-26 富士電機株式会社 Dispositif à semi-conducteur
JP6690336B2 (ja) 2016-03-18 2020-04-28 富士電機株式会社 半導体装置
KR102227666B1 (ko) 2017-05-31 2021-03-12 주식회사 키 파운드리 고전압 반도체 소자
JP6414861B2 (ja) * 2017-09-12 2018-10-31 ルネサスエレクトロニクス株式会社 半導体装置
US11562995B2 (en) 2019-04-11 2023-01-24 Fuji Electric Co., Ltd. Semiconductor integrated circuit
JP2023108349A (ja) 2022-01-25 2023-08-04 サンケン電気株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131801A (fr) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconducteur
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
US4868921A (en) * 1986-09-05 1989-09-19 General Electric Company High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
JPS63164362A (ja) * 1986-12-26 1988-07-07 Toshiba Corp 半導体装置
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
US5548147A (en) * 1994-04-08 1996-08-20 Texas Instruments Incorporated Extended drain resurf lateral DMOS devices

Cited By (18)

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Publication number Priority date Publication date Assignee Title
CN102349156B (zh) * 2009-09-29 2015-03-18 富士电机株式会社 高电压半导体器件和驱动电路
CN102349156A (zh) * 2009-09-29 2012-02-08 富士电机株式会社 高电压半导体器件和驱动电路
US8546889B2 (en) 2010-06-04 2013-10-01 Fuji Electric Co., Ltd. Semiconductor device and driving circuit
US8860172B2 (en) 2011-09-16 2014-10-14 Fuji Electric Co., Ltd. High voltage semiconductor device
WO2013073539A1 (fr) 2011-11-14 2013-05-23 富士電機株式会社 Dispositif semi-conducteur à forte résistance à la tension
US10396775B2 (en) 2013-09-02 2019-08-27 Fuji Electric Co., Ltd. Semiconductor device for high-voltage circuit
US9793886B2 (en) 2013-09-02 2017-10-17 Fuji Electric Co., Ltd. Semiconductor device for high-voltage circuit
US9412732B2 (en) 2013-10-07 2016-08-09 Fuji Electric Co., Ltd. Semiconductor device
US10135445B2 (en) 2014-07-02 2018-11-20 Fuji Electric Co., Ltd. Semiconductor integrated circuit device
DE112016007213T5 (de) 2016-09-13 2019-06-06 Mitsubishi Electric Corporation Halbleitervorrichtung
US11063116B2 (en) 2016-09-13 2021-07-13 Mitsubishi Electric Corporation Semiconductor device
DE112016007213B4 (de) 2016-09-13 2022-05-25 Mitsubishi Electric Corporation Halbleitervorrichtung
US10658504B2 (en) 2017-11-17 2020-05-19 Fuji Electric Co., Ltd. Semiconductor integrated circuit device
US11824085B2 (en) 2019-12-25 2023-11-21 Mitsubishi Electric Corporation Semiconductor device comprising a MOSFET having a RESURF region and higher peak impurity concentration diffusion region in the RESURF region
DE102020126963A1 (de) 2020-01-17 2021-07-22 Mitsubishi Electric Corporation Halbleitervorrichtung
JP2021114527A (ja) * 2020-01-17 2021-08-05 三菱電機株式会社 半導体装置
US11552166B2 (en) 2020-01-17 2023-01-10 Mitsubishi Electric Corporation Semiconductor device comprising resurf isolation structure surrounding an outer periphery of a high side circuit region and isolating the high side circuit region from a low side circuit region
JP7210490B2 (ja) 2020-01-17 2023-01-23 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
EP0802568A1 (fr) 1997-10-22
DE69620149T2 (de) 2002-10-02
EP0802568B1 (fr) 2002-03-27
DE69620149D1 (de) 2002-05-02
US5894156A (en) 1999-04-13
KR100210213B1 (ko) 1999-07-15
JPH09283716A (ja) 1997-10-31
KR970072395A (ko) 1997-11-07

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