JP3868777B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3868777B2
JP3868777B2 JP2001274504A JP2001274504A JP3868777B2 JP 3868777 B2 JP3868777 B2 JP 3868777B2 JP 2001274504 A JP2001274504 A JP 2001274504A JP 2001274504 A JP2001274504 A JP 2001274504A JP 3868777 B2 JP3868777 B2 JP 3868777B2
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JP
Japan
Prior art keywords
electrode
semiconductor device
semiconductor chip
resin
lead frame
Prior art date
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Expired - Fee Related
Application number
JP2001274504A
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English (en)
Japanese (ja)
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JP2003086737A (ja
JP2003086737A5 (enExample
Inventor
浩治 森口
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001274504A priority Critical patent/JP3868777B2/ja
Priority to CNB021416885A priority patent/CN1228837C/zh
Priority to US10/237,689 priority patent/US6784537B2/en
Publication of JP2003086737A publication Critical patent/JP2003086737A/ja
Publication of JP2003086737A5 publication Critical patent/JP2003086737A5/ja
Application granted granted Critical
Publication of JP3868777B2 publication Critical patent/JP3868777B2/ja
Anticipated expiration legal-status Critical
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2001274504A 2001-09-11 2001-09-11 半導体装置 Expired - Fee Related JP3868777B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001274504A JP3868777B2 (ja) 2001-09-11 2001-09-11 半導体装置
CNB021416885A CN1228837C (zh) 2001-09-11 2002-09-10 半导体装置
US10/237,689 US6784537B2 (en) 2001-09-11 2002-09-10 Semiconductor device of surface-mounting type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001274504A JP3868777B2 (ja) 2001-09-11 2001-09-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2003086737A JP2003086737A (ja) 2003-03-20
JP2003086737A5 JP2003086737A5 (enExample) 2005-10-27
JP3868777B2 true JP3868777B2 (ja) 2007-01-17

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JP2001274504A Expired - Fee Related JP3868777B2 (ja) 2001-09-11 2001-09-11 半導体装置

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US (1) US6784537B2 (enExample)
JP (1) JP3868777B2 (enExample)
CN (1) CN1228837C (enExample)

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US7323361B2 (en) * 2002-03-29 2008-01-29 Fairchild Semiconductor Corporation Packaging system for semiconductor devices
US6794740B1 (en) * 2003-03-13 2004-09-21 Amkor Technology, Inc. Leadframe package for semiconductor devices
JP4294405B2 (ja) * 2003-07-31 2009-07-15 株式会社ルネサステクノロジ 半導体装置
US7315081B2 (en) * 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
JP4312616B2 (ja) * 2004-01-26 2009-08-12 Ｎｅｃエレクトロニクス株式会社 半導体装置
EP1603157B1 (en) * 2004-05-31 2008-01-09 STMicroelectronics S.r.l. Vertical conduction power electronic device package and corresponding assembling method
JP4468115B2 (ja) 2004-08-30 2010-05-26 株式会社ルネサステクノロジ 半導体装置
JP4153932B2 (ja) 2004-09-24 2008-09-24 株式会社東芝 半導体装置および半導体装置の製造方法
DE112005002899B4 (de) * 2004-11-23 2016-11-17 Siliconix Inc. Halbleiterbauelement mit einem Chip, der zwischen einer becherförmigen Leiterplatte und einer Leiterplatte mit Mesas und Tälern angeordnet ist, und Verfahren zur dessen Herstellung
US20060145319A1 (en) * 2004-12-31 2006-07-06 Ming Sun Flip chip contact (FCC) power package
US20060108635A1 (en) * 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
JP4547279B2 (ja) 2005-02-08 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102005011159B4 (de) * 2005-03-09 2013-05-16 Infineon Technologies Ag Halbleiterbauteil mit oberflächenmontierbaren Außenkontaktflächen und Verfahren zur Herstellung desselben
US7230333B2 (en) * 2005-04-21 2007-06-12 International Rectifier Corporation Semiconductor package
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