CN1228837C - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1228837C
CN1228837C CNB021416885A CN02141688A CN1228837C CN 1228837 C CN1228837 C CN 1228837C CN B021416885 A CNB021416885 A CN B021416885A CN 02141688 A CN02141688 A CN 02141688A CN 1228837 C CN1228837 C CN 1228837C
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China
Prior art keywords
semiconductor device
electrode
resin
semiconductor chip
semiconductor
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Expired - Fee Related
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CNB021416885A
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English (en)
Chinese (zh)
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CN1405881A (zh
Inventor
森口浩治
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Toshiba Corp
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Toshiba Corp
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Publication of CN1405881A publication Critical patent/CN1405881A/zh
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Publication of CN1228837C publication Critical patent/CN1228837C/zh
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CNB021416885A 2001-09-11 2002-09-10 半导体装置 Expired - Fee Related CN1228837C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP274504/2001 2001-09-11
JP2001274504A JP3868777B2 (ja) 2001-09-11 2001-09-11 半導体装置

Publications (2)

Publication Number Publication Date
CN1405881A CN1405881A (zh) 2003-03-26
CN1228837C true CN1228837C (zh) 2005-11-23

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US (1) US6784537B2 (enExample)
JP (1) JP3868777B2 (enExample)
CN (1) CN1228837C (enExample)

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JP4294405B2 (ja) * 2003-07-31 2009-07-15 株式会社ルネサステクノロジ 半導体装置
US7315081B2 (en) * 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
JP4312616B2 (ja) * 2004-01-26 2009-08-12 Ｎｅｃエレクトロニクス株式会社 半導体装置
EP1603157B1 (en) * 2004-05-31 2008-01-09 STMicroelectronics S.r.l. Vertical conduction power electronic device package and corresponding assembling method
JP4468115B2 (ja) 2004-08-30 2010-05-26 株式会社ルネサステクノロジ 半導体装置
JP4153932B2 (ja) 2004-09-24 2008-09-24 株式会社東芝 半導体装置および半導体装置の製造方法
DE112005002899B4 (de) * 2004-11-23 2016-11-17 Siliconix Inc. Halbleiterbauelement mit einem Chip, der zwischen einer becherförmigen Leiterplatte und einer Leiterplatte mit Mesas und Tälern angeordnet ist, und Verfahren zur dessen Herstellung
US20060145319A1 (en) * 2004-12-31 2006-07-06 Ming Sun Flip chip contact (FCC) power package
US20060108635A1 (en) * 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
JP4547279B2 (ja) 2005-02-08 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102005011159B4 (de) * 2005-03-09 2013-05-16 Infineon Technologies Ag Halbleiterbauteil mit oberflächenmontierbaren Außenkontaktflächen und Verfahren zur Herstellung desselben
US7230333B2 (en) * 2005-04-21 2007-06-12 International Rectifier Corporation Semiconductor package
US7402462B2 (en) * 2005-07-12 2008-07-22 Fairchild Semiconductor Corporation Folded frame carrier for MOSFET BGA
JP4860994B2 (ja) * 2005-12-06 2012-01-25 ルネサスエレクトロニクス株式会社 半導体装置
US20070215997A1 (en) * 2006-03-17 2007-09-20 Martin Standing Chip-scale package
US7772036B2 (en) * 2006-04-06 2010-08-10 Freescale Semiconductor, Inc. Lead frame based, over-molded semiconductor package with integrated through hole technology (THT) heat spreader pin(s) and associated method of manufacturing
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
US8124460B2 (en) * 2006-07-17 2012-02-28 Stats Chippac Ltd. Integrated circuit package system employing an exposed thermally conductive coating
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