JP3812421B2 - 横型接合型電界効果トランジスタ - Google Patents

横型接合型電界効果トランジスタ Download PDF

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Publication number
JP3812421B2
JP3812421B2 JP2001348882A JP2001348882A JP3812421B2 JP 3812421 B2 JP3812421 B2 JP 3812421B2 JP 2001348882 A JP2001348882 A JP 2001348882A JP 2001348882 A JP2001348882 A JP 2001348882A JP 3812421 B2 JP3812421 B2 JP 3812421B2
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JP
Japan
Prior art keywords
semiconductor layer
layer
impurity
region
conductivity type
Prior art date
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Expired - Fee Related
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JP2001348882A
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English (en)
Japanese (ja)
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JP2003068762A5 (enExample
JP2003068762A (ja
Inventor
真 原田
研一 弘津
弘之 松波
恒暢 木本
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Filing date
Publication date
Priority to JP2001348882A priority Critical patent/JP3812421B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to CA2420821A priority patent/CA2420821C/en
Priority to PCT/JP2002/005816 priority patent/WO2002103807A1/ja
Priority to US10/362,345 priority patent/US7023033B2/en
Priority to KR10-2003-7002084A priority patent/KR100467421B1/ko
Priority to EP02736054.4A priority patent/EP1396890B1/en
Priority to CNB028021290A priority patent/CN1238904C/zh
Priority to TW091113045A priority patent/TW594987B/zh
Publication of JP2003068762A publication Critical patent/JP2003068762A/ja
Publication of JP2003068762A5 publication Critical patent/JP2003068762A5/ja
Priority to US11/337,143 priority patent/US7528426B2/en
Application granted granted Critical
Publication of JP3812421B2 publication Critical patent/JP3812421B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001348882A 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ Expired - Fee Related JP3812421B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2001348882A JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ
PCT/JP2002/005816 WO2002103807A1 (en) 2001-06-14 2002-06-11 Lateral junction type field effect transistor
US10/362,345 US7023033B2 (en) 2001-06-14 2002-06-11 Lateral junction field-effect transistor
KR10-2003-7002084A KR100467421B1 (ko) 2001-06-14 2002-06-11 횡형접합형 전계 효과 트랜지스터
EP02736054.4A EP1396890B1 (en) 2001-06-14 2002-06-11 Lateral junction type field effect transistor
CNB028021290A CN1238904C (zh) 2001-06-14 2002-06-11 横向结型场效应晶体管
CA2420821A CA2420821C (en) 2001-06-14 2002-06-11 Lateral junction type field effect transistor
TW091113045A TW594987B (en) 2001-06-14 2002-06-14 Lateral junction filed-effect transistors
US11/337,143 US7528426B2 (en) 2001-06-14 2006-01-20 Lateral junction field-effect transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-180173 2001-06-14
JP2001180173 2001-06-14
JP2001348882A JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2003068762A JP2003068762A (ja) 2003-03-07
JP2003068762A5 JP2003068762A5 (enExample) 2004-07-15
JP3812421B2 true JP3812421B2 (ja) 2006-08-23

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Family Applications (1)

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JP2001348882A Expired - Fee Related JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ

Country Status (8)

Country Link
US (2) US7023033B2 (enExample)
EP (1) EP1396890B1 (enExample)
JP (1) JP3812421B2 (enExample)
KR (1) KR100467421B1 (enExample)
CN (1) CN1238904C (enExample)
CA (1) CA2420821C (enExample)
TW (1) TW594987B (enExample)
WO (1) WO2002103807A1 (enExample)

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JP4122880B2 (ja) * 2002-07-24 2008-07-23 住友電気工業株式会社 縦型接合型電界効果トランジスタ
JP4610865B2 (ja) * 2003-05-30 2011-01-12 パナソニック株式会社 半導体装置及びその製造方法
JP4730097B2 (ja) * 2003-06-13 2011-07-20 住友電気工業株式会社 電界効果トランジスタ
US7180105B2 (en) * 2004-02-09 2007-02-20 International Rectifier Corporation Normally off JFET
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US7019344B2 (en) * 2004-06-03 2006-03-28 Ranbir Singh Lateral drift vertical metal-insulator semiconductor field effect transistor
US7205629B2 (en) * 2004-06-03 2007-04-17 Widebandgap Llc Lateral super junction field effect transistor
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor
WO2006025772A1 (en) * 2004-09-01 2006-03-09 Cree Sweden Ab Lateral field effect transistor and its fabrication comprisng a spacer layer above and below the channel layer
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JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP5018349B2 (ja) * 2007-08-30 2012-09-05 住友電気工業株式会社 半導体装置
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JP5564890B2 (ja) * 2008-12-16 2014-08-06 住友電気工業株式会社 接合型電界効果トランジスタおよびその製造方法
JP4683141B2 (ja) * 2009-05-01 2011-05-11 住友電気工業株式会社 横型接合型電界効果トランジスタ
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JP5397289B2 (ja) 2010-03-29 2014-01-22 住友電気工業株式会社 電界効果トランジスタ
JP5611653B2 (ja) * 2010-05-06 2014-10-22 株式会社東芝 窒化物半導体素子
KR101109229B1 (ko) * 2010-05-14 2012-01-30 주식회사 케이이씨 이중 접합 게이트를 갖는 반도체 디바이스 및 그 제조 방법
JP2012109348A (ja) 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
DE102011009487B4 (de) * 2011-01-26 2017-10-19 Austriamicrosystems Ag Asymmetrischer Hochvolt-JFET und Herstellungsverfahren
US9343588B2 (en) * 2011-02-22 2016-05-17 Infineon Technologies Austria Ag Normally-off semiconductor switches and normally-off JFETs
CN103178093B (zh) * 2011-12-26 2015-10-14 上海华虹宏力半导体制造有限公司 高压结型场效应晶体管的结构及制备方法
CN103367414B (zh) * 2012-04-09 2015-10-14 上海华虹宏力半导体制造有限公司 纵向夹断的面结型场效应晶体管结构及制造方法
CN102916049B (zh) * 2012-10-30 2015-04-22 成都芯源系统有限公司 包括结型场效应晶体管的半导体器件及其制造方法
KR101866673B1 (ko) * 2013-12-25 2018-06-11 캐논 가부시끼가이샤 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법
JP6230456B2 (ja) 2014-03-19 2017-11-15 株式会社東芝 半導体装置
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JP6718612B2 (ja) * 2016-05-27 2020-07-08 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
US10079294B2 (en) * 2016-06-28 2018-09-18 Texas Instruments Incorporated Integrated JFET structure with implanted backgate
JP7074320B2 (ja) * 2017-11-16 2022-05-24 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
TWI686872B (zh) * 2018-05-23 2020-03-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
CN110571271B (zh) * 2018-06-05 2023-08-18 世界先进积体电路股份有限公司 半导体装置及其制造方法
JP7128136B2 (ja) 2019-03-08 2022-08-30 株式会社東芝 接合型電界効果トランジスタ
US11869983B2 (en) * 2020-03-12 2024-01-09 International Business Machines Corporation Low voltage/power junction FET with all-around junction gate
WO2023079316A1 (en) * 2021-11-08 2023-05-11 Search For The Next Ltd A transistor device and a method of operating thereof
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor
CN117637854B (zh) 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直型电容耦合栅控结型场效应晶体管及其制备方法
CN117613098B (zh) 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直沟槽型电容耦合栅控结型场效应晶体管及其制备方法

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Also Published As

Publication number Publication date
CA2420821C (en) 2011-08-09
US7528426B2 (en) 2009-05-05
EP1396890A1 (en) 2004-03-10
CN1496587A (zh) 2004-05-12
US20060118813A1 (en) 2006-06-08
WO2002103807A1 (en) 2002-12-27
US7023033B2 (en) 2006-04-04
TW594987B (en) 2004-06-21
EP1396890A4 (en) 2007-10-10
CA2420821A1 (en) 2002-12-27
KR100467421B1 (ko) 2005-01-27
CN1238904C (zh) 2006-01-25
US20030168704A1 (en) 2003-09-11
JP2003068762A (ja) 2003-03-07
EP1396890B1 (en) 2013-08-21
KR20030027025A (ko) 2003-04-03

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