CN1238904C - 横向结型场效应晶体管 - Google Patents

横向结型场效应晶体管 Download PDF

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Publication number
CN1238904C
CN1238904C CNB028021290A CN02802129A CN1238904C CN 1238904 C CN1238904 C CN 1238904C CN B028021290 A CNB028021290 A CN B028021290A CN 02802129 A CN02802129 A CN 02802129A CN 1238904 C CN1238904 C CN 1238904C
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China
Prior art keywords
semiconductor layer
layer
region
impurity concentration
impurity
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Expired - Fee Related
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CNB028021290A
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English (en)
Chinese (zh)
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CN1496587A (zh
Inventor
原田真
弘津研一
松波弘之
木本恒畅
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication of CN1496587A publication Critical patent/CN1496587A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB028021290A 2001-06-14 2002-06-11 横向结型场效应晶体管 Expired - Fee Related CN1238904C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP180173/01 2001-06-14
JP2001180173 2001-06-14
JP180173/2001 2001-06-14
JP348882/2001 2001-11-14
JP2001348882A JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ
JP348882/01 2001-11-14

Publications (2)

Publication Number Publication Date
CN1496587A CN1496587A (zh) 2004-05-12
CN1238904C true CN1238904C (zh) 2006-01-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028021290A Expired - Fee Related CN1238904C (zh) 2001-06-14 2002-06-11 横向结型场效应晶体管

Country Status (8)

Country Link
US (2) US7023033B2 (enExample)
EP (1) EP1396890B1 (enExample)
JP (1) JP3812421B2 (enExample)
KR (1) KR100467421B1 (enExample)
CN (1) CN1238904C (enExample)
CA (1) CA2420821C (enExample)
TW (1) TW594987B (enExample)
WO (1) WO2002103807A1 (enExample)

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EP4593550A1 (en) 2024-01-24 2025-07-30 Suzhou Watech Electronics Co., Ltd. Vertical coupling capacitance gate-controlled junction field effect transistor and manufacturing method thereof
EP4593552A1 (en) 2024-01-24 2025-07-30 Suzhou Watech Electronics Co., Ltd. Vertical trench-gate junction-gate field-effect transistor wit an integral coupling capacitance gated contact and manufacturing method thereof

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JP4122880B2 (ja) * 2002-07-24 2008-07-23 住友電気工業株式会社 縦型接合型電界効果トランジスタ
JP4610865B2 (ja) * 2003-05-30 2011-01-12 パナソニック株式会社 半導体装置及びその製造方法
JP4730097B2 (ja) * 2003-06-13 2011-07-20 住友電気工業株式会社 電界効果トランジスタ
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US7019344B2 (en) * 2004-06-03 2006-03-28 Ranbir Singh Lateral drift vertical metal-insulator semiconductor field effect transistor
US7205629B2 (en) * 2004-06-03 2007-04-17 Widebandgap Llc Lateral super junction field effect transistor
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor
WO2006025772A1 (en) * 2004-09-01 2006-03-09 Cree Sweden Ab Lateral field effect transistor and its fabrication comprisng a spacer layer above and below the channel layer
US8004606B2 (en) 2005-09-08 2011-08-23 Silicon Image, Inc. Original scan line detection
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JP2008053534A (ja) * 2006-08-25 2008-03-06 Sanyo Electric Co Ltd 接合型ｆｅｔおよびその製造方法
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP5018349B2 (ja) * 2007-08-30 2012-09-05 住友電気工業株式会社 半導体装置
US7560325B1 (en) * 2008-04-14 2009-07-14 Semisouth Laboratories, Inc. Methods of making lateral junction field effect transistors using selective epitaxial growth
JP5077185B2 (ja) * 2008-10-16 2012-11-21 住友電気工業株式会社 横型接合型電界効果トランジスタおよびその製造方法
JP5564890B2 (ja) * 2008-12-16 2014-08-06 住友電気工業株式会社 接合型電界効果トランジスタおよびその製造方法
JP4683141B2 (ja) * 2009-05-01 2011-05-11 住友電気工業株式会社 横型接合型電界効果トランジスタ
US8390039B2 (en) * 2009-11-02 2013-03-05 Analog Devices, Inc. Junction field effect transistor
JP5397289B2 (ja) 2010-03-29 2014-01-22 住友電気工業株式会社 電界効果トランジスタ
JP5611653B2 (ja) * 2010-05-06 2014-10-22 株式会社東芝 窒化物半導体素子
KR101109229B1 (ko) * 2010-05-14 2012-01-30 주식회사 케이이씨 이중 접합 게이트를 갖는 반도체 디바이스 및 그 제조 방법
JP2012109348A (ja) 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
DE102011009487B4 (de) * 2011-01-26 2017-10-19 Austriamicrosystems Ag Asymmetrischer Hochvolt-JFET und Herstellungsverfahren
US9343588B2 (en) * 2011-02-22 2016-05-17 Infineon Technologies Austria Ag Normally-off semiconductor switches and normally-off JFETs
CN103178093B (zh) * 2011-12-26 2015-10-14 上海华虹宏力半导体制造有限公司 高压结型场效应晶体管的结构及制备方法
CN103367414B (zh) * 2012-04-09 2015-10-14 上海华虹宏力半导体制造有限公司 纵向夹断的面结型场效应晶体管结构及制造方法
CN102916049B (zh) * 2012-10-30 2015-04-22 成都芯源系统有限公司 包括结型场效应晶体管的半导体器件及其制造方法
KR101866673B1 (ko) * 2013-12-25 2018-06-11 캐논 가부시끼가이샤 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법
JP6230456B2 (ja) 2014-03-19 2017-11-15 株式会社東芝 半導体装置
US9299857B2 (en) * 2014-06-19 2016-03-29 Macronix International Co., Ltd. Semiconductor device
CN104617155A (zh) * 2015-01-26 2015-05-13 上海华虹宏力半导体制造有限公司 一种改善esd防护能力的jfet
JP6718612B2 (ja) * 2016-05-27 2020-07-08 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
US10079294B2 (en) * 2016-06-28 2018-09-18 Texas Instruments Incorporated Integrated JFET structure with implanted backgate
JP7074320B2 (ja) * 2017-11-16 2022-05-24 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
TWI686872B (zh) * 2018-05-23 2020-03-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
CN110571271B (zh) * 2018-06-05 2023-08-18 世界先进积体电路股份有限公司 半导体装置及其制造方法
JP7128136B2 (ja) 2019-03-08 2022-08-30 株式会社東芝 接合型電界効果トランジスタ
US11869983B2 (en) * 2020-03-12 2024-01-09 International Business Machines Corporation Low voltage/power junction FET with all-around junction gate
WO2023079316A1 (en) * 2021-11-08 2023-05-11 Search For The Next Ltd A transistor device and a method of operating thereof
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4593550A1 (en) 2024-01-24 2025-07-30 Suzhou Watech Electronics Co., Ltd. Vertical coupling capacitance gate-controlled junction field effect transistor and manufacturing method thereof
EP4593552A1 (en) 2024-01-24 2025-07-30 Suzhou Watech Electronics Co., Ltd. Vertical trench-gate junction-gate field-effect transistor wit an integral coupling capacitance gated contact and manufacturing method thereof

Also Published As

Publication number Publication date
CA2420821C (en) 2011-08-09
US7528426B2 (en) 2009-05-05
EP1396890A1 (en) 2004-03-10
CN1496587A (zh) 2004-05-12
US20060118813A1 (en) 2006-06-08
WO2002103807A1 (en) 2002-12-27
US7023033B2 (en) 2006-04-04
JP3812421B2 (ja) 2006-08-23
TW594987B (en) 2004-06-21
EP1396890A4 (en) 2007-10-10
CA2420821A1 (en) 2002-12-27
KR100467421B1 (ko) 2005-01-27
US20030168704A1 (en) 2003-09-11
JP2003068762A (ja) 2003-03-07
EP1396890B1 (en) 2013-08-21
KR20030027025A (ko) 2003-04-03

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