CA2420821C - Lateral junction type field effect transistor - Google Patents
Lateral junction type field effect transistor Download PDFInfo
- Publication number
- CA2420821C CA2420821C CA2420821A CA2420821A CA2420821C CA 2420821 C CA2420821 C CA 2420821C CA 2420821 A CA2420821 A CA 2420821A CA 2420821 A CA2420821 A CA 2420821A CA 2420821 C CA2420821 C CA 2420821C
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor layer
- layer
- type
- effect transistor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/343—Gate regions of field-effect devices having PN junction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-180173 | 2001-06-14 | ||
| JP2001180173 | 2001-06-14 | ||
| JP2001348882A JP3812421B2 (ja) | 2001-06-14 | 2001-11-14 | 横型接合型電界効果トランジスタ |
| JP2001-348882 | 2001-11-14 | ||
| PCT/JP2002/005816 WO2002103807A1 (en) | 2001-06-14 | 2002-06-11 | Lateral junction type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2420821A1 CA2420821A1 (en) | 2002-12-27 |
| CA2420821C true CA2420821C (en) | 2011-08-09 |
Family
ID=26616896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2420821A Expired - Fee Related CA2420821C (en) | 2001-06-14 | 2002-06-11 | Lateral junction type field effect transistor |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7023033B2 (enExample) |
| EP (1) | EP1396890B1 (enExample) |
| JP (1) | JP3812421B2 (enExample) |
| KR (1) | KR100467421B1 (enExample) |
| CN (1) | CN1238904C (enExample) |
| CA (1) | CA2420821C (enExample) |
| TW (1) | TW594987B (enExample) |
| WO (1) | WO2002103807A1 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003078032A (ja) * | 2001-09-05 | 2003-03-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP3925253B2 (ja) * | 2002-03-15 | 2007-06-06 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタおよびその製造方法 |
| JP4122880B2 (ja) * | 2002-07-24 | 2008-07-23 | 住友電気工業株式会社 | 縦型接合型電界効果トランジスタ |
| JP4610865B2 (ja) * | 2003-05-30 | 2011-01-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP4730097B2 (ja) * | 2003-06-13 | 2011-07-20 | 住友電気工業株式会社 | 電界効果トランジスタ |
| US7180105B2 (en) * | 2004-02-09 | 2007-02-20 | International Rectifier Corporation | Normally off JFET |
| DE102004018153B9 (de) * | 2004-04-08 | 2012-08-23 | Austriamicrosystems Ag | Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung |
| US7105875B2 (en) * | 2004-06-03 | 2006-09-12 | Wide Bandgap, Llc | Lateral power diodes |
| US7019344B2 (en) * | 2004-06-03 | 2006-03-28 | Ranbir Singh | Lateral drift vertical metal-insulator semiconductor field effect transistor |
| US7205629B2 (en) * | 2004-06-03 | 2007-04-17 | Widebandgap Llc | Lateral super junction field effect transistor |
| US7026669B2 (en) * | 2004-06-03 | 2006-04-11 | Ranbir Singh | Lateral channel transistor |
| WO2006025772A1 (en) * | 2004-09-01 | 2006-03-09 | Cree Sweden Ab | Lateral field effect transistor and its fabrication comprisng a spacer layer above and below the channel layer |
| US8004606B2 (en) | 2005-09-08 | 2011-08-23 | Silicon Image, Inc. | Original scan line detection |
| US7449762B1 (en) | 2006-04-07 | 2008-11-11 | Wide Bandgap Llc | Lateral epitaxial GaN metal insulator semiconductor field effect transistor |
| JP2008053534A (ja) * | 2006-08-25 | 2008-03-06 | Sanyo Electric Co Ltd | 接合型ｆｅｔおよびその製造方法 |
| JP4751308B2 (ja) * | 2006-12-18 | 2011-08-17 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| JP5018349B2 (ja) * | 2007-08-30 | 2012-09-05 | 住友電気工業株式会社 | 半導体装置 |
| US7560325B1 (en) * | 2008-04-14 | 2009-07-14 | Semisouth Laboratories, Inc. | Methods of making lateral junction field effect transistors using selective epitaxial growth |
| JP5077185B2 (ja) * | 2008-10-16 | 2012-11-21 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタおよびその製造方法 |
| JP5564890B2 (ja) * | 2008-12-16 | 2014-08-06 | 住友電気工業株式会社 | 接合型電界効果トランジスタおよびその製造方法 |
| JP4683141B2 (ja) * | 2009-05-01 | 2011-05-11 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
| US8390039B2 (en) * | 2009-11-02 | 2013-03-05 | Analog Devices, Inc. | Junction field effect transistor |
| JP5397289B2 (ja) | 2010-03-29 | 2014-01-22 | 住友電気工業株式会社 | 電界効果トランジスタ |
| JP5611653B2 (ja) * | 2010-05-06 | 2014-10-22 | 株式会社東芝 | 窒化物半導体素子 |
| KR101109229B1 (ko) * | 2010-05-14 | 2012-01-30 | 주식회사 케이이씨 | 이중 접합 게이트를 갖는 반도체 디바이스 및 그 제조 방법 |
| JP2012109348A (ja) | 2010-11-16 | 2012-06-07 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
| DE102011009487B4 (de) * | 2011-01-26 | 2017-10-19 | Austriamicrosystems Ag | Asymmetrischer Hochvolt-JFET und Herstellungsverfahren |
| US9343588B2 (en) * | 2011-02-22 | 2016-05-17 | Infineon Technologies Austria Ag | Normally-off semiconductor switches and normally-off JFETs |
| CN103178093B (zh) * | 2011-12-26 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 高压结型场效应晶体管的结构及制备方法 |
| CN103367414B (zh) * | 2012-04-09 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 纵向夹断的面结型场效应晶体管结构及制造方法 |
| CN102916049B (zh) * | 2012-10-30 | 2015-04-22 | 成都芯源系统有限公司 | 包括结型场效应晶体管的半导体器件及其制造方法 |
| KR101866673B1 (ko) * | 2013-12-25 | 2018-06-11 | 캐논 가부시끼가이샤 | 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법 |
| JP6230456B2 (ja) | 2014-03-19 | 2017-11-15 | 株式会社東芝 | 半導体装置 |
| US9299857B2 (en) * | 2014-06-19 | 2016-03-29 | Macronix International Co., Ltd. | Semiconductor device |
| CN104617155A (zh) * | 2015-01-26 | 2015-05-13 | 上海华虹宏力半导体制造有限公司 | 一种改善esd防护能力的jfet |
| JP6718612B2 (ja) * | 2016-05-27 | 2020-07-08 | 国立大学法人京都大学 | ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ |
| US10079294B2 (en) * | 2016-06-28 | 2018-09-18 | Texas Instruments Incorporated | Integrated JFET structure with implanted backgate |
| JP7074320B2 (ja) * | 2017-11-16 | 2022-05-24 | 国立大学法人京都大学 | ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ |
| TWI686872B (zh) * | 2018-05-23 | 2020-03-01 | 世界先進積體電路股份有限公司 | 半導體裝置及其製造方法 |
| CN110571271B (zh) * | 2018-06-05 | 2023-08-18 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
| JP7128136B2 (ja) | 2019-03-08 | 2022-08-30 | 株式会社東芝 | 接合型電界効果トランジスタ |
| US11869983B2 (en) * | 2020-03-12 | 2024-01-09 | International Business Machines Corporation | Low voltage/power junction FET with all-around junction gate |
| WO2023079316A1 (en) * | 2021-11-08 | 2023-05-11 | Search For The Next Ltd | A transistor device and a method of operating thereof |
| US11837658B1 (en) * | 2022-06-21 | 2023-12-05 | K. Eklund Innovation | Semiconductor device comprising a lateral super junction field effect transistor |
| CN117637854B (zh) | 2024-01-24 | 2024-04-19 | 苏州华太电子技术股份有限公司 | 垂直型电容耦合栅控结型场效应晶体管及其制备方法 |
| CN117613098B (zh) | 2024-01-24 | 2024-04-19 | 苏州华太电子技术股份有限公司 | 垂直沟槽型电容耦合栅控结型场效应晶体管及其制备方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
| US3841917A (en) * | 1971-09-06 | 1974-10-15 | Philips Nv | Methods of manufacturing semiconductor devices |
| JPS5412680A (en) | 1977-06-30 | 1979-01-30 | Matsushita Electric Ind Co Ltd | Junction-type field effect transistor and its manufacture |
| US4176368A (en) | 1978-10-10 | 1979-11-27 | National Semiconductor Corporation | Junction field effect transistor for use in integrated circuits |
| JPS5649575A (en) * | 1979-09-28 | 1981-05-06 | Hitachi Ltd | Junction type field effect semiconductor |
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
| EP0197116B1 (en) * | 1984-10-05 | 1990-08-08 | Analog Devices, Inc. | Low-leakage jfet |
| US4876579A (en) * | 1989-01-26 | 1989-10-24 | Harris Corporation | Low top gate resistance JFET structure |
| US5264713A (en) | 1991-06-14 | 1993-11-23 | Cree Research, Inc. | Junction field-effect transistor formed in silicon carbide |
| US5342795A (en) * | 1992-04-30 | 1994-08-30 | Texas Instruments Incorporated | Method of fabricating power VFET gate-refill |
| JP3109274B2 (ja) | 1992-08-31 | 2000-11-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5378642A (en) | 1993-04-19 | 1995-01-03 | General Electric Company | Method of making a silicon carbide junction field effect transistor device for high temperature applications |
| JPH0730111A (ja) | 1993-07-15 | 1995-01-31 | Hitachi Ltd | 絶縁ゲート形電界効果トランジスタ |
| DE19644821C1 (de) | 1996-10-29 | 1998-02-12 | Daimler Benz Ag | Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften |
| EP0981166A3 (en) * | 1998-08-17 | 2000-04-19 | ELMOS Semiconductor AG | JFET transistor |
| ITTO980785A1 (it) | 1998-09-16 | 2000-03-16 | M A C S P A | Elemento strutturale per un autoveicolo. |
| DE19844531B4 (de) | 1998-09-29 | 2017-12-14 | Prema Semiconductor Gmbh | Verfahren zur Herstellung von Transistoren |
-
2001
- 2001-11-14 JP JP2001348882A patent/JP3812421B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-11 WO PCT/JP2002/005816 patent/WO2002103807A1/ja not_active Ceased
- 2002-06-11 US US10/362,345 patent/US7023033B2/en not_active Expired - Lifetime
- 2002-06-11 CA CA2420821A patent/CA2420821C/en not_active Expired - Fee Related
- 2002-06-11 CN CNB028021290A patent/CN1238904C/zh not_active Expired - Fee Related
- 2002-06-11 EP EP02736054.4A patent/EP1396890B1/en not_active Expired - Lifetime
- 2002-06-11 KR KR10-2003-7002084A patent/KR100467421B1/ko not_active Expired - Fee Related
- 2002-06-14 TW TW091113045A patent/TW594987B/zh not_active IP Right Cessation
-
2006
- 2006-01-20 US US11/337,143 patent/US7528426B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7528426B2 (en) | 2009-05-05 |
| EP1396890A1 (en) | 2004-03-10 |
| CN1496587A (zh) | 2004-05-12 |
| US20060118813A1 (en) | 2006-06-08 |
| WO2002103807A1 (en) | 2002-12-27 |
| US7023033B2 (en) | 2006-04-04 |
| JP3812421B2 (ja) | 2006-08-23 |
| TW594987B (en) | 2004-06-21 |
| EP1396890A4 (en) | 2007-10-10 |
| CA2420821A1 (en) | 2002-12-27 |
| KR100467421B1 (ko) | 2005-01-27 |
| CN1238904C (zh) | 2006-01-25 |
| US20030168704A1 (en) | 2003-09-11 |
| JP2003068762A (ja) | 2003-03-07 |
| EP1396890B1 (en) | 2013-08-21 |
| KR20030027025A (ko) | 2003-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20170612 |