TW594987B - Lateral junction filed-effect transistors - Google Patents

Lateral junction filed-effect transistors Download PDF

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Publication number
TW594987B
TW594987B TW091113045A TW91113045A TW594987B TW 594987 B TW594987 B TW 594987B TW 091113045 A TW091113045 A TW 091113045A TW 91113045 A TW91113045 A TW 91113045A TW 594987 B TW594987 B TW 594987B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
layer
impurity
region
concentration
Prior art date
Application number
TW091113045A
Other languages
English (en)
Chinese (zh)
Inventor
Shin Harada
Kenichi Hirotsu
Hiroyuki Matsunami
Tsunenobu Kimoto
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of TW594987B publication Critical patent/TW594987B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW091113045A 2001-06-14 2002-06-14 Lateral junction filed-effect transistors TW594987B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001180173 2001-06-14
JP2001348882A JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ

Publications (1)

Publication Number Publication Date
TW594987B true TW594987B (en) 2004-06-21

Family

ID=26616896

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091113045A TW594987B (en) 2001-06-14 2002-06-14 Lateral junction filed-effect transistors

Country Status (8)

Country Link
US (2) US7023033B2 (enExample)
EP (1) EP1396890B1 (enExample)
JP (1) JP3812421B2 (enExample)
KR (1) KR100467421B1 (enExample)
CN (1) CN1238904C (enExample)
CA (1) CA2420821C (enExample)
TW (1) TW594987B (enExample)
WO (1) WO2002103807A1 (enExample)

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KR101109229B1 (ko) * 2010-05-14 2012-01-30 주식회사 케이이씨 이중 접합 게이트를 갖는 반도체 디바이스 및 그 제조 방법
JP2012109348A (ja) 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
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JP6718612B2 (ja) * 2016-05-27 2020-07-08 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
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JP7074320B2 (ja) * 2017-11-16 2022-05-24 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
TWI686872B (zh) * 2018-05-23 2020-03-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
CN110571271B (zh) * 2018-06-05 2023-08-18 世界先进积体电路股份有限公司 半导体装置及其制造方法
JP7128136B2 (ja) 2019-03-08 2022-08-30 株式会社東芝 接合型電界効果トランジスタ
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WO2023079316A1 (en) * 2021-11-08 2023-05-11 Search For The Next Ltd A transistor device and a method of operating thereof
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CN117637854B (zh) 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直型电容耦合栅控结型场效应晶体管及其制备方法
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Also Published As

Publication number Publication date
CA2420821C (en) 2011-08-09
US7528426B2 (en) 2009-05-05
EP1396890A1 (en) 2004-03-10
CN1496587A (zh) 2004-05-12
US20060118813A1 (en) 2006-06-08
WO2002103807A1 (en) 2002-12-27
US7023033B2 (en) 2006-04-04
JP3812421B2 (ja) 2006-08-23
EP1396890A4 (en) 2007-10-10
CA2420821A1 (en) 2002-12-27
KR100467421B1 (ko) 2005-01-27
CN1238904C (zh) 2006-01-25
US20030168704A1 (en) 2003-09-11
JP2003068762A (ja) 2003-03-07
EP1396890B1 (en) 2013-08-21
KR20030027025A (ko) 2003-04-03

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