JP2003068762A5 - - Google Patents

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Publication number
JP2003068762A5
JP2003068762A5 JP2001348882A JP2001348882A JP2003068762A5 JP 2003068762 A5 JP2003068762 A5 JP 2003068762A5 JP 2001348882 A JP2001348882 A JP 2001348882A JP 2001348882 A JP2001348882 A JP 2001348882A JP 2003068762 A5 JP2003068762 A5 JP 2003068762A5
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JP
Japan
Prior art keywords
thickness
case
epitaxial layer
impurity concentration
depth direction
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Application number
JP2001348882A
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English (en)
Japanese (ja)
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JP3812421B2 (ja
JP2003068762A (ja
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Priority claimed from JP2001348882A external-priority patent/JP3812421B2/ja
Priority to JP2001348882A priority Critical patent/JP3812421B2/ja
Priority to CA2420821A priority patent/CA2420821C/en
Priority to KR10-2003-7002084A priority patent/KR100467421B1/ko
Priority to EP02736054.4A priority patent/EP1396890B1/en
Priority to CNB028021290A priority patent/CN1238904C/zh
Priority to PCT/JP2002/005816 priority patent/WO2002103807A1/ja
Priority to US10/362,345 priority patent/US7023033B2/en
Priority to TW091113045A priority patent/TW594987B/zh
Publication of JP2003068762A publication Critical patent/JP2003068762A/ja
Publication of JP2003068762A5 publication Critical patent/JP2003068762A5/ja
Priority to US11/337,143 priority patent/US7528426B2/en
Publication of JP3812421B2 publication Critical patent/JP3812421B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001348882A 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ Expired - Fee Related JP3812421B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2001348882A JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ
PCT/JP2002/005816 WO2002103807A1 (en) 2001-06-14 2002-06-11 Lateral junction type field effect transistor
US10/362,345 US7023033B2 (en) 2001-06-14 2002-06-11 Lateral junction field-effect transistor
KR10-2003-7002084A KR100467421B1 (ko) 2001-06-14 2002-06-11 횡형접합형 전계 효과 트랜지스터
EP02736054.4A EP1396890B1 (en) 2001-06-14 2002-06-11 Lateral junction type field effect transistor
CNB028021290A CN1238904C (zh) 2001-06-14 2002-06-11 横向结型场效应晶体管
CA2420821A CA2420821C (en) 2001-06-14 2002-06-11 Lateral junction type field effect transistor
TW091113045A TW594987B (en) 2001-06-14 2002-06-14 Lateral junction filed-effect transistors
US11/337,143 US7528426B2 (en) 2001-06-14 2006-01-20 Lateral junction field-effect transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-180173 2001-06-14
JP2001180173 2001-06-14
JP2001348882A JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2003068762A JP2003068762A (ja) 2003-03-07
JP2003068762A5 true JP2003068762A5 (enExample) 2004-07-15
JP3812421B2 JP3812421B2 (ja) 2006-08-23

Family

ID=26616896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001348882A Expired - Fee Related JP3812421B2 (ja) 2001-06-14 2001-11-14 横型接合型電界効果トランジスタ

Country Status (8)

Country Link
US (2) US7023033B2 (enExample)
EP (1) EP1396890B1 (enExample)
JP (1) JP3812421B2 (enExample)
KR (1) KR100467421B1 (enExample)
CN (1) CN1238904C (enExample)
CA (1) CA2420821C (enExample)
TW (1) TW594987B (enExample)
WO (1) WO2002103807A1 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078032A (ja) * 2001-09-05 2003-03-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3925253B2 (ja) * 2002-03-15 2007-06-06 住友電気工業株式会社 横型接合型電界効果トランジスタおよびその製造方法
JP4122880B2 (ja) * 2002-07-24 2008-07-23 住友電気工業株式会社 縦型接合型電界効果トランジスタ
JP4610865B2 (ja) * 2003-05-30 2011-01-12 パナソニック株式会社 半導体装置及びその製造方法
JP4730097B2 (ja) * 2003-06-13 2011-07-20 住友電気工業株式会社 電界効果トランジスタ
US7180105B2 (en) * 2004-02-09 2007-02-20 International Rectifier Corporation Normally off JFET
DE102004018153B9 (de) * 2004-04-08 2012-08-23 Austriamicrosystems Ag Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung
US7105875B2 (en) * 2004-06-03 2006-09-12 Wide Bandgap, Llc Lateral power diodes
US7019344B2 (en) * 2004-06-03 2006-03-28 Ranbir Singh Lateral drift vertical metal-insulator semiconductor field effect transistor
US7205629B2 (en) * 2004-06-03 2007-04-17 Widebandgap Llc Lateral super junction field effect transistor
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor
WO2006025772A1 (en) * 2004-09-01 2006-03-09 Cree Sweden Ab Lateral field effect transistor and its fabrication comprisng a spacer layer above and below the channel layer
US8004606B2 (en) 2005-09-08 2011-08-23 Silicon Image, Inc. Original scan line detection
US7449762B1 (en) 2006-04-07 2008-11-11 Wide Bandgap Llc Lateral epitaxial GaN metal insulator semiconductor field effect transistor
JP2008053534A (ja) * 2006-08-25 2008-03-06 Sanyo Electric Co Ltd 接合型ｆｅｔおよびその製造方法
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP5018349B2 (ja) * 2007-08-30 2012-09-05 住友電気工業株式会社 半導体装置
US7560325B1 (en) * 2008-04-14 2009-07-14 Semisouth Laboratories, Inc. Methods of making lateral junction field effect transistors using selective epitaxial growth
JP5077185B2 (ja) * 2008-10-16 2012-11-21 住友電気工業株式会社 横型接合型電界効果トランジスタおよびその製造方法
JP5564890B2 (ja) * 2008-12-16 2014-08-06 住友電気工業株式会社 接合型電界効果トランジスタおよびその製造方法
JP4683141B2 (ja) * 2009-05-01 2011-05-11 住友電気工業株式会社 横型接合型電界効果トランジスタ
US8390039B2 (en) * 2009-11-02 2013-03-05 Analog Devices, Inc. Junction field effect transistor
JP5397289B2 (ja) 2010-03-29 2014-01-22 住友電気工業株式会社 電界効果トランジスタ
JP5611653B2 (ja) * 2010-05-06 2014-10-22 株式会社東芝 窒化物半導体素子
KR101109229B1 (ko) * 2010-05-14 2012-01-30 주식회사 케이이씨 이중 접합 게이트를 갖는 반도체 디바이스 및 그 제조 방법
JP2012109348A (ja) 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
DE102011009487B4 (de) * 2011-01-26 2017-10-19 Austriamicrosystems Ag Asymmetrischer Hochvolt-JFET und Herstellungsverfahren
US9343588B2 (en) * 2011-02-22 2016-05-17 Infineon Technologies Austria Ag Normally-off semiconductor switches and normally-off JFETs
CN103178093B (zh) * 2011-12-26 2015-10-14 上海华虹宏力半导体制造有限公司 高压结型场效应晶体管的结构及制备方法
CN103367414B (zh) * 2012-04-09 2015-10-14 上海华虹宏力半导体制造有限公司 纵向夹断的面结型场效应晶体管结构及制造方法
CN102916049B (zh) * 2012-10-30 2015-04-22 成都芯源系统有限公司 包括结型场效应晶体管的半导体器件及其制造方法
KR101866673B1 (ko) * 2013-12-25 2018-06-11 캐논 가부시끼가이샤 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법
JP6230456B2 (ja) 2014-03-19 2017-11-15 株式会社東芝 半導体装置
US9299857B2 (en) * 2014-06-19 2016-03-29 Macronix International Co., Ltd. Semiconductor device
CN104617155A (zh) * 2015-01-26 2015-05-13 上海华虹宏力半导体制造有限公司 一种改善esd防护能力的jfet
JP6718612B2 (ja) * 2016-05-27 2020-07-08 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
US10079294B2 (en) * 2016-06-28 2018-09-18 Texas Instruments Incorporated Integrated JFET structure with implanted backgate
JP7074320B2 (ja) * 2017-11-16 2022-05-24 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ
TWI686872B (zh) * 2018-05-23 2020-03-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
CN110571271B (zh) * 2018-06-05 2023-08-18 世界先进积体电路股份有限公司 半导体装置及其制造方法
JP7128136B2 (ja) 2019-03-08 2022-08-30 株式会社東芝 接合型電界効果トランジスタ
US11869983B2 (en) * 2020-03-12 2024-01-09 International Business Machines Corporation Low voltage/power junction FET with all-around junction gate
WO2023079316A1 (en) * 2021-11-08 2023-05-11 Search For The Next Ltd A transistor device and a method of operating thereof
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor
CN117637854B (zh) 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直型电容耦合栅控结型场效应晶体管及其制备方法
CN117613098B (zh) 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直沟槽型电容耦合栅控结型场效应晶体管及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3841917A (en) * 1971-09-06 1974-10-15 Philips Nv Methods of manufacturing semiconductor devices
JPS5412680A (en) 1977-06-30 1979-01-30 Matsushita Electric Ind Co Ltd Junction-type field effect transistor and its manufacture
US4176368A (en) 1978-10-10 1979-11-27 National Semiconductor Corporation Junction field effect transistor for use in integrated circuits
JPS5649575A (en) * 1979-09-28 1981-05-06 Hitachi Ltd Junction type field effect semiconductor
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
EP0197116B1 (en) * 1984-10-05 1990-08-08 Analog Devices, Inc. Low-leakage jfet
US4876579A (en) * 1989-01-26 1989-10-24 Harris Corporation Low top gate resistance JFET structure
US5264713A (en) 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5342795A (en) * 1992-04-30 1994-08-30 Texas Instruments Incorporated Method of fabricating power VFET gate-refill
JP3109274B2 (ja) 1992-08-31 2000-11-13 日本電気株式会社 半導体装置およびその製造方法
US5378642A (en) 1993-04-19 1995-01-03 General Electric Company Method of making a silicon carbide junction field effect transistor device for high temperature applications
JPH0730111A (ja) 1993-07-15 1995-01-31 Hitachi Ltd 絶縁ゲート形電界効果トランジスタ
DE19644821C1 (de) 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften
EP0981166A3 (en) * 1998-08-17 2000-04-19 ELMOS Semiconductor AG JFET transistor
ITTO980785A1 (it) 1998-09-16 2000-03-16 M A C S P A Elemento strutturale per un autoveicolo.
DE19844531B4 (de) 1998-09-29 2017-12-14 Prema Semiconductor Gmbh Verfahren zur Herstellung von Transistoren

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