AU2001289109A1 - Metal-assisted chemical etch porous silicon formation method - Google Patents

Metal-assisted chemical etch porous silicon formation method

Info

Publication number
AU2001289109A1
AU2001289109A1 AU2001289109A AU8910901A AU2001289109A1 AU 2001289109 A1 AU2001289109 A1 AU 2001289109A1 AU 2001289109 A AU2001289109 A AU 2001289109A AU 8910901 A AU8910901 A AU 8910901A AU 2001289109 A1 AU2001289109 A1 AU 2001289109A1
Authority
AU
Australia
Prior art keywords
metal
formation method
porous silicon
chemical etch
assisted chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001289109A
Inventor
Paul W Bohn
Xiuling Li
Jonathan V. Sweedler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois
Original Assignee
University of Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Illinois filed Critical University of Illinois
Publication of AU2001289109A1 publication Critical patent/AU2001289109A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface
AU2001289109A 2000-09-15 2001-09-14 Metal-assisted chemical etch porous silicon formation method Abandoned AU2001289109A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/662,682 US6790785B1 (en) 2000-09-15 2000-09-15 Metal-assisted chemical etch porous silicon formation method
US09662682 2000-09-15
PCT/US2001/028934 WO2002023607A1 (en) 2000-09-15 2001-09-14 Metal-assisted chemical etch porous silicon formation method

Publications (1)

Publication Number Publication Date
AU2001289109A1 true AU2001289109A1 (en) 2002-03-26

Family

ID=24658734

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001289109A Abandoned AU2001289109A1 (en) 2000-09-15 2001-09-14 Metal-assisted chemical etch porous silicon formation method

Country Status (3)

Country Link
US (1) US6790785B1 (en)
AU (1) AU2001289109A1 (en)
WO (1) WO2002023607A1 (en)

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WO2014144266A1 (en) 2013-03-15 2014-09-18 Semprius, Inc. Through-silicon vias and interposers formed by metal-catalyzed wet etching
US9306094B2 (en) * 2013-08-23 2016-04-05 Natcore Technology, Inc. System and method for black silicon etching utilizing thin fluid layers
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US9704951B2 (en) 2013-11-15 2017-07-11 The Board Of Trustees Of The University Of Illinois Apparatus and method for magnetic-field guided metal-assisted chemical etching
US9828677B2 (en) * 2014-01-16 2017-11-28 The United States Of America, As Represented By The Secretary Of Commerce Article and process for selective etching
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Also Published As

Publication number Publication date
US6790785B1 (en) 2004-09-14
WO2002023607A1 (en) 2002-03-21

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