AU2002212750A1 - Method for fabricating semiconductor photodetector - Google Patents

Method for fabricating semiconductor photodetector

Info

Publication number
AU2002212750A1
AU2002212750A1 AU2002212750A AU1275002A AU2002212750A1 AU 2002212750 A1 AU2002212750 A1 AU 2002212750A1 AU 2002212750 A AU2002212750 A AU 2002212750A AU 1275002 A AU1275002 A AU 1275002A AU 2002212750 A1 AU2002212750 A1 AU 2002212750A1
Authority
AU
Australia
Prior art keywords
fabricating semiconductor
semiconductor photodetector
photodetector
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002212750A
Inventor
Kazutoshi Nakajima
Minoru Niigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of AU2002212750A1 publication Critical patent/AU2002212750A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
AU2002212750A 2000-11-10 2001-11-09 Method for fabricating semiconductor photodetector Abandoned AU2002212750A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000343940A JP4574833B2 (en) 2000-11-10 2000-11-10 Manufacturing method of semiconductor photodetector
JP2000-343940 2000-11-10
PCT/JP2001/009834 WO2002039506A1 (en) 2000-11-10 2001-11-09 Method for fabricating semiconductor photodetector

Publications (1)

Publication Number Publication Date
AU2002212750A1 true AU2002212750A1 (en) 2002-05-21

Family

ID=18818222

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002212750A Abandoned AU2002212750A1 (en) 2000-11-10 2001-11-09 Method for fabricating semiconductor photodetector

Country Status (5)

Country Link
US (1) US7094664B2 (en)
JP (1) JP4574833B2 (en)
CN (1) CN1221037C (en)
AU (1) AU2002212750A1 (en)
WO (1) WO2002039506A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179258A (en) * 2002-11-25 2004-06-24 Hamamatsu Photonics Kk Ultraviolet sensor
JP4331033B2 (en) * 2004-03-29 2009-09-16 浜松ホトニクス株式会社 Semiconductor light detecting element and manufacturing method thereof
CN100479201C (en) * 2005-06-09 2009-04-15 中国科学院半导体研究所 Gallium nitride-based MSM ultraviolet detector for reducing surface state effect
JP2007123720A (en) * 2005-10-31 2007-05-17 Rohm Co Ltd Photoelectric conversion device and its manufacturing method
JP2007123721A (en) * 2005-10-31 2007-05-17 Rohm Co Ltd Photoelectric transducer and method of manufacturing same
WO2023047599A1 (en) * 2021-09-27 2023-03-30 日本電信電話株式会社 Optical communication device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226649A (en) * 1979-09-11 1980-10-07 The United States Of America As Represented By The Secretary Of The Navy Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques
DE3278606D1 (en) * 1981-04-20 1988-07-07 Hughes Aircraft Co Heterostructure interdigital high speed photoconductive detector
JPS58200525A (en) * 1982-05-18 1983-11-22 Nec Corp Preparation of substrate for semiconductor device
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
JPH03270073A (en) * 1990-03-19 1991-12-02 Toshiba Corp Insb photodiode array element
US5525828A (en) * 1991-10-31 1996-06-11 International Business Machines Corporation High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
JPH05259500A (en) 1992-03-11 1993-10-08 Hikari Keisoku Gijutsu Kaihatsu Kk Photodetector
US5330918A (en) * 1992-08-31 1994-07-19 The United States Of America As Represented By The Secretary Of The Navy Method of forming a high voltage silicon-on-sapphire photocell array
JPH06151946A (en) * 1992-11-12 1994-05-31 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting element and manufacture thereof
JPH09330940A (en) * 1996-06-13 1997-12-22 Sony Corp Manufacture of semiconductor device
JP3963030B2 (en) * 1997-03-26 2007-08-22 ソニー株式会社 Thin film semiconductor manufacturing method
JP2001102523A (en) * 1999-09-28 2001-04-13 Sony Corp Thin-film device and manufacturing method therefor
JP4091261B2 (en) * 2000-10-31 2008-05-28 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof

Also Published As

Publication number Publication date
WO2002039506A1 (en) 2002-05-16
JP4574833B2 (en) 2010-11-04
JP2002151732A (en) 2002-05-24
CN1479947A (en) 2004-03-03
US20050014321A1 (en) 2005-01-20
CN1221037C (en) 2005-09-28
US7094664B2 (en) 2006-08-22

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