JP3589346B2 - 磁気抵抗効果素子および磁気抵抗効果記憶素子 - Google Patents
磁気抵抗効果素子および磁気抵抗効果記憶素子 Download PDFInfo
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- JP3589346B2 JP3589346B2 JP2000182152A JP2000182152A JP3589346B2 JP 3589346 B2 JP3589346 B2 JP 3589346B2 JP 2000182152 A JP2000182152 A JP 2000182152A JP 2000182152 A JP2000182152 A JP 2000182152A JP 3589346 B2 JP3589346 B2 JP 3589346B2
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- film
- ferromagnetic
- ferromagnetic film
- magnetoresistive
- element according
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3204—Exchange coupling of amorphous multilayers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5615—Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5616—Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000182152A JP3589346B2 (ja) | 1999-06-17 | 2000-06-16 | 磁気抵抗効果素子および磁気抵抗効果記憶素子 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17048699 | 1999-06-17 | ||
JP35296299 | 1999-12-13 | ||
JP11-352962 | 1999-12-13 | ||
JP11-170486 | 1999-12-13 | ||
JP2000182152A JP3589346B2 (ja) | 1999-06-17 | 2000-06-16 | 磁気抵抗効果素子および磁気抵抗効果記憶素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003402316A Division JP2004179667A (ja) | 1999-06-17 | 2003-12-01 | 磁気抵抗効果素子および磁気抵抗効果記憶素子およびデジタル信号を記憶させる方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001237472A JP2001237472A (ja) | 2001-08-31 |
JP2001237472A5 JP2001237472A5 (ko) | 2004-11-11 |
JP3589346B2 true JP3589346B2 (ja) | 2004-11-17 |
Family
ID=26493468
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000182152A Expired - Lifetime JP3589346B2 (ja) | 1999-06-17 | 2000-06-16 | 磁気抵抗効果素子および磁気抵抗効果記憶素子 |
JP2003402316A Withdrawn JP2004179667A (ja) | 1999-06-17 | 2003-12-01 | 磁気抵抗効果素子および磁気抵抗効果記憶素子およびデジタル信号を記憶させる方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003402316A Withdrawn JP2004179667A (ja) | 1999-06-17 | 2003-12-01 | 磁気抵抗効果素子および磁気抵抗効果記憶素子およびデジタル信号を記憶させる方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6436526B1 (ko) |
EP (1) | EP1061592A3 (ko) |
JP (2) | JP3589346B2 (ko) |
KR (2) | KR100436318B1 (ko) |
Families Citing this family (203)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3589346B2 (ja) * | 1999-06-17 | 2004-11-17 | 松下電器産業株式会社 | 磁気抵抗効果素子および磁気抵抗効果記憶素子 |
WO2000079522A1 (fr) * | 1999-06-22 | 2000-12-28 | Fujitsu Limited | Element coulissant de tete magnetique et ensemble tete magnetique |
US6424561B1 (en) * | 2000-07-18 | 2002-07-23 | Micron Technology, Inc. | MRAM architecture using offset bits for increased write selectivity |
US6767655B2 (en) * | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
TW544677B (en) * | 2000-12-26 | 2003-08-01 | Matsushita Electric Ind Co Ltd | Magneto-resistance memory device |
US6905780B2 (en) * | 2001-02-01 | 2005-06-14 | Kabushiki Kaisha Toshiba | Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same |
JP3677455B2 (ja) | 2001-02-13 | 2005-08-03 | Necエレクトロニクス株式会社 | 不揮発性磁気記憶装置およびその製造方法 |
US6798624B2 (en) * | 2001-03-15 | 2004-09-28 | Seagate Technology Llc | Magnetization sensor for sensing the write field characteristics of a perpendicular or longitudinal recording head |
DE10118197C2 (de) | 2001-04-11 | 2003-04-03 | Infineon Technologies Ag | Integrierte magnetoresistive Halbleiterspeicheranordnung und Verfahren zum Beschreiben derselben |
JP5019681B2 (ja) | 2001-04-26 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP2002334971A (ja) * | 2001-05-09 | 2002-11-22 | Nec Corp | 磁性メモリ及びその動作方法 |
US6744086B2 (en) | 2001-05-15 | 2004-06-01 | Nve Corporation | Current switched magnetoresistive memory cell |
JP3849460B2 (ja) * | 2001-05-29 | 2006-11-22 | ソニー株式会社 | 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド |
WO2002099906A1 (fr) * | 2001-06-04 | 2002-12-12 | Matsushita Electric Industrial Co., Ltd. | Element magnetoresistant, element de memorisation par magnetoresistance et memoire magnetique |
DE10128964B4 (de) * | 2001-06-15 | 2012-02-09 | Qimonda Ag | Digitale magnetische Speicherzelleneinrichtung |
US6937447B2 (en) * | 2001-09-19 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory |
US6538917B1 (en) * | 2001-09-25 | 2003-03-25 | Hewlett-Packard Development Company, L.P. | Read methods for magneto-resistive device having soft reference layer |
DE10149737A1 (de) * | 2001-10-09 | 2003-04-24 | Infineon Technologies Ag | Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind |
KR100954970B1 (ko) * | 2001-10-12 | 2010-04-29 | 소니 주식회사 | 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법 |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
JP2003151262A (ja) | 2001-11-15 | 2003-05-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
DE10158795B4 (de) * | 2001-11-30 | 2005-12-22 | Infineon Technologies Ag | Magnetoresistive Speicherzelle mit dynamischer Referenzschicht |
TW569442B (en) | 2001-12-18 | 2004-01-01 | Toshiba Corp | Magnetic memory device having magnetic shield layer, and manufacturing method thereof |
US6735111B2 (en) * | 2002-01-16 | 2004-05-11 | Micron Technology, Inc. | Magnetoresistive memory devices and assemblies |
US6498747B1 (en) * | 2002-02-08 | 2002-12-24 | Infineon Technologies Ag | Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects |
JP2003243630A (ja) | 2002-02-18 | 2003-08-29 | Sony Corp | 磁気メモリ装置およびその製造方法 |
KR100469750B1 (ko) * | 2002-02-23 | 2005-02-02 | 학교법인 성균관대학 | 다층산화물 인공격자를 갖는 소자 |
JP2003283000A (ja) | 2002-03-27 | 2003-10-03 | Toshiba Corp | 磁気抵抗効果素子およびこれを有する磁気メモリ |
US6728132B2 (en) * | 2002-04-03 | 2004-04-27 | Micron Technology, Inc. | Synthetic-ferrimagnet sense-layer for high density MRAM applications |
JP4100025B2 (ja) | 2002-04-09 | 2008-06-11 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
JP2003318460A (ja) * | 2002-04-24 | 2003-11-07 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
KR100505104B1 (ko) * | 2002-04-30 | 2005-07-29 | 삼성전자주식회사 | 자기 램 셀들, 그 구조체들 및 그 구동방법 |
JP4042478B2 (ja) * | 2002-06-19 | 2008-02-06 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
US6507513B1 (en) * | 2002-06-20 | 2003-01-14 | Hewlett-Packard Company | Using delayed electrical pulses with magneto-resistive devices |
JP4242117B2 (ja) | 2002-07-11 | 2009-03-18 | 株式会社ルネサステクノロジ | 記憶装置 |
US6850433B2 (en) * | 2002-07-15 | 2005-02-01 | Hewlett-Packard Development Company, Lp. | Magnetic memory device and method |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
JP4674433B2 (ja) * | 2002-07-18 | 2011-04-20 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
US6654278B1 (en) * | 2002-07-31 | 2003-11-25 | Motorola, Inc. | Magnetoresistance random access memory |
JP4178867B2 (ja) | 2002-08-02 | 2008-11-12 | ソニー株式会社 | 磁気抵抗効果素子及び磁気メモリ装置 |
US6831312B2 (en) * | 2002-08-30 | 2004-12-14 | Freescale Semiconductor, Inc. | Amorphous alloys for magnetic devices |
US6803274B2 (en) * | 2002-08-30 | 2004-10-12 | Hewlett-Packard Development Company, L.P. | Magnetic memory cell having an annular data layer and a soft reference layer |
JP3788964B2 (ja) * | 2002-09-10 | 2006-06-21 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US7064974B2 (en) * | 2002-09-12 | 2006-06-20 | Nec Corporation | Magnetic random access memory and method for manufacturing the same |
US6903909B2 (en) * | 2002-11-01 | 2005-06-07 | Hewlett-Packard Development Company, L.P. | Magnetoresistive element including ferromagnetic sublayer having smoothed surface |
JP3935049B2 (ja) * | 2002-11-05 | 2007-06-20 | 株式会社東芝 | 磁気記憶装置及びその製造方法 |
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JP2021144967A (ja) | 2020-03-10 | 2021-09-24 | キオクシア株式会社 | 記憶装置 |
CN111521859B (zh) * | 2020-06-22 | 2021-06-04 | 南方电网数字电网研究院有限公司 | 电力设备的线路电流测量方法、装置及计算机设备 |
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DE4243358A1 (de) * | 1992-12-21 | 1994-06-23 | Siemens Ag | Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung |
JPH0714710A (ja) | 1993-06-25 | 1995-01-17 | Fujitsu Ltd | 磁気抵抗効果素子 |
US5841611A (en) | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5734605A (en) | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
US5801984A (en) | 1996-11-27 | 1998-09-01 | International Business Machines Corporation | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment |
US5838608A (en) | 1997-06-16 | 1998-11-17 | Motorola, Inc. | Multi-layer magnetic random access memory and method for fabricating thereof |
US6111784A (en) | 1997-09-18 | 2000-08-29 | Canon Kabushiki Kaisha | Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element |
DE19853447A1 (de) | 1998-11-19 | 2000-05-25 | Siemens Ag | Magnetischer Speicher |
JP3589346B2 (ja) * | 1999-06-17 | 2004-11-17 | 松下電器産業株式会社 | 磁気抵抗効果素子および磁気抵抗効果記憶素子 |
US6767655B2 (en) * | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
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2000
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- 2000-06-17 KR KR10-2000-0033485A patent/KR100436318B1/ko not_active IP Right Cessation
- 2000-06-19 EP EP00112886A patent/EP1061592A3/en not_active Withdrawn
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EP1061592A2 (en) | 2000-12-20 |
JP2004179667A (ja) | 2004-06-24 |
EP1061592A3 (en) | 2001-09-26 |
US7018725B2 (en) | 2006-03-28 |
KR20030011025A (ko) | 2003-02-06 |
US20020058158A1 (en) | 2002-05-16 |
KR20010007428A (ko) | 2001-01-26 |
KR100436318B1 (ko) | 2004-06-18 |
JP2001237472A (ja) | 2001-08-31 |
KR100439288B1 (ko) | 2004-07-07 |
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