JP3374737B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子

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Publication number
JP3374737B2
JP3374737B2 JP36401297A JP36401297A JP3374737B2 JP 3374737 B2 JP3374737 B2 JP 3374737B2 JP 36401297 A JP36401297 A JP 36401297A JP 36401297 A JP36401297 A JP 36401297A JP 3374737 B2 JP3374737 B2 JP 3374737B2
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
type
superlattice
angstroms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36401297A
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English (en)
Japanese (ja)
Other versions
JPH10335757A (ja
Inventor
慎一 長濱
雅之 妹尾
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP36401297A priority Critical patent/JP3374737B2/ja
Publication of JPH10335757A publication Critical patent/JPH10335757A/ja
Application granted granted Critical
Publication of JP3374737B2 publication Critical patent/JP3374737B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP36401297A 1997-01-09 1997-12-16 窒化物半導体素子 Expired - Fee Related JP3374737B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36401297A JP3374737B2 (ja) 1997-01-09 1997-12-16 窒化物半導体素子

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP9-1937 1997-01-09
JP193797 1997-01-09
JP9-12707 1997-01-27
JP1270797 1997-01-27
JP10279397 1997-04-03
JP9-102793 1997-04-03
JP36401297A JP3374737B2 (ja) 1997-01-09 1997-12-16 窒化物半導体素子

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2002128255A Division JP4378070B2 (ja) 1997-01-09 2002-04-30 窒化物半導体素子
JP2002268261A Division JP3835384B2 (ja) 1997-01-09 2002-09-13 窒化物半導体素子

Publications (2)

Publication Number Publication Date
JPH10335757A JPH10335757A (ja) 1998-12-18
JP3374737B2 true JP3374737B2 (ja) 2003-02-10

Family

ID=27453506

Family Applications (4)

Application Number Title Priority Date Filing Date
JP36401297A Expired - Fee Related JP3374737B2 (ja) 1997-01-09 1997-12-16 窒化物半導体素子
JP2002128255A Expired - Fee Related JP4378070B2 (ja) 1997-01-09 2002-04-30 窒化物半導体素子
JP2002268261A Expired - Fee Related JP3835384B2 (ja) 1997-01-09 2002-09-13 窒化物半導体素子
JP2006333737A Expired - Fee Related JP4816434B2 (ja) 1997-01-09 2006-12-11 窒化物半導体素子

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2002128255A Expired - Fee Related JP4378070B2 (ja) 1997-01-09 2002-04-30 窒化物半導体素子
JP2002268261A Expired - Fee Related JP3835384B2 (ja) 1997-01-09 2002-09-13 窒化物半導体素子
JP2006333737A Expired - Fee Related JP4816434B2 (ja) 1997-01-09 2006-12-11 窒化物半導体素子

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JP (4) JP3374737B2 (me)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
US8536601B2 (en) 2009-06-10 2013-09-17 Toshiba Techno Center, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US8994064B2 (en) 2011-09-03 2015-03-31 Kabushiki Kaisha Toshiba Led that has bounding silicon-doped regions on either side of a strain release layer
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US9018643B2 (en) 2011-09-06 2015-04-28 Kabushiki Kaisha Toshiba GaN LEDs with improved area and method for making the same
US9130068B2 (en) 2011-09-29 2015-09-08 Manutius Ip, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9159869B2 (en) 2011-08-03 2015-10-13 Kabushiki Kaisha Toshiba LED on silicon substrate using zinc-sulfide as buffer layer
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US10174439B2 (en) 2011-07-25 2019-01-08 Samsung Electronics Co., Ltd. Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow

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US6841800B2 (en) 1997-12-26 2005-01-11 Matsushita Electric Industrial Co., Ltd. Light-emitting device comprising a gallium-nitride-group compound-semiconductor
US7193246B1 (en) 1998-03-12 2007-03-20 Nichia Corporation Nitride semiconductor device
JP3678399B2 (ja) * 1999-01-29 2005-08-03 株式会社東芝 窒化物系半導体レーザ装置
JP2000252591A (ja) * 1999-02-26 2000-09-14 Sanyo Electric Co Ltd 窒化物系半導体素子及びその製造方法
JP4544665B2 (ja) * 1999-09-01 2010-09-15 学校法人 名城大学 半導体レーザ
JP4712169B2 (ja) * 1999-09-10 2011-06-29 シャープ株式会社 窒化物系半導体レーザ素子および光学式情報再生装置
US6441393B2 (en) * 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers
JP2001168385A (ja) 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
JP5145617B2 (ja) * 2000-07-03 2013-02-20 日亜化学工業株式会社 ｎ型窒化物半導体積層体およびそれを用いる半導体素子
KR100736600B1 (ko) * 2000-07-04 2007-07-09 엘지전자 주식회사 질화물 반도체 레이저 다이오드 제조 방법
JP2002100803A (ja) * 2000-09-22 2002-04-05 Shiro Sakai 窒化ガリウム系化合物半導体素子及び電極形成方法
JP3453558B2 (ja) 2000-12-25 2003-10-06 松下電器産業株式会社 窒化物半導体素子
JP2002289914A (ja) * 2001-03-28 2002-10-04 Pioneer Electronic Corp 窒化物半導体素子
JP2002319743A (ja) * 2001-04-20 2002-10-31 Ricoh Co Ltd ｐ型ＩＩＩ族窒化物半導体および半導体装置およびその作製方法
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP4734786B2 (ja) * 2001-07-04 2011-07-27 日亜化学工業株式会社 窒化ガリウム系化合物半導体基板、及びその製造方法
JP4360066B2 (ja) * 2001-07-09 2009-11-11 日亜化学工業株式会社 窒化ガリウム系発光素子
JP4278399B2 (ja) * 2003-02-13 2009-06-10 シャープ株式会社 酸化物半導体発光素子
JP4553583B2 (ja) * 2003-12-26 2010-09-29 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
JP4854178B2 (ja) * 2004-01-28 2012-01-18 住友電気工業株式会社 半導体素子
US7345297B2 (en) 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
TWI270217B (en) * 2004-02-24 2007-01-01 Showa Denko Kk Gallium nitride-based compound semiconductor multilayer structure and production method thereof
JP2005268581A (ja) 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JP5082444B2 (ja) * 2004-04-28 2012-11-28 三菱化学株式会社 窒化物半導体発光素子
KR100611491B1 (ko) * 2004-08-26 2006-08-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2008511154A (ja) * 2004-08-26 2008-04-10 エルジー イノテック カンパニー リミテッド 窒化物半導体発光素子及びその製造方法
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
JP2006108585A (ja) 2004-10-08 2006-04-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP4541318B2 (ja) * 2005-04-27 2010-09-08 パナソニック株式会社 窒化物半導体発光・受光素子
KR100610639B1 (ko) * 2005-07-22 2006-08-09 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
KR100773559B1 (ko) 2005-11-18 2007-11-05 삼성전자주식회사 반도체 소자 및 그 제조방법
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
JP2008227103A (ja) * 2007-03-12 2008-09-25 Rohm Co Ltd ＧａＮ系半導体発光素子
JP2008244360A (ja) * 2007-03-28 2008-10-09 Furukawa Electric Co Ltd:The 半導体発光素子
JP2008311579A (ja) 2007-06-18 2008-12-25 Sharp Corp 窒化物半導体発光素子の製造方法
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
TWI381547B (zh) * 2007-11-14 2013-01-01 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體及其製造方法
EP2221856B1 (en) 2007-11-21 2020-09-09 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
EP2221855A4 (en) 2007-11-21 2013-08-07 Mitsubishi Chem Corp NITRIDE SEMICONDUCTOR AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL
DE102007057756B4 (de) * 2007-11-30 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
RU2369942C1 (ru) 2008-02-21 2009-10-10 Самсунг Электро-Меканикс Ко., Лтд. Светоизлучающий прибор на основе нитридного полупроводника
JP2009277844A (ja) * 2008-05-14 2009-11-26 Rohm Co Ltd 窒化物半導体レーザ素子
JP2010087217A (ja) 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5453780B2 (ja) 2008-11-20 2014-03-26 三菱化学株式会社 窒化物半導体
WO2010150809A1 (ja) * 2009-06-24 2010-12-29 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP5310382B2 (ja) * 2009-08-24 2013-10-09 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子、及びｉｉｉ族窒化物半導体光素子を作製する方法
JP2010021576A (ja) * 2009-10-19 2010-01-28 Ricoh Co Ltd 半導体装置の製造方法
KR101662037B1 (ko) * 2009-12-02 2016-10-05 삼성전자 주식회사 발광 소자 및 그 제조 방법
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US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
JP2013207046A (ja) 2012-03-28 2013-10-07 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子およびその製造方法
US9401452B2 (en) * 2012-09-14 2016-07-26 Palo Alto Research Center Incorporated P-side layers for short wavelength light emitters
US9248228B2 (en) 2013-01-18 2016-02-02 Peter L. Bono Suction and irrigation apparatus with anti-clogging capability
JP5880880B2 (ja) * 2013-03-29 2016-03-09 ウシオ電機株式会社 窒化物発光素子
JP6025058B2 (ja) * 2013-07-30 2016-11-16 ウシオ電機株式会社 窒化物半導体発光素子
JP5974980B2 (ja) * 2013-05-31 2016-08-23 ウシオ電機株式会社 窒化物半導体発光素子
KR20160003845A (ko) * 2013-05-31 2016-01-11 우시오덴키 가부시키가이샤 질화물 반도체 발광 소자 및 그것의 제조 방법
JP5907210B2 (ja) * 2014-05-26 2016-04-26 株式会社リコー 半導体装置の製造方法
KR102237111B1 (ko) * 2014-07-28 2021-04-08 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102212781B1 (ko) * 2014-07-29 2021-02-05 엘지이노텍 주식회사 발광소자 및 조명시스템
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CN113964224B (zh) * 2021-12-22 2022-04-01 至芯半导体(杭州)有限公司 半导体紫外探测器芯片及其外延结构
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Cited By (31)

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US9142742B2 (en) 2009-06-10 2015-09-22 Kabushiki Kaisha Toshiba Thin-film LED with P and N contacts electrically isolated from the substrate
US8536601B2 (en) 2009-06-10 2013-09-17 Toshiba Techno Center, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
US8871539B2 (en) 2009-06-10 2014-10-28 Kabushiki Kaisha Toshiba Thin-film LED with P and N contacts electrically isolated from the substrate
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
US9012953B2 (en) 2009-11-25 2015-04-21 Kabushiki Kaisha Toshiba LED with improved injection efficiency
US8684749B2 (en) 2009-11-25 2014-04-01 Toshiba Techno Center Inc. LED with improved injection efficiency
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US10174439B2 (en) 2011-07-25 2019-01-08 Samsung Electronics Co., Ltd. Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US9159869B2 (en) 2011-08-03 2015-10-13 Kabushiki Kaisha Toshiba LED on silicon substrate using zinc-sulfide as buffer layer
US9070833B2 (en) 2011-08-04 2015-06-30 Kabushiki Kaisha Toshiba Distributed current blocking structures for light emitting diodes
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8981410B1 (en) 2011-09-01 2015-03-17 Kabushiki Kaisha Toshiba Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8994064B2 (en) 2011-09-03 2015-03-31 Kabushiki Kaisha Toshiba Led that has bounding silicon-doped regions on either side of a strain release layer
US9018643B2 (en) 2011-09-06 2015-04-28 Kabushiki Kaisha Toshiba GaN LEDs with improved area and method for making the same
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US9130068B2 (en) 2011-09-29 2015-09-08 Manutius Ip, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US9299881B2 (en) 2011-09-29 2016-03-29 Kabishiki Kaisha Toshiba Light emitting devices having light coupling layers
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9490392B2 (en) 2011-09-29 2016-11-08 Toshiba Corporation P-type doping layers for use with light emitting devices
US9123853B2 (en) 2011-11-09 2015-09-01 Manutius Ip, Inc. Series connected segmented LED
US9391234B2 (en) 2011-11-09 2016-07-12 Toshiba Corporation Series connected segmented LED
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED

Also Published As

Publication number Publication date
JP2003101160A (ja) 2003-04-04
JP2003017746A (ja) 2003-01-17
JP2007067454A (ja) 2007-03-15
JP4816434B2 (ja) 2011-11-16
JP4378070B2 (ja) 2009-12-02
JPH10335757A (ja) 1998-12-18
JP3835384B2 (ja) 2006-10-18

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