JP2023109854A5 - - Google Patents
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- Publication number
- JP2023109854A5 JP2023109854A5 JP2023078794A JP2023078794A JP2023109854A5 JP 2023109854 A5 JP2023109854 A5 JP 2023109854A5 JP 2023078794 A JP2023078794 A JP 2023078794A JP 2023078794 A JP2023078794 A JP 2023078794A JP 2023109854 A5 JP2023109854 A5 JP 2023109854A5
- Authority
- JP
- Japan
- Prior art keywords
- alkylaminohydroxylsilane
- alkylaminoalkoxysilane
- integer
- composition
- aminopropyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000004377 microelectronic Methods 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 125000003545 alkoxy group Chemical group 0.000 claims 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims 1
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims 1
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 claims 1
- GLISOBUNKGBQCL-UHFFFAOYSA-N 3-[ethoxy(dimethyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(C)CCCN GLISOBUNKGBQCL-UHFFFAOYSA-N 0.000 claims 1
- MYYHQYQIMDUNNW-UHFFFAOYSA-N 3-[fluoro(dimethyl)silyl]propan-1-amine Chemical compound C[Si](C)(F)CCCN MYYHQYQIMDUNNW-UHFFFAOYSA-N 0.000 claims 1
- JTXUAHIMULPXKY-UHFFFAOYSA-N 3-trihydroxysilylpropan-1-amine Chemical compound NCCC[Si](O)(O)O JTXUAHIMULPXKY-UHFFFAOYSA-N 0.000 claims 1
- 229910019142 PO4 Inorganic materials 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 150000003973 alkyl amines Chemical class 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- -1 hexafluorosilicic acid Chemical compound 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 claims 1
- QIOYHIUHPGORLS-UHFFFAOYSA-N n,n-dimethyl-3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN(C)C QIOYHIUHPGORLS-UHFFFAOYSA-N 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862767904P | 2018-11-15 | 2018-11-15 | |
| US62/767,904 | 2018-11-15 | ||
| PCT/US2019/060974 WO2020102228A1 (en) | 2018-11-15 | 2019-11-12 | Silicon nitride etching composition and method |
| JP2021526685A JP7438211B2 (ja) | 2018-11-15 | 2019-11-12 | 窒化ケイ素エッチング組成物及び方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021526685A Division JP7438211B2 (ja) | 2018-11-15 | 2019-11-12 | 窒化ケイ素エッチング組成物及び方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023109854A JP2023109854A (ja) | 2023-08-08 |
| JP2023109854A5 true JP2023109854A5 (https=) | 2024-03-01 |
| JP7583105B2 JP7583105B2 (ja) | 2024-11-13 |
Family
ID=70727494
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021526685A Active JP7438211B2 (ja) | 2018-11-15 | 2019-11-12 | 窒化ケイ素エッチング組成物及び方法 |
| JP2023078794A Active JP7583105B2 (ja) | 2018-11-15 | 2023-05-11 | 窒化ケイ素エッチング組成物及び方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021526685A Active JP7438211B2 (ja) | 2018-11-15 | 2019-11-12 | 窒化ケイ素エッチング組成物及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US11053440B2 (https=) |
| JP (2) | JP7438211B2 (https=) |
| KR (2) | KR20240013860A (https=) |
| CN (1) | CN112996881A (https=) |
| SG (1) | SG11202103910PA (https=) |
| TW (2) | TWI878801B (https=) |
| WO (1) | WO2020102228A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240013860A (ko) * | 2018-11-15 | 2024-01-30 | 엔테그리스, 아이엔씨. | 질화규소 에칭 조성물 및 방법 |
| SG11202109069WA (en) * | 2019-02-20 | 2021-09-29 | Weimin Li | Need for si3n4 selective removal by wet chemistry |
| JP7233252B2 (ja) * | 2019-03-07 | 2023-03-06 | 関東化学株式会社 | 窒化ケイ素エッチング液組成物 |
| WO2021112932A2 (en) * | 2019-08-21 | 2021-06-10 | Entegris, Inc. | Improved formulations for high selective silicon nitride etch |
| JP7646809B2 (ja) * | 2020-07-30 | 2025-03-17 | インテグリス・インコーポレーテッド | 窒化シリコン膜を選択的にエッチングするための組成物及び方法 |
| KR102345842B1 (ko) * | 2020-09-21 | 2021-12-31 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| TWI880745B (zh) | 2021-05-07 | 2025-04-11 | 美商恩特葛瑞斯股份有限公司 | 過濾器及自液體組合物中移除污染物之方法 |
| JP7641406B2 (ja) * | 2021-05-12 | 2025-03-06 | インテグリス・インコーポレーテッド | 選択的エッチャント組成物および方法 |
| US12012540B2 (en) | 2021-05-26 | 2024-06-18 | Entegris, Inc. | Compositions and methods for selectively etching silicon nitride films |
| KR102713360B1 (ko) * | 2021-11-29 | 2024-10-07 | (주)후성 | 실리콘 질화막 에칭 조성물 및 이의 제조방법 |
| JP2023109710A (ja) * | 2022-01-27 | 2023-08-08 | ステラケミファ株式会社 | 微細加工処理剤、及び微細加工処理方法 |
| CN116631852A (zh) * | 2022-02-14 | 2023-08-22 | 联芯集成电路制造(厦门)有限公司 | 硬掩模层的移除方法 |
| JP2025515839A (ja) | 2022-05-13 | 2025-05-20 | インテグリス・インコーポレーテッド | 窒化ケイ素エッチング組成物および方法 |
| CN115873599B (zh) * | 2022-10-10 | 2024-05-17 | 湖北兴福电子材料股份有限公司 | 氮化硅/氧化硅的3d nand结构片的选择性蚀刻液 |
| CN117384642A (zh) * | 2023-09-13 | 2024-01-12 | 湖北兴福电子材料股份有限公司 | 一种选择性蚀刻液 |
| WO2025250786A1 (en) * | 2024-05-31 | 2025-12-04 | Entegris, Inc. | Selective silicon nitride etching compositions and related systems and related methods |
| CN119081702B (zh) * | 2024-11-06 | 2025-04-15 | 浙江尚能实业股份有限公司 | 一种低表面张力二氧化硅蚀刻液及其制备方法和应用 |
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| US6162370A (en) | 1998-08-28 | 2000-12-19 | Ashland Inc. | Composition and method for selectively etching a silicon nitride film |
| KR100327342B1 (ko) | 1999-10-27 | 2002-03-06 | 윤종용 | 반도체소자 제조용 식각조성물 및 이 식각조성물을 이용한 식각방법 |
| US20030022800A1 (en) | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
| US20060021974A1 (en) | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| KR20060108436A (ko) | 2005-04-13 | 2006-10-18 | 매그나칩 반도체 유한회사 | 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법 |
| US8025811B2 (en) | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
| DE102007012578A1 (de) * | 2006-09-01 | 2008-03-06 | Bühler PARTEC GmbH | Kationisch stabilisierte wässrige Silicadispersion, Verfahren zu deren Herstellung und deren Verwendung |
| US8778210B2 (en) * | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| JP5332197B2 (ja) * | 2007-01-12 | 2013-11-06 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
| TW200849371A (en) * | 2007-02-28 | 2008-12-16 | Tosoh Corp | Etching method and etching composition useful for the method |
| KR101097277B1 (ko) | 2009-10-07 | 2011-12-22 | 솔브레인 주식회사 | 습식 식각용 조성물 |
| JP2012033561A (ja) * | 2010-07-28 | 2012-02-16 | Sanyo Chem Ind Ltd | 窒化ケイ素用エッチング液 |
| JP2012099550A (ja) * | 2010-10-29 | 2012-05-24 | Sanyo Chem Ind Ltd | 窒化ケイ素用エッチング液 |
| KR101391605B1 (ko) | 2010-12-31 | 2014-05-08 | 솔브레인 주식회사 | 실리콘 질화막 식각액 조성물 |
| PH12014500150A1 (en) | 2011-08-09 | 2014-02-24 | Basf Se | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
| JP5913869B2 (ja) | 2011-08-31 | 2016-04-27 | 林純薬工業株式会社 | エッチング液組成物およびエッチング方法 |
| KR101335855B1 (ko) | 2011-12-20 | 2013-12-02 | 오씨아이 주식회사 | 실리콘 질화막의 에칭 용액 |
| KR101380487B1 (ko) | 2012-05-09 | 2014-04-01 | 오씨아이 주식회사 | 실리콘 질화막의 에칭 용액 |
| JP2014099480A (ja) | 2012-11-13 | 2014-05-29 | Fujifilm Corp | 半導体基板のエッチング方法及び半導体素子の製造方法 |
| JP6180298B2 (ja) | 2013-11-27 | 2017-08-16 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
| JP6580397B2 (ja) | 2014-07-17 | 2019-09-25 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
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| CN108028198B (zh) * | 2015-08-26 | 2022-10-18 | 株式会社Adeka | 蚀刻液组合物以及蚀刻方法 |
| US20170066944A1 (en) * | 2015-09-03 | 2017-03-09 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
| KR102443370B1 (ko) * | 2015-11-20 | 2022-09-15 | 동우 화인켐 주식회사 | 실리콘 질화막 식각액 조성물 |
| WO2017095022A1 (ko) | 2015-12-04 | 2017-06-08 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| KR102545804B1 (ko) * | 2015-12-04 | 2023-06-20 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| US10515820B2 (en) | 2016-03-30 | 2019-12-24 | Tokyo Electron Limited | Process and apparatus for processing a nitride structure without silica deposition |
| CN107345137A (zh) * | 2016-05-04 | 2017-11-14 | Oci有限公司 | 能够抑制颗粒出现的蚀刻溶液 |
| US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
| KR102424391B1 (ko) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| KR102240647B1 (ko) * | 2017-03-28 | 2021-04-15 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
| KR101828437B1 (ko) | 2017-04-06 | 2018-03-29 | 주식회사 디엔에스 | 실리콘 질화막 식각용 조성물. |
| KR102258316B1 (ko) * | 2018-06-25 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
| KR20240013860A (ko) * | 2018-11-15 | 2024-01-30 | 엔테그리스, 아이엔씨. | 질화규소 에칭 조성물 및 방법 |
-
2019
- 2019-11-12 KR KR1020247002231A patent/KR20240013860A/ko active Pending
- 2019-11-12 KR KR1020217014303A patent/KR102628802B1/ko active Active
- 2019-11-12 SG SG11202103910PA patent/SG11202103910PA/en unknown
- 2019-11-12 US US16/681,449 patent/US11053440B2/en active Active
- 2019-11-12 JP JP2021526685A patent/JP7438211B2/ja active Active
- 2019-11-12 WO PCT/US2019/060974 patent/WO2020102228A1/en not_active Ceased
- 2019-11-12 CN CN201980073936.8A patent/CN112996881A/zh active Pending
- 2019-11-15 TW TW112106253A patent/TWI878801B/zh active
- 2019-11-15 TW TW108141573A patent/TWI797396B/zh active
-
2021
- 2021-06-07 US US17/341,138 patent/US11697767B2/en active Active
-
2023
- 2023-05-11 JP JP2023078794A patent/JP7583105B2/ja active Active
- 2023-05-24 US US18/201,363 patent/US20230295502A1/en active Pending
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