TWI878801B - 氮化矽蝕刻組合物及方法 - Google Patents

氮化矽蝕刻組合物及方法 Download PDF

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TWI878801B
TWI878801B TW112106253A TW112106253A TWI878801B TW I878801 B TWI878801 B TW I878801B TW 112106253 A TW112106253 A TW 112106253A TW 112106253 A TW112106253 A TW 112106253A TW I878801 B TWI878801 B TW I878801B
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silicon nitride
composition
weight percent
acid
phosphoric acid
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TW112106253A
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Chinese (zh)
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TW202325824A (zh
Inventor
史蒂芬 M 比洛德
洪性辰
吳幸臻
楊閔傑
艾曼紐 Ｉ 庫柏
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美商恩特葛瑞斯股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/68—Wet etching of insulating materials
    • H10P50/683—Wet etching of insulating materials of inorganic materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW112106253A 2018-11-15 2019-11-15 氮化矽蝕刻組合物及方法 TWI878801B (zh)

Applications Claiming Priority (2)

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US201862767904P 2018-11-15 2018-11-15
US62/767,904 2018-11-15

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TW202325824A TW202325824A (zh) 2023-07-01
TWI878801B true TWI878801B (zh) 2025-04-01

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US (3) US11053440B2 (https=)
JP (2) JP7438211B2 (https=)
KR (2) KR20240013860A (https=)
CN (1) CN112996881A (https=)
SG (1) SG11202103910PA (https=)
TW (2) TWI878801B (https=)
WO (1) WO2020102228A1 (https=)

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WO2021112932A2 (en) * 2019-08-21 2021-06-10 Entegris, Inc. Improved formulations for high selective silicon nitride etch
JP7646809B2 (ja) * 2020-07-30 2025-03-17 インテグリス・インコーポレーテッド 窒化シリコン膜を選択的にエッチングするための組成物及び方法
KR102345842B1 (ko) * 2020-09-21 2021-12-31 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
TWI880745B (zh) 2021-05-07 2025-04-11 美商恩特葛瑞斯股份有限公司 過濾器及自液體組合物中移除污染物之方法
JP7641406B2 (ja) * 2021-05-12 2025-03-06 インテグリス・インコーポレーテッド 選択的エッチャント組成物および方法
US12012540B2 (en) 2021-05-26 2024-06-18 Entegris, Inc. Compositions and methods for selectively etching silicon nitride films
KR102713360B1 (ko) * 2021-11-29 2024-10-07 (주)후성 실리콘 질화막 에칭 조성물 및 이의 제조방법
JP2023109710A (ja) * 2022-01-27 2023-08-08 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
CN116631852A (zh) * 2022-02-14 2023-08-22 联芯集成电路制造(厦门)有限公司 硬掩模层的移除方法
JP2025515839A (ja) 2022-05-13 2025-05-20 インテグリス・インコーポレーテッド 窒化ケイ素エッチング組成物および方法
CN115873599B (zh) * 2022-10-10 2024-05-17 湖北兴福电子材料股份有限公司 氮化硅/氧化硅的3d nand结构片的选择性蚀刻液
CN117384642A (zh) * 2023-09-13 2024-01-12 湖北兴福电子材料股份有限公司 一种选择性蚀刻液
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JP2022507589A (ja) 2022-01-18
TW202026403A (zh) 2020-07-16
JP2023109854A (ja) 2023-08-08
KR20210066007A (ko) 2021-06-04
JP7438211B2 (ja) 2024-02-26
US20200157423A1 (en) 2020-05-21
US20230295502A1 (en) 2023-09-21
CN112996881A (zh) 2021-06-18
JP7583105B2 (ja) 2024-11-13
TWI797396B (zh) 2023-04-01
SG11202103910PA (en) 2021-05-28
US11053440B2 (en) 2021-07-06
TW202325824A (zh) 2023-07-01
US11697767B2 (en) 2023-07-11
US20210296136A1 (en) 2021-09-23
KR102628802B1 (ko) 2024-01-24
KR20240013860A (ko) 2024-01-30
WO2020102228A1 (en) 2020-05-22

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