KR20240013860A - 질화규소 에칭 조성물 및 방법 - Google Patents
질화규소 에칭 조성물 및 방법 Download PDFInfo
- Publication number
- KR20240013860A KR20240013860A KR1020247002231A KR20247002231A KR20240013860A KR 20240013860 A KR20240013860 A KR 20240013860A KR 1020247002231 A KR1020247002231 A KR 1020247002231A KR 20247002231 A KR20247002231 A KR 20247002231A KR 20240013860 A KR20240013860 A KR 20240013860A
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- silicon nitride
- silane
- acid
- phosphoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/68—Wet etching of insulating materials
- H10P50/683—Wet etching of insulating materials of inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Weting (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862767904P | 2018-11-15 | 2018-11-15 | |
| US62/767,904 | 2018-11-15 | ||
| PCT/US2019/060974 WO2020102228A1 (en) | 2018-11-15 | 2019-11-12 | Silicon nitride etching composition and method |
| KR1020217014303A KR102628802B1 (ko) | 2018-11-15 | 2019-11-12 | 질화규소 에칭 조성물 및 방법 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217014303A Division KR102628802B1 (ko) | 2018-11-15 | 2019-11-12 | 질화규소 에칭 조성물 및 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240013860A true KR20240013860A (ko) | 2024-01-30 |
Family
ID=70727494
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247002231A Pending KR20240013860A (ko) | 2018-11-15 | 2019-11-12 | 질화규소 에칭 조성물 및 방법 |
| KR1020217014303A Active KR102628802B1 (ko) | 2018-11-15 | 2019-11-12 | 질화규소 에칭 조성물 및 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217014303A Active KR102628802B1 (ko) | 2018-11-15 | 2019-11-12 | 질화규소 에칭 조성물 및 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US11053440B2 (https=) |
| JP (2) | JP7438211B2 (https=) |
| KR (2) | KR20240013860A (https=) |
| CN (1) | CN112996881A (https=) |
| SG (1) | SG11202103910PA (https=) |
| TW (2) | TWI878801B (https=) |
| WO (1) | WO2020102228A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240013860A (ko) * | 2018-11-15 | 2024-01-30 | 엔테그리스, 아이엔씨. | 질화규소 에칭 조성물 및 방법 |
| SG11202109069WA (en) * | 2019-02-20 | 2021-09-29 | Weimin Li | Need for si3n4 selective removal by wet chemistry |
| JP7233252B2 (ja) * | 2019-03-07 | 2023-03-06 | 関東化学株式会社 | 窒化ケイ素エッチング液組成物 |
| WO2021112932A2 (en) * | 2019-08-21 | 2021-06-10 | Entegris, Inc. | Improved formulations for high selective silicon nitride etch |
| JP7646809B2 (ja) * | 2020-07-30 | 2025-03-17 | インテグリス・インコーポレーテッド | 窒化シリコン膜を選択的にエッチングするための組成物及び方法 |
| KR102345842B1 (ko) * | 2020-09-21 | 2021-12-31 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| TWI880745B (zh) | 2021-05-07 | 2025-04-11 | 美商恩特葛瑞斯股份有限公司 | 過濾器及自液體組合物中移除污染物之方法 |
| JP7641406B2 (ja) * | 2021-05-12 | 2025-03-06 | インテグリス・インコーポレーテッド | 選択的エッチャント組成物および方法 |
| US12012540B2 (en) | 2021-05-26 | 2024-06-18 | Entegris, Inc. | Compositions and methods for selectively etching silicon nitride films |
| KR102713360B1 (ko) * | 2021-11-29 | 2024-10-07 | (주)후성 | 실리콘 질화막 에칭 조성물 및 이의 제조방법 |
| JP2023109710A (ja) * | 2022-01-27 | 2023-08-08 | ステラケミファ株式会社 | 微細加工処理剤、及び微細加工処理方法 |
| CN116631852A (zh) * | 2022-02-14 | 2023-08-22 | 联芯集成电路制造(厦门)有限公司 | 硬掩模层的移除方法 |
| JP2025515839A (ja) | 2022-05-13 | 2025-05-20 | インテグリス・インコーポレーテッド | 窒化ケイ素エッチング組成物および方法 |
| CN115873599B (zh) * | 2022-10-10 | 2024-05-17 | 湖北兴福电子材料股份有限公司 | 氮化硅/氧化硅的3d nand结构片的选择性蚀刻液 |
| CN117384642A (zh) * | 2023-09-13 | 2024-01-12 | 湖北兴福电子材料股份有限公司 | 一种选择性蚀刻液 |
| WO2025250786A1 (en) * | 2024-05-31 | 2025-12-04 | Entegris, Inc. | Selective silicon nitride etching compositions and related systems and related methods |
| CN119081702B (zh) * | 2024-11-06 | 2025-04-15 | 浙江尚能实业股份有限公司 | 一种低表面张力二氧化硅蚀刻液及其制备方法和应用 |
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| US6162370A (en) | 1998-08-28 | 2000-12-19 | Ashland Inc. | Composition and method for selectively etching a silicon nitride film |
| KR100327342B1 (ko) | 1999-10-27 | 2002-03-06 | 윤종용 | 반도체소자 제조용 식각조성물 및 이 식각조성물을 이용한 식각방법 |
| US20030022800A1 (en) | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
| US20060021974A1 (en) | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| KR20060108436A (ko) | 2005-04-13 | 2006-10-18 | 매그나칩 반도체 유한회사 | 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법 |
| US8025811B2 (en) | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
| DE102007012578A1 (de) * | 2006-09-01 | 2008-03-06 | Bühler PARTEC GmbH | Kationisch stabilisierte wässrige Silicadispersion, Verfahren zu deren Herstellung und deren Verwendung |
| US8778210B2 (en) * | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| JP5332197B2 (ja) * | 2007-01-12 | 2013-11-06 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
| TW200849371A (en) * | 2007-02-28 | 2008-12-16 | Tosoh Corp | Etching method and etching composition useful for the method |
| KR101097277B1 (ko) | 2009-10-07 | 2011-12-22 | 솔브레인 주식회사 | 습식 식각용 조성물 |
| JP2012033561A (ja) * | 2010-07-28 | 2012-02-16 | Sanyo Chem Ind Ltd | 窒化ケイ素用エッチング液 |
| JP2012099550A (ja) * | 2010-10-29 | 2012-05-24 | Sanyo Chem Ind Ltd | 窒化ケイ素用エッチング液 |
| KR101391605B1 (ko) | 2010-12-31 | 2014-05-08 | 솔브레인 주식회사 | 실리콘 질화막 식각액 조성물 |
| PH12014500150A1 (en) | 2011-08-09 | 2014-02-24 | Basf Se | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
| JP5913869B2 (ja) | 2011-08-31 | 2016-04-27 | 林純薬工業株式会社 | エッチング液組成物およびエッチング方法 |
| KR101335855B1 (ko) | 2011-12-20 | 2013-12-02 | 오씨아이 주식회사 | 실리콘 질화막의 에칭 용액 |
| KR101380487B1 (ko) | 2012-05-09 | 2014-04-01 | 오씨아이 주식회사 | 실리콘 질화막의 에칭 용액 |
| JP2014099480A (ja) | 2012-11-13 | 2014-05-29 | Fujifilm Corp | 半導体基板のエッチング方法及び半導体素子の製造方法 |
| JP6180298B2 (ja) | 2013-11-27 | 2017-08-16 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
| JP6580397B2 (ja) | 2014-07-17 | 2019-09-25 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
| US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| KR20160050536A (ko) | 2014-10-30 | 2016-05-11 | 램테크놀러지 주식회사 | 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| WO2016096083A1 (en) | 2014-12-19 | 2016-06-23 | Merck Patent Gmbh | Agent for increasing etching rates |
| US10301580B2 (en) * | 2014-12-30 | 2019-05-28 | Versum Materials Us, Llc | Stripping compositions having high WN/W etching selectivity |
| KR101757812B1 (ko) | 2015-05-29 | 2017-07-14 | 세메스 주식회사 | 인산 재생 유닛 및 방법, 그리고 기판 처리 장치 및 방법 |
| KR101728951B1 (ko) | 2015-06-25 | 2017-04-21 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 |
| KR20170009240A (ko) * | 2015-07-16 | 2017-01-25 | 동우 화인켐 주식회사 | 비불소계 실리콘 질화막 식각 조성물 |
| CN108028198B (zh) * | 2015-08-26 | 2022-10-18 | 株式会社Adeka | 蚀刻液组合物以及蚀刻方法 |
| US20170066944A1 (en) * | 2015-09-03 | 2017-03-09 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
| KR102443370B1 (ko) * | 2015-11-20 | 2022-09-15 | 동우 화인켐 주식회사 | 실리콘 질화막 식각액 조성물 |
| WO2017095022A1 (ko) | 2015-12-04 | 2017-06-08 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| KR102545804B1 (ko) * | 2015-12-04 | 2023-06-20 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| US10515820B2 (en) | 2016-03-30 | 2019-12-24 | Tokyo Electron Limited | Process and apparatus for processing a nitride structure without silica deposition |
| CN107345137A (zh) * | 2016-05-04 | 2017-11-14 | Oci有限公司 | 能够抑制颗粒出现的蚀刻溶液 |
| US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
| KR102424391B1 (ko) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| KR102240647B1 (ko) * | 2017-03-28 | 2021-04-15 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
| KR101828437B1 (ko) | 2017-04-06 | 2018-03-29 | 주식회사 디엔에스 | 실리콘 질화막 식각용 조성물. |
| KR102258316B1 (ko) * | 2018-06-25 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
| KR20240013860A (ko) * | 2018-11-15 | 2024-01-30 | 엔테그리스, 아이엔씨. | 질화규소 에칭 조성물 및 방법 |
-
2019
- 2019-11-12 KR KR1020247002231A patent/KR20240013860A/ko active Pending
- 2019-11-12 KR KR1020217014303A patent/KR102628802B1/ko active Active
- 2019-11-12 SG SG11202103910PA patent/SG11202103910PA/en unknown
- 2019-11-12 US US16/681,449 patent/US11053440B2/en active Active
- 2019-11-12 JP JP2021526685A patent/JP7438211B2/ja active Active
- 2019-11-12 WO PCT/US2019/060974 patent/WO2020102228A1/en not_active Ceased
- 2019-11-12 CN CN201980073936.8A patent/CN112996881A/zh active Pending
- 2019-11-15 TW TW112106253A patent/TWI878801B/zh active
- 2019-11-15 TW TW108141573A patent/TWI797396B/zh active
-
2021
- 2021-06-07 US US17/341,138 patent/US11697767B2/en active Active
-
2023
- 2023-05-11 JP JP2023078794A patent/JP7583105B2/ja active Active
- 2023-05-24 US US18/201,363 patent/US20230295502A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022507589A (ja) | 2022-01-18 |
| TW202026403A (zh) | 2020-07-16 |
| JP2023109854A (ja) | 2023-08-08 |
| KR20210066007A (ko) | 2021-06-04 |
| JP7438211B2 (ja) | 2024-02-26 |
| US20200157423A1 (en) | 2020-05-21 |
| US20230295502A1 (en) | 2023-09-21 |
| CN112996881A (zh) | 2021-06-18 |
| JP7583105B2 (ja) | 2024-11-13 |
| TWI878801B (zh) | 2025-04-01 |
| TWI797396B (zh) | 2023-04-01 |
| SG11202103910PA (en) | 2021-05-28 |
| US11053440B2 (en) | 2021-07-06 |
| TW202325824A (zh) | 2023-07-01 |
| US11697767B2 (en) | 2023-07-11 |
| US20210296136A1 (en) | 2021-09-23 |
| KR102628802B1 (ko) | 2024-01-24 |
| WO2020102228A1 (en) | 2020-05-22 |
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