JP2022507589A - 窒化ケイ素エッチング組成物及び方法 - Google Patents
窒化ケイ素エッチング組成物及び方法 Download PDFInfo
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- JP2022507589A JP2022507589A JP2021526685A JP2021526685A JP2022507589A JP 2022507589 A JP2022507589 A JP 2022507589A JP 2021526685 A JP2021526685 A JP 2021526685A JP 2021526685 A JP2021526685 A JP 2021526685A JP 2022507589 A JP2022507589 A JP 2022507589A
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- silicon nitride
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- 239000000203 mixture Substances 0.000 title claims abstract description 150
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 69
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims description 42
- 238000005530 etching Methods 0.000 title abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 66
- 238000004377 microelectronic Methods 0.000 claims abstract description 33
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 76
- -1 hexafluorosilicic acid Chemical compound 0.000 claims description 48
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 20
- 150000002222 fluorine compounds Chemical class 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 11
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- 229940074371 monofluorophosphate Drugs 0.000 claims description 9
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- JTXUAHIMULPXKY-UHFFFAOYSA-N 3-trihydroxysilylpropan-1-amine Chemical compound NCCC[Si](O)(O)O JTXUAHIMULPXKY-UHFFFAOYSA-N 0.000 claims description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 claims description 5
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- QNHNSPNFZFBEQR-UHFFFAOYSA-N n'-(3-trihydroxysilylpropyl)ethane-1,2-diamine Chemical compound NCCNCCC[Si](O)(O)O QNHNSPNFZFBEQR-UHFFFAOYSA-N 0.000 claims description 5
- AMVXVPUHCLLJRE-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)hexane-1,6-diamine Chemical compound CO[Si](OC)(OC)CCCNCCCCCCN AMVXVPUHCLLJRE-UHFFFAOYSA-N 0.000 claims description 5
- NHBRUUFBSBSTHM-UHFFFAOYSA-N n'-[2-(3-trimethoxysilylpropylamino)ethyl]ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCNCCN NHBRUUFBSBSTHM-UHFFFAOYSA-N 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 4
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 claims description 3
- GLISOBUNKGBQCL-UHFFFAOYSA-N 3-[ethoxy(dimethyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(C)CCCN GLISOBUNKGBQCL-UHFFFAOYSA-N 0.000 claims description 3
- MYYHQYQIMDUNNW-UHFFFAOYSA-N 3-[fluoro(dimethyl)silyl]propan-1-amine Chemical compound C[Si](C)(F)CCCN MYYHQYQIMDUNNW-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011698 potassium fluoride Substances 0.000 claims description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 3
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- INJVFBCDVXYHGQ-UHFFFAOYSA-N n'-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCN INJVFBCDVXYHGQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000003270 potassium fluoride Nutrition 0.000 claims description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-M dihydrogenphosphate Chemical compound OP(O)([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-M 0.000 claims 2
- MZWXWSVCNSPBLH-UHFFFAOYSA-N 3-(3-aminopropyl-methoxy-methylsilyl)oxypropan-1-amine Chemical compound NCCC[Si](C)(OC)OCCCN MZWXWSVCNSPBLH-UHFFFAOYSA-N 0.000 claims 1
- 150000004756 silanes Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 58
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 229910021332 silicide Inorganic materials 0.000 abstract description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 10
- 229920005591 polysilicon Polymers 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910019142 PO4 Inorganic materials 0.000 description 12
- 235000021317 phosphate Nutrition 0.000 description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000009472 formulation Methods 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 241000894007 species Species 0.000 description 10
- 239000007787 solid Substances 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 8
- 239000010452 phosphate Substances 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- QFZXKNJGYJCGPP-UHFFFAOYSA-N 3-[[3-aminopropyl(diethoxy)silyl]oxy-diethoxysilyl]propan-1-amine Chemical compound NCCC[Si](OCC)(OCC)O[Si](CCCN)(OCC)OCC QFZXKNJGYJCGPP-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 125000004103 aminoalkyl group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052914 metal silicate Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- APSPVJKFJYTCTN-UHFFFAOYSA-N tetramethylazanium;silicate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.[O-][Si]([O-])([O-])[O-] APSPVJKFJYTCTN-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 2
- WXUAQHNMJWJLTG-UHFFFAOYSA-N 2-methylbutanedioic acid Chemical compound OC(=O)C(C)CC(O)=O WXUAQHNMJWJLTG-UHFFFAOYSA-N 0.000 description 2
- CMNVPGMSJAEGMN-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethoxy)silyl]oxy-dimethoxysilyl]propan-1-amine Chemical compound NCCC[Si](OC)(OC)O[Si](CCCN)(OC)OC CMNVPGMSJAEGMN-UHFFFAOYSA-N 0.000 description 2
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
(a)リン酸と、
(b)(i)アルキルアミノアルコキシシラン及び(ii)アルキルアミノヒドロキシルシランから選択される少なくとも1つのシランであって、アルコキシ、ヒドロキシル及びフルオロから選択される少なくとも1つの部分を有する、少なくとも1つのシランと、
(c)水を含む溶媒と、任意選択で、
(d)ヘキサフルオロケイ酸以外である、フッ素化合物と、
を含む組成物を提供する。
(式中、各Xは、フッ素、C1~C8アルキル基、又は式-ORの基から独立して選択され、式中、Rは水素又はC1~C8アルキル基であり、nは1~6の整数であり、各R1は、水素、C1~C8アルキル基、又は式C1~C8アルコキシ(CH2)n--から独立して選択される)
により表される。
(式中、各Xは、フッ素、C1~C8アルキル基、又は式-ORの基から独立して選択され、式中、Rは水素又はC1~C8アルキル基であり、nは1~6の整数であり、yは1~6の整数であり、zは1~6の整数である)
により表される。
である。
である。
、及びそのメトキシ類似体、すなわち1,3-ビス(3-アミノプロピル)-1,1,3,3-テトラメトキシジシロキサン(CAS番号76712-65-7)
である。
Claims (20)
- (a)リン酸と、
(b)(i)アルキルアミノアルコキシシラン及び(ii)アルキルアミノヒドロキシルシランから選択される少なくとも1つのシランであって、アルコキシ、ヒドロキシル及びフルオロから選択される少なくとも1つの部分を有する、少なくとも1つのシランと、
(c)水を含む溶媒と、任意選択で、
(d)ヘキサフルオロケイ酸以外である、フッ素化合物と、
を含む、組成物。 - リン酸が、組成物の総重量に基づいて50~95重量パーセントの範囲に存在する、請求項1に記載の組成物。
- フッ素化合物が存在し、HF及びモノフルオロリン酸から選択される、請求項1に記載の組成物。
- フッ素化合物が、フッ化セシウム及びフッ化カリウムから選択される、請求項3に記載の組成物。
- フッ素化合物が存在し、フルオロホウ酸、テトラメチルアンモニウムヘキサフルオロホスファート、フッ化アンモニウム、二フッ化アンモニウム、式NR’4BF4及びPR’4BF4をそれぞれ有する第四級アンモニウムテトラフルオロボラート及び第四級ホスホニウムテトラフルオロボラート(式中、R’は互いに同じであっても異なっていてもよく、水素、直鎖、分岐又は環状C1~C6アルキル、及び直鎖又は分岐C6~C10アリールから選択される)、テトラブチルアンモニウムテトラフルオロボラート(TBA-BF4)、並びにそれらの組み合わせから選択される、請求項1に記載の組成物。
- Rがメチル又はエチルである、請求項6に記載の組成物。
- アルキルアミノアルコキシシラン及びアルキルアミノヒドロキシルシラン化合物が、(3-アミノプロピル)トリエトキシシラン、(3-アミノプロピル)シラン-トリオール、3-アミノプロピルジメチルエトキシシラン、3-アミノプロピルメチルジエトキシシラン、N-(2-アミノエチル)-3-アミノプロピルメチルジメトキシシラン、(N,N-ジメチル-3-アンノプロピル)トリメトキシシラン、及び3-アミノプロピルジメチルフルオロシランから選択される、請求項6に記載の組成物。
- 第一級、第二級又は第三級C1~C6アルキルアミン又はそれらのリン酸二水素塩をさらに含む、請求項1に記載の組成物。
- Rがメチル又はエチルである、請求項10に記載の組成物。
- シランが、N-(3-トリメトキシシリルプロピル)ジエチレントリアミン、N-(2-アミノエチル)-3-アミノプロピルトリエトキシシラン、N-(2-アミノエチル)-3-アミノプロピル-シラントリオール、(3-トリメトキシシリルプロピル)デチレントリアミン、及びN-(6-アミノヘキシル)アミノプロピルトリメトキシシランから選択される、請求項10に記載の組成物。
- 第一級、第二級又は第三級C1~C6アルキルアミン又はそれらのリン酸二水素塩をさらに含む、請求項10に記載の組成物。
- (a)リン酸と、
(b)N-(2-アミノエチル)-3-アミノプロピル-シラン-トリオール又は(3-アミノプロピル)シラントリオールと、
(c)水を含む溶媒と、
を含む、組成物。 - HF又はモノフルオロリン酸をさらに含む、請求項14に記載の組成物。
- トリエチルアミン又はそのリン酸二水素塩をさらに含む、請求項14に記載の組成物。
- マイクロ電子デバイスから窒化ケイ素を除去する方法であって、マイクロ電子デバイスから前記窒化ケイ素材料を少なくとも部分的に除去するのに十分な条件下で十分な時間、マイクロ電子デバイスを請求項1に記載の組成物と接触させることを含む、方法。
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KR20210066007A (ko) | 2021-06-04 |
WO2020102228A1 (en) | 2020-05-22 |
KR20240013860A (ko) | 2024-01-30 |
JP7438211B2 (ja) | 2024-02-26 |
US20200157423A1 (en) | 2020-05-21 |
SG11202103910PA (en) | 2021-05-28 |
US20230295502A1 (en) | 2023-09-21 |
CN112996881A (zh) | 2021-06-18 |
KR102628802B1 (ko) | 2024-01-24 |
US11697767B2 (en) | 2023-07-11 |
TW202325824A (zh) | 2023-07-01 |
TW202026403A (zh) | 2020-07-16 |
TWI797396B (zh) | 2023-04-01 |
JP2023109854A (ja) | 2023-08-08 |
US11053440B2 (en) | 2021-07-06 |
US20210296136A1 (en) | 2021-09-23 |
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