JP2019204954A - エッチング液組成物、絶縁膜のエッチング方法、半導体素子の製造方法及びシラン化合物 - Google Patents
エッチング液組成物、絶縁膜のエッチング方法、半導体素子の製造方法及びシラン化合物 Download PDFInfo
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- JP2019204954A JP2019204954A JP2019097424A JP2019097424A JP2019204954A JP 2019204954 A JP2019204954 A JP 2019204954A JP 2019097424 A JP2019097424 A JP 2019097424A JP 2019097424 A JP2019097424 A JP 2019097424A JP 2019204954 A JP2019204954 A JP 2019204954A
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- 150000002431 hydrogen Chemical class 0.000 claims description 19
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/547—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom
- C07F9/6596—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom having atoms other than oxygen, sulfur, selenium, tellurium, nitrogen or phosphorus as ring hetero atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
シラン化合物A
100mlの丸底フラスコにトリエタノールアミン14.9gとアミノプロピルトリエトキシシラン23.4mlを入れた後、130℃に昇温して2時間攪拌した。
シラン化合物B
100mlの丸底フラスコにトリエタノールアミン14.9gとメチルトリエトキシシラン20.0mlを入れた後、130℃に昇温して2時間攪拌した。
シラン化合物C
100mlの丸底フラスコにトリエタノールアミン14.9gと1−[3−(トリメトキシシリル)プロピル]尿素9.7ml、トルエン20mlを入れた後、110℃に昇温して2時間攪拌した。
シラン化合物D
100mlの丸底フラスコにトリエタノールアミン9.5gとトリメトキシフェニルシラン12.5g及びトルエン50mlを入れた後、110℃に昇温して2時間攪拌した。
シラン化合物E
100mlの丸底フラスコにトリエタノールアミン15.0gとビス[3−(トリメトキシシリル)プロピル]アミン117.1g、トルエン50ml、水酸化カリウム0.01gを入れた後、120℃に昇温して2時間攪拌した。
シラン化合物F
100mlの丸底フラスコにトリエタノールアミン5.9gとビス(トリメトキシシリル)エタン5.3g、トルエン50ml、水酸化カリウム0.01gを入れた後、120℃に昇温して2時間攪拌した。
シラン化合物G
100mlの丸底フラスコに1−[ビス(2−ヒドロキシエチル)アミノ]−3−クロロ−2−プロパノール19.7gとエチルトリメトキシシラン15g、トルエン50ml、水酸化カリウム0.01gを入れた後、120℃に昇温して2時間攪拌した。
シラン化合物H
100mlの丸底フラスコに3−[ビス(2−ヒドロキシエチル)アミノ]1,1,1−トリフルオロ−2−プロパノール21.7gとメチルトリメトキシシラン13.6g、トルエン50ml、水酸化カリウム0.01gを入れた後、120℃に昇温して2時間攪拌した。
シラン化合物I
100mlの丸底フラスコにa−[[ビス(2−ヒドロキシエチル)アミノ]メチル]ベンゼンメタノール22.5gとエチルトリメトキシシラン15g、トルエン50ml、水酸化カリウム0.01gを入れた後、120℃に昇温して2時間攪拌した。
シラン化合物J
100mlの丸底フラスコに1−エテニル−2,8,9−トリオキサ−5−アザ−1−シラビシクロ[3,3,3]ウンデカン2.0gとシアン化カリウム6.5g、DMF20ml、アセトニトリル20mlを入れた後、常温で24時間攪拌した。
シラン化合物K
100mlの丸底フラスコにN,N−ビス(2−ヒドロキシエチル)−L−セリン19.3gとメチルトリメトキシシラン13.6g、トルエン50mlを入れた後、120℃に昇温して48時間攪拌した。
85%リン酸に合成例1〜11で得られた各シラン化合物A〜Kを表1に示したような含量で100重量%になるように添加混合してエッチング液(実施例1〜11)を製造した。
85%リン酸に合成例5で得られたシラン化合物Eを表1に示したような含量で100重量%になるように添加混合してエッチング液(実施例12)を製造した。
Claims (22)
- 前記C1−C20の置換又は非置換されたヒドロカルビル基は置換又は非置換されたC1−C20のアルキル基、又は置換又は非置換されたC6−C20のアリール基である、請求項1に記載のエッチング液組成物。
- 前記置換されたC1−C20のヒドロカルビル基はハロゲンで置換されたものである、請求項2に記載のエッチング液組成物。
- Aはヒドロカルビル、ヒドロカルビレン、結合部位がNであるラジカル、結合部位がSであるラジカル又は結合部位がPであるラジカルである、請求項1〜3のいずれか一項に記載のエッチング液組成物。
- 前記ヒドロカルビルはC1−C20アルキル、C2−C20アルケニル又はC6−C20アリールである、請求項4に記載のエッチング液組成物。
- nは1であり;
Lは直接結合又はC1−C3アルキレンであり、
Aは置換又は非置換されたC1−C20アルキル、置換又は非置換されたC1−C20アルケニル、*−NH2、*−NH−(CH2)l−NH2、*−NH−CO−NH2、又は*−(CH2)m−C6H5であり;
l又はmは独立して0〜10の整数である、請求項1に記載のエッチング液組成物。 - 前記R1〜R6は水素である、請求項1〜12のいずれか一項に記載のエッチング液組成物。
- 前記R1は置換又は非置換されたヒドロカルビルであり、R2〜R6は水素である、請求項1〜12のいずれか一項に記載のエッチング液組成物。
- 前記シラン化合物をエッチング液組成物の全重量に対して0.001〜1重量%含む、請求項1〜15のいずれか一項に記載のエッチング液組成物。
- アンモニウム塩をさらに含む、請求項1〜17のいずれか一項に記載のエッチング液組成物。
- 請求項1〜18のいずれか一項に記載のエッチング液組成物を利用した絶縁膜のエッチング方法。
- 請求項19に記載の絶縁膜のエッチング方法を含む半導体素子の製造方法。
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