JP2022514341A5 - - Google Patents
Info
- Publication number
- JP2022514341A5 JP2022514341A5 JP2021535536A JP2021535536A JP2022514341A5 JP 2022514341 A5 JP2022514341 A5 JP 2022514341A5 JP 2021535536 A JP2021535536 A JP 2021535536A JP 2021535536 A JP2021535536 A JP 2021535536A JP 2022514341 A5 JP2022514341 A5 JP 2022514341A5
- Authority
- JP
- Japan
- Prior art keywords
- data
- memory
- array
- commands
- read
- Prior art date
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862783388P | 2018-12-21 | 2018-12-21 | |
| US62/783,388 | 2018-12-21 | ||
| PCT/US2019/067832 WO2020132430A1 (en) | 2018-12-21 | 2019-12-20 | Page policies for signal development caching in a memory device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022514341A JP2022514341A (ja) | 2022-02-10 |
| JP2022514341A5 true JP2022514341A5 (https=) | 2022-10-13 |
| JPWO2020132430A5 JPWO2020132430A5 (https=) | 2022-10-13 |
Family
ID=71097667
Family Applications (9)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021533432A Pending JP2022511972A (ja) | 2018-12-21 | 2019-12-05 | メモリデバイスにおける多重化信号展開 |
| JP2021533238A Pending JP2022511949A (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスにおける信号展開キャッシングのための内容参照メモリ |
| JP2021535529A Active JP7105376B2 (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスにおける信号展開キャッシング |
| JP2021535536A Pending JP2022514341A (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスにおける信号展開キャッシングのページポリシー |
| JP2021535534A Pending JP2022514073A (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスと関連付けられたブロードキャスト書き込み動作 |
| JP2021535540A Active JP7165269B2 (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスにおける信号展開キャッシング |
| JP2021535559A Active JP7175398B2 (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスと関連付けられた読み取りブロードキャスト動作 |
| JP2022147490A Pending JP2022168310A (ja) | 2018-12-21 | 2022-09-16 | メモリデバイスと関連付けられた読み取りブロードキャスト動作 |
| JP2022168730A Pending JP2022183340A (ja) | 2018-12-21 | 2022-10-21 | メモリデバイスにおける信号展開キャッシング |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021533432A Pending JP2022511972A (ja) | 2018-12-21 | 2019-12-05 | メモリデバイスにおける多重化信号展開 |
| JP2021533238A Pending JP2022511949A (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスにおける信号展開キャッシングのための内容参照メモリ |
| JP2021535529A Active JP7105376B2 (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスにおける信号展開キャッシング |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021535534A Pending JP2022514073A (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスと関連付けられたブロードキャスト書き込み動作 |
| JP2021535540A Active JP7165269B2 (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスにおける信号展開キャッシング |
| JP2021535559A Active JP7175398B2 (ja) | 2018-12-21 | 2019-12-20 | メモリデバイスと関連付けられた読み取りブロードキャスト動作 |
| JP2022147490A Pending JP2022168310A (ja) | 2018-12-21 | 2022-09-16 | メモリデバイスと関連付けられた読み取りブロードキャスト動作 |
| JP2022168730A Pending JP2022183340A (ja) | 2018-12-21 | 2022-10-21 | メモリデバイスにおける信号展開キャッシング |
Country Status (6)
| Country | Link |
|---|---|
| US (19) | US11360704B2 (https=) |
| EP (7) | EP3899944A4 (https=) |
| JP (9) | JP2022511972A (https=) |
| CN (11) | CN113243031B (https=) |
| TW (2) | TW202230141A (https=) |
| WO (7) | WO2020131395A1 (https=) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10235176B2 (en) | 2015-12-17 | 2019-03-19 | The Charles Stark Draper Laboratory, Inc. | Techniques for metadata processing |
| TW201937393A (zh) | 2018-02-02 | 2019-09-16 | 美商多佛微系統公司 | 用於安全初始化的策略編輯之系統和方法 |
| SG11202007272QA (en) | 2018-02-02 | 2020-08-28 | Charles Stark Draper Laboratory Inc | Systems and methods for policy execution processing |
| EP3746922B1 (en) | 2018-02-02 | 2024-06-05 | Dover Microsystems, Inc. | Systems and methods for transforming instructions for metadata processing |
| EP3788488A1 (en) | 2018-04-30 | 2021-03-10 | Dover Microsystems, Inc. | Systems and methods for checking safety properties |
| EP3877874A1 (en) | 2018-11-06 | 2021-09-15 | Dover Microsystems, Inc. | Systems and methods for stalling host processor |
| EP3881190A1 (en) | 2018-11-12 | 2021-09-22 | Dover Microsystems, Inc. | Systems and methods for metadata encoding |
| WO2020132012A1 (en) | 2018-12-18 | 2020-06-25 | Dover Microsystems, Inc. | Systems and methods for data lifecycle protection |
| US11360704B2 (en) | 2018-12-21 | 2022-06-14 | Micron Technology, Inc. | Multiplexed signal development in a memory device |
| EP3912061A1 (en) | 2019-01-18 | 2021-11-24 | Dover Microsystems, Inc. | Systems and methods for metadata classification |
| US11062763B2 (en) * | 2019-04-09 | 2021-07-13 | Micron Technology, Inc. | Memory array with multiplexed digit lines |
| US11176065B2 (en) * | 2019-08-12 | 2021-11-16 | Micron Technology, Inc. | Extended memory interface |
| US11842169B1 (en) | 2019-09-25 | 2023-12-12 | Amazon Technologies, Inc. | Systolic multiply delayed accumulate processor architecture |
| WO2021076871A1 (en) | 2019-10-18 | 2021-04-22 | Dover Microsystems, Inc. | Systems and methods for updating metadata |
| US11816446B2 (en) | 2019-11-27 | 2023-11-14 | Amazon Technologies, Inc. | Systolic array component combining multiple integer and floating-point data types |
| US11467806B2 (en) | 2019-11-27 | 2022-10-11 | Amazon Technologies, Inc. | Systolic array including fused multiply accumulate with efficient prenormalization and extended dynamic range |
| US12253944B2 (en) | 2020-03-03 | 2025-03-18 | Dover Microsystems, Inc. | Systems and methods for caching metadata |
| JP2021140842A (ja) * | 2020-03-04 | 2021-09-16 | キオクシア株式会社 | メモリ回路、情報処理回路、及び情報処理装置 |
| US11308027B1 (en) | 2020-06-29 | 2022-04-19 | Amazon Technologies, Inc. | Multiple accumulate busses in a systolic array |
| US11232062B1 (en) | 2020-06-29 | 2022-01-25 | Amazon Technologies, Inc. | Parallelism within a systolic array using multiple accumulate busses |
| US11113233B1 (en) * | 2020-06-29 | 2021-09-07 | Amazon Technologies, Inc. | Multiple busses in a grouped systolic array |
| US11422773B1 (en) | 2020-06-29 | 2022-08-23 | Amazon Technologies, Inc. | Multiple busses within a systolic array processing element |
| KR102342994B1 (ko) * | 2020-07-21 | 2021-12-24 | 고려대학교 산학협력단 | 산술 연산을 지원하는 인메모리 컴퓨팅 |
| WO2022064315A1 (ja) * | 2020-09-25 | 2022-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US12124576B2 (en) | 2020-12-23 | 2024-10-22 | Dover Microsystems, Inc. | Systems and methods for policy violation processing |
| US11907556B2 (en) * | 2021-02-18 | 2024-02-20 | Micron Technology, Inc. | Data relocation operation techniques |
| US12423058B2 (en) | 2021-06-30 | 2025-09-23 | Amazon Technologies, Inc. | Systolic array with input reduction to multiple reduced inputs |
| US11880682B2 (en) | 2021-06-30 | 2024-01-23 | Amazon Technologies, Inc. | Systolic array with efficient input reduction and extended array performance |
| US11727981B2 (en) * | 2021-07-07 | 2023-08-15 | Micron Technology, Inc. | Sense amplifier with digit line multiplexing |
| US11837269B2 (en) * | 2021-08-31 | 2023-12-05 | Micron Technology, Inc. | Deck-level signal development cascodes |
| CN113641626B (zh) * | 2021-10-18 | 2022-02-18 | 睿思芯科(深圳)技术有限公司 | 一种sram读写控制方法及行缓冲控制器 |
| US20230214323A1 (en) * | 2021-12-30 | 2023-07-06 | Micron Technology, Inc. | Selectable cache writing policies for cache management |
| CN116417027A (zh) * | 2021-12-31 | 2023-07-11 | 长鑫存储技术有限公司 | 一种控制放大方法及电路、灵敏放大器和半导体存储器 |
| US12142342B2 (en) | 2022-02-21 | 2024-11-12 | Industrial Technology Research Institute | Memory circuit with sense amplifier calibration mechanism |
| US12517700B1 (en) | 2022-03-30 | 2026-01-06 | Amazon Technologies, Inc. | Systolic array with output rounding for multiple source/destination data type pairs |
| US11967396B2 (en) | 2022-04-27 | 2024-04-23 | Nvidia Corp. | Multi-rank receiver |
| US11973501B2 (en) | 2022-04-27 | 2024-04-30 | Nvidia Corp. | Digitally controlled unified receiver for multi-rank system |
| US11881255B2 (en) * | 2022-04-27 | 2024-01-23 | Nvidia Corp. | Look ahead switching circuit for a multi-rank system |
| US12354642B2 (en) | 2022-04-27 | 2025-07-08 | Nvidia Corp. | Training and configuration of reference voltage generators in a multi-rank circuit system |
| US11978496B2 (en) | 2022-04-27 | 2024-05-07 | Nvidia Corp. | Distributed global and local reference voltage generation |
| US12236125B2 (en) * | 2022-04-28 | 2025-02-25 | Micron Technology, Inc. | Performance monitoring for a memory system |
| US12216917B2 (en) * | 2022-05-31 | 2025-02-04 | Changxin Memory Technologies, Inc. | Data processing circuit and method, and semiconductor memory |
| JP2024002003A (ja) * | 2022-06-23 | 2024-01-11 | キオクシア株式会社 | メモリデバイス及びメモリシステム |
| US12204789B2 (en) * | 2022-08-29 | 2025-01-21 | Micron Technology, Inc. | Memory phase monitoring and scheduling system using memory usage statistics |
| WO2024054448A1 (en) * | 2022-09-10 | 2024-03-14 | Rambus Inc. | Split-entry dram cache |
| KR20240050918A (ko) * | 2022-10-12 | 2024-04-19 | 삼성전자주식회사 | 비휘발성 메모리 장치, 저장 장치, 스토리지 컨트롤러의 동작 방법, 및 저장 장치의 동작 방법 |
| US12608316B2 (en) * | 2023-01-31 | 2026-04-21 | Micron Technology, Inc. | Sense amplifiers as static random access memory cache |
| CN116149572B (zh) | 2023-02-24 | 2025-08-15 | 合肥兆芯电子有限公司 | 映射表更新方法、存储器存储装置及存储器控制电路单元 |
| US20240338150A1 (en) * | 2023-04-05 | 2024-10-10 | Mobileye Vision Technologies Ltd. | Apparatus, system, and method of data array transformation |
| TWI859088B (zh) * | 2024-03-12 | 2024-10-11 | 世界先進積體電路股份有限公司 | 故障防護電路 |
Family Cites Families (130)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4493026A (en) | 1982-05-26 | 1985-01-08 | International Business Machines Corporation | Set associative sector cache |
| JPH0793031B2 (ja) * | 1987-02-12 | 1995-10-09 | 株式会社日立製作所 | アクセス制御システム |
| JPH01166850A (ja) | 1987-12-24 | 1989-06-30 | Mitsubishi Heavy Ind Ltd | 銅又はアルミニウム合金鋳物の製造法 |
| JPH0315958A (ja) | 1989-06-14 | 1991-01-24 | Hitachi Ltd | キャッシュメモリシステム |
| JP2938511B2 (ja) | 1990-03-30 | 1999-08-23 | 三菱電機株式会社 | 半導体記憶装置 |
| JP2951786B2 (ja) | 1992-02-03 | 1999-09-20 | 三菱電機株式会社 | 半導体記憶装置 |
| US5341501A (en) | 1991-10-04 | 1994-08-23 | Bull Hn Information Systems Inc. | Processor bus access |
| US5377154A (en) | 1992-01-31 | 1994-12-27 | Oki Electric Industry Co., Ltd. | Multiple serial-access memory |
| JP3672940B2 (ja) | 1994-01-06 | 2005-07-20 | 沖電気工業株式会社 | 半導体記憶装置 |
| US5596521A (en) | 1994-01-06 | 1997-01-21 | Oki Electric Industry Co., Ltd. | Semiconductor memory with built-in cache |
| JP3085843B2 (ja) | 1994-01-11 | 2000-09-11 | 沖電気工業株式会社 | 半導体記憶回路 |
| US6320778B1 (en) * | 1994-01-06 | 2001-11-20 | Oki Electric Industry Co., Ltd. | Semiconductor memory with built-in cache |
| JP3181479B2 (ja) | 1994-12-15 | 2001-07-03 | 沖電気工業株式会社 | 半導体記憶装置 |
| US5787267A (en) | 1995-06-07 | 1998-07-28 | Monolithic System Technology, Inc. | Caching method and circuit for a memory system with circuit module architecture |
| JP3352577B2 (ja) | 1995-12-21 | 2002-12-03 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 記憶装置 |
| JP4008072B2 (ja) * | 1997-08-21 | 2007-11-14 | 富士通株式会社 | 半導体記憶装置 |
| JPH1173763A (ja) * | 1997-08-28 | 1999-03-16 | Toshiba Corp | 半導体集積回路装置 |
| JP3161384B2 (ja) | 1997-09-16 | 2001-04-25 | 日本電気株式会社 | 半導体記憶装置とそのアクセス方法 |
| US6205076B1 (en) | 1998-03-27 | 2001-03-20 | Fujitsu Limited | Destructive read type memory circuit, restoring circuit for the same and sense amplifier |
| JPH11339466A (ja) | 1998-03-27 | 1999-12-10 | Fujitsu Ltd | 破壊読出型メモリ回路、リストア用アドレス記憶・制御回路及びセンスアンプ |
| JP2954178B1 (ja) | 1998-06-26 | 1999-09-27 | 甲府日本電気株式会社 | 可変式キャッシュ方式 |
| JP2001006379A (ja) | 1999-06-16 | 2001-01-12 | Fujitsu Ltd | 複写、移動機能を有するフラッシュメモリ |
| JP2001005725A (ja) | 1999-06-21 | 2001-01-12 | Hitachi Ltd | キャッシュ記憶装置 |
| KR100373849B1 (ko) | 2000-03-13 | 2003-02-26 | 삼성전자주식회사 | 어소시어티브 캐시 메모리 |
| US6587384B2 (en) | 2001-04-21 | 2003-07-01 | Hewlett-Packard Development Company, L.P. | Multi-function serial I/O circuit |
| US6829682B2 (en) | 2001-04-26 | 2004-12-07 | International Business Machines Corporation | Destructive read architecture for dynamic random access memories |
| US6552944B2 (en) | 2001-05-31 | 2003-04-22 | International Business Machines Corporation | Single bitline direct sensing architecture for high speed memory device |
| KR100387529B1 (ko) | 2001-06-11 | 2003-06-18 | 삼성전자주식회사 | 랜덤 억세스 가능한 메모리 셀 어레이를 갖는 불휘발성반도체 메모리 장치 |
| US6480424B1 (en) * | 2001-07-12 | 2002-11-12 | Broadcom Corporation | Compact analog-multiplexed global sense amplifier for RAMS |
| US6614691B2 (en) | 2001-12-12 | 2003-09-02 | Micron Technology, Inc. | Flash memory having separate read and write paths |
| US20040230288A1 (en) | 2002-04-17 | 2004-11-18 | Rosenthal Arthur L. | Medical devices adapted for controlled in vivo structural change after implantation |
| CN1480950A (zh) | 2002-09-05 | 2004-03-10 | 力旺电子股份有限公司 | 即时多路复用且可快速复制数据的闪速存储器装置 |
| US6940753B2 (en) | 2002-09-24 | 2005-09-06 | Sandisk Corporation | Highly compact non-volatile memory and method therefor with space-efficient data registers |
| JP4439838B2 (ja) | 2003-05-26 | 2010-03-24 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置及びその制御方法 |
| US6999370B2 (en) | 2003-08-06 | 2006-02-14 | International Business Machines Corporation | Low power circuits with small voltage swing transmission, voltage regeneration, and wide bandwidth architecture |
| JP4107269B2 (ja) | 2004-02-23 | 2008-06-25 | ソニー株式会社 | 固体撮像装置 |
| US7009880B1 (en) * | 2004-08-17 | 2006-03-07 | Programmable Microelectronics Corporation | Non-volatile memory architecture to improve read performance |
| US7085190B2 (en) | 2004-09-16 | 2006-08-01 | Stmicroelectronics, Inc. | Variable boost voltage row driver circuit and method, and memory device and system including same |
| JP4956922B2 (ja) | 2004-10-27 | 2012-06-20 | ソニー株式会社 | 記憶装置 |
| KR100640594B1 (ko) | 2004-10-27 | 2006-11-01 | 삼성전자주식회사 | 데이터 스트로브 신호를 모니터링하여 적응적으로 데이터입출력 신호를 래치하는 인터페이스 회로 및 이를구비하는 메모리 시스템 |
| US7216272B2 (en) | 2005-02-23 | 2007-05-08 | Texas Instruments Incorporated | Method for reducing SRAM test time by applying power-up state knowledge |
| JP5005179B2 (ja) | 2005-03-23 | 2012-08-22 | ソニー株式会社 | 固体撮像装置 |
| US7206230B2 (en) | 2005-04-01 | 2007-04-17 | Sandisk Corporation | Use of data latches in cache operations of non-volatile memories |
| JP4756581B2 (ja) | 2005-07-21 | 2011-08-24 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| US20070083783A1 (en) | 2005-08-05 | 2007-04-12 | Toru Ishihara | Reducing power consumption at a cache |
| JP2007080325A (ja) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US7286425B2 (en) | 2005-10-31 | 2007-10-23 | International Business Machines Corporation | System and method for capacitive mis-match bit-line sensing |
| KR20070066185A (ko) | 2005-12-21 | 2007-06-27 | 삼성전자주식회사 | 데이터 라인을 공유하는 반도체 메모리 장치의 병렬 비트테스트 회로 |
| US7647536B2 (en) * | 2005-12-30 | 2010-01-12 | Intel Corporation | Repair bits for a low voltage cache |
| US7516275B2 (en) * | 2006-04-25 | 2009-04-07 | International Business Machines Corporation | Pseudo-LRU virtual counter for a locking cache |
| JP4299848B2 (ja) | 2006-08-09 | 2009-07-22 | エルピーダメモリ株式会社 | 半導体記憶装置 |
| US20080080266A1 (en) | 2006-09-27 | 2008-04-03 | Khellah Muhammad M | Memory driver circuits with embedded level shifters |
| CN101558391B (zh) * | 2006-12-15 | 2013-10-16 | 密克罗奇普技术公司 | 用于微处理器的可配置高速缓冲存储器 |
| JP2008257773A (ja) | 2007-04-02 | 2008-10-23 | Toshiba Corp | 不揮発性半導体記憶装置、不揮発性半導体記憶装置の制御方法、不揮発性半導体記憶システム、及びメモリカード |
| US7613060B2 (en) | 2007-05-21 | 2009-11-03 | Micron Technology, Inc. | Methods, circuits, and systems to select memory regions |
| WO2009034603A1 (ja) | 2007-09-14 | 2009-03-19 | Fujitsu Microelectronics Limited | 半導体メモリ |
| JP2009123298A (ja) * | 2007-11-16 | 2009-06-04 | Renesas Technology Corp | 半導体集積回路装置 |
| US8090999B2 (en) | 2008-06-10 | 2012-01-03 | Micron Technology, Inc. | Memory media characterization for development of signal processors |
| US20140325129A1 (en) | 2008-12-31 | 2014-10-30 | Micron Technology, Inc. | Method and apparatus for active range mapping for a nonvolatile memory device |
| KR20100113389A (ko) | 2009-04-13 | 2010-10-21 | 주식회사 하이닉스반도체 | 라이트 동작을 제어하는 반도체 집적 회로 |
| US8495299B2 (en) | 2009-11-16 | 2013-07-23 | Microsoft Corporation | Non-blocking data transfer via memory cache manipulation |
| US20110149667A1 (en) | 2009-12-23 | 2011-06-23 | Fatih Hamzaoglu | Reduced area memory array by using sense amplifier as write driver |
| JP5374412B2 (ja) | 2010-02-24 | 2013-12-25 | ラピスセミコンダクタ株式会社 | 半導体記憶回路 |
| KR20110097438A (ko) * | 2010-02-25 | 2011-08-31 | 삼성전자주식회사 | 메모리 시스템, 그리고 그것의 동작 방법 |
| KR20110124992A (ko) | 2010-05-12 | 2011-11-18 | 삼성전자주식회사 | 반도체 메모리 장치 및 반도체 메모리 시스템 |
| US8760953B2 (en) | 2010-10-01 | 2014-06-24 | Qualcomm Incorporated | Sense amplifier with selectively powered inverter |
| KR101189011B1 (ko) * | 2010-10-26 | 2012-10-08 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| US8385140B2 (en) | 2010-11-18 | 2013-02-26 | Advanced Micro Devices, Inc. | Memory elements having shared selection signals |
| US20120151232A1 (en) | 2010-12-12 | 2012-06-14 | Fish Iii Russell Hamilton | CPU in Memory Cache Architecture |
| US8570827B2 (en) | 2010-12-20 | 2013-10-29 | Apple Inc. | Physical organization of memory to reduce power consumption |
| JP5443420B2 (ja) * | 2011-03-23 | 2014-03-19 | 株式会社東芝 | 半導体記憶装置 |
| JP2012203938A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 半導体記憶装置 |
| US8743630B2 (en) * | 2011-05-23 | 2014-06-03 | Infineon Technologies Ag | Current sense amplifier with replica bias scheme |
| US8645752B2 (en) | 2011-11-08 | 2014-02-04 | Micron Technology, Inc. | Apparatuses and methods for operating a memory device |
| US20130145097A1 (en) * | 2011-12-05 | 2013-06-06 | Qualcomm Incorporated | Selective Access of a Store Buffer Based on Cache State |
| US8873329B1 (en) | 2012-01-17 | 2014-10-28 | Rambus Inc. | Patterned memory page activation |
| JP2013196717A (ja) * | 2012-03-16 | 2013-09-30 | Toshiba Corp | 半導体記憶装置およびその駆動方法 |
| JP5978771B2 (ja) | 2012-05-31 | 2016-08-24 | ソニー株式会社 | 信号処理装置および方法、撮像素子、並びに、撮像装置 |
| US9257154B2 (en) | 2012-11-29 | 2016-02-09 | Micron Technology, Inc. | Methods and apparatuses for compensating for source voltage |
| US9013930B2 (en) | 2012-12-20 | 2015-04-21 | Winbond Electronics Corp. | Memory device with interleaved high-speed reading function and method thereof |
| KR20140080216A (ko) * | 2012-12-20 | 2014-06-30 | 에스케이하이닉스 주식회사 | 반도체 메모리 시스템 및 그의 동작 방법 |
| US9509317B2 (en) * | 2013-01-31 | 2016-11-29 | Oracle International Corporation | Rotational synchronizer circuit for metastablity resolution |
| US9093175B2 (en) | 2013-03-27 | 2015-07-28 | International Business Machines Corporation | Signal margin centering for single-ended eDRAM sense amplifier |
| US9443602B2 (en) | 2013-08-23 | 2016-09-13 | Kabushiki Kaisha Toshiba | Storage device and data latch timing adjustment method |
| CN110233978B (zh) | 2014-02-07 | 2022-03-11 | 拉姆伯斯公司 | 馈通补偿图像传感器 |
| US9384830B2 (en) | 2014-05-06 | 2016-07-05 | Micron Technology, Inc. | Apparatuses and methods for performing multiple memory operations |
| US9535844B1 (en) | 2014-06-30 | 2017-01-03 | EMC IP Holding Company LLC | Prioritization for cache systems |
| KR102309471B1 (ko) | 2014-12-19 | 2021-10-07 | 에스케이하이닉스 주식회사 | 데이터 처리 시스템 및 데이터 처리 시스템의 동작 방법 |
| CN107408405B (zh) | 2015-02-06 | 2021-03-05 | 美光科技公司 | 用于并行写入到多个存储器装置位置的设备及方法 |
| US9785211B2 (en) | 2015-02-13 | 2017-10-10 | Qualcomm Incorporated | Independent power collapse methodology |
| KR101994952B1 (ko) | 2015-03-27 | 2019-07-01 | 후아웨이 테크놀러지 컴퍼니 리미티드 | 데이터 처리 방법, 메모리 관리 유닛, 및 메모리 제어 장치 |
| US9582430B2 (en) | 2015-03-27 | 2017-02-28 | Intel Corporation | Asymmetric set combined cache |
| US9728243B2 (en) * | 2015-05-11 | 2017-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or electronic component including the same |
| US10073786B2 (en) * | 2015-05-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for compute enabled cache |
| US9627016B2 (en) | 2015-09-10 | 2017-04-18 | Cypress Semiconductor Corporation | Systems, methods, and devices for parallel read and write operations |
| KR102377453B1 (ko) | 2015-11-05 | 2022-03-23 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 동작 방법 |
| US10303372B2 (en) | 2015-12-01 | 2019-05-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and operation method thereof |
| US9734886B1 (en) | 2016-02-01 | 2017-08-15 | Micron Technology, Inc | Cell-based reference voltage generation |
| US9934837B2 (en) | 2016-03-01 | 2018-04-03 | Micron Technology, Inc. | Ground reference scheme for a memory cell |
| US9997232B2 (en) * | 2016-03-10 | 2018-06-12 | Micron Technology, Inc. | Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations |
| US10083731B2 (en) | 2016-03-11 | 2018-09-25 | Micron Technology, Inc | Memory cell sensing with storage component isolation |
| US9552864B1 (en) * | 2016-03-11 | 2017-01-24 | Micron Technology, Inc. | Offset compensation for ferroelectric memory cell sensing |
| US9761312B1 (en) * | 2016-03-16 | 2017-09-12 | Micron Technology, Inc. | FeRAM-DRAM hybrid memory |
| US9997250B2 (en) | 2016-03-17 | 2018-06-12 | SK Hynix Inc. | Non-volatile memory device with a plurality of cache latches and switches and method for operating non-volatile memory device |
| US10474581B2 (en) | 2016-03-25 | 2019-11-12 | Micron Technology, Inc. | Apparatuses and methods for cache operations |
| US9542980B1 (en) | 2016-03-29 | 2017-01-10 | Nanya Technology Corp. | Sense amplifier with mini-gap architecture and parallel interconnect |
| US10192606B2 (en) * | 2016-04-05 | 2019-01-29 | Micron Technology, Inc. | Charge extraction from ferroelectric memory cell using sense capacitors |
| KR102514045B1 (ko) * | 2016-04-21 | 2023-03-24 | 삼성전자주식회사 | 저항성 메모리 장치 및 이를 포함하는 메모리 시스템 |
| US10082964B2 (en) | 2016-04-27 | 2018-09-25 | Micron Technology, Inc | Data caching for ferroelectric memory |
| CN108701077B (zh) | 2016-05-03 | 2023-11-10 | 拉姆伯斯公司 | 具有高效写入操作的存储器组件 |
| TWI734781B (zh) * | 2016-05-20 | 2021-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、電子構件及電子裝置 |
| US10090027B2 (en) | 2016-05-25 | 2018-10-02 | Ememory Technology Inc. | Memory system with low read power |
| US10372566B2 (en) | 2016-09-16 | 2019-08-06 | Micron Technology, Inc. | Storing memory array operational information in nonvolatile subarrays |
| KR102662026B1 (ko) * | 2016-09-30 | 2024-05-03 | 삼성전자주식회사 | 트립 전압의 변화를 보상하는 메모리 장치 및 그것의 읽기 방법 |
| US10249351B2 (en) | 2016-11-06 | 2019-04-02 | Intel Corporation | Memory device with flexible internal data write control circuitry |
| US10503649B2 (en) * | 2016-11-28 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit and address mapping method for cache memory |
| US10490239B2 (en) | 2016-12-27 | 2019-11-26 | Intel Corporation | Programmable data pattern for repeated writes to memory |
| US10290341B2 (en) * | 2017-02-24 | 2019-05-14 | Micron Technology, Inc. | Self-reference for ferroelectric memory |
| WO2018163252A1 (ja) | 2017-03-06 | 2018-09-13 | ゼンテルジャパン株式会社 | 半導体記憶システム |
| JP6943600B2 (ja) * | 2017-04-18 | 2021-10-06 | ラピスセミコンダクタ株式会社 | 半導体記憶装置および半導体記憶装置の読み出し方法 |
| US10650899B2 (en) | 2017-04-27 | 2020-05-12 | Everspin Technologies, Inc. | Delayed write-back in memory with calibration support |
| US10789175B2 (en) | 2017-06-01 | 2020-09-29 | Mellanox Technologies Ltd. | Caching policy in a multicore system on a chip (SOC) |
| US10153020B1 (en) * | 2017-06-09 | 2018-12-11 | Micron Technology, Inc. | Dual mode ferroelectric memory cell operation |
| US10153022B1 (en) * | 2017-06-09 | 2018-12-11 | Micron Technology, Inc | Time-based access of a memory cell |
| US10510383B2 (en) | 2017-10-03 | 2019-12-17 | Sandisk Technologies Llc | State dependent sense circuits and pre-charge operations for storage devices |
| US10667621B2 (en) * | 2018-04-19 | 2020-06-02 | Micron Technology, Inc. | Multi-stage memory sensing |
| US10395710B1 (en) * | 2018-05-21 | 2019-08-27 | Avalanche Technology, Inc. | Magnetic memory emulating dynamic random access memory (DRAM) |
| KR102695482B1 (ko) * | 2018-08-03 | 2024-08-14 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
| US11360704B2 (en) | 2018-12-21 | 2022-06-14 | Micron Technology, Inc. | Multiplexed signal development in a memory device |
| JP2021197099A (ja) | 2020-06-18 | 2021-12-27 | 富士フイルムビジネスイノベーション株式会社 | 情報処理装置及びプログラム |
-
2019
- 2019-12-02 US US16/700,983 patent/US11360704B2/en active Active
- 2019-12-04 TW TW111112097A patent/TW202230141A/zh unknown
- 2019-12-04 TW TW108144214A patent/TWI762840B/zh active
- 2019-12-05 EP EP19900061.3A patent/EP3899944A4/en not_active Withdrawn
- 2019-12-05 WO PCT/US2019/064597 patent/WO2020131395A1/en not_active Ceased
- 2019-12-05 JP JP2021533432A patent/JP2022511972A/ja active Pending
- 2019-12-05 CN CN201980082612.0A patent/CN113243031B/zh active Active
- 2019-12-05 CN CN202410511570.0A patent/CN118430606B/zh active Active
- 2019-12-20 US US17/414,298 patent/US12189988B2/en active Active
- 2019-12-20 WO PCT/US2019/067844 patent/WO2020132438A1/en not_active Ceased
- 2019-12-20 JP JP2021533238A patent/JP2022511949A/ja active Pending
- 2019-12-20 US US17/414,823 patent/US11669278B2/en active Active
- 2019-12-20 JP JP2021535529A patent/JP7105376B2/ja active Active
- 2019-12-20 WO PCT/US2019/067838 patent/WO2020132434A1/en not_active Ceased
- 2019-12-20 JP JP2021535536A patent/JP2022514341A/ja active Pending
- 2019-12-20 WO PCT/US2019/067832 patent/WO2020132430A1/en not_active Ceased
- 2019-12-20 WO PCT/US2019/067834 patent/WO2020132432A1/en not_active Ceased
- 2019-12-20 CN CN201980084236.9A patent/CN113196247B/zh active Active
- 2019-12-20 CN CN201980084212.3A patent/CN113196394B/zh active Active
- 2019-12-20 JP JP2021535534A patent/JP2022514073A/ja active Pending
- 2019-12-20 EP EP19898746.3A patent/EP3899941A4/en not_active Withdrawn
- 2019-12-20 EP EP19900424.3A patent/EP3899734A4/en not_active Withdrawn
- 2019-12-20 CN CN201980082657.8A patent/CN113196246B/zh active Active
- 2019-12-20 US US17/415,664 patent/US11989450B2/en active Active
- 2019-12-20 WO PCT/US2019/067829 patent/WO2020132428A1/en not_active Ceased
- 2019-12-20 JP JP2021535540A patent/JP7165269B2/ja active Active
- 2019-12-20 EP EP19899500.3A patent/EP3899942A4/en not_active Withdrawn
- 2019-12-20 CN CN201980084577.6A patent/CN113228175B/zh active Active
- 2019-12-20 EP EP19900287.4A patent/EP3899940A4/en not_active Withdrawn
- 2019-12-20 CN CN201980084464.6A patent/CN113196248B/zh active Active
- 2019-12-20 US US16/722,860 patent/US11221797B2/en active Active
- 2019-12-20 WO PCT/US2019/067840 patent/WO2020132435A1/en not_active Ceased
- 2019-12-20 US US17/414,296 patent/US11520529B2/en active Active
- 2019-12-20 US US16/722,981 patent/US11340833B2/en active Active
- 2019-12-20 CN CN202410398647.8A patent/CN118295934A/zh active Pending
- 2019-12-20 US US17/414,297 patent/US11372595B2/en active Active
- 2019-12-20 CN CN201980084160.XA patent/CN113228174B/zh active Active
- 2019-12-20 CN CN202510748951.5A patent/CN120581049A/zh active Pending
- 2019-12-20 US US17/415,673 patent/US11726714B2/en active Active
- 2019-12-20 EP EP19900288.2A patent/EP3899732A4/en not_active Withdrawn
- 2019-12-20 EP EP19900916.8A patent/EP3899733A4/en not_active Withdrawn
- 2019-12-20 JP JP2021535559A patent/JP7175398B2/ja active Active
- 2019-12-20 CN CN202510992553.8A patent/CN120877798A/zh active Pending
-
2022
- 2022-01-04 US US17/568,467 patent/US11693599B2/en active Active
- 2022-05-04 US US17/736,806 patent/US11656801B2/en active Active
- 2022-06-07 US US17/834,659 patent/US11709634B2/en active Active
- 2022-06-22 US US17/846,715 patent/US11934703B2/en active Active
- 2022-09-16 JP JP2022147490A patent/JP2022168310A/ja active Pending
- 2022-10-21 JP JP2022168730A patent/JP2022183340A/ja active Pending
- 2022-11-03 US US17/980,546 patent/US12353762B2/en active Active
-
2024
- 2024-02-27 US US18/589,184 patent/US12411637B2/en active Active
- 2024-04-12 US US18/634,610 patent/US12481461B2/en active Active
- 2024-12-03 US US18/967,242 patent/US20250173093A1/en active Pending
-
2025
- 2025-06-18 US US19/242,583 patent/US20250372143A1/en active Pending
- 2025-08-21 US US19/306,703 patent/US20260056683A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022514341A5 (https=) | ||
| JPWO2020132430A5 (https=) | ||
| US9437255B2 (en) | Semiconductor device controlling refresh operation for preventing wordline disturbance | |
| CN105654983B (zh) | 半导体器件及包括半导体器件的存储系统 | |
| US20130329491A1 (en) | Hybrid Memory Module | |
| KR102906228B1 (ko) | 메모리 장치 및 그 동작방법 | |
| US8935467B2 (en) | Memory system, and a method of controlling an operation thereof | |
| EP3220277B1 (en) | Memory accessing method, storage-class memory, and computer system | |
| CN106997324A (zh) | 非易失性存储器模块、具有其的计算系统及其操作方法 | |
| JP2020502606A5 (https=) | ||
| JP2006114206A5 (https=) | ||
| US10846220B2 (en) | Memory system and operation method thereof | |
| US10223037B2 (en) | Memory device including controller for controlling data writing using writing order confirmation request | |
| KR20130136342A (ko) | 반도체 장치 및 그 동작 방법 | |
| US10725698B2 (en) | Memory controller and control method thereof | |
| US7023726B1 (en) | Hybrid magnetoresistive random access memory (MRAM) architecture | |
| KR101436442B1 (ko) | 읽기 및 쓰기 접근에 따른 선택적 리프레쉬 기능을 구비한 동적 메모리 장치 및 그 선택적 리프레쉬 방법 | |
| KR20170060739A (ko) | 반도체 메모리 장치 및 이를 포함하는 메모리 시스템 | |
| US20170004095A1 (en) | Memory Control Circuit and Storage Device | |
| CN105719683B (zh) | 存储器件 | |
| US20140258606A1 (en) | Storage control device, storage device, information processing system, and storage control method | |
| US10592163B2 (en) | Controlling write pulse width to non-volatile memory based on free space of a storage | |
| US9817767B2 (en) | Semiconductor apparatus and operating method thereof | |
| WO2007116486A1 (ja) | メモリ装置、その制御方法、その制御プログラム、メモリ・カード、回路基板及び電子機器 | |
| CN120066398A (zh) | 存储器装置、存储器系统、操作存储器系统的方法和控制存储器装置的方法 |