CN113243031B - 存储器装置中的多路复用信号开发 - Google Patents

存储器装置中的多路复用信号开发 Download PDF

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Publication number
CN113243031B
CN113243031B CN201980082612.0A CN201980082612A CN113243031B CN 113243031 B CN113243031 B CN 113243031B CN 201980082612 A CN201980082612 A CN 201980082612A CN 113243031 B CN113243031 B CN 113243031B
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component
signal development
signal
memory
components
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CN113243031A (zh
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D·A·尤达诺夫
S·K·贾因
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Micron Technology Inc
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Micron Technology Inc
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    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2236—Copy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2272—Latency related aspects

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