JP2020530199A - 高純度酸化スズの堆積のための有機金属化合物及び方法 - Google Patents

高純度酸化スズの堆積のための有機金属化合物及び方法 Download PDF

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Publication number
JP2020530199A
JP2020530199A JP2020505377A JP2020505377A JP2020530199A JP 2020530199 A JP2020530199 A JP 2020530199A JP 2020505377 A JP2020505377 A JP 2020505377A JP 2020505377 A JP2020505377 A JP 2020505377A JP 2020530199 A JP2020530199 A JP 2020530199A
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organometallic compound
netme
nme
compound according
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JP2020530199A5 (enExample
Inventor
オデドラ・ラジェッシュ
ドン・クンハイ
ファブリヤック・ダイアナ
グラフ・ウェスレー
Original Assignee
シースター ケミカルズ アンリミティッド ライアビリティ カンパニー
シースター ケミカルズ アンリミティッド ライアビリティ カンパニー
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Publication of JP2020530199A publication Critical patent/JP2020530199A/ja
Publication of JP2020530199A5 publication Critical patent/JP2020530199A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
JP2020505377A 2017-08-02 2018-07-31 高純度酸化スズの堆積のための有機金属化合物及び方法 Pending JP2020530199A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022194698A JP7577104B2 (ja) 2017-08-02 2022-12-06 有機金属化合物及びその精製法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA2975104 2017-08-02
CA2975104A CA2975104A1 (en) 2017-08-02 2017-08-02 Organometallic compounds and methods for the deposition of high purity tin oxide
PCT/CA2018/050933 WO2019023797A1 (en) 2017-08-02 2018-07-31 Organometallic compounds and methods for the deposition of high purity tin oxide

Related Child Applications (1)

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JP2022194698A Division JP7577104B2 (ja) 2017-08-02 2022-12-06 有機金属化合物及びその精製法

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JP2020530199A true JP2020530199A (ja) 2020-10-15
JP2020530199A5 JP2020530199A5 (enExample) 2021-09-16

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JP2022194698A Active JP7577104B2 (ja) 2017-08-02 2022-12-06 有機金属化合物及びその精製法

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US (3) US20190337969A1 (enExample)
JP (2) JP2020530199A (enExample)
KR (1) KR102715899B1 (enExample)
CN (1) CN111032667B (enExample)
CA (1) CA2975104A1 (enExample)
SG (1) SG11202000884RA (enExample)
TW (2) TW201920214A (enExample)
WO (1) WO2019023797A1 (enExample)

Cited By (11)

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JP2022097386A (ja) * 2020-12-18 2022-06-30 三星エスディアイ株式会社 半導体フォトレジスト用組成物およびその製造方法、ならびにこれを用いたパターン形成方法
JP2023036627A (ja) * 2017-08-02 2023-03-14 シースター ケミカルズ アンリミティッド ライアビリティ カンパニー 有機金属化合物及びその精製法
JP2024500759A (ja) * 2020-12-17 2024-01-10 アプライド マテリアルズ インコーポレイテッド フォトレジストとして使用される炭素ドープされた金属酸化物の気相堆積
JP2024504730A (ja) * 2021-01-28 2024-02-01 インテグリス・インコーポレーテッド 有機スズ化合物を調製する方法
JP2024504731A (ja) * 2021-01-29 2024-02-01 インテグリス・インコーポレーテッド 有機スズ化合物を調製するための方法
US12013635B2 (en) 2020-12-18 2024-06-18 Samsung Sdi Co., Ltd. Semiconductor photoresist composition and method of forming patterns using the composition
JP2024529980A (ja) * 2021-07-30 2024-08-14 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング ジオルガノ錫ジハロゲン化物の製造
WO2025117562A2 (en) 2023-11-30 2025-06-05 Mitsubishi Chemical Corporation Methods for purifying tin compounds
WO2025147417A1 (en) 2024-01-05 2025-07-10 Mitsubishi Chemical Corporation Method for cleaning an apparatus for a tin compound and the cleaned apparatus obtained thereby
WO2025147416A1 (en) 2024-01-05 2025-07-10 Mitsubishi Chemical Corporation Method for cleaning an apparatus for a tin compound and the cleaned apparatus obtained thereby
JP2025522343A (ja) * 2022-06-06 2025-07-15 アプライド マテリアルズ インコーポレイテッド Ｄｒａｍのキャパシタモールドパターニング用炭化ルテニウム

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US10787466B2 (en) 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US11673903B2 (en) 2018-04-11 2023-06-13 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
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KR20240104192A (ko) 2018-11-14 2024-07-04 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
KR20240165480A (ko) 2018-12-20 2024-11-22 램 리써치 코포레이션 레지스트들의 건식 현상
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US11966158B2 (en) 2019-01-30 2024-04-23 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
US11609494B2 (en) 2019-04-30 2023-03-21 Samsung Sdi Co., Ltd. Semiconductor photoresist composition and method of forming patterns using the composition
KR102606844B1 (ko) * 2019-04-30 2023-11-27 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
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KR20220052968A (ko) * 2019-08-29 2022-04-28 시스타 케미칼즈 유엘씨 고순도 산화주석의 증착을 위한 유기금속 화합물 및 산화주석 필름의 건조 에칭 및 증착 반응기
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KR102619719B1 (ko) 2020-05-12 2023-12-28 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
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US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
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JP2023539735A (ja) * 2020-08-25 2023-09-19 インプリア・コーポレイション 反応物の供給に好都合な配位子を持つ有機スズ組成物の製造方法
KR102586112B1 (ko) * 2020-09-14 2023-10-05 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
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KR20230148424A (ko) * 2021-02-23 2023-10-24 램 리써치 코포레이션 할로겐-함유 유기주석 포토레지스트 및 지방족-함유 유기주석 포토레지스트 및 이의 방법들
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