US20190337969A1 - Organometallic compounds and methods for the deposition of high purity tin oxide - Google Patents

Organometallic compounds and methods for the deposition of high purity tin oxide Download PDF

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US20190337969A1
US20190337969A1 US16/442,930 US201916442930A US2019337969A1 US 20190337969 A1 US20190337969 A1 US 20190337969A1 US 201916442930 A US201916442930 A US 201916442930A US 2019337969 A1 US2019337969 A1 US 2019337969A1
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netme
organometallic compound
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alkyl
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Rajesh Odedra
Cunhai Dong
Diana FABULYAK
Wesley GRAFF
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Seastar Chemicals ULC
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Priority to US16/834,361 priority Critical patent/US11643422B2/en
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition

Definitions

  • the disclosure relates to organometallic compounds useful for the deposition of high purity tin oxide and to the purification of such organometallic compounds. Also disclosed are methods for the deposition of high purity tin oxide films using such compounds.
  • the semiconductor industry is producing more and more components having smaller and smaller feature sizes.
  • the production of such semiconductor devices reveals new design and manufacturing challenges which must be addressed in order to maintain or improve semiconductor device performance (for example, the conductor line width and spacing within the semiconductor devices decreases).
  • the production of semiconductor wiring stacks with high density, high yield, good signal integrity as well as suitable power delivery also presents challenges.
  • Lithography is a critical pattern transfer technique widely used in the fabrication of a variety of electronic devices which contain microstructures, such as semiconductor devices and liquid crystal devices. As device structures are miniaturized, masking patterns used in the lithography process must be optimized to accurately transfer patterns to the underlying layers.
  • Multiple-pattern lithography represents a class of technologies developed for photolithography in order to enhance the feature density of semiconductor devices.
  • Double-patterning a subset of multiple-patterning, employs multiple masks and photolithographic steps to create a particular level of a semiconductor device. With benefits such as tighter pitches and narrower wires, double-patterning alters relationships between variables related to semiconductor device wiring and wire quality to sustain performance.
  • a liquid immersion lithography method has been reported, which purports to address some of the issues facing the industry.
  • a resist film is exposed through a liquid refractive index medium (refractive index liquid, immersion liquid) such as pure water or a fluorocarbon inert liquid, having a predetermined thickness, with the liquid refractive index medium lying at least on the resist film between a lens and the resist film on a substrate.
  • a liquid refractive index medium reactive index liquid, immersion liquid
  • immersion liquid such as pure water or a fluorocarbon inert liquid
  • the space of the path of exposure light which has conventionally been filled with an inert gas, such as air or nitrogen gas, is replaced by a liquid having a larger refractive index (n), for example, pure water, with the result that even though a light source having a wavelength for the exposure conventionally used is employed, high resolution can be achieved without lowering the depth of focus, like the case where a light source having a shorter wavelength or a lens having a higher NA (numerical aperture) is used.
  • n refractive index
  • liquid immersion lithography By employing liquid immersion lithography, a resist pattern having a higher resolution and an excellent depth of focus can be formed at a low cost, using a lens mounted on existing exposure systems (i.e. the purchase of a new exposure system is not necessary), such that the liquid immersion lithography has attracted considerable attention.
  • This new conformal deposition layer can server 2 major functions:
  • the purity of the film produced is also required to be high, due to the use of the film as a resist protection layer during etch or during litho immersion processing. Impurities in the film can have adverse reactions, chemically or optically, which interfere with the pattern quality and which can affect critical dimensions on the device features, resulting in degradation of the integrated device performance.
  • Disclosed herein are compounds useful for the deposition of high purity tin oxide. Also disclosed are methods for the deposition of tin oxide films using such compounds. Such films demonstrate high conformality, high etch selectivity, high hardness and modulus, and are optically transparent.
  • tin oxide using such compounds.
  • CVD chemical vapour deposition
  • ALD atomic layer deposition
  • step coverage i.e. high conformality
  • Such purification yields so-called “ultra-pure” compounds having much lower levels of metallic impurities compared to compounds purified by conventional means.
  • ultra-pure compounds in the processes disclosed herein results in films having improved properties compared to those known in the art.
  • the films may have improved hermetic properties, low metallic impurities and improvements in the associated yield loss and long term reliability failures resulting from such metallic impurities.
  • Multistage distillation may be carried out in the form of packed columns, stage distillation columns employing trays, multiple distillation columns, or other types of multistage distillation.
  • the tin oxide film so produced may also exhibit high etch selectivity verses traditional masking and conformal layers used in multilayer patterning integration techniques, resulting in a thinner film requirement as compared to traditional films such as amorphous carbon, boron doped carbon, etc.
  • A is selected from the group consisting of an (NR′ 2 ) group and a 3- to 7-membered N-containing heterocyclic group.
  • A is an (NR′ 2 ) group.
  • A is a 3- to 7-membered N-containing heterocyclic group.
  • A is a pyrrolidinyl group.
  • a 4-x is (NMe 2 ) 2 or (NEtMe) 2 .
  • R and R′ group is an independently selected alkyl group having from 1 to 10 carbon atoms. It is contemplated that each R and R′ group may be an independently selected alkyl group having from 1 to 6 carbon atoms. In embodiments, each R and R′ group is an independently selected alkyl group having from 1 to 4 carbon atoms. In embodiments, R and R′ is independently selected from the group consisting of methyl, ethyl, propyl, iso-propyl, tert-butyl, iso-butyl and n-butyl. In embodiments R and R′ represent different alkyl groups.
  • the compound of Formula I is selected from the group consisting of Me 2 Sn(NMe 2 ) 2 , Me 2 Sn(NEtMe) 2 , t-BuSn(NEtMe) 3 , i-PrSn(NEtMe) 3 , n-Pr(NEtMe) 3 , EtSN(NEtMe) 3 , i-BuSn(NEtMe) 3 , Et 2 Sn(NEtMe) 2 , Me 2 Sn(NEtMe) 2 , Sn(NEtMe) 4 , Bu 2 Sn(NEtMe) 2 , Et 2 Sn(NMe 2 ) 2 , Me 2 Sn(NEt 2 ) 2 , Sn(Pyrrolidinyl) 4 and Bu 2 Sn(Pyrrolidinyl) 2 .
  • the compound of Formula I is selected from the group consisting of Me 2 Sn(NMe 2 ) 2 , Me 2 Sn(NEtMe) 2 , Et 2 Sn(NMe 2 ) 2 , Me 2 Sn(NEt 2 ) 2 , Sn(Pyrrolidinyl) 4 ; and Bu 2 Sn(Pyrrolidinyl) 2 .
  • the compound of Formula I is selected from the group consisting of Me 2 Sn(NEtMe) 2 and Me 2 Sn(NMe 2 ) 2 .
  • the compound of Formula I is Me 2 Sn(NMe 2 ) 2 .
  • a composition that comprises the organometallic compound of any of the disclosed compounds and another organometallic compound containing Sn.
  • the another organometallic compound may be a compound of Formula I.
  • another organometallic compound is selected from the group consisting of MeSn(NMe 2 ) 3 and Sn(NMe 2 ) 4 .
  • a method id disclosed for the deposition of a tin oxide layer on a substrate by a vapour deposition process comprises the steps of:
  • the activation condition is plasma generation.
  • a method is also disclosed for spacer-defined double patterning deposition. The method comprises the steps of:
  • a method of using multistage distillation to purify the organometallic compounds disclosed In an embodiment, 2 to 20 stages are required to reduce metal contamination to ⁇ 1 ppm. In an embodiment, 2 to 20 stages are required to reduce metal contamination to ⁇ 100 ppb. In an embodiment, 2 to 20 stages are required to reduce metal contamination to ⁇ 10 ppb. In an embodiment, 2 to 20 stages are required to reduce metal contamination to 1 ppb or less.
  • FIG. 1 shows a sectional view of one embodiment of a processing chamber useful for the processes disclosed herein.
  • FIG. 3 is a process flow diagram depicting a method for depositing a tin oxide film
  • FIG. 5 shows the NMR spectrum of Me 3 SnNMe 2 .
  • FIG. 6 shows the NMR spectrum of Sn(NMe 2 ) 4 .
  • FIG. 7 shows the NMR spectrum of Me 2 Sn(NEtMe) 2 .
  • FIG. 8 shows the NMR spectrum of Bu 2 Sn(NMe 2 ) 2 .
  • FIG. 9 shows the NMR spectrum of Me 2 SnEt 2 .
  • FIG. 10 shows the NMR spectrum of Me 4 Sn.
  • FIG. 11 shows the NMR spectrum of Bu 2 Sn(OMe) 2 .
  • FIG. 12 shows the NMR spectrum of Bu 2 Sn(OAc) 2 .
  • FIG. 13 shows the NMR spectrum of Et 2 Sn(NMe 2 ) 2 .
  • FIG. 14 shows the NMR spectrum of Me 2 Sn(NEt 2 ) 2 .
  • FIG. 15 shows the NMR spectrum of Sn(Pyrrolodinyl) 4 .
  • FIG. 16 shows the NMR spectrum of Bu 2 Sn(Pyrrolodinyl) 2 .
  • FIG. 17 shows the NMR spectrum of Et 2 Sn(Pyrrolodinyl) 2 .
  • FIG. 18 shows the NMR spectrum of Me 2 Sn(NMe 2 ) 2 .
  • FIG. 19 shows the NMR spectrum of tBuSn(NMe 2 ) 3
  • FIG. 20 shows the NMR of the reaction of (NMe 2 ) 4 Sn with ethanol.
  • FIG. 21 shows the NMR of the reaction of Me 3 SnNMe 2 with water.
  • FIG. 22 shows the NMR of the reaction of Bu 2 Sn(OAc) 2 with methanol.
  • FIG. 23 shows the NMR of the reaction of Bu 2 Sn(OMe) 2 with acetic acid.
  • FIG. 24 shows the NMR of the reaction of Bu 2 Sn(NMe 2 ) 2 with methanol.
  • FIG. 25 shows the NMR of Me 4 Sn before and after heating at 200° C.
  • FIG. 26 shows the NMR of Et 2 Sn(NMe 2 ) 2 before and after heating at 200° C.
  • FIG. 27 shows the NMR of Me 2 Sn(NMe 2 ) 2 before and after heating at 150° C.
  • FIG. 28 shows the decomposition temperatures of illustrative compounds of Formula I.
  • FIG. 29 shows a schematic of a multistage distillation apparatus.
  • organometallic compounds of Formula I below:
  • Compounds of Formula I include those in which R is selected from the group consisting of alkyl and aryl groups having from 1 to 10 carbon atoms. Particular compounds are those in which R is selected from the group consisting of alkyl and aryl groups having from 1 to 6 carbon atoms. More particular are those in which R is selected from the group consisting of alkyl and aryl groups having from 1 to 4 carbon atoms. Examples of such compounds include those in which R is a methyl, ethyl or a butyl group.
  • Compounds of Formula I include those in which R′ is selected from the group consisting of alkyl, acyl and aryl groups having from 1 to 10 carbon atoms. Particular compounds are those in which R′ is selected from the group consisting of alkyl, acyl and aryl groups having from 1 to 6 carbon atoms. More particular are those in which R′ is selected from the group consisting of alkyl, acyl and aryl groups having from 1 to 4 carbon atoms. Examples of such compounds include those in which R′ is a methyl group, an ethyl group or an acetyl group.
  • Compounds of Formula I include those in which Y is selected from the group consisting of N, O, S, and P. Particular compounds are those in which Y is selected from the group consisting of N and O.
  • Compounds of Formula I include those in which x is an integer from 0 to 4. In particular embodiments, x is an integer from 1 to 3. More preferably, x is 2.
  • Compounds of Formula I include those in which A is a 3- to 7-membered N-containing heterocyclic group such as aziridinyl, pyrrolidinyl, and piperidinyl. Particular compounds are those in which A is a pyrrolidinyl or piperidinyl group.
  • Compounds of Formula I include those in which R is an alkyl group and A is an NR′ 2 group, and wherein R′ is an alkyl group. Particular compounds are those in which R and R′ represent different alkyl groups.
  • Compounds of Formula I are thermally stable whilst exhibiting good reactivity. Thus, delivery of the compound to the deposition chamber will take place without decomposition occurring. (decomposition results in a deposited film which will not be uniform).
  • a good stability and reactivity profile as demonstrated by the compounds of the invention, also means that less material is required to be delivered to the growth chamber (less material is more economic), and cycling will be faster (as there will be less material left in the chamber at the end of the process to be pumped off), meaning that thicker films can be deposited in shorter times, so increasing throughput.
  • ALD can be carried out at much lower temperatures (or using a wider temperature window) using compounds of Formula I than processes of the art. Thermal stability also means that material can be purified much more easily after synthesis, and handling becomes easier.
  • Such compounds are useful for encapsulating and protecting the resist layers used in liquid immersion lithography (i.e. acting as a “mask”).
  • the compounds disclosed herein may be used for the manufacture of a transparent tin oxide film having properties suitable for deposition over photoresists, or other organic masking layers, to allow for protection of the underlying layer during liquid immersion lithography, and which permits the manufacture of devices having improved semiconductor device performance such as low defect density, improved device reliability, high device density, high yield, good signal integrity and suitable power delivery, as required by the industry.
  • a compound of Formula I in the methods disclosed herein allows for chemical vapour deposition (CVD) and atomic layer deposition (ALD) of tin oxide at a low temperature, and produces films consisting of high purity tin oxide having low metallic impurities, low alpha emission characteristics, and >99% step coverage (i.e. high comformality) over device features and topography.
  • CVD chemical vapour deposition
  • ALD atomic layer deposition
  • FIG. 1 shows a sectional view of one embodiment of a processing chamber 800 suitable for CVD (Chemical Vapor Deposition), ALD (Atomic Layer Deposition), Etching, or doping dopants into a substrate.
  • Suitable processing chambers that may be adapted for use with the teachings disclosed herein include those commonly used in integrated circuit fabrication, it is contemplated that many types of processing chambers may be adapted to benefit from one or more of the inventive features disclosed herein.
  • the processing chamber 800 as described herein may be utilized as a plasma deposition apparatus. However, the processing chamber 800 may also include, but not be limited to, deposition, etching, and doping systems. The processing could be using either thermal or plasma deposition or etching mechanisms.
  • the deposition apparatus can deposit or etch many differing materials on a substrate.
  • One such process includes deposition of a conformal tin oxide on a substrate, such as a semiconductor substrate, with desired physical properties of film transparency to varying wavelengths of light, deposition conformality, tin oxide low in metal impurities, low film roughness, and high etch selectivity to underlying layers.
  • the processing chamber 800 may include chamber body 801 defining an interior processing region 809 .
  • a substrate support 834 is disposed in the processing chamber 800 .
  • a substrate 838 having features 844 formed thereon may be disposed on the substrate support 834 during a directional plasma process.
  • the substrate 838 may include, but not be limited to, a semiconductor wafer, flat panel, solar panel, and polymer substrate.
  • the semiconductor wafer may have a disk shape with a diameter of 200 millimeters (mm), 300 millimeters (mm) or 450 millimeters (mm) or other size, as needed.
  • a RF plasma source 806 is coupled to the chamber body 801 and configured to generate a plasma 840 in the processing chamber 800 .
  • a gas source 888 is coupled to the processing chamber 800 to supply a gas to the interior processing region 809 .
  • a gas include, but are not limited to, oxidants such as O 2 , O 3 , NO, NO2, CO2, H2O2, and H2O.
  • the plasma source 806 may generate the plasma 840 by exciting and ionizing the gas provided to the processing chamber 800 . Ions in the plasma 840 may be attracted across the plasma sheath 842 by different mechanisms.
  • a bias source 890 is coupled to the substrate support 834 configured to bias the substrate 838 to attract ions 802 from the plasma 840 across the plasma sheath 842 .
  • the bias source 890 may be a DC power supply to provide a DC voltage bias signal or an RF power supply to provide an RF bias signal.
  • a feed gas comprising a compound of Formula I may be flowed in step 1 to saturate the surface of features 844 , then in subsequent step 2 an oxidizing gas, as described above, is ionized in the plasma and reacts on surface 844 to form a 0.1 to 2.0 A conformal layer of SnO 2 or other layers (layer 847 ). Then steps 1 and 2 are repeated until the desired conformal film thickness is achieved.
  • the process steps and gas flows would be designed to modify the chemical make-up of layer 844 in step 1 and followed by the gas in step 2 to etch a thin layer of the modified 844 surface.
  • steps 1 and 2 would be repeated to achieve the desired etch target removal of layer 844 .
  • layer 844 could be comprised of organic material such as photo resist that is sensitive to immersion chemistry and therefore needs the protection layer 847 to be deposited to prevent chemical attack or modification as mentioned previously.
  • the layer 844 could be adversely affected by high temperature exposure above 250° C., 200° C., 150° C., or in extreme cases 100° C., such that substrate 834 must be maintained at a low temperature to prevent damage to layer 844 .
  • layer 847 is deposited at low temperature to prevent damage to features and layer 844 .
  • the source gases must be chosen such that the chemical reaction can occur at a sufficient deposition rate to maintain an economically feasible and short processing time.
  • Compounds of Formula I are examples of molecules which have sufficiently high rates of reaction to provide for high deposition rates on the order of 0.2 to 2.0 angstroms/cycle.
  • Processes disclosed herein are carried out under activating conditions, such as using a plasma source, as described above.
  • the processing chamber may also rely on the use of thermal, chemical or other suitable activation processes without the need for a plasma reaction.
  • iterative sequences of plasma and non-plasma activation steps to deposit or etch thin layers of materials may be used.
  • FIGS. 2A-2E illustrate schematically cross-sectional views of a substrate 834 at different stages of an integrated circuit fabrication sequence for making a tin oxide film.
  • the substrate 834 may have a substantially planar surface.
  • the substrate may have patterned structures, a surface having trenches, holes, or vias formed therein.
  • the substrate 834 may also have a substantially planar surface having a structure formed thereon or therein at a desired elevation. While the substrate 834 is illustrated as a single body, it is understood that the substrate 834 may contain one or more material layers used in forming semiconductor devices such as metal contacts, trench isolations, gates, bit-lines, or any other interconnect features.
  • a substrate structure 850 denotes the substrate 834 together with other material layers formed on the substrate 834 .
  • the substrate 834 may comprise one or more metal layers, one or more dielectric materials, semiconductor material, and combinations thereof utilized to fabricate semiconductor devices.
  • the substrate 834 may include an oxide material, a nitride material, a polysilicon material, or the like, depending upon application.
  • the substrate 834 may include the silicon substrate material, an oxide material, and a nitride material, with or without polysilicon sandwiched in between.
  • the substrate 834 may include a plurality of alternating oxide and nitride materials (i.e., oxide-nitride-oxide (ONO)) deposited on a surface of the substrate (not shown).
  • the substrate 834 may include a plurality of alternating oxide and nitride materials, one or more oxide or nitride materials, polysilicon or amorphous silicon materials, oxides alternating with amorphous silicon, oxides alternating with polysilicon, undoped silicon alternating with doped silicon, undoped polysilicon alternating with doped polysilicon, or updoped amorphous silicon alternating with doped amorphous silicon.
  • the substrate 834 may be any substrate or material surface upon which film processing is performed.
  • the substrate 834 may be a material such as crystalline silicon, silicon oxide, silicon oxynitride, silicon nitride, strained silicon, silicon germanium, tungsten, titanium nitride, doped or undoped polysilicon, doped or undoped silicon wafers and patterned or non-patterned wafers, silicon on insulator (SOI), carbon doped silicon oxides, silicon nitrides, doped silicon, germanium, gallium arsenide, glass, sapphire, low k dielectrics, and combinations thereof.
  • SOI silicon on insulator
  • FIG. 2A illustrates a cross-sectional view of a substrate structure 850 having a material layer 844 that has been previously formed thereon.
  • the material layer 844 may be a dielectric material, for example an oxide layer, such as a low-k carbon containing dielectric layer, a porous silicon oxycarbide low-k or ultra low-k dielectric layer.
  • FIG. 2B depicts a tin oxide layer 847 deposited on the substrate structure 850 of FIG. 2A .
  • the tin oxide layer 847 may be useful as a pattern transfer layer, or a hard mask, for subsequent etch processes.
  • the tin oxide layer 847 is formed on the substrate structure 850 by any suitable deposition process, such as via PEALD (plasma-enhanced atomic layer deposition), as will be discussed in more detail below.
  • PEALD plasma-enhanced atomic layer deposition
  • an optional capping layer may be formed on the tin oxide layer 847 prior to the formation of energy sensitive resist material 808 .
  • the optional capping layer functions as a mask for the tin oxide layer 847 when the pattern is transferred therein and protects amorphous carbon layer 847 from energy sensitive resist material 808 .
  • energy sensitive resist material 808 is formed on the tin oxide layer 847 .
  • the layer of energy sensitive resist material 808 can be spin-coated on the substrate to a desired thickness.
  • Most energy sensitive resist materials are sensitive to ultraviolet (UV) radiation having a wavelength less than about 450 nm, and for some applications having wavelengths of 245 nm or 193 nm.
  • the energy sensitive resist material 808 may be a polymer material or a carbon-based polymer.
  • a pattern is introduced into the layer of energy sensitive resist material 808 by exposing energy sensitive resist material 808 to UV radiation through a patterning device, such as a mask, and subsequently developing energy sensitive resist material 808 in an appropriate developer. After energy sensitive resist material 808 has been developed, a defined pattern of through openings 840 is present in energy sensitive resist material 808 , as shown in FIG. 2C .
  • the pattern defined in energy sensitive resist material 808 is transferred through the tin oxide layer 847 using the energy sensitive resist material 808 as a mask.
  • An appropriate chemical etchant is used that selectively etches the tin oxide layer 847 over the energy sensitive resist material 808 and the material layer 844 , extending openings 840 to the surface of material layer 844 .
  • Appropriate chemical etchants may include reducing or halogenated chemistries including but not limited to hydrogen, ammonia, and various chlorine containing molecules.
  • the pattern is then transferred through material layer 844 using the tin oxide layer 847 as a hardmask.
  • an etchant is used that selectively removes material layer 844 over the tin oxide layer 847 .
  • the tin oxide layer 847 can optionally be stripped from the substrate 834 .
  • FIG. 3 is a process flow diagram depicting a method for depositing a tin oxide film according to an embodiment.
  • FIGS. 2A-2E are schematics showing cross-sectional views of a substrate at different stages of an integrated circuit fabrication sequence.
  • the method 100 begins at block 110 by providing a substrate having a material layer deposited thereon.
  • the substrate and the material layer may be the substrate 834 and the material layer 844 as shown in FIGS. 2A and 2B .
  • a compound of Formula I is flowed into the processing volume from a metal precursor source.
  • the metal containing precursor is allowed sufficient residence time to adhere to the substrate surface 834 , after which an oxidant is flowed into the processing volume.
  • Suitable oxidants include, but are not limited to, compounds such as H 2 O in the gaseous phase, H 2 O 2 in the gaseous phase, O 2 , O 3 , NO, NO 2 , CO, and CO 2 .
  • a plasma is generated in the interior processing volume, allowing the compound of Formula I to react with the ionized oxidizing gases to form a tin oxide layer on the material layer.
  • the tin oxide layer may be formed by any suitable deposition process, such as a plasma-enhanced chemical vapor deposition (PECVD) process or a plasma-enhanced atomic layer deposition (PEALD) process.
  • PECVD plasma-enhanced chemical vapor deposition
  • PEALD plasma-enhanced atomic layer deposition
  • the plasma-enhanced thermal decomposition or reactive process as discussed above may not be used. Instead, the substrate is exposed to the gas mixture of the carbon-containing precursor, the compound of embodiments of the invention, and the reducing agent in the processing volume, which is maintained at an elevated temperature suitable for thermal decomposition of the gas mixture.
  • Other deposition processes such as a metal-organic CVD (MOCVD) process and atomic layer deposition (ALD) process may also be used to form the deposited metal-oxide.
  • MOCVD metal-organic CVD
  • ALD atomic layer deposition
  • Thickness of the tin oxide layer 847 is variable, depending upon the stage of processing.
  • the tin oxide layer 847 may have a thickness from about 50 ⁇ to about 500 ⁇ , such as about 100 ⁇ to about 200 ⁇ such that the tin oxide layer can be consumed during the main etch process with excellent hardmask performance (e.g., good CD control and feature profile).
  • the resulting tin oxide hardmask may be used in various applications such as deep oxide contact etches, DRAM capacitor mold etches, and line and/or space etches.
  • the tin oxide layer may have about 100 ⁇ to about 200 ⁇ .
  • the thickness of the layers may be tuned accordingly.
  • the substrate may be subjected to additional processes, such as the deposition process to form an energy sensitive resist material 808 on the tin oxide layer 847 , and/or patterning process, as discussed above.
  • the tin oxide layer 847 may be patterned using a standard photoresist patterning techniques.
  • the metal tin oxide layer 847 may be removed using a solution comprising hydrogen peroxide and sulfuric acid.
  • One solution comprising hydrogen peroxide and sulfuric acid is known as Piranha solution or Piranha etch.
  • the tin oxide layer 847 may also be removed using etch chemistries containing hydrogen, deuterium, oxygen, and halogens (e.g.
  • a purge process using a suitable purge gas such as argon, nitrogen, helium, or combination thereof, may be performed between the processes described above to prevent unwanted condensation of the gas or byproducts on the chamber walls or other component components.
  • the purge process may be performed with no application of RF power.
  • the following examples of deposition process parameters may be used to form the tin oxide layer on a 300 mm substrate.
  • the process parameters may range from a wafer temperature of about 25° C. to about 700° C., for example, between about 200° C. to about 500° C., depending on the application of the hardmask film.
  • the chamber pressure may range from a chamber pressure of about 1 Torr to about 20 Torr, for example, between about 2 Torr and about 10 Torr.
  • the flow rate of the tin oxide-containing precursor may be from about 100 sccm to about 5,000 sccm, for example, between about 400 sccm and about 2,000 sccm.
  • the precursor flow may be between about 50 mg/min to about 1000 mg/min. If a gaseous source is used, the precursor flow may be between about 200 sccm to about 5000 sccm, for example about 200 sccm to about 600 sccm.
  • the flow rate of a dilution gas may individually range from about 0 sccm to about 20,000 sccm, for example from about 2,000 sccm to about 10,000 sccm.
  • the flow rate of a plasma-initiating gas may individually range from about 0 sccm to about 20,000 sccm, for example from about 200 sccm to about 2,000 sccm.
  • the flow rate of the metal-containing precursor may be from about 1,000 sccm to about 15,000 sccm, for example, between about 5,000 sccm and about 13,000 sccm.
  • the flow rate of the reducing agent may be from about 200 sccm to about 15,000 sccm, for example, between about 1,000 sccm and about 3,000 sccm.
  • Plasma may be generated by applying RF power at a power density to substrate surface area of from about 0.001 W/cm2 to about 5 W/cm2, such as from about 0.01 W/cm2 to about 1 W/cm2, for example about 0.04 W/cm2 to about 0.07 W/cm2.
  • the power application may be from about 1 W to about 2,000 W, such as from about 10 W to about 100 W, for a 300 mm substrate.
  • RF power can be either single frequency or dual frequency. A dual frequency RF power application is believed to provide independent control of flux and ion energy since the energy of the ions hitting the film surface influences the film density.
  • the applied RF power and use of one or more frequencies may be varied based upon the substrate size and the equipment used.
  • the frequency power may be between about 10 KHz and about 30 MHz, for example about 13.56 MHz or greater, such as 27 MHz or 60 MHz.
  • a mixed RF power may be used.
  • the mixed RF power may provide a high frequency power in a range from about 10 MHz to about 60 MHz, for example, about 13.56 MHz, 27 MHz or 60 MHz, as well as a low frequency power in a range of from about 10 KHz to about 1 MHz, for example, about 350 KHz.
  • Electrode spacing i.e., the distance between a substrate and a showerhead, may be from about 200 mils to about 1000 mils, for example, from about 280 mils to about 300 mils spacing.
  • the process range as discussed herein provides a typical deposition rate for the tin oxide layer in the range of about 0.1 ⁇ /cycle to about 2 ⁇ /cycle and can be implemented on a 300 mm substrate in a deposition chamber from most commercially available CVD and ALD processing chambers.
  • the metal-doped oxide layer may be deposited to a thickness between about 50 ⁇ and about 500 ⁇ , such as between about 100 ⁇ and about 200 ⁇ .
  • Compounds of Formula I may also be used in spacer-defined double patterning techniques, as illustrated in FIG. 4 .
  • the steps for such a process are as follows:
  • the liquid was cannulated into another 5 L round bottom flask.
  • the solvents were removed via distillation, and 62 g of the final product were isolated by distillation under reduced pressure (120° C., 6.2 ⁇ 10 ⁇ 2 Torr).
  • the product was confirmed to be tBuSn(NMe 2 ) 3 by NMR spectroscopy. 90% tBuSn(NMe 2 ) 3 and 10% tBu 2 Sn(NMe 2 ) 2 .
  • FIG. 25 shows NMR of Me 4 Sn before and after heating at 200° C. There was no significant change after heating at 200° C. for 1 hr based on both NMR and visual check.
  • FIG. 26 shows NMR of Et 2 Sn(NMe 2 ) 2 before and after heating at 200° C. There was no significant change after heating at 200° C. for 1 hr based on both NMR and visual check.
  • FIG. 27 shows NMR of Me 2 Sn(NMe 2 ) 2 before and after heating at 150° C. There was no significant change after heating at 150° C. for 24 hr based on both NMR and visual check.
  • FIG. 28 shows the decomposition temperature of representative compounds of Formula I.
  • Table 1 summarizes deposition and reactivity data for illustrative compounds of Formula I.
  • Deposition of SnO 2 was carried out using Me 2 Sn(NMe 2 ) 2 and an oxidizing plasma between 40 and 180° C. with deposition rate of 1.4 to 0.8 ⁇ (angstrom) per cycle achieved at 40 and 180° C. respectively. Lower temperature deposition is used to reduce the damage of the underlying photo-resist, amorphous silicon or amorphous carbon layers.
  • symmetric molecules such as Me 4 Sn
  • examples of molecules with improved effectiveness and efficiency are the asymmetric molecules with higher reactivity and absorption and surface reaction properties that lead to higher deprate films that rival the benchmark of 1 A per ALD cycle like is known for common SiO 2 ALD precursors.
  • Particular examples of asymmetric molecules include Me 2 Sn(NMe 2 ) 2 and Me 2 Sn(NEtMe) 2 , where final deposition rates are 0.8 to 1.4 ⁇ /cycle depending on process conditions. The resulting cost reduction for moving to the more reactive molecules is on the order of 5-10 times cost reduction.
  • Me 2 Sn(NMe 2 ) 2 it was also found that keeping a single molecule of Me 2 Sn(NMe 2 ) 2 stable is difficult at temperatures above 10° C.
  • other Sn based compounds for example MeSn(NMe 2 ) 3 or Sn(NMe 2 ) 4 may be added in a mixture with Me 2 Sn(NMe 2 ) 2 .
  • multiple-effect or multistage distillation is a distillation process often used for sea water desalination. It consists of multiple stages or “effects”.
  • the first stage is at the top. Pink areas are vapor, lighter blue areas are liquid feed material. The turquoise represents condensate. It is not shown how feed material enters other stages than the first, however those should be readily understood.
  • F feed in.
  • S heating steam in.
  • C heating steam out.
  • W purified material (condensate) out.
  • R waste material out.
  • O coolant in.
  • P coolant out.
  • VC is the last-stage cooler.
  • the feed material is heated by steam in tubes. Some of the feed material evaporates, and this steam flows into the tubes of the next stage, heating and evaporating more of the distillate. Each stage essentially reuses the energy from the previous stage.
  • the plant can be seen as a sequence of closed spaces separated by tube walls, with a heat source at one end and a heat sink at the other.
  • Each space consists of two communicating subspaces, the exterior of the tubes of stage n and the interior of the tubes in stage n+1.
  • Each space has a lower temperature and pressure than the previous space, and the tube walls have intermediate temperatures between the temperatures of the fluids on each side.
  • the pressure in a space cannot be in equilibrium with the temperatures of the walls of both subspaces; it has an intermediate pressure. As a result, the pressure is too low or the temperature too high in the first subspace, and the feed material evaporates. In the second subspace, the pressure is too high or the temperature too low, and the vapor condenses. This carries evaporation energy from the warmer first subspace to the colder second subspace. At the second subspace the energy flows by conduction through the tube walls to the colder next space.

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KR20200033946A (ko) 2020-03-30
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JP2020530199A (ja) 2020-10-15
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