SG11202000884RA - Organometallic compounds and methods for the deposition of high purity tin oxide - Google Patents
Organometallic compounds and methods for the deposition of high purity tin oxideInfo
- Publication number
- SG11202000884RA SG11202000884RA SG11202000884RA SG11202000884RA SG11202000884RA SG 11202000884R A SG11202000884R A SG 11202000884RA SG 11202000884R A SG11202000884R A SG 11202000884RA SG 11202000884R A SG11202000884R A SG 11202000884RA SG 11202000884R A SG11202000884R A SG 11202000884RA
- Authority
- SG
- Singapore
- Prior art keywords
- deposition
- methods
- tin oxide
- high purity
- organometallic compounds
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 150000002902 organometallic compounds Chemical class 0.000 title 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title 1
- 229910001887 tin oxide Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2284—Compounds with one or more Sn-N linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Chemical Vapour Deposition (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2975104A CA2975104A1 (en) | 2017-08-02 | 2017-08-02 | Organometallic compounds and methods for the deposition of high purity tin oxide |
| PCT/CA2018/050933 WO2019023797A1 (en) | 2017-08-02 | 2018-07-31 | Organometallic compounds and methods for the deposition of high purity tin oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202000884RA true SG11202000884RA (en) | 2020-02-27 |
Family
ID=65229074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202000884RA SG11202000884RA (en) | 2017-08-02 | 2018-07-31 | Organometallic compounds and methods for the deposition of high purity tin oxide |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US20190337969A1 (enExample) |
| JP (2) | JP2020530199A (enExample) |
| KR (1) | KR102715899B1 (enExample) |
| CN (1) | CN111032667B (enExample) |
| CA (1) | CA2975104A1 (enExample) |
| SG (1) | SG11202000884RA (enExample) |
| TW (2) | TW201920214A (enExample) |
| WO (1) | WO2019023797A1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2975104A1 (en) * | 2017-08-02 | 2019-02-02 | Seastar Chemicals Inc. | Organometallic compounds and methods for the deposition of high purity tin oxide |
| US10787466B2 (en) | 2018-04-11 | 2020-09-29 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
| US11673903B2 (en) | 2018-04-11 | 2023-06-13 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
| TWI891088B (zh) | 2018-06-21 | 2025-07-21 | 美商英培雅股份有限公司 | 包含溶劑與單烷基錫三烷氧化物之混合物的溶液 |
| KR20240104192A (ko) | 2018-11-14 | 2024-07-04 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| KR20240165480A (ko) | 2018-12-20 | 2024-11-22 | 램 리써치 코포레이션 | 레지스트들의 건식 현상 |
| US11498934B2 (en) | 2019-01-30 | 2022-11-15 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods |
| US11966158B2 (en) | 2019-01-30 | 2024-04-23 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods |
| US11609494B2 (en) | 2019-04-30 | 2023-03-21 | Samsung Sdi Co., Ltd. | Semiconductor photoresist composition and method of forming patterns using the composition |
| KR102606844B1 (ko) * | 2019-04-30 | 2023-11-27 | 삼성에스디아이 주식회사 | 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20220052968A (ko) * | 2019-08-29 | 2022-04-28 | 시스타 케미칼즈 유엘씨 | 고순도 산화주석의 증착을 위한 유기금속 화합물 및 산화주석 필름의 건조 에칭 및 증착 반응기 |
| SG11202108851RA (en) | 2020-01-15 | 2021-09-29 | Lam Res Corp | Underlayer for photoresist adhesion and dose reduction |
| KR102573327B1 (ko) | 2020-04-02 | 2023-08-30 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102619719B1 (ko) | 2020-05-12 | 2023-12-28 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| US12416863B2 (en) | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US12159787B2 (en) * | 2020-07-02 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| EP4175963A4 (en) * | 2020-07-03 | 2025-10-29 | Entegris Inc | PROCESS FOR THE PREPARATION OF ORGANOETAIN COMPOUNDS |
| US20230045336A1 (en) | 2020-07-07 | 2023-02-09 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| JP2023539735A (ja) * | 2020-08-25 | 2023-09-19 | インプリア・コーポレイション | 反応物の供給に好都合な配位子を持つ有機スズ組成物の製造方法 |
| KR102586112B1 (ko) * | 2020-09-14 | 2023-10-05 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| US12153346B2 (en) * | 2020-09-30 | 2024-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist for semiconductor fabrication |
| KR102673863B1 (ko) | 2020-11-13 | 2024-06-11 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| US20220199406A1 (en) * | 2020-12-17 | 2022-06-23 | Applied Materials, Inc. | Vapor deposition of carbon-doped metal oxides for use as photoresists |
| KR102598259B1 (ko) | 2020-12-18 | 2023-11-02 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102690557B1 (ko) * | 2020-12-18 | 2024-07-30 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물, 이의 제조 방법 및 이를 이용한 패턴 형성 방법 |
| EP4284807A4 (en) * | 2021-01-28 | 2025-01-15 | Entegris, Inc. | PROCESS FOR THE PRODUCTION OF ORGANOTIN COMPOUNDS |
| US11697660B2 (en) * | 2021-01-29 | 2023-07-11 | Entegris, Inc. | Process for preparing organotin compounds |
| KR20230148424A (ko) * | 2021-02-23 | 2023-10-24 | 램 리써치 코포레이션 | 할로겐-함유 유기주석 포토레지스트 및 지방족-함유 유기주석 포토레지스트 및 이의 방법들 |
| WO2022266421A1 (en) * | 2021-06-18 | 2022-12-22 | Entegris, Inc. | Process for preparing organotin compounds |
| US20220411446A1 (en) * | 2021-06-28 | 2022-12-29 | Inpria Corporation | Deuterated organotin compounds, methods of synthesis and radiation patterning |
| WO2023006871A1 (en) * | 2021-07-30 | 2023-02-02 | Merck Patent Gmbh | Production of diorganotin dihalides |
| US11459656B1 (en) | 2021-09-13 | 2022-10-04 | Gelest, Inc | Method and precursors for producing oxostannate rich films |
| EP4405755A4 (en) * | 2021-09-24 | 2025-10-22 | Inpria Corp | HIGH-RESOLUTION LATENT IMAGE PROCESSING, CONTRAST ENHANCEMENT AND THERMAL DEVELOPMENT; PROCESSING APPARATUS |
| EP4437160A1 (en) | 2021-11-24 | 2024-10-02 | Entegris, Inc. | Organotin precursor compounds |
| CN113956283B (zh) * | 2021-11-24 | 2023-12-19 | 云南锡业锡化工材料有限责任公司 | 一种两步法合成低电导率二丁基氧化锡的方法 |
| US11827659B2 (en) * | 2022-03-31 | 2023-11-28 | Feng Lu | Organometallic tin compounds as EUV photoresist |
| EP4526734A1 (en) * | 2022-05-18 | 2025-03-26 | Inpria Corporation | Radiation sensitive organotin compositions having oxygen heteroatoms in hydrocarbyl ligand |
| CA3257557A1 (en) | 2022-06-02 | 2023-12-07 | Mitsubishi Chemical Corporation | HIGH-PURITY ALKYLETAIN COMPOUNDS AND THEIR MANUFACTURING PROCESSES |
| TW202403845A (zh) * | 2022-06-06 | 2024-01-16 | 美商應用材料股份有限公司 | 用於dram電容器模具圖案化之碳化釕 |
| TW202413383A (zh) | 2022-08-12 | 2024-04-01 | 美商蓋列斯特股份有限公司 | 含不飽和取代基之高純度錫化合物及其製造方法 |
| EP4581039A1 (en) * | 2022-09-02 | 2025-07-09 | Entegris, Inc. | Compositions for extreme ultraviolet lithography and related methods |
| EP4598932A1 (en) | 2022-10-04 | 2025-08-13 | Gelest, Inc. | Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof |
| EP4619828A1 (en) * | 2022-11-15 | 2025-09-24 | Entegris, Inc. | Functionalized organotin precursors and related methods |
| CN116410222B (zh) * | 2023-06-09 | 2023-08-08 | 研峰科技(北京)有限公司 | 一种叔丁基三(二甲氨基)锡烷的合成方法 |
| CN116925130A (zh) * | 2023-07-25 | 2023-10-24 | 苏州源展材料科技有限公司 | 一种四(二甲氨基)锡的制备方法 |
| CN117164618A (zh) * | 2023-09-06 | 2023-12-05 | 苏州欣诺科生物科技有限公司 | 金属配合物前驱体及金属氧化物薄膜的制备方法 |
| WO2025056568A1 (en) | 2023-09-13 | 2025-03-20 | Merck Patent Gmbh | Intramolecular stabilized mono alkyl metal compounds with improved thermal and light stability and their use thereof |
| US20250179101A1 (en) * | 2023-11-30 | 2025-06-05 | Mitsubishi Chemical Corporation | Methods for purifying tin compounds |
| TW202535561A (zh) | 2024-01-05 | 2025-09-16 | 日商三菱化學股份有限公司 | 清潔用於錫化合物之裝置的方法及藉此所獲得之經清潔之裝置 |
| WO2025147417A1 (en) | 2024-01-05 | 2025-07-10 | Mitsubishi Chemical Corporation | Method for cleaning an apparatus for a tin compound and the cleaned apparatus obtained thereby |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE588556A (enExample) * | 1959-03-18 | 1900-01-01 | ||
| DE1121050B (de) * | 1960-12-09 | 1962-01-04 | Dr Dr H C Egon Wiberg | Verfahren zur Herstellung von N-substituierten Zinn- und Organozinnamiden |
| SE7602501L (sv) * | 1975-06-14 | 1976-12-15 | Schering Ag | Medel med baktericid och fungicid verkan |
| JPS61205289A (ja) * | 1985-03-08 | 1986-09-11 | Mitsubishi Metal Corp | スズアルコキシドの製造方法 |
| GB8724049D0 (en) * | 1987-10-14 | 1987-11-18 | Kodak Ltd | Organotin compounds as anionic ionophores |
| DE19730880A1 (de) * | 1997-07-18 | 1999-01-21 | Basf Ag | Verfahren zur selektiven Herstellung von racemischen ansa-Metallocenkomplexen |
| US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
| JP2005298433A (ja) * | 2004-04-15 | 2005-10-27 | Asahi Kasei Chemicals Corp | ジアルキルスズアルコキシド |
| JP2006159090A (ja) * | 2004-12-07 | 2006-06-22 | Asahi Kasei Chemicals Corp | 有機スズアルコキシドの製造方法 |
| KR100700450B1 (ko) * | 2005-03-08 | 2007-03-28 | 주식회사 메카로닉스 | 원자층증착법에 의한 ｉｔｏ박막 제조방법 및 인듐 박막제조방법 |
| JP4798538B2 (ja) * | 2005-09-06 | 2011-10-19 | 株式会社豊田中央研究所 | 膜電極接合体 |
| GB2432364B (en) * | 2005-11-18 | 2009-11-11 | Rohm & Haas Elect Mat | Organometallic compound purification |
| TWI347855B (en) * | 2006-02-23 | 2011-09-01 | Asahi Kasei Chemicals Corp | Method for separating out and recovering dialkyltin dialkoxide |
| KR100954541B1 (ko) * | 2008-03-20 | 2010-04-23 | 한국화학연구원 | 신규의 주석 아미노알콕사이드 화합물 및 그 제조 방법 |
| US8043976B2 (en) * | 2008-03-24 | 2011-10-25 | Air Products And Chemicals, Inc. | Adhesion to copper and copper electromigration resistance |
| KR101489327B1 (ko) * | 2008-05-15 | 2015-02-03 | 삼성전자주식회사 | 물질막의 형성 방법 및 메모리 장치의 제조 방법 |
| FR2940294B1 (fr) * | 2008-12-23 | 2011-02-18 | Michelin Soc Tech | Nouveau systeme d'amorcage pour polymerisation anionique de dienes conjugues, procede de preparation d'elastomeres dieniques. |
| JP2011162542A (ja) * | 2010-02-05 | 2011-08-25 | Rohm & Haas Co | 有機金属化合物を製造する方法 |
| JP2011168576A (ja) * | 2010-02-05 | 2011-09-01 | Rohm & Haas Co | 有機金属化合物を製造する方法 |
| JP6108704B2 (ja) * | 2011-07-13 | 2017-04-05 | ダウ グローバル テクノロジーズ エルエルシー | 有機金属化合物精製 |
| KR101310058B1 (ko) * | 2011-10-06 | 2013-09-24 | 전남대학교산학협력단 | 역구조 유기 태양전지 및 그 제조방법 |
| KR102264419B1 (ko) * | 2014-10-23 | 2021-06-11 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| KR102641862B1 (ko) * | 2015-04-30 | 2024-02-27 | 시스타 케미칼즈 유엘씨 | 화학 상 증착용 유기금속 화합물 |
| WO2017066319A2 (en) * | 2015-10-13 | 2017-04-20 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| CA2920646A1 (en) * | 2016-02-12 | 2017-08-12 | Seastar Chemicals Inc. | Organometallic compound and method |
| KR20180063754A (ko) | 2016-12-02 | 2018-06-12 | 삼성전자주식회사 | 주석 화합물, 그의 합성 방법, ald용 주석 전구체 화합물 및 함주석 물질막의 형성 방법 |
| CA2975104A1 (en) * | 2017-08-02 | 2019-02-02 | Seastar Chemicals Inc. | Organometallic compounds and methods for the deposition of high purity tin oxide |
-
2017
- 2017-08-02 CA CA2975104A patent/CA2975104A1/en not_active Abandoned
-
2018
- 2018-07-31 JP JP2020505377A patent/JP2020530199A/ja active Pending
- 2018-07-31 CN CN201880050021.0A patent/CN111032667B/zh active Active
- 2018-07-31 KR KR1020207006021A patent/KR102715899B1/ko active Active
- 2018-07-31 WO PCT/CA2018/050933 patent/WO2019023797A1/en not_active Ceased
- 2018-07-31 SG SG11202000884RA patent/SG11202000884RA/en unknown
- 2018-08-01 TW TW107126752A patent/TW201920214A/zh unknown
- 2018-08-01 TW TW111123663A patent/TWI872345B/zh active
-
2019
- 2019-06-17 US US16/442,930 patent/US20190337969A1/en not_active Abandoned
-
2020
- 2020-03-30 US US16/834,361 patent/US11643422B2/en active Active
-
2021
- 2021-03-26 US US17/213,328 patent/US20210214379A1/en not_active Abandoned
-
2022
- 2022-12-06 JP JP2022194698A patent/JP7577104B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111032667A (zh) | 2020-04-17 |
| US11643422B2 (en) | 2023-05-09 |
| TW201920214A (zh) | 2019-06-01 |
| WO2019023797A1 (en) | 2019-02-07 |
| US20210214379A1 (en) | 2021-07-15 |
| JP2023036627A (ja) | 2023-03-14 |
| US20200223877A1 (en) | 2020-07-16 |
| JP7577104B2 (ja) | 2024-11-01 |
| TWI872345B (zh) | 2025-02-11 |
| KR20200033946A (ko) | 2020-03-30 |
| KR102715899B1 (ko) | 2024-10-10 |
| JP2020530199A (ja) | 2020-10-15 |
| CN111032667B (zh) | 2024-05-17 |
| TW202237624A (zh) | 2022-10-01 |
| CA2975104A1 (en) | 2019-02-02 |
| US20190337969A1 (en) | 2019-11-07 |
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