CA2975104A1 - Organometallic compounds and methods for the deposition of high purity tin oxide - Google Patents

Organometallic compounds and methods for the deposition of high purity tin oxide Download PDF

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Publication number
CA2975104A1
CA2975104A1 CA2975104A CA2975104A CA2975104A1 CA 2975104 A1 CA2975104 A1 CA 2975104A1 CA 2975104 A CA2975104 A CA 2975104A CA 2975104 A CA2975104 A CA 2975104A CA 2975104 A1 CA2975104 A1 CA 2975104A1
Authority
CA
Canada
Prior art keywords
group
substrate
tin oxide
deposition
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2975104A
Other languages
English (en)
French (fr)
Inventor
Rajesh Odedra
Cunhai Dong
Diana Fabulyak
Wesley P. Graff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seastar Chemicals ULC
Original Assignee
Seastar Chemicals ULC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seastar Chemicals ULC filed Critical Seastar Chemicals ULC
Priority to CA2975104A priority Critical patent/CA2975104A1/en
Priority to KR1020207006021A priority patent/KR102715899B1/ko
Priority to JP2020505377A priority patent/JP2020530199A/ja
Priority to SG11202000884RA priority patent/SG11202000884RA/en
Priority to PCT/CA2018/050933 priority patent/WO2019023797A1/en
Priority to CN201880050021.0A priority patent/CN111032667B/zh
Priority to TW107126752A priority patent/TW201920214A/zh
Priority to TW111123663A priority patent/TWI872345B/zh
Publication of CA2975104A1 publication Critical patent/CA2975104A1/en
Priority to US16/442,930 priority patent/US20190337969A1/en
Priority to US16/834,361 priority patent/US11643422B2/en
Priority to US17/213,328 priority patent/US20210214379A1/en
Priority to JP2022194698A priority patent/JP7577104B2/ja
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
CA2975104A 2017-08-02 2017-08-02 Organometallic compounds and methods for the deposition of high purity tin oxide Abandoned CA2975104A1 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
CA2975104A CA2975104A1 (en) 2017-08-02 2017-08-02 Organometallic compounds and methods for the deposition of high purity tin oxide
CN201880050021.0A CN111032667B (zh) 2017-08-02 2018-07-31 有机金属化合物和所述有机金属化合物的纯化
JP2020505377A JP2020530199A (ja) 2017-08-02 2018-07-31 高純度酸化スズの堆積のための有機金属化合物及び方法
SG11202000884RA SG11202000884RA (en) 2017-08-02 2018-07-31 Organometallic compounds and methods for the deposition of high purity tin oxide
PCT/CA2018/050933 WO2019023797A1 (en) 2017-08-02 2018-07-31 Organometallic compounds and methods for the deposition of high purity tin oxide
KR1020207006021A KR102715899B1 (ko) 2017-08-02 2018-07-31 유기금속 화합물 및 유기금속 화합물의 정제
TW107126752A TW201920214A (zh) 2017-08-02 2018-08-01 有機金屬化合物及用於沉積高純度氧化錫的方法
TW111123663A TWI872345B (zh) 2017-08-02 2018-08-01 有機金屬化合物及此種有機金屬化合物之純化技術
US16/442,930 US20190337969A1 (en) 2017-08-02 2019-06-17 Organometallic compounds and methods for the deposition of high purity tin oxide
US16/834,361 US11643422B2 (en) 2017-08-02 2020-03-30 Organometallic compounds and purification of such organometallic compounds
US17/213,328 US20210214379A1 (en) 2017-08-02 2021-03-26 Organometallic compounds and purification of such organometallic compounds
JP2022194698A JP7577104B2 (ja) 2017-08-02 2022-12-06 有機金属化合物及びその精製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA2975104A CA2975104A1 (en) 2017-08-02 2017-08-02 Organometallic compounds and methods for the deposition of high purity tin oxide

Publications (1)

Publication Number Publication Date
CA2975104A1 true CA2975104A1 (en) 2019-02-02

Family

ID=65229074

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2975104A Abandoned CA2975104A1 (en) 2017-08-02 2017-08-02 Organometallic compounds and methods for the deposition of high purity tin oxide

Country Status (8)

Country Link
US (3) US20190337969A1 (enExample)
JP (2) JP2020530199A (enExample)
KR (1) KR102715899B1 (enExample)
CN (1) CN111032667B (enExample)
CA (1) CA2975104A1 (enExample)
SG (1) SG11202000884RA (enExample)
TW (2) TW201920214A (enExample)
WO (1) WO2019023797A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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WO2021038523A1 (en) * 2019-08-29 2021-03-04 Seastar Chemicals Ulc Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors
US11358975B2 (en) * 2020-07-03 2022-06-14 Entegris, Inc. Process for preparing organotin compounds
WO2023006871A1 (en) * 2021-07-30 2023-02-02 Merck Patent Gmbh Production of diorganotin dihalides

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CA2975104A1 (en) * 2017-08-02 2019-02-02 Seastar Chemicals Inc. Organometallic compounds and methods for the deposition of high purity tin oxide
US10787466B2 (en) 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US11673903B2 (en) 2018-04-11 2023-06-13 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
TWI891088B (zh) 2018-06-21 2025-07-21 美商英培雅股份有限公司 包含溶劑與單烷基錫三烷氧化物之混合物的溶液
KR20240104192A (ko) 2018-11-14 2024-07-04 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
KR20240165480A (ko) 2018-12-20 2024-11-22 램 리써치 코포레이션 레지스트들의 건식 현상
US11498934B2 (en) 2019-01-30 2022-11-15 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
US11966158B2 (en) 2019-01-30 2024-04-23 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
US11609494B2 (en) 2019-04-30 2023-03-21 Samsung Sdi Co., Ltd. Semiconductor photoresist composition and method of forming patterns using the composition
KR102606844B1 (ko) * 2019-04-30 2023-11-27 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
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KR102619719B1 (ko) 2020-05-12 2023-12-28 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
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US12159787B2 (en) * 2020-07-02 2024-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
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JP2023539735A (ja) * 2020-08-25 2023-09-19 インプリア・コーポレイション 反応物の供給に好都合な配位子を持つ有機スズ組成物の製造方法
KR102586112B1 (ko) * 2020-09-14 2023-10-05 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
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KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
US20220199406A1 (en) * 2020-12-17 2022-06-23 Applied Materials, Inc. Vapor deposition of carbon-doped metal oxides for use as photoresists
KR102598259B1 (ko) 2020-12-18 2023-11-02 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102690557B1 (ko) * 2020-12-18 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물, 이의 제조 방법 및 이를 이용한 패턴 형성 방법
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TW202413383A (zh) 2022-08-12 2024-04-01 美商蓋列斯特股份有限公司 含不飽和取代基之高純度錫化合物及其製造方法
EP4581039A1 (en) * 2022-09-02 2025-07-09 Entegris, Inc. Compositions for extreme ultraviolet lithography and related methods
EP4598932A1 (en) 2022-10-04 2025-08-13 Gelest, Inc. Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof
EP4619828A1 (en) * 2022-11-15 2025-09-24 Entegris, Inc. Functionalized organotin precursors and related methods
CN116410222B (zh) * 2023-06-09 2023-08-08 研峰科技(北京)有限公司 一种叔丁基三(二甲氨基)锡烷的合成方法
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CN117164618A (zh) * 2023-09-06 2023-12-05 苏州欣诺科生物科技有限公司 金属配合物前驱体及金属氧化物薄膜的制备方法
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KR20200033946A (ko) 2020-03-30
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JP2020530199A (ja) 2020-10-15
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