CN111032667B - 有机金属化合物和所述有机金属化合物的纯化 - Google Patents

有机金属化合物和所述有机金属化合物的纯化 Download PDF

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Publication number
CN111032667B
CN111032667B CN201880050021.0A CN201880050021A CN111032667B CN 111032667 B CN111032667 B CN 111032667B CN 201880050021 A CN201880050021 A CN 201880050021A CN 111032667 B CN111032667 B CN 111032667B
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CN111032667A (zh
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R·奥德拉
董存海
D·法布里亚克
W·格拉夫
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Seastar Chemicals ULC
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
CN201880050021.0A 2017-08-02 2018-07-31 有机金属化合物和所述有机金属化合物的纯化 Active CN111032667B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA2975104 2017-08-02
CA2975104A CA2975104A1 (en) 2017-08-02 2017-08-02 Organometallic compounds and methods for the deposition of high purity tin oxide
PCT/CA2018/050933 WO2019023797A1 (en) 2017-08-02 2018-07-31 Organometallic compounds and methods for the deposition of high purity tin oxide

Publications (2)

Publication Number Publication Date
CN111032667A CN111032667A (zh) 2020-04-17
CN111032667B true CN111032667B (zh) 2024-05-17

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Country Link
US (3) US20190337969A1 (enExample)
JP (2) JP2020530199A (enExample)
KR (1) KR102715899B1 (enExample)
CN (1) CN111032667B (enExample)
CA (1) CA2975104A1 (enExample)
SG (1) SG11202000884RA (enExample)
TW (2) TW201920214A (enExample)
WO (1) WO2019023797A1 (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2975104A1 (en) * 2017-08-02 2019-02-02 Seastar Chemicals Inc. Organometallic compounds and methods for the deposition of high purity tin oxide
US10787466B2 (en) 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US11673903B2 (en) 2018-04-11 2023-06-13 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
TWI891088B (zh) 2018-06-21 2025-07-21 美商英培雅股份有限公司 包含溶劑與單烷基錫三烷氧化物之混合物的溶液
KR20240104192A (ko) 2018-11-14 2024-07-04 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
KR20240165480A (ko) 2018-12-20 2024-11-22 램 리써치 코포레이션 레지스트들의 건식 현상
US11498934B2 (en) 2019-01-30 2022-11-15 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
US11966158B2 (en) 2019-01-30 2024-04-23 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
US11609494B2 (en) 2019-04-30 2023-03-21 Samsung Sdi Co., Ltd. Semiconductor photoresist composition and method of forming patterns using the composition
KR102606844B1 (ko) * 2019-04-30 2023-11-27 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20220052968A (ko) * 2019-08-29 2022-04-28 시스타 케미칼즈 유엘씨 고순도 산화주석의 증착을 위한 유기금속 화합물 및 산화주석 필름의 건조 에칭 및 증착 반응기
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
KR102573327B1 (ko) 2020-04-02 2023-08-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102619719B1 (ko) 2020-05-12 2023-12-28 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
US12159787B2 (en) * 2020-07-02 2024-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
EP4175963A4 (en) * 2020-07-03 2025-10-29 Entegris Inc PROCESS FOR THE PREPARATION OF ORGANOETAIN COMPOUNDS
US20230045336A1 (en) 2020-07-07 2023-02-09 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
JP2023539735A (ja) * 2020-08-25 2023-09-19 インプリア・コーポレイション 反応物の供給に好都合な配位子を持つ有機スズ組成物の製造方法
KR102586112B1 (ko) * 2020-09-14 2023-10-05 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US12153346B2 (en) * 2020-09-30 2024-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist for semiconductor fabrication
KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
US20220199406A1 (en) * 2020-12-17 2022-06-23 Applied Materials, Inc. Vapor deposition of carbon-doped metal oxides for use as photoresists
KR102598259B1 (ko) 2020-12-18 2023-11-02 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102690557B1 (ko) * 2020-12-18 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물, 이의 제조 방법 및 이를 이용한 패턴 형성 방법
EP4284807A4 (en) * 2021-01-28 2025-01-15 Entegris, Inc. PROCESS FOR THE PRODUCTION OF ORGANOTIN COMPOUNDS
US11697660B2 (en) * 2021-01-29 2023-07-11 Entegris, Inc. Process for preparing organotin compounds
KR20230148424A (ko) * 2021-02-23 2023-10-24 램 리써치 코포레이션 할로겐-함유 유기주석 포토레지스트 및 지방족-함유 유기주석 포토레지스트 및 이의 방법들
WO2022266421A1 (en) * 2021-06-18 2022-12-22 Entegris, Inc. Process for preparing organotin compounds
US20220411446A1 (en) * 2021-06-28 2022-12-29 Inpria Corporation Deuterated organotin compounds, methods of synthesis and radiation patterning
WO2023006871A1 (en) * 2021-07-30 2023-02-02 Merck Patent Gmbh Production of diorganotin dihalides
US11459656B1 (en) 2021-09-13 2022-10-04 Gelest, Inc Method and precursors for producing oxostannate rich films
EP4405755A4 (en) * 2021-09-24 2025-10-22 Inpria Corp HIGH-RESOLUTION LATENT IMAGE PROCESSING, CONTRAST ENHANCEMENT AND THERMAL DEVELOPMENT; PROCESSING APPARATUS
EP4437160A1 (en) 2021-11-24 2024-10-02 Entegris, Inc. Organotin precursor compounds
CN113956283B (zh) * 2021-11-24 2023-12-19 云南锡业锡化工材料有限责任公司 一种两步法合成低电导率二丁基氧化锡的方法
US11827659B2 (en) * 2022-03-31 2023-11-28 Feng Lu Organometallic tin compounds as EUV photoresist
EP4526734A1 (en) * 2022-05-18 2025-03-26 Inpria Corporation Radiation sensitive organotin compositions having oxygen heteroatoms in hydrocarbyl ligand
CA3257557A1 (en) 2022-06-02 2023-12-07 Mitsubishi Chemical Corporation HIGH-PURITY ALKYLETAIN COMPOUNDS AND THEIR MANUFACTURING PROCESSES
TW202403845A (zh) * 2022-06-06 2024-01-16 美商應用材料股份有限公司 用於dram電容器模具圖案化之碳化釕
TW202413383A (zh) 2022-08-12 2024-04-01 美商蓋列斯特股份有限公司 含不飽和取代基之高純度錫化合物及其製造方法
EP4581039A1 (en) * 2022-09-02 2025-07-09 Entegris, Inc. Compositions for extreme ultraviolet lithography and related methods
EP4598932A1 (en) 2022-10-04 2025-08-13 Gelest, Inc. Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof
EP4619828A1 (en) * 2022-11-15 2025-09-24 Entegris, Inc. Functionalized organotin precursors and related methods
CN116410222B (zh) * 2023-06-09 2023-08-08 研峰科技(北京)有限公司 一种叔丁基三(二甲氨基)锡烷的合成方法
CN116925130A (zh) * 2023-07-25 2023-10-24 苏州源展材料科技有限公司 一种四(二甲氨基)锡的制备方法
CN117164618A (zh) * 2023-09-06 2023-12-05 苏州欣诺科生物科技有限公司 金属配合物前驱体及金属氧化物薄膜的制备方法
WO2025056568A1 (en) 2023-09-13 2025-03-20 Merck Patent Gmbh Intramolecular stabilized mono alkyl metal compounds with improved thermal and light stability and their use thereof
US20250179101A1 (en) * 2023-11-30 2025-06-05 Mitsubishi Chemical Corporation Methods for purifying tin compounds
TW202535561A (zh) 2024-01-05 2025-09-16 日商三菱化學股份有限公司 清潔用於錫化合物之裝置的方法及藉此所獲得之經清潔之裝置
WO2025147417A1 (en) 2024-01-05 2025-07-10 Mitsubishi Chemical Corporation Method for cleaning an apparatus for a tin compound and the cleaned apparatus obtained thereby

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE588556A (enExample) * 1959-03-18 1900-01-01
DE1121050B (de) * 1960-12-09 1962-01-04 Dr Dr H C Egon Wiberg Verfahren zur Herstellung von N-substituierten Zinn- und Organozinnamiden
SE7602501L (sv) * 1975-06-14 1976-12-15 Schering Ag Medel med baktericid och fungicid verkan
JPS61205289A (ja) * 1985-03-08 1986-09-11 Mitsubishi Metal Corp スズアルコキシドの製造方法
GB8724049D0 (en) * 1987-10-14 1987-11-18 Kodak Ltd Organotin compounds as anionic ionophores
DE19730880A1 (de) * 1997-07-18 1999-01-21 Basf Ag Verfahren zur selektiven Herstellung von racemischen ansa-Metallocenkomplexen
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
JP2005298433A (ja) * 2004-04-15 2005-10-27 Asahi Kasei Chemicals Corp ジアルキルスズアルコキシド
JP2006159090A (ja) * 2004-12-07 2006-06-22 Asahi Kasei Chemicals Corp 有機スズアルコキシドの製造方法
KR100700450B1 (ko) * 2005-03-08 2007-03-28 주식회사 메카로닉스 원자층증착법에 의한 ｉｔｏ박막 제조방법 및 인듐 박막제조방법
JP4798538B2 (ja) * 2005-09-06 2011-10-19 株式会社豊田中央研究所 膜電極接合体
GB2432364B (en) * 2005-11-18 2009-11-11 Rohm & Haas Elect Mat Organometallic compound purification
TWI347855B (en) * 2006-02-23 2011-09-01 Asahi Kasei Chemicals Corp Method for separating out and recovering dialkyltin dialkoxide
KR100954541B1 (ko) * 2008-03-20 2010-04-23 한국화학연구원 신규의 주석 아미노알콕사이드 화합물 및 그 제조 방법
US8043976B2 (en) * 2008-03-24 2011-10-25 Air Products And Chemicals, Inc. Adhesion to copper and copper electromigration resistance
KR101489327B1 (ko) * 2008-05-15 2015-02-03 삼성전자주식회사 물질막의 형성 방법 및 메모리 장치의 제조 방법
FR2940294B1 (fr) * 2008-12-23 2011-02-18 Michelin Soc Tech Nouveau systeme d'amorcage pour polymerisation anionique de dienes conjugues, procede de preparation d'elastomeres dieniques.
JP2011162542A (ja) * 2010-02-05 2011-08-25 Rohm & Haas Co 有機金属化合物を製造する方法
JP2011168576A (ja) * 2010-02-05 2011-09-01 Rohm & Haas Co 有機金属化合物を製造する方法
JP6108704B2 (ja) * 2011-07-13 2017-04-05 ダウ グローバル テクノロジーズ エルエルシー 有機金属化合物精製
KR101310058B1 (ko) * 2011-10-06 2013-09-24 전남대학교산학협력단 역구조 유기 태양전지 및 그 제조방법
KR102264419B1 (ko) * 2014-10-23 2021-06-11 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
KR102641862B1 (ko) * 2015-04-30 2024-02-27 시스타 케미칼즈 유엘씨 화학 상 증착용 유기금속 화합물
WO2017066319A2 (en) * 2015-10-13 2017-04-20 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
CA2920646A1 (en) * 2016-02-12 2017-08-12 Seastar Chemicals Inc. Organometallic compound and method
KR20180063754A (ko) 2016-12-02 2018-06-12 삼성전자주식회사 주석 화합물, 그의 합성 방법, ald용 주석 전구체 화합물 및 함주석 물질막의 형성 방법
CA2975104A1 (en) * 2017-08-02 2019-02-02 Seastar Chemicals Inc. Organometallic compounds and methods for the deposition of high purity tin oxide

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WO2019023797A1 (en) 2019-02-07
US20210214379A1 (en) 2021-07-15
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US20200223877A1 (en) 2020-07-16
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TWI872345B (zh) 2025-02-11
KR20200033946A (ko) 2020-03-30
KR102715899B1 (ko) 2024-10-10
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CA2975104A1 (en) 2019-02-02
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