JP2019501528A - 五置換ジシランを使用するケイ素含有フィルムの蒸着 - Google Patents
五置換ジシランを使用するケイ素含有フィルムの蒸着 Download PDFInfo
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- JP2019501528A JP2019501528A JP2018530071A JP2018530071A JP2019501528A JP 2019501528 A JP2019501528 A JP 2019501528A JP 2018530071 A JP2018530071 A JP 2018530071A JP 2018530071 A JP2018530071 A JP 2018530071A JP 2019501528 A JP2019501528 A JP 2019501528A
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- silicon
- film
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 148
- 239000010703 silicon Substances 0.000 title claims abstract description 145
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 81
- -1 pentasubstituted disilanes Chemical class 0.000 title abstract description 105
- 238000007740 vapor deposition Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 98
- 238000000151 deposition Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000000203 mixture Substances 0.000 claims description 188
- 239000000376 reactant Substances 0.000 claims description 67
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 61
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 61
- 229910052801 chlorine Inorganic materials 0.000 claims description 56
- 229910052760 oxygen Inorganic materials 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 19
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 19
- VEYJKODKHGEDMC-UHFFFAOYSA-N dichloro(trichlorosilyl)silicon Chemical compound Cl[Si](Cl)[Si](Cl)(Cl)Cl VEYJKODKHGEDMC-UHFFFAOYSA-N 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims 1
- RSMKAORBGALEHE-UHFFFAOYSA-N N-[dimethylamino-[tris(dimethylamino)silyl]silyl]-N-methylmethanamine Chemical compound CN(C)[SiH](N(C)C)[Si](N(C)C)(N(C)C)N(C)C RSMKAORBGALEHE-UHFFFAOYSA-N 0.000 abstract description 12
- 238000005019 vapor deposition process Methods 0.000 abstract description 3
- 239000000460 chlorine Substances 0.000 description 97
- 238000000231 atomic layer deposition Methods 0.000 description 76
- 230000008569 process Effects 0.000 description 70
- 230000008021 deposition Effects 0.000 description 61
- 239000002243 precursor Substances 0.000 description 47
- 229910052794 bromium Inorganic materials 0.000 description 40
- 229910052740 iodine Inorganic materials 0.000 description 39
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 229910004298 SiO 2 Inorganic materials 0.000 description 31
- 229910052739 hydrogen Inorganic materials 0.000 description 30
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 29
- 229910052752 metalloid Inorganic materials 0.000 description 28
- 150000002738 metalloids Chemical class 0.000 description 28
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 27
- 238000002485 combustion reaction Methods 0.000 description 24
- 238000009826 distribution Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 20
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 238000010926 purge Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 15
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- 125000000217 alkyl group Chemical group 0.000 description 14
- 238000005137 deposition process Methods 0.000 description 14
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 14
- 239000011261 inert gas Substances 0.000 description 13
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical group Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 13
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 11
- 150000003254 radicals Chemical class 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 150000004820 halides Chemical class 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000197 pyrolysis Methods 0.000 description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 239000003446 ligand Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- DHVPLDUEYIAHOM-UHFFFAOYSA-N [SiH3][SiH](Br)Br Chemical group [SiH3][SiH](Br)Br DHVPLDUEYIAHOM-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- FXOCTISBMXDWGP-UHFFFAOYSA-N dichloro(silyl)silane Chemical group [SiH3][SiH](Cl)Cl FXOCTISBMXDWGP-UHFFFAOYSA-N 0.000 description 6
- SWHQGSHDNRXLCP-UHFFFAOYSA-N diiodo(silyl)silane Chemical group I[SiH]([SiH3])I SWHQGSHDNRXLCP-UHFFFAOYSA-N 0.000 description 6
- ZHQUEXQAGVKLPP-UHFFFAOYSA-N diiodosilyl(triiodo)silane Chemical group I[SiH]([Si](I)(I)I)I ZHQUEXQAGVKLPP-UHFFFAOYSA-N 0.000 description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical group Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- OBUKPIPBHQGWTR-UHFFFAOYSA-N difluorosilyl(trifluoro)silane Chemical group F[SiH](F)[Si](F)(F)F OBUKPIPBHQGWTR-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- SCKGSKNTVOKXKZ-UHFFFAOYSA-N tribromo(dibromosilyl)silane Chemical group Br[SiH](Br)[Si](Br)(Br)Br SCKGSKNTVOKXKZ-UHFFFAOYSA-N 0.000 description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical group C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 101000871498 Homo sapiens m7GpppX diphosphatase Proteins 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- MIQYPPGTNIFAPO-CABCVRRESA-N PS(6:0/6:0) Chemical compound CCCCCC(=O)OC[C@@H](OC(=O)CCCCC)COP(O)(=O)OC[C@H](N)C(O)=O MIQYPPGTNIFAPO-CABCVRRESA-N 0.000 description 3
- CIBUDKJODXACBL-UHFFFAOYSA-N [SiH3][SiH2]Br Chemical group [SiH3][SiH2]Br CIBUDKJODXACBL-UHFFFAOYSA-N 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- FXMNVBZEWMANSQ-UHFFFAOYSA-N chloro(silyl)silane Chemical group [SiH3][SiH2]Cl FXMNVBZEWMANSQ-UHFFFAOYSA-N 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 125000005265 dialkylamine group Chemical group 0.000 description 3
- ILZIHGWXTARXAO-UHFFFAOYSA-N dichloro(dichlorosilylmethyl)silane Chemical group Cl[SiH](Cl)C[SiH](Cl)Cl ILZIHGWXTARXAO-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- XUGPYSXPMMKZGO-UHFFFAOYSA-N iodo(silyl)silane Chemical group [SiH3][SiH2]I XUGPYSXPMMKZGO-UHFFFAOYSA-N 0.000 description 3
- 102100033718 m7GpppX diphosphatase Human genes 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- MSQITEWLCPTJBF-UHFFFAOYSA-N trichloro-[dichloro-[dichloro(trichlorosilyl)silyl]silyl]silane Chemical group Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl MSQITEWLCPTJBF-UHFFFAOYSA-N 0.000 description 3
- APLLVYZLAPKPFW-UHFFFAOYSA-N trichloro-[dichloro-[dichloro-[dichloro(trichlorosilyl)silyl]silyl]silyl]silane Chemical group Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl APLLVYZLAPKPFW-UHFFFAOYSA-N 0.000 description 3
- CIEKVFFSPFYSHN-UHFFFAOYSA-N triiodo(triiodosilyl)silane Chemical group I[Si](I)(I)[Si](I)(I)I CIEKVFFSPFYSHN-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical compound C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000998 batch distillation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- VWBWKXZFNDNPLX-UHFFFAOYSA-N chloro(ethylsilylsilyl)silane Chemical group Cl[SiH2][SiH2][SiH2]CC VWBWKXZFNDNPLX-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical group Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- RUSXXJKVMARGOF-UHFFFAOYSA-N cyclohexane;heptane Chemical compound C1CCCCC1.CCCCCCC RUSXXJKVMARGOF-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical class [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
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- 235000019253 formic acid Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical group CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 2
- NGBPGLNJSMULPS-UHFFFAOYSA-N n-[[chloro-bis(dimethylamino)silyl]-bis(dimethylamino)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](Cl)(N(C)C)[Si](N(C)C)(N(C)C)N(C)C NGBPGLNJSMULPS-UHFFFAOYSA-N 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
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- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical group CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 2
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 2
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
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- ABDDAHLAEXNYRC-UHFFFAOYSA-N trichloro(trichlorosilylmethyl)silane Chemical group Cl[Si](Cl)(Cl)C[Si](Cl)(Cl)Cl ABDDAHLAEXNYRC-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/36—Carbonitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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Abstract
【選択図】図13
Description
本出願は、全ての目的に関して、参照によって全体的に本明細書に組み込まれる、2015年12月28日出願の米国特許出願第14/979,816号明細書の利益を請求する。
●五置換ジシラン前駆体が、ペンタクロロジシラン(PCDSまたはSi2HCl5)である;
●五置換ジシラン前駆体が、ペンタヨードジシラン(Si2HI5)である;
●五置換ジシラン前駆体が、ペンタブロモジシラン(Si2HBr5)である;
●五置換ジシラン前駆体が、ペンタフルオロジシラン(Si2HF5)である;
●五置換ジシラン前駆体が、ペンタキス(ジメチルアミノ)ジシラン[Si2H(NMe2)5]である;
●Si含有フィルム形成組成物が、約99%w/w〜約100%w/wの五置換ジシラン前駆体を含んでなる;
●Si含有フィルム形成組成物が、約95%w/w〜約100%w/wの五置換ジシラン前駆体を含んでなる;
●Si含有フィルム形成組成物が、約0%w/w〜約5%w/wの不純物を含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約2.0%w/wの不純物を含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの不純物を含んでなる;
●不純物が、式Si2HxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x=0、2または3であり、かつx+y=6である)を有する六、四および三置換ジシラン;式SiX4(式中、X=Cl、Br、IまたはNR2であり、かつR=HまたはC1−C4アルキル基である)を有する四置換シラン;式SiHX3(式中、X=Cl、Br、IまたはNR2であり、かつR=HまたはC1−C4アルキル基)を有する三置換シラン;式Si3HxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x+y=8であり、かつx=1〜6である)を有する部分的に置換されたトリシラン;式SiHX2−O−SiX3(式中、X=Cl、Br、IまたはNR2であり、かつR=HまたはC1〜C4アルキル基である)を有するシロキサン;式HxXySi−O−SiHxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x=0、2または3であり、かつx+y=3である)を有するシロキサン;式SiHxXy−O−SiHxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基、水素であり、x+y=3であり、かつx=0または1である)を有するシロキサン;式HxXySi−O−(Si2HaXb)(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x+y=3であり、a+b=6であり、x=1〜3であり、かつa=0、2または3である)を有するシロキサン;式HxXySi−O−SiHaXb−O−SiHxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x+y=3であり、a+b=2であり、x=1〜3であり、かつa=0〜2である)を有するシロキサン;ヨウ素;臭素;塩素;ジメチルアミンまたはエチルアミンなどのジアルキルアミン;THF;エーテル;ペンタン;ヘキサン;シクロヘキサン;ヘプタン;ベンゼン;トルエン;またはその組合せを含む;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式Si2X6(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1〜C4アルキル基である)を有する六置換ジシランを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式Si2H2X4(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基である)を有する四置換ジシランを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式Si2H3X3(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基である)を有する三置換ジシランを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式SiX4(式中、X=Cl、Br、IまたはNR2であり、かつR=HまたはC1−C4アルキル基である)を有する四置換シランを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式SiHX3(式中、X=Cl、Br、IまたはNR2であり、かつR=HまたはC1−C4アルキル基である)を有する三置換シランを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式Si3HxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x+y=8であり、かつx=1〜6である)を有する部分的に置換されたトリシランを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式SiHX2−O−SiX3(式中、X=Cl、Br、IまたはNR2であり、かつR=HまたはC1−C4アルキル基である)を有するシロキサンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式HxXySi−O−SiHxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x=0、2または3であり、かつx+y=3である)を有するシロキサンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式SiHxXy−O−SiHxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基、水素であり、x+y=3であり、かつx=0または1である)を有するシロキサンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式HxXySi−O−(Si2HaXb)(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x+y=3であり、a+b=5であり、x=1〜3であり、かつa=0、2または3である)を有するシロキサンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、式HxXySi−O−SiHaXb−O−SiHxXy(式中、X=Cl、Br、IまたはNR2であり、R=HまたはC1−C4アルキル基であり、x+y=3であり、a+b=2であり、x=1〜3であり、かつa=0〜2である)を有するシロキサンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの、ジメチルアミンまたはエチルアミンなどのジアルキルアミンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのTHFを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのエーテルを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのペンタンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのヘキサンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのシクロヘキサンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのヘプタンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのベンゼンを含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wのトルエンを含んでなる;
●Si含有フィルム形成組成物が、約0ppbw〜約1ppmwの金属不純物を含んでなる;
●Si含有フィルム形成組成物が、約0ppbw〜約500ppbwの金属不純物を含んでなる;
●蒸着プロセスが、原子層析出(ALD)プロセスである;
●蒸着プロセスが、化学蒸着(CVD)プロセスである;
●反応器中に酸素含有反応物を導入することをさらに含んでなる;
●酸素含有反応物が、O2、O3、H2O、H2O2、NO、N2O、NO2、カルボン酸、ギ酸、酢酸、プロピオン酸、その酸素含有ラジカル、またはその混合物である;
●酸素含有反応物が、O2、O3、H2O、その酸素含有ラジカル、またはその混合物である;
●酸素含有反応物が、O2、O3、その酸素含有ラジカル、またはその混合物である;
●酸素含有反応物が、O3およびO2の混合物である;
●混合物が、少なくとも5%v/vのO3を含んでなる;
●酸素含有反応物が、O2中O3の7.2%v/v混合物である;
●ケイ素含有フィルムが、酸化ケイ素である;
●ケイ素含有フィルムが、希釈HF溶液(0.5〜1%のHF)を使用する溶着によって析出された酸化ケイ素のウェットエッチレートの10倍以下のウェットエッチレートを有する;
●ケイ素含有フィルムが、約450℃〜約800℃の範囲の温度において析出される;
●ケイ素含有フィルムが、約500℃〜約800℃の範囲の温度において析出される;
●ケイ素含有フィルムが、約500℃〜約700℃の範囲の温度において析出される;
●ケイ素含有フィルムが、プラズマを使用することなく析出される;
●熱ALDプロセスが、約550℃〜約600℃の範囲の温度において酸化ケイ素フィルムを析出する;
●熱ALDプロセスが、約100℃〜約400℃の範囲の温度において酸化ケイ素フィルムを析出する;
●ケイ素含有フィルムが、約0.75トル(100Pa)〜約1.25トル(167Pa)の範囲の圧力において析出される;
●プラズマALDプロセスが、約室温〜約400℃の範囲の温度において酸化ケイ素フィルムを析出する;
●ケイ素含有フィルムが、約0原子%〜約5原子%の炭素を含有する;
●ケイ素含有フィルムが、約0原子%〜約2.5原子%の炭素を含有する;
●ケイ素含有フィルムが、約0原子%〜約1原子%の炭素を含有する;
●ケイ素含有フィルムが、約0原子%〜約1原子%の窒素を含有する;
●ケイ素含有フィルムが、約0原子%〜約1原子%の塩素を含有する;
●酸化ケイ素フィルムが、1:7のアスペクト比に関して、約70%〜約100%の段差被覆を示す;
●酸化ケイ素フィルムが、1:20のアスペクト比に関して、約70%〜約100%の段差被覆を示す;
●酸化ケイ素フィルムが、1:7のアスペクト比に関して、約90%〜約100%の段差被覆を示す;
●酸化ケイ素フィルムが、1:20のアスペクト比に関して、約90%〜約100%の段差被覆を示す;
●基体が、約10:1〜約100:1の範囲のアスペクト比を有するホールまたはトレンチを含んでなる;
●基体が、約10:1〜約40:1の範囲のアスペクト比を有するホールまたはトレンチを含んでなる;
●ケイ素含有フィルムが、約80%〜約100%の範囲のホールまたはトレンチの段差被覆を得る;
●ケイ素含有フィルムが、約0.75Å(0.075nm)〜約1Å(0.1nm)の範囲のサイクルあたりの成長を有する;
●反応器中に窒素含有反応物を導入することをさらに含んでなる;
●窒素含有反応物が、NH3、N2H4、N(SiH3)3、N(CH3)H2、N(C2H5)H2、N(CH3)2H、N(C2H5)2H、N(CH3)3、N(C2H5)3、(SiMe3)2NH、(CH3)HNNH2、(CH3)2NNH2、その窒素含有ラジカル種、およびその混合物である;
●窒素含有反応物が、NH3である;
●ケイ素含有フィルムが、窒化ケイ素である;
●窒化ケイ素フィルムが、約450℃〜約650℃の範囲の温度において析出される;
●窒化ケイ素フィルムが、約0.1トル(13Pa)〜約100トル(13,332Pa)の範囲の圧力において析出される;
●窒化ケイ素フィルムが、約4.75トル(633Pa)〜約5.25トル(700Pa)の範囲の圧力において析出される;
●窒化ケイ素フィルムが、プラズマを使用することなく析出される;
●窒化ケイ素フィルムが、約0.3Å(0.03nm)〜約2Å(0.2nm)の範囲のサイクルあたりの成長を有する;
●ケイ素含有フィルムが約1Å(0.1nm)〜約2Å(0.2nm)の範囲のサイクルあたりの成長を有する;
●窒化ケイ素フィルムが、約1.7〜約2.2の範囲の屈折率を有する;
●窒化ケイ素フィルムが、約1.8〜約2.1の範囲の屈折率を有する;
●窒化ケイ素フィルムが、約2.0〜約2.1の範囲の屈折率を有する;
●反応器中に、アミン、アルキルアミノシランまたはジシラザンを導入することをさらに含んでなる;
●アミンがアンモニアである;
●アルキルアミノシランが、ビス(ジエチルアミノ)シランである;
●アルキルアミノシランが、トリス(ジメチルアミノ)シランである;
●ジシラザンが、ヘキサメチルジシラザンである;
●ケイ素含有フィルムが、炭素ドープされた窒化ケイ素フィルムである;
●炭素ドープされた窒化ケイ素フィルムが、約5原子%〜約40原子%の炭素濃度を有する;
●炭素ドープされた窒化ケイ素フィルムが、約20原子%〜約60原子%の窒素濃度を有する;
●炭素ドープされた窒化ケイ素フィルムが、約0原子%〜約5原子%の酸素濃度を有する;
●プロセスが、プラズマ強化原子層析出(PEALD)プロセスである;
●反応器中に窒素含有反応物を導入することをさらに含んでなる;
●窒素含有反応物が、N2、NH3、N2H4、N(SiH3)3、N(CH3)H2、N(C2H5)H2、N(CH3)2H、N(C2H5)2H、N(CH3)3、N(C2H5)3、(SiMe3)2NH、(CH3)HNNH2、(CH3)2NNH2、N2およびH2の混合物、その窒素含有ラジカル種、ならびにその混合物である;
●窒素含有反応物が、NH3、N2、N2およびH2の混合物、ならびにその混合物である;
●N2およびH2の混合物が、約0%v/v〜約70%v/vのH2を含有する;
●N2およびH2の混合物が、約50%v/vのH2を含有する;
●ケイ素含有フィルムが、炭素ドープされた窒化ケイ素フィルムである;
●PEALDプロセスが、約100℃〜約350℃の範囲の温度において、炭素ドープされた窒化ケイ素フィルムを析出する;
●炭素ドープされた窒化ケイ素フィルムが、約1.6〜約2.1の範囲の屈折率を有する;
●炭素ドープされた窒化ケイ素フィルムが、約1原子%〜約15原子%の範囲の炭素濃度を有する;
●ケイ素含有フィルムが、非晶質または多結晶質ケイ素フィルムである;
●非晶質または多結晶質ケイ素フィルムが、約550℃〜約800℃の範囲の温度において析出される;
●非晶質または多結晶質ケイ素フィルムが、約0.1トル(13Pa)〜約100トル(13,332Pa)の範囲の圧力において析出される;
●反応器中に不活性気体を導入することをさらに含んでなる;
●反応器中に還元気体を導入することをさらに含んでなる;
●ケイ素フィルムが、約0原子%〜約5原子%の炭素を含有する;
●ケイ素フィルムが、約0原子%〜約1原子%の窒素を含有する;
●ケイ素フィルムが、約0原子%〜約1原子%の塩素を含有する;
●ケイ素フィルムが、非晶質ケイ素フィルムである;
●ケイ素フィルムが、多結晶質ケイ素フィルムである;
●基体が、約1:10〜約1:100の範囲のアスペクト比を有するホールまたはトレンチを含んでなる;
●基体が、約1:10〜約1:40の範囲のアスペクト比を有するホールまたはトレンチを含んでなる;あるいは
●ケイ素フィルムが、約80%〜約100%の範囲のホールまたはトレンチの段差被覆を得る。
●Si含有フィルム形成組成物が、約99%w/w〜約100%w/wのハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、約95%w/w〜約100%w/wのハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、約0%w/w〜約5%w/wの不純物を含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約2.0%w/wの不純物を含んでなる;
●Si含有フィルム形成組成物が、約0.0%w/w〜約1.0%w/wの不純物を含んでなる;
●不純物が、六置換ジシラン;アルキルアミン;ジアルキルアミン;アルキルイミン;ヨードシラン;アミノシラン;ヨウ化リチウム,ナトリウム,またはカリウム;ヨウ素;THF;エーテル;ペンタン;シクロヘキサン;ヘプタン;ベンゼン;トルエン;ハロゲン化金属化合物を含む;
●Si含有フィルム形成組成物が、約0ppbw〜約1ppmwの金属不純物を含んでなる;
●Si含有フィルム形成組成物が、約0ppbw〜約500ppbwの金属不純物を含んでなる;
●ハロゲン化ケイ素が、少なくとも1つのハロゲン原子を含有する;
●ハロゲン化ケイ素が、少なくとも1つのケイ素−ハロゲン結合を含有する;
●ハロゲン化ケイ素が、式SiX4(式中、各Xは、独立して、Cl、Br、I、HまたはRであり、かつRは脂肪族基である)を有する;
●ハロゲン化ケイ素が、SiCl3Hである;
●ハロゲン化ケイ素が、SiH2Cl2である;
●ハロゲン化ケイ素が、SiH3Clである;
●ハロゲン化ケイ素が、SiI2H2である;
●ハロゲン化ケイ素が、SiHMeI2である;
●ハロゲン化ケイ素が、SiMe2I2である;
●ハロゲン化ケイ素が、SiHxCl3−x(CH2Cl)(式中、x=0〜3である)である;
●ハロゲン化ケイ素が、SiH3(CH2Cl)である;
●ハロゲン化ケイ素が、SiH2Cl(CH2Cl)である;
●ハロゲン化ケイ素が、SiHCl2(CH2Cl)である;
●ハロゲン化ケイ素が、SiCl3(CH2Cl)である;
●ハロゲン化ケイ素が、式Si2X6(式中、各Xは、独立して、Cl、Br、IまたはHである)を有する;
●ハロゲン化ケイ素が、ペンタクロロジシランである;
●ハロゲン化ケイ素が、ペンタブロモジシランである;
●ハロゲン化ケイ素が、ペンタヨードジシランである;
●ハロゲン化ケイ素が、ペンタフルオロジシランである;
●ハロゲン化ケイ素が、ヘキサクロロジシラン;
●ハロゲン化ケイ素が、ヘキサヨードジシランである;
●ハロゲン化ケイ素が、モノクロロジシランである;
●ハロゲン化ケイ素が、モノブロモジシランである;
●ハロゲン化ケイ素が、モノヨードジシランである;
●ハロゲン化ケイ素が、1,1−ジクロロジシラン[Cl2HSi−SiH3]である;
●ハロゲン化ケイ素が、ジブロモジシラン[H2BrSi−SiBrH2]である;
●ハロゲン化ケイ素が、ジヨードジシラン[H2ISi−SiIH2]である;
●ハロゲン化ケイ素が、ジクロロジシラン[H3Si−SiHCl2]である;
●ハロゲン化ケイ素が、ジブロモジシラン[H3Si−SiHBr2]である;
●ハロゲン化ケイ素が、ジヨードジシラン[H3Si−SiHI2]である;
●ハロゲン化ケイ素が、式X3Si−CH2−SiX3(式中、各Xは、独立して、Cl、Br、IまたはHである)を有する;
●ハロゲン化ケイ素が、ビス(ジクロロシリル)メタン[(SiClH2)2CH2]である;
●ハロゲン化ケイ素が、モノクロロトリシラペンタン[H3Si−CH2−SiH2Cl]である;
●ハロゲン化ケイ素が、式X3Si−CH2−CH2−SiX3(式中、各Xは、独立して、Cl、Br、IまたはHである)を有する;
●ハロゲン化ケイ素が、式X3Si−CH2−SiX2−CH2−SiX3(式中、各Xは、独立して、ClまたはHであるが、ただし少なくとも1つの末端XはClである)を有する;
●ハロゲン化ケイ素が、式Cl3Si−CH2−SiCl2−CH2−SiCl3を有する;
●ハロゲン化ケイ素が、式H3Si−CH2−SiH2−CH2−SiClH2を有する;
●ハロゲン化ケイ素が、式(−SiX2−CH2−)3(式中、各Xは、独立して、Cl、BrまたはIである)を有する;
●ハロゲン化ケイ素が、式(−SiHX−CH2−)3(式中、各Xは、独立して、Cl、BrまたはIである)を有する;
●ハロゲン化ケイ素が、オクタクロロトリシラン(OCTS)である;
●ハロゲン化ケイ素が、デカクロロテトラシラン(Si4Cl10)である;
●ハロゲン化ケイ素が、ドデカクロロペンタシラン(DCPSまたはSi5Cl12)である;
●アルキル置換金属またはメタロイドが、式AlR3(式中、各Rは、独立して、H、Me、Et、nPr、iPr、nBu、iBuまたはR2であるが、ただしR3=H3である場合、分子は、アミンまたはボロヒドリドによって付加されてもよい)を有する;
●アルキル置換金属またはメタロイドが、トリエチルアルミニウムである;
●アルキル置換金属またはメタロイドが、トリメチルアルミニウムである;
●アルキル置換金属またはメタロイドが、AlH3・NH3である;
●アルキル置換金属またはメタロイドが、式BR3(式中、各Rは、独立して、アルキルまたはアリル基である)を有する;
●アルキル置換金属またはメタロイドが、トリエチルホウ素である;
●アルキル置換金属またはメタロイドが、トリメチルホウ素である;
●アルキル置換金属またはメタロイドが、式AlClR2(式中、各Rは、独立して、H、Me、Et、nPr、iPr、nBuまたはiBuあるいはNR2である)を有する;
●アルキル置換金属またはメタロイドが、式BXR2(式中、Xは、Cl、BrまたはIであり、かつ各Rは、独立して、アルキルまたはアリル基である)を有する;
●アルキル置換金属またはメタロイドが、式ZnR2(式中、各Rは、独立して、Me、Et、nPr、iPr、nBuまたはiBuである)を有する;
●アルキル置換金属またはメタロイドが、式GaR3(式中、各Rは、独立して、Me、Et、nPr、iPr、nBu、iBuまたはNR2である)を有する;
●アルキル置換金属またはメタロイドが、トリメチルガリウムである;ならびに
●アルキル置換金属またはメタロイドが、式InR3(式中、各Rは、独立して、Me、Et、nPr、iPr、nBu、iBuまたはNR2である)を有する。
●Si含有フィルム形成組成物は、10ppmw未満の金属汚染物全濃度を有し;
●入口導管端部の端部は、Si含有フィルム形成組成物の表面上に配置され、かつ出口導管の端部は、Si含有フィルム形成組成物の表面下に配置され;
●入口導管端部の端部はSi含有フィルム形成組成物の表面下に配置され、かつ出口導管の端部は、Si含有フィルム形成組成物上に配置され;
●入口および出口上にダイアフラムバルブをさらに含んでなり;
●キャニスターの内面上に1層またはそれ以上のバリア層をさらに含んでなり;
●キャニスターの内面上に1〜4層のバリア層をさらに含んでなり;
●キャニスターの内面上に1層または2層のバリア層をさらに含んでなり;
●各バリア層が、酸化ケイ素層、窒化ケイ素層、酸窒化ケイ素層、炭窒化ケイ素、酸炭窒化ケイ素層またはその組合せを含んでなり;
●各バリア層が、5〜1000nmの厚さであり;
●各バリア層が、50〜500nmの厚さであり;
●Si含有フィルム形成組成物が、ペンタクロロジシラン(PCDSまたはSi2HCl5)を含んでなる;
●Si含有フィルム形成組成物が、ペンタヨードジシラン(Si2HI5)を含んでなる;
●Si含有フィルム形成組成物が、ペンタブロモジシラン(Si2HBr5)を含んでなる;
●Si含有フィルム形成組成物が、ペンタフルオロジシラン(Si2HF5)を含んでなる;
●Si含有フィルム形成組成物が、ペンタキス(ジメチルアミノ)ジシラン[Si2H(NMe2)5]を含んでなる;
●Si含有フィルム形成組成物が、SiCl3Hを含んでなる;
●Si含有フィルム形成組成物が、SiH2Cl2を含んでなる;
●Si含有フィルム形成組成物が、SiH3Clを含んでなる;
●Si含有フィルム形成組成物が、SiI2H2を含んでなる;
●Si含有フィルム形成組成物が、SiHMeI2を含んでなる;
●Si含有フィルム形成組成物が、SiMe2I2を含んでなる;
●Si含有フィルム形成組成物が、SiHxCl3−x(CH2Cl)(式中、X=0〜3である)を含んでなる;
●Si含有フィルム形成組成物が、SiH3(CH2Cl)を含んでなる;
●Si含有フィルム形成組成物が、SiH2Cl(CH2Cl)を含んでなる;
●Si含有フィルム形成組成物が、SiHCl2(CH2Cl)を含んでなる;
●Si含有フィルム形成組成物が、SiCl3(CH2Cl)を含んでなる;
●Si含有フィルム形成組成物が、式Si2X6(式中、各Xは、独立して、Cl、Br、IまたはHである)を有するハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、ペンタクロロジシランを含んでなる;
●Si含有フィルム形成組成物が、ペンタブロモジシランを含んでなる;
●Si含有フィルム形成組成物が、ペンタヨードジシランを含んでなる;
●Si含有フィルム形成組成物が、ペンタフルオロジシランを含んでなる;
●Si含有フィルム形成組成物が、ヘキサクロロジシランを含んでなる;
●Si含有フィルム形成組成物が、ヘキサヨードジシランを含んでなる;
●Si含有フィルム形成組成物が、モノクロロジシランを含んでなる;
●Si含有フィルム形成組成物が、モノブロモジシランを含んでなる;
●Si含有フィルム形成組成物が、モノヨードジシランを含んでなる;
●Si含有フィルム形成組成物が、1,1−ジクロロジシラン[Cl2HSi−SiH3]を含んでなる;
●Si含有フィルム形成組成物が、ジブロモジシラン[H2BrSi−SiBrH2]を含んでなる;
●Si含有フィルム形成組成物が、ジヨードジシラン[H2ISi−SiIH2]を含んでなる;
●Si含有フィルム形成組成物が、ジクロロジシラン[H3Si−SiHCl2]を含んでなる;
●Si含有フィルム形成組成物が、ジブロモジシラン[H3Si−SiHBr2]を含んでなる;
●Si含有フィルム形成組成物が、ジヨードジシラン[H3Si−SiHI2]を含んでなる;
●Si含有フィルム形成組成物が、式X3Si−CH2−SiX3(式中、各Xは、独立して、Cl、Br、IまたはHである)を有するハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、ビス(ジクロロシリル)メタン[(SiClH2)2CH2]を含んでなる;
●Si含有フィルム形成組成物が、モノクロロトリシラペンタン[H3Si−CH2−SiH2Cl]を含んでなる;
●Si含有フィルム形成組成物が、式X3Si−CH2−CH2−SiX3(式中、各Xは、独立して、Cl、Br、IまたはHである)を有するハロゲン化物を含んでなる;
●Si含有フィルム形成組成物が、式X3Si−CH2−SiX2−CH2−SiX3(式中、各Xは、独立して、ClまたはHであるが、ただし少なくとも1つの末端Xは、Clを含んでなる)を有するハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、式Cl3Si−CH2−SiCl2−CH2−SiCl3を有するハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、式H3Si−CH2−SiH2−CH2−SiClH2を有するハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、式(−SiX2−CH2−)3(式中、各Xは、独立して、Cl、BrまたはIである)を有するハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、式(−SiHX−CH2−)3(式中、各Xは、独立して、Cl、BrまたはIである)を有するハロゲン化ケイ素を含んでなる;
●Si含有フィルム形成組成物が、オクタクロロトリシラン(OCTS)を含んでなる;
●Si含有フィルム形成組成物が、デカクロロテトラシラン(Si4Cl10)を含んでなる;ならびに
●Si含有フィルム形成組成物が、ドデカクロロペンタシラン(DCPSまたはSi5Cl12)を含んでなる。
特定の略語、記号および用語は、次の明細および請求項全体で使用され、かつ次のものを含む。
図3は、次の試験のために使用された析出装置の概略図である。装置は、基体クーポン105を含有する中空管反応器100を含む。ポンプ110によって、含有物を中空管反応器100から取り出す。
ヘキサクロロジシラン(HCDSまたはSi2Cl6)の比較熱分解試験を、4つの異なる温度(400、500、600および700℃)において、30分間、SiO2基体上で、図3の析出装置において実行した。熱壁管反応器を1トルに保持し、キャリア気体として50sccmのN2を使用して、反応チャンバー中へHCDSの4sccmの連続流を用いた。
Si基体上で、500〜700℃の温度範囲において酸化剤としてO3を用いて、PCDSを使用してSiO2 ALDを実行した。図3の反応燃焼室を1トルで制御し、そして50sccmのN2を連続的に流した。ALDプロセスは、次のステップを含んだ:1)10秒間、反応チャンバー中に4sccmのPCDSのパルスを供給し、2)90秒間、50sccmのN2によって過剰量の前駆体をパージし、3)10秒、約7.2%のO3/O2(O2:100sccm)を供給し、4)30秒間、50sccmのN2によって過剰量のO3/O2をパージする。析出された層が、フィルム特徴に関して適切な厚さ(すなわち、100Å以上)を達成するまで、順序1)〜4)を200サイクル繰り返した。この方法は、PCDSと同一のALDプロセス条件で、PCDSをHCDSで置き換えて繰り返した。PCDSを使用する4つの別個のクーポン基体位置(円形)およびHCDSを使用する4つの別個のクーポン基体位置(三角形)からの平均析出レートを図6に示す。
実施例2の結果に基づき、SiO2 ALD成長挙動のPCDSパルス時間依存性は、2つの温度、550℃および600℃において試験され、そして結果を図7に示す。PCDSのパルス時間が550℃(ひし形)および600℃(正方形)の両方において変動したことを除き、実施例2における温度依存性試験のために使用されたものと同一プロセス条件をこの評価に適応した。両温度において、安定な平均析出レートが、600℃においてクーポン:0.91〜0.94Å/サイクルおよび550℃において0.50〜0.52Å/サイクルで、3〜5の位置から、10〜15秒のPCDSのパルス時間で観察される。安定な析出レートは、ALD飽和の特徴であると考えられる。
550、600、650および700℃においてSi基体上でPCDSから実施例2において析出されたSiO2 ALDフィルムに関して、フィルム組成物を試験するために、XPS分析が実行された。図8a〜dは、5元素、Si、Cl、C、NおよびOのXPS深さ分布の結果を示す。Cl、CおよびNは、フィルムで検出されなかった。XPSスパッタエネルギーは、550℃および600℃において析出されたものよりも、650℃および700℃において析出されたフィルムに関して、より高く設定された。結果として、650℃および700℃において析出されたフィルムのエッチ時間に関する分析結果は、550℃および600℃において析出されたフィルムの同等のエッチ時間よりも、より深く侵入する。
ALDによって析出されたSiO2フィルムの段差被覆は、600℃において、8マイクロメートルの深さを有するアスペクト比(AR)=40を有するホールを有するパターンウエハ上で試験された。図3の反応燃焼室を1トルで制御し、そして50sccmのN2を連続的に流した。ALDプロセスは、次のステップを含んだ:1)10秒間、反応チャンバー中に4sccmのPCDSのパルスを供給し、2)90秒間、50sccmのN2によって過剰量の前駆体をパージし、3)10秒、約7.2%のO3/O2(O2:100sccm)を供給し、4)10秒間、50sccmのN2によって過剰量のO3/O2をパージする。順序1)〜4)を350サイクル繰り返した。図9および9a〜cは、全ホール(図9)および図9内の3つの異なる位置:(図9a)上部段差被覆=93%、(図9b)中央(上部から約2マイクロメートルの深さ)段差被覆=77%および(図9c)低部段差被覆=73%における得られた段差被覆を示す走査電子顕微鏡写真である。
SiO2フィルムは、PCDS、酸化剤としてH2Oおよび触媒としてトリエチルアミン(TEA)を用いるALDを使用して析出された。図3の反応燃焼室を5トル、50〜100℃の温度で制御し、そして200sccmのArを連続的に流した。析出プロセスは、次のステップを含んだ:1)10秒間、反応燃焼室中に1sccmのPCDSおよび50sccmのTEAのパルスを導入し、2)10秒間、1slmのArによって過剰量のPCDSおよびTEAをパージし、3)20秒、燃焼室に15sccmのH2Oおよび50sccmのTEAおよび1slmのArを導入し、4)20秒間、1slmのArによって過剰量のH2OおよびTEAをパージする。順序1)〜4)を300サイクル繰り返した。
SiNフィルムは、Si供給源としてPCDS(円形)またはHCDS(正方形)、および窒化物形成供給源としてアンモニア(NH3)を使用して、CVDによって析出された。図3の反応燃焼室を1トルで制御し、温度を450℃〜600℃で変動させ、そして100sccmのArを連続的に流した。析出された層が適切な厚さに達するまで、1sccmのSi供給源および25sccmのNH3の混合気体流を60〜120分間、反応燃焼室に供給した。図12は、HCDS+NH3よりも、PCDS+NH3によって得られた析出レート(白抜き)および屈折率(黒塗り)を例示するグラフである。
SiNフィルムは、Si供給源としてPCDS(円形)、HCDS(正方形)またはOCTS(オクタクロロトリシラン)(三角形)、および窒化物形成供給源としてアンモニア(NH3)を使用して、ALDによって析出された。図3の反応燃焼室を5トルで制御し、温度を350℃〜600℃で変動させ、そして100sccmのArを連続的に流した。析出プロセスは、次のステップを含む:1)10秒間、反応燃焼室中に1sccmのSi供給源のパルスを導入し、2)10秒間、1slmのArによって反応燃焼室から過剰量のSi供給源をパージし、3)反応燃焼室に50sccmのNH3を導入し、4)20秒間、1slmのArによって過剰量のNH3をパージする。析出された層が、100Å以上の適切な厚さを達成するまで、順序1)〜4)を200〜400サイクル繰り返した。
SiCフィルムは、Si供給源としてPCDSまたはHCDS、および炭素供給源としてトリメチルアルミニウム(TMA)を使用して、ALDによって析出された。図3の反応燃焼室を8トルで制御し、温度を350℃〜400℃で変動させ、そして10sccmのN2を連続的に流した。析出プロセスは、次のステップを含む:1)15秒間、反応燃焼室中に0.8sccmのSi供給源のパルスを導入し、2)30秒間、25sccmのN2によって反応燃焼室から過剰量のSi供給源をパージし、3)反応燃焼室に1.8sccmのTMAを導入し、4)60秒間、25sccmのN2によって反応燃焼室から過剰量のTMAをパージする。析出された層が、100Å以上の適切な厚さを達成するまで、順序1)〜4)を290サイクル繰り返した。図15は、400℃においてPCDSを使用して析出されたSiCフィルムのXPS深さ分布が、O、Al、Cl不純物を含むことを示す。図16は、測定位置に基づく、フィルムの厚さ(白抜き)および屈折率(黒塗り)を示す。このグラフは、HCDS(三角形)+TMAによる場合よりも、PCDS(正方形)+TMAで、より高い屈折率が得られたことを例示する。より高い屈折率を有するフィルム(すなわち、PCDS+TMAから)は、より低い屈折率を有するもの(すなわち、HCDS+TMAから)よりも高密度であり得、ウェットエッチ抵抗を増強し得る。
図17は、実施例10の試験のために使用された析出装置の概略図である。この装置は、ウエハ段階101を含有する反応器100を含む。ウエハは、ポンプ108に接続しているロードロックチャンバー102によってウエハ段階101に移される。シャワーヘッド103は、反応器100の上部に位置し、プラズマは、RF発生器106によって発生し得る。乾燥ポンプ105によって、反応器100の含有物が除去される。
Claims (15)
- 基体上に酸化ケイ素フィルムを析出する熱ALD法であって、
a)前記基体を含有する反応器を、約500℃〜約800℃の範囲の温度および約0.1〜約10トル(13Pa〜1,333Pa)の範囲の圧力に設定することと;
b)前記反応チャンバー中にペンタクロロジシランの蒸気を導入して、前記基体上でケイ素含有層を形成することと;
c)酸素含有反応物と、前記ケイ素含有層とを反応させて、約0.4Å(0.04nm)〜約1.5Å(0.15nm)の範囲のサイクルあたりの成長を有する酸化ケイ素フィルムの層を形成することと;
d)ステップb)およびc)を繰り返すことと
を含んでなる、方法。 - 前記酸素含有反応物が、オゾンおよび酸素の混合物である、請求項1に記載の方法。
- 前記混合物が、少なくとも5%v/vのオゾンを含んでなる、請求項2に記載の方法。
- 前記基体が、約10:1〜約100:1のアスペクト比を有するホールまたはトレンチを含んでなり、前記ホールまたはトレンチ上で約80%〜約100%の段差被覆の前記酸化ケイ素フィルムを得ることをさらに含んでなる、請求項1〜3のいずれか一項に記載の方法。
- 前記酸化ケイ素フィルムが、プラズマを使用せずに析出される、請求項1〜4のいずれか一項に記載の方法。
- 前記サイクルあたりの成長が、約0.75Å(0.075nm)〜約1Å(0.1nm)の範囲である、請求項1〜5のいずれか一項に記載の方法。
- 基体上に窒化ケイ素フィルムを析出する熱ALD法であって、
a)前記基体を含有する反応器を、約450℃〜約650℃の範囲の温度および約0.1〜約100トル(13Pa〜13,332Pa)の範囲の圧力に設定することと;
b)前記反応チャンバー中にペンタクロロジシランの蒸気を導入して、前記基体上でケイ素含有層を形成することと;
c)窒素含有反応物と、前記ケイ素含有層とを反応させて、約0.3Å(0.03nm)〜約2Å(0.2nm)の範囲のサイクルあたりの成長および約1.8〜2.1の範囲の屈折率を有する窒化ケイ素フィルムの層を形成することと;
d)ステップb)およびc)を繰り返すことと
を含んでなる、方法。 - 前記窒素含有反応物がNH3である、請求項7に記載の方法。
- 前記窒化ケイ素フィルムが、プラズマを使用せずに析出される、請求項7または8に記載の方法。
- 基体上に非晶質または多結晶質ケイ素フィルムを析出する熱蒸着法であって、
a)前記基体を含有する反応器を、約550℃〜約800℃の範囲の温度および約0.1〜約100トル(13Pa〜13,332Pa)の範囲の圧力に設定することと;
b)前記反応チャンバー中にペンタクロロジシランの蒸気を導入して、前記基体上で前記ケイ素フィルムを形成することと
を含んでなる、方法。 - 還元気体を導入することをさらに含んでなる、請求項10に記載の方法。
- 前記ケイ素フィルムが約0原子%〜5原子%のC;約0原子%〜1原子%のN;および約0原子%〜1原子%のClを含有する、請求項10または11に記載の方法。
- 前記ケイ素フィルムが非晶質ケイ素フィルムである、請求項10〜12のいずれか一項に記載の方法。
- 前記ケイ素フィルムが多ケイ素フィルムである、請求項10〜12のいずれか一項に記載の方法。
- 前記基体が、約10:1〜約100:1のアスペクト比を有するホールまたはトレンチを含んでなり、前記ホールまたはトレンチ上で約80%〜約100%の段差被覆の前記ケイ素フィルムを得ることをさらに含んでなる、請求項10〜14のいずれか一項に記載の方法。
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SG11201805070TA (en) | 2018-07-30 |
EP3400607A2 (en) | 2018-11-14 |
US20190027357A1 (en) | 2019-01-24 |
CN108475636B (zh) | 2023-08-15 |
WO2017115147A3 (en) | 2017-08-10 |
US20170186597A1 (en) | 2017-06-29 |
WO2017115147A2 (en) | 2017-07-06 |
EP3400607A4 (en) | 2019-07-31 |
CN108475636A (zh) | 2018-08-31 |
US9633838B2 (en) | 2017-04-25 |
US20160111272A1 (en) | 2016-04-21 |
KR20180099716A (ko) | 2018-09-05 |
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