JP2006351689A - シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム - Google Patents
シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム Download PDFInfo
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- JP2006351689A JP2006351689A JP2005173656A JP2005173656A JP2006351689A JP 2006351689 A JP2006351689 A JP 2006351689A JP 2005173656 A JP2005173656 A JP 2005173656A JP 2005173656 A JP2005173656 A JP 2005173656A JP 2006351689 A JP2006351689 A JP 2006351689A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 144
- 239000000460 chlorine Substances 0.000 claims abstract description 53
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 50
- 239000001301 oxygen Substances 0.000 claims abstract description 50
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 50
- 239000000376 reactant Substances 0.000 claims abstract description 28
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 94
- 239000001257 hydrogen Substances 0.000 claims description 44
- 229910052739 hydrogen Inorganic materials 0.000 claims description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 30
- 230000001590 oxidative effect Effects 0.000 claims description 20
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 239000007795 chemical reaction product Substances 0.000 claims description 6
- 229960001730 nitrous oxide Drugs 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 48
- 239000010408 film Substances 0.000 description 64
- 235000012431 wafers Nutrition 0.000 description 57
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 230000008569 process Effects 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910018557 Si O Inorganic materials 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
【課題】 低温下で、ステップカバレッジのよいシリコン酸化膜を形成することができるシリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラムを提供する。
【解決手段】 まず、反応管2内にHCDを供給し、半導体ウエハWにHCDと反応した反応物を形成する。次に、反応管2内に水素ラジカルを供給してこの反応物と反応させ、反応物に含まれる塩素を除去する。続いて、反応管2内に酸素ラジカルを供給する。これにより、酸素ラジカルと反応物とが反応して、半導体ウエハWにシリコン酸化膜が形成される。この処理を複数回繰り返すことにより所望のシリコン酸化膜を形成することができる。
【選択図】 図1
Description
被処理体が収容された反応室内にヘキサクロロジシランを供給し、当該被処理体に前記ヘキサクロロジシランと反応した反応物を形成する反応物形成ステップと、
前記反応物に含まれる塩素を除去し水素化する塩素除去ステップと、
前記反応室内に酸化ガスのラジカルを供給して前記反応物と反応させ、前記被処理体にシリコン酸化膜を形成するシリコン酸化膜形成ステップと、を備え、
前記反応物形成ステップと、前記塩素除去ステップと、前記シリコン酸化膜形成ステップとを、この順に複数回繰り返す、ことを特徴とする。
被処理体を収容する反応室と、
前記反応室内のガスを排気する排気手段と、
前記反応室内にヘキサクロロジシランを供給するヘキサクロロジシラン供給手段と、
前記反応室内に水素ラジカルを供給する水素ラジカル供給手段と、
前記反応室内に酸化ガスのラジカルを供給する酸化ガスラジカル供給手段と、
装置の各部を制御する制御手段と、を備え、
前記制御手段は、
前記ヘキサクロロジシラン供給手段を制御して反応室内にヘキサクロロジシランを供給させ、前記反応室内に収容された被処理体に前記ヘキサクロロジシランと反応した反応物を形成し、
前記水素ラジカル供給手段を制御して反応室内に水素ラジカルを供給させて前記反応物と反応させ、当該反応物に含まれる塩素を除去して水素化し、
前記酸化ガスラジカル供給手段を制御して反応室内に酸化ガスのラジカルを供給させ、前記反応室内で前記酸化ガスのラジカルと前記反応物と反応させ、前記被処理体にシリコン酸化膜を形成する、
処理を複数回繰り返す、ことを特徴とする。
コンピュータに、
被処理体が収容された反応室内にヘキサクロロジシランを供給し、当該被処理体に前記ヘキサクロロジシランと反応した反応物を形成する反応物形成ステップと、
前記反応物に含まれる塩素を除去し水素化する塩素除去ステップと、
前記反応室内に酸化ガスのラジカルを供給して前記反応物と反応させ、前記被処理体にシリコン酸化膜を形成するシリコン酸化膜形成ステップとを、
この順に複数回繰り返す手順、
を実行させることを特徴とする。
圧力計(群)123は、反応管2内及び排気管内などの各部の圧力を測定し、測定値を制御部100に通知する。
バス116は、各部の間で情報を伝達する。
2 反応管
3 排気部
4 排気口
5 蓋体
6 ウエハボート
7 昇温用ヒータ
8、9 処理ガス供給管
10 プラズマ発生部
11 電極
12 回転支柱
13 回転機構
14 回転軸
15 回転供給部
100 制御部
111 レシピ記憶部
112 ROM
113 RAM
114 I/Oポート
115 CPU
116 バス
121 操作パネル
122 温度センサ
123 圧力計
124 ヒータコントローラ
125 MFC
126 バルブ制御部
127 真空ポンプ
128 ボートエレベータ
129 プラズマ制御部
W 半導体ウエハ
Claims (10)
- 被処理体が収容された反応室内にヘキサクロロジシランを供給し、当該被処理体に前記ヘキサクロロジシランと反応した反応物を形成する反応物形成ステップと、
前記反応物に含まれる塩素を除去し水素化する塩素除去ステップと、
前記反応室内に酸化ガスのラジカルを供給して前記反応物と反応させ、前記被処理体にシリコン酸化膜を形成するシリコン酸化膜形成ステップと、を備え、
前記反応物形成ステップと、前記塩素除去ステップと、前記シリコン酸化膜形成ステップとを、この順に複数回繰り返す、ことを特徴とするシリコン酸化膜の形成方法。 - 前記シリコン酸化膜形成ステップでは、前記酸化ガスに、酸素、酸化窒素、または、一酸化二窒素を用いる、ことを特徴とする請求項1に記載のシリコン酸化膜の形成方法。
- 前記シリコン酸化膜形成ステップでは、前記反応室内を180℃〜250℃に設定する、ことを特徴とする請求項1または2に記載のシリコン酸化膜の形成方法。
- 前記シリコン酸化膜形成ステップでは、前記反応室内を40Pa〜100Paに設定する、ことを特徴とする請求項1乃至3のいずれか1項に記載のシリコン酸化膜の形成方法。
- 前記シリコン酸化膜形成ステップでは、70Pa〜600Paに設定されたプラズマ発生室に酸素を供給して酸素ラジカルを形成し、形成した酸素ラジカルを前記プラズマ発生室から前記反応室内に供給する、ことを特徴とする請求項1乃至4のいずれか1項に記載のシリコン酸化膜の形成方法。
- 前記塩素除去ステップでは、前記反応室内に水素ラジカルを供給して前記反応物と反応させ、当該反応物に含まれる塩素を除去し水素化する、ことを特徴とする請求項1乃至5のいずれか1項に記載のシリコン酸化膜の形成方法。
- 前記塩素除去ステップでは、前記反応室内を40Pa〜100Paに設定する、ことを特徴とする請求項6に記載のシリコン酸化膜の形成方法。
- 前記塩素除去ステップでは、70Pa〜400Paに設定されたプラズマ発生室に水素を供給して水素ラジカルを形成し、形成した水素ラジカルを前記プラズマ発生室から前記反応室内に供給する、ことを特徴とする請求項6または7に記載のシリコン酸化膜の形成方法。
- 被処理体を収容する反応室と、
前記反応室内のガスを排気する排気手段と、
前記反応室内にヘキサクロロジシランを供給するヘキサクロロジシラン供給手段と、
前記反応室内に水素ラジカルを供給する水素ラジカル供給手段と、
前記反応室内に酸化ガスのラジカルを供給する酸化ガスラジカル供給手段と、
装置の各部を制御する制御手段と、を備え、
前記制御手段は、
前記ヘキサクロロジシラン供給手段を制御して反応室内にヘキサクロロジシランを供給させ、前記反応室内に収容された被処理体に前記ヘキサクロロジシランと反応した反応物を形成し、
前記水素ラジカル供給手段を制御して反応室内に水素ラジカルを供給させて前記反応物と反応させ、当該反応物に含まれる塩素を除去して水素化し、
前記酸化ガスラジカル供給手段を制御して反応室内に酸化ガスのラジカルを供給させ、前記反応室内で前記酸化ガスのラジカルと前記反応物と反応させ、前記被処理体にシリコン酸化膜を形成する、
処理を複数回繰り返す、ことを特徴とするシリコン酸化膜の形成装置。 - コンピュータに、
被処理体が収容された反応室内にヘキサクロロジシランを供給し、当該被処理体に前記ヘキサクロロジシランと反応した反応物を形成する反応物形成ステップと、
前記反応物に含まれる塩素を除去し水素化する塩素除去ステップと、
前記反応室内に酸化ガスのラジカルを供給して前記反応物と反応させ、前記被処理体にシリコン酸化膜を形成するシリコン酸化膜形成ステップとを、
この順に複数回繰り返す手順、
を実行させるためのプログラム。
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JP2005173656A JP4456533B2 (ja) | 2005-06-14 | 2005-06-14 | シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム |
US11/448,005 US7442656B2 (en) | 2005-06-14 | 2006-06-07 | Method and apparatus for forming silicon oxide film |
KR1020060052907A KR100957879B1 (ko) | 2005-06-14 | 2006-06-13 | 반도체 처리용 성막 방법 및 장치와, 컴퓨터로 판독 가능한 매체 |
TW095121221A TWI355029B (en) | 2005-06-14 | 2006-06-14 | Method and apparatus for forming silicon oxide fil |
CNB2006100922090A CN100477116C (zh) | 2005-06-14 | 2006-06-14 | 硅氧化膜的形成方法和硅氧化膜的形成装置 |
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JP2011097096A (ja) * | 2007-08-31 | 2011-05-12 | Tokyo Electron Ltd | プラズマ処理装置及び酸化膜の形成方法 |
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JP2015173251A (ja) * | 2014-02-19 | 2015-10-01 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置 |
US9865457B2 (en) | 2015-11-04 | 2018-01-09 | Tokyo Electron Limited | Nitride film forming method using nitrading active species |
JP2019501528A (ja) * | 2015-12-28 | 2019-01-17 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 五置換ジシランを使用するケイ素含有フィルムの蒸着 |
KR20170124457A (ko) | 2016-05-02 | 2017-11-10 | 도쿄엘렉트론가부시키가이샤 | 오목부의 매립 방법 |
US9945028B2 (en) | 2016-05-02 | 2018-04-17 | Tokyo Electron Limited | Method of filling recess |
JP2019083271A (ja) * | 2017-10-31 | 2019-05-30 | 東京エレクトロン株式会社 | シリコン酸化膜を形成する方法および装置 |
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KR100957879B1 (ko) | 2010-05-13 |
TW200713447A (en) | 2007-04-01 |
CN1881543A (zh) | 2006-12-20 |
US20060281337A1 (en) | 2006-12-14 |
CN100477116C (zh) | 2009-04-08 |
JP4456533B2 (ja) | 2010-04-28 |
KR20060130501A (ko) | 2006-12-19 |
TWI355029B (en) | 2011-12-21 |
US7442656B2 (en) | 2008-10-28 |
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