CN100477116C - 硅氧化膜的形成方法和硅氧化膜的形成装置 - Google Patents

硅氧化膜的形成方法和硅氧化膜的形成装置 Download PDF

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CN100477116C
CN100477116C CNB2006100922090A CN200610092209A CN100477116C CN 100477116 C CN100477116 C CN 100477116C CN B2006100922090 A CNB2006100922090 A CN B2006100922090A CN 200610092209 A CN200610092209 A CN 200610092209A CN 100477116 C CN100477116 C CN 100477116C
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CN1881543A (zh
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松浦广行
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Tokyo Electron Ltd
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB2006100922090A 2005-06-14 2006-06-14 硅氧化膜的形成方法和硅氧化膜的形成装置 Expired - Fee Related CN100477116C (zh)

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Application Number Priority Date Filing Date Title
JP2005173656A JP4456533B2 (ja) 2005-06-14 2005-06-14 シリコン酸化膜の形成方法、シリコン酸化膜の形成装置及びプログラム
JP2005173656 2005-06-14

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CN1881543A CN1881543A (zh) 2006-12-20
CN100477116C true CN100477116C (zh) 2009-04-08

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US (1) US7442656B2 (ja)
JP (1) JP4456533B2 (ja)
KR (1) KR100957879B1 (ja)
CN (1) CN100477116C (ja)
TW (1) TWI355029B (ja)

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JP4607637B2 (ja) * 2005-03-28 2011-01-05 東京エレクトロン株式会社 シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム
KR100781942B1 (ko) * 2006-12-26 2007-12-05 주식회사 테라세미콘 평판표시장치 제조시스템의 배치식 보트
KR100712729B1 (ko) 2007-02-09 2007-05-04 주식회사 아토 절연막 형성 방법
JP5098882B2 (ja) * 2007-08-31 2012-12-12 東京エレクトロン株式会社 プラズマ処理装置
KR101043211B1 (ko) * 2008-02-12 2011-06-22 신웅철 배치형 원자층 증착 장치
JP2010114420A (ja) * 2008-10-07 2010-05-20 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
JP5665289B2 (ja) 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5044579B2 (ja) * 2009-01-27 2012-10-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
KR101583608B1 (ko) * 2009-03-24 2016-01-08 삼성전자 주식회사 무기계 실리콘 전구체를 이용한 실리콘 산화막의 형성 방법및 이를 이용한 반도체 장치의 제조 방법
US8980382B2 (en) * 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
CN101769247B (zh) * 2010-01-14 2012-02-01 友达光电股份有限公司 抽气装置
JP5495847B2 (ja) * 2010-02-24 2014-05-21 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および基板処理方法
JP5847566B2 (ja) 2011-01-14 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6125846B2 (ja) * 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
KR101328104B1 (ko) 2012-06-15 2013-11-13 주식회사 티지오테크 정류부를 포함하는 배치식 에피택셜층 형성장치
KR101551199B1 (ko) * 2013-12-27 2015-09-10 주식회사 유진테크 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 반도체 소자
JP6349234B2 (ja) * 2014-02-19 2018-06-27 東京エレクトロン株式会社 シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置
JP6366454B2 (ja) 2014-10-07 2018-08-01 東京エレクトロン株式会社 被処理体を処理する方法
JP6559430B2 (ja) 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
JP6462477B2 (ja) 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
JP6509095B2 (ja) 2015-11-04 2019-05-08 東京エレクトロン株式会社 窒化膜の形成方法
KR102454894B1 (ko) 2015-11-06 2022-10-14 삼성전자주식회사 물질막, 이를 포함하는 반도체 소자, 및 이들의 제조 방법
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CN1881543A (zh) 2006-12-20
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