JP2019194351A5 - - Google Patents

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JP2019194351A5
JP2019194351A5 JP2019042015A JP2019042015A JP2019194351A5 JP 2019194351 A5 JP2019194351 A5 JP 2019194351A5 JP 2019042015 A JP2019042015 A JP 2019042015A JP 2019042015 A JP2019042015 A JP 2019042015A JP 2019194351 A5 JP2019194351 A5 JP 2019194351A5
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Japan
Prior art keywords
chamber component
mol
ceramic material
sintered ceramic
substantially composed
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JP2019042015A
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English (en)
Japanese (ja)
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JP2019194351A (ja
JP7292060B2 (ja
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Priority claimed from US16/279,247 external-priority patent/US11014853B2/en
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Publication of JP2019194351A publication Critical patent/JP2019194351A/ja
Publication of JP2019194351A5 publication Critical patent/JP2019194351A5/ja
Priority to JP2023092894A priority Critical patent/JP2023116597A/ja
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Publication of JP7292060B2 publication Critical patent/JP7292060B2/ja
Priority to JP2025154654A priority patent/JP2026012177A/ja
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JP2019042015A 2018-03-07 2019-03-07 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料 Active JP7292060B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023092894A JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2025154654A JP2026012177A (ja) 2018-03-07 2025-09-18 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862639941P 2018-03-07 2018-03-07
US62/639,941 2018-03-07
US16/279,247 2019-02-19
US16/279,247 US11014853B2 (en) 2018-03-07 2019-02-19 Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments

Related Child Applications (1)

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JP2023092894A Division JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Publications (3)

Publication Number Publication Date
JP2019194351A JP2019194351A (ja) 2019-11-07
JP2019194351A5 true JP2019194351A5 (https=) 2022-04-01
JP7292060B2 JP7292060B2 (ja) 2023-06-16

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2019042015A Active JP7292060B2 (ja) 2018-03-07 2019-03-07 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2023092894A Pending JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2025154654A Pending JP2026012177A (ja) 2018-03-07 2025-09-18 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023092894A Pending JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2025154654A Pending JP2026012177A (ja) 2018-03-07 2025-09-18 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Country Status (5)

Country Link
US (2) US11014853B2 (https=)
JP (3) JP7292060B2 (https=)
KR (2) KR102422725B1 (https=)
CN (2) CN110240481A (https=)
TW (2) TWI785212B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11229968B2 (en) * 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11990360B2 (en) 2018-01-31 2024-05-21 Lam Research Corporation Electrostatic chuck (ESC) pedestal voltage isolation
US11014853B2 (en) 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US11309203B2 (en) * 2018-11-13 2022-04-19 Samsung Electronics Co., Ltd. Wafer stage and method of manufacturing the same
DE102019101657A1 (de) * 2019-01-23 2020-07-23 Berliner Glas Kgaa Herbert Kubatz Gmbh & Co Haltevorrichtung zur elektrostatischen Halterung eines Bauteils mit einem durch Diffusionsbonden gefügten Grundkörper und Verfahren zu deren Herstellung
USD884855S1 (en) * 2019-10-30 2020-05-19 Applied Materials, Inc. Heater pedestal
US12249490B2 (en) 2019-11-05 2025-03-11 Lam Research Corporation Single crystal metal oxide plasma chamber component
CN111620692B (zh) * 2020-04-15 2022-06-07 深圳市商德先进陶瓷股份有限公司 耐等离子刻蚀陶瓷及其制备方法和等离子刻蚀设备
US11584993B2 (en) 2020-10-19 2023-02-21 Applied Materials, Inc. Thermally uniform deposition station
WO2022137467A1 (ja) * 2020-12-24 2022-06-30 トーカロ株式会社 静電チャック及び処理装置
CN115527825B (zh) * 2021-06-25 2026-03-17 中微半导体设备(上海)股份有限公司 一种等离子体处理设备、检测装置及其运行方法
CN116313715B (zh) * 2021-12-20 2025-08-01 中国石油化工股份有限公司 涂覆刀片电极的方法、刀片电极、滑动弧等离子体反应器和等离子体转化甲烷的方法
US20230215702A1 (en) * 2021-12-30 2023-07-06 Applied Materials, Inc. Uniformity control for plasma processing using wall recombination
CN115261800A (zh) * 2022-08-26 2022-11-01 京东方科技集团股份有限公司 蒸发源装置及蒸镀设备
US20240266200A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Electrostatic Chuck
KR102753084B1 (ko) * 2023-12-28 2025-01-10 주식회사 와이컴 우수한 평탄도를 가지는 반도체 공정용 트레이 제조방법

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892198A (en) * 1974-06-27 1975-07-01 Christopher David Dobson Enclosures for vacuum coating
JPS5642909A (en) 1979-09-18 1981-04-21 Ngk Insulators Ltd Solid electrolyte
JPS56111456A (en) 1980-02-07 1981-09-03 Nippon Denso Co Ltd Solid electrolyte body for oxygen sensor
JPS6038350B2 (ja) 1980-02-07 1985-08-31 株式会社デンソー 酸素センサ−用固体電解質体
US4360598A (en) 1980-03-26 1982-11-23 Ngk Insulators, Ltd. Zirconia ceramics and a method of producing the same
US4303447A (en) * 1980-04-02 1981-12-01 University Of Illinois Foundation Low temperature densification of zirconia ceramics
US4645716A (en) 1985-04-09 1987-02-24 The Perkin-Elmer Corporation Flame spray material
JPH0665706A (ja) 1992-08-19 1994-03-08 Tosoh Corp 溶射用ジルコニア粉末
JPH0920561A (ja) * 1995-06-30 1997-01-21 Kyocera Corp 半導体用セラミック焼結体およびその製造方法
US5968377A (en) * 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
US6069103A (en) 1996-07-11 2000-05-30 Saint-Gobain/Norton Industrial Ceramics Corporation LTD resistant, high strength zirconia ceramic
US5900283A (en) 1996-11-12 1999-05-04 General Electric Company Method for providing a protective coating on a metal-based substrate and related articles
US5879523A (en) 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US5993976A (en) 1997-11-18 1999-11-30 Sermatech International Inc. Strain tolerant ceramic coating
JP2000001362A (ja) 1998-06-10 2000-01-07 Nippon Seratekku:Kk 耐食性セラミックス材料
JP2001102436A (ja) 1999-05-07 2001-04-13 Applied Materials Inc 静電チャック及びその製造方法
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP4548887B2 (ja) 1999-12-27 2010-09-22 京セラ株式会社 耐食性セラミック部材およびその製造方法
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
JP4688307B2 (ja) 2000-07-11 2011-05-25 コバレントマテリアル株式会社 半導体製造装置用耐プラズマ性部材
US6620520B2 (en) 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
US7001859B2 (en) 2001-01-22 2006-02-21 Ohio Aerospace Institute Low conductivity and sintering-resistant thermal barrier coatings
TWI262905B (en) 2001-11-13 2006-10-01 Tosoh Corp Quartz glass parts, ceramic parts and process of producing those
JP2003146751A (ja) 2001-11-20 2003-05-21 Toshiba Ceramics Co Ltd 耐プラズマ性部材及びその製造方法
JP2003238250A (ja) 2002-02-12 2003-08-27 Yotai Refractories Co Ltd イットリア質耐火物
US20080264564A1 (en) 2007-04-27 2008-10-30 Applied Materials, Inc. Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
US8067067B2 (en) 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US6686060B2 (en) 2002-05-15 2004-02-03 General Electric Company Thermal barrier coating material
US6730422B2 (en) 2002-08-21 2004-05-04 United Technologies Corporation Thermal barrier coatings with low thermal conductivity
CN1412150A (zh) 2002-11-19 2003-04-23 中国科学院兰州化学物理研究所 自润滑陶瓷复合材料及制备工艺
KR100599998B1 (ko) 2003-02-17 2006-07-13 도시바세라믹스가부시키가이샤 산화이트륨 소결체 및 그 제조방법
JP2004269951A (ja) 2003-03-07 2004-09-30 Tocalo Co Ltd 耐ハロゲンガス皮膜被覆部材およびその製造方法
JP2004332081A (ja) * 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 耐プラズマ部材及びその製造方法
US7148167B2 (en) 2003-08-28 2006-12-12 Kyocera Corporation Alumina/zirconia ceramics and method of producing the same
US7141522B2 (en) 2003-09-18 2006-11-28 3M Innovative Properties Company Ceramics comprising Al2O3, Y2O3, ZrO2 and/or HfO2, and Nb2O5 and/or Ta2O5 and methods of making the same
FR2860790B1 (fr) 2003-10-09 2006-07-28 Snecma Moteurs Cible destinee a etre evaporee sous faisceau d'electrons, son procede de fabrication, barriere thermique et revetement obtenus a partir d'une cible, et piece mecanique comportant un tel revetement
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
JP5046480B2 (ja) 2004-09-24 2012-10-10 京セラ株式会社 耐食性部材とその製造方法、およびこれを用いた半導体・液晶製造装置用部材
DE102004053959B4 (de) * 2004-11-09 2007-09-27 Deutsches Zentrum für Luft- und Raumfahrt e.V. Keramikmaterial und seine Verwendung sowie Verfahren zur Herstellung von Beschichtungen mit dem Keramikmaterial
US7052553B1 (en) * 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
CN1278989C (zh) 2005-05-25 2006-10-11 宜兴新兴锆业有限公司 一种改进的钇部分稳定二氧化锆生产方法
US8603930B2 (en) 2005-10-07 2013-12-10 Sulzer Metco (Us), Inc. High-purity fused and crushed zirconia alloy powder and method of producing same
JP5125065B2 (ja) 2006-02-17 2013-01-23 東ソー株式会社 透明ジルコニア焼結体
US8728967B2 (en) 2006-05-26 2014-05-20 Praxair S.T. Technology, Inc. High purity powders
JP4936948B2 (ja) 2007-03-27 2012-05-23 日本碍子株式会社 複合材料及びその製造方法
US7696117B2 (en) 2007-04-27 2010-04-13 Applied Materials, Inc. Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
TWI654159B (zh) 2007-04-27 2019-03-21 美商應用材料股份有限公司 減小曝露於含鹵素電漿下之表面腐蝕速率的方法與設備
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US8367227B2 (en) * 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
WO2010053687A2 (en) 2008-11-04 2010-05-14 Praxair Technology, Inc. Thermal spray coatings for semiconductor applications
JP5545803B2 (ja) 2009-06-30 2014-07-09 太平洋セメント株式会社 セラミックス多孔質焼結体の製造方法
US9440886B2 (en) * 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) * 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP6103046B2 (ja) 2014-03-10 2017-03-29 住友大阪セメント株式会社 誘電体材料、静電チャック装置
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10385459B2 (en) * 2014-05-16 2019-08-20 Applied Materials, Inc. Advanced layered bulk ceramics via field assisted sintering technology
US10431435B2 (en) * 2014-08-01 2019-10-01 Applied Materials, Inc. Wafer carrier with independent isolated heater zones
JP6489467B2 (ja) 2014-09-05 2019-03-27 国立大学法人 香川大学 複合酸化物セラミックスおよび半導体製造装置の構成部材
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US20170140902A1 (en) 2015-11-16 2017-05-18 Coorstek, Inc. Corrosion-resistant components and methods of making
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US20180251406A1 (en) * 2017-03-06 2018-09-06 Applied Materials, Inc. Sintered ceramic protective layer formed by hot pressing
US20180327892A1 (en) * 2017-05-10 2018-11-15 Applied Materials, Inc. Metal oxy-flouride films for chamber components
US20180337026A1 (en) * 2017-05-19 2018-11-22 Applied Materials, Inc. Erosion resistant atomic layer deposition coatings
US11014853B2 (en) * 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments

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