TWI785212B - 用於電漿環境中的腔室部件的氧化釔-二氧化鋯耐蝕材料 - Google Patents
用於電漿環境中的腔室部件的氧化釔-二氧化鋯耐蝕材料 Download PDFInfo
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- TWI785212B TWI785212B TW108107570A TW108107570A TWI785212B TW I785212 B TWI785212 B TW I785212B TW 108107570 A TW108107570 A TW 108107570A TW 108107570 A TW108107570 A TW 108107570A TW I785212 B TWI785212 B TW I785212B
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- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9669—Resistance against chemicals, e.g. against molten glass or molten salts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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| US16/279,247 US11014853B2 (en) | 2018-03-07 | 2019-02-19 | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
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Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11229968B2 (en) * | 2011-11-30 | 2022-01-25 | Watlow Electric Manufacturing Company | Semiconductor substrate support with multiple electrodes and method for making same |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| US11469084B2 (en) | 2017-09-05 | 2022-10-11 | Lam Research Corporation | High temperature RF connection with integral thermal choke |
| US11990360B2 (en) | 2018-01-31 | 2024-05-21 | Lam Research Corporation | Electrostatic chuck (ESC) pedestal voltage isolation |
| US11014853B2 (en) | 2018-03-07 | 2021-05-25 | Applied Materials, Inc. | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
| US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| US11183368B2 (en) | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| US11309203B2 (en) * | 2018-11-13 | 2022-04-19 | Samsung Electronics Co., Ltd. | Wafer stage and method of manufacturing the same |
| DE102019101657A1 (de) * | 2019-01-23 | 2020-07-23 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co | Haltevorrichtung zur elektrostatischen Halterung eines Bauteils mit einem durch Diffusionsbonden gefügten Grundkörper und Verfahren zu deren Herstellung |
| USD884855S1 (en) * | 2019-10-30 | 2020-05-19 | Applied Materials, Inc. | Heater pedestal |
| US12249490B2 (en) | 2019-11-05 | 2025-03-11 | Lam Research Corporation | Single crystal metal oxide plasma chamber component |
| CN111620692B (zh) * | 2020-04-15 | 2022-06-07 | 深圳市商德先进陶瓷股份有限公司 | 耐等离子刻蚀陶瓷及其制备方法和等离子刻蚀设备 |
| US11584993B2 (en) | 2020-10-19 | 2023-02-21 | Applied Materials, Inc. | Thermally uniform deposition station |
| WO2022137467A1 (ja) * | 2020-12-24 | 2022-06-30 | トーカロ株式会社 | 静電チャック及び処理装置 |
| CN115527825B (zh) * | 2021-06-25 | 2026-03-17 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理设备、检测装置及其运行方法 |
| CN116313715B (zh) * | 2021-12-20 | 2025-08-01 | 中国石油化工股份有限公司 | 涂覆刀片电极的方法、刀片电极、滑动弧等离子体反应器和等离子体转化甲烷的方法 |
| US20230215702A1 (en) * | 2021-12-30 | 2023-07-06 | Applied Materials, Inc. | Uniformity control for plasma processing using wall recombination |
| CN115261800A (zh) * | 2022-08-26 | 2022-11-01 | 京东方科技集团股份有限公司 | 蒸发源装置及蒸镀设备 |
| US20240266200A1 (en) * | 2023-02-08 | 2024-08-08 | Applied Materials, Inc. | Electrostatic Chuck |
| KR102753084B1 (ko) * | 2023-12-28 | 2025-01-10 | 주식회사 와이컴 | 우수한 평탄도를 가지는 반도체 공정용 트레이 제조방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040229078A1 (en) * | 2003-05-12 | 2004-11-18 | Takao Maeda | Plasma resistant article and method of manufacture |
| US20060100086A1 (en) * | 2004-11-09 | 2006-05-11 | Duetsches Zentrum Fur Luft- Und Raumfahrt Ev | Ceramic material |
| TW201718435A (zh) * | 2013-11-12 | 2017-06-01 | 應用材料股份有限公司 | 基於稀土族氧化物的整體式腔室材料 |
Family Cites Families (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3892198A (en) * | 1974-06-27 | 1975-07-01 | Christopher David Dobson | Enclosures for vacuum coating |
| JPS5642909A (en) | 1979-09-18 | 1981-04-21 | Ngk Insulators Ltd | Solid electrolyte |
| JPS56111456A (en) | 1980-02-07 | 1981-09-03 | Nippon Denso Co Ltd | Solid electrolyte body for oxygen sensor |
| JPS6038350B2 (ja) | 1980-02-07 | 1985-08-31 | 株式会社デンソー | 酸素センサ−用固体電解質体 |
| US4360598A (en) | 1980-03-26 | 1982-11-23 | Ngk Insulators, Ltd. | Zirconia ceramics and a method of producing the same |
| US4303447A (en) * | 1980-04-02 | 1981-12-01 | University Of Illinois Foundation | Low temperature densification of zirconia ceramics |
| US4645716A (en) | 1985-04-09 | 1987-02-24 | The Perkin-Elmer Corporation | Flame spray material |
| JPH0665706A (ja) | 1992-08-19 | 1994-03-08 | Tosoh Corp | 溶射用ジルコニア粉末 |
| JPH0920561A (ja) * | 1995-06-30 | 1997-01-21 | Kyocera Corp | 半導体用セラミック焼結体およびその製造方法 |
| US5968377A (en) * | 1996-05-24 | 1999-10-19 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
| US6069103A (en) | 1996-07-11 | 2000-05-30 | Saint-Gobain/Norton Industrial Ceramics Corporation | LTD resistant, high strength zirconia ceramic |
| US5900283A (en) | 1996-11-12 | 1999-05-04 | General Electric Company | Method for providing a protective coating on a metal-based substrate and related articles |
| US5879523A (en) | 1997-09-29 | 1999-03-09 | Applied Materials, Inc. | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor |
| US5993976A (en) | 1997-11-18 | 1999-11-30 | Sermatech International Inc. | Strain tolerant ceramic coating |
| JP2000001362A (ja) | 1998-06-10 | 2000-01-07 | Nippon Seratekku:Kk | 耐食性セラミックス材料 |
| JP2001102436A (ja) | 1999-05-07 | 2001-04-13 | Applied Materials Inc | 静電チャック及びその製造方法 |
| US6310755B1 (en) | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
| JP4548887B2 (ja) | 1999-12-27 | 2010-09-22 | 京セラ株式会社 | 耐食性セラミック部材およびその製造方法 |
| FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
| TW503449B (en) | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
| US6645585B2 (en) | 2000-05-30 | 2003-11-11 | Kyocera Corporation | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
| JP4688307B2 (ja) | 2000-07-11 | 2011-05-25 | コバレントマテリアル株式会社 | 半導体製造装置用耐プラズマ性部材 |
| US6620520B2 (en) | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
| US7001859B2 (en) | 2001-01-22 | 2006-02-21 | Ohio Aerospace Institute | Low conductivity and sintering-resistant thermal barrier coatings |
| TWI262905B (en) | 2001-11-13 | 2006-10-01 | Tosoh Corp | Quartz glass parts, ceramic parts and process of producing those |
| JP2003146751A (ja) | 2001-11-20 | 2003-05-21 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材及びその製造方法 |
| JP2003238250A (ja) | 2002-02-12 | 2003-08-27 | Yotai Refractories Co Ltd | イットリア質耐火物 |
| US20080264564A1 (en) | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
| US8067067B2 (en) | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
| US6686060B2 (en) | 2002-05-15 | 2004-02-03 | General Electric Company | Thermal barrier coating material |
| US6730422B2 (en) | 2002-08-21 | 2004-05-04 | United Technologies Corporation | Thermal barrier coatings with low thermal conductivity |
| CN1412150A (zh) | 2002-11-19 | 2003-04-23 | 中国科学院兰州化学物理研究所 | 自润滑陶瓷复合材料及制备工艺 |
| KR100599998B1 (ko) | 2003-02-17 | 2006-07-13 | 도시바세라믹스가부시키가이샤 | 산화이트륨 소결체 및 그 제조방법 |
| JP2004269951A (ja) | 2003-03-07 | 2004-09-30 | Tocalo Co Ltd | 耐ハロゲンガス皮膜被覆部材およびその製造方法 |
| US7148167B2 (en) | 2003-08-28 | 2006-12-12 | Kyocera Corporation | Alumina/zirconia ceramics and method of producing the same |
| US7141522B2 (en) | 2003-09-18 | 2006-11-28 | 3M Innovative Properties Company | Ceramics comprising Al2O3, Y2O3, ZrO2 and/or HfO2, and Nb2O5 and/or Ta2O5 and methods of making the same |
| FR2860790B1 (fr) | 2003-10-09 | 2006-07-28 | Snecma Moteurs | Cible destinee a etre evaporee sous faisceau d'electrons, son procede de fabrication, barriere thermique et revetement obtenus a partir d'une cible, et piece mecanique comportant un tel revetement |
| US7220497B2 (en) | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
| JP5046480B2 (ja) | 2004-09-24 | 2012-10-10 | 京セラ株式会社 | 耐食性部材とその製造方法、およびこれを用いた半導体・液晶製造装置用部材 |
| US7052553B1 (en) * | 2004-12-01 | 2006-05-30 | Lam Research Corporation | Wet cleaning of electrostatic chucks |
| CN1278989C (zh) | 2005-05-25 | 2006-10-11 | 宜兴新兴锆业有限公司 | 一种改进的钇部分稳定二氧化锆生产方法 |
| US8603930B2 (en) | 2005-10-07 | 2013-12-10 | Sulzer Metco (Us), Inc. | High-purity fused and crushed zirconia alloy powder and method of producing same |
| JP5125065B2 (ja) | 2006-02-17 | 2013-01-23 | 東ソー株式会社 | 透明ジルコニア焼結体 |
| US8728967B2 (en) | 2006-05-26 | 2014-05-20 | Praxair S.T. Technology, Inc. | High purity powders |
| JP4936948B2 (ja) | 2007-03-27 | 2012-05-23 | 日本碍子株式会社 | 複合材料及びその製造方法 |
| US7696117B2 (en) | 2007-04-27 | 2010-04-13 | Applied Materials, Inc. | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| TWI654159B (zh) | 2007-04-27 | 2019-03-21 | 美商應用材料股份有限公司 | 減小曝露於含鹵素電漿下之表面腐蝕速率的方法與設備 |
| US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
| US8367227B2 (en) * | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
| US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
| WO2010053687A2 (en) | 2008-11-04 | 2010-05-14 | Praxair Technology, Inc. | Thermal spray coatings for semiconductor applications |
| JP5545803B2 (ja) | 2009-06-30 | 2014-07-09 | 太平洋セメント株式会社 | セラミックス多孔質焼結体の製造方法 |
| US9725799B2 (en) * | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
| JP6103046B2 (ja) | 2014-03-10 | 2017-03-29 | 住友大阪セメント株式会社 | 誘電体材料、静電チャック装置 |
| US10730798B2 (en) | 2014-05-07 | 2020-08-04 | Applied Materials, Inc. | Slurry plasma spray of plasma resistant ceramic coating |
| US10385459B2 (en) * | 2014-05-16 | 2019-08-20 | Applied Materials, Inc. | Advanced layered bulk ceramics via field assisted sintering technology |
| US10431435B2 (en) * | 2014-08-01 | 2019-10-01 | Applied Materials, Inc. | Wafer carrier with independent isolated heater zones |
| JP6489467B2 (ja) | 2014-09-05 | 2019-03-27 | 国立大学法人 香川大学 | 複合酸化物セラミックスおよび半導体製造装置の構成部材 |
| US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
| US20170140902A1 (en) | 2015-11-16 | 2017-05-18 | Coorstek, Inc. | Corrosion-resistant components and methods of making |
| KR102553629B1 (ko) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US20180251406A1 (en) * | 2017-03-06 | 2018-09-06 | Applied Materials, Inc. | Sintered ceramic protective layer formed by hot pressing |
| US20180327892A1 (en) * | 2017-05-10 | 2018-11-15 | Applied Materials, Inc. | Metal oxy-flouride films for chamber components |
| US20180337026A1 (en) * | 2017-05-19 | 2018-11-22 | Applied Materials, Inc. | Erosion resistant atomic layer deposition coatings |
| US11014853B2 (en) * | 2018-03-07 | 2021-05-25 | Applied Materials, Inc. | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040229078A1 (en) * | 2003-05-12 | 2004-11-18 | Takao Maeda | Plasma resistant article and method of manufacture |
| US20060100086A1 (en) * | 2004-11-09 | 2006-05-11 | Duetsches Zentrum Fur Luft- Und Raumfahrt Ev | Ceramic material |
| TW201718435A (zh) * | 2013-11-12 | 2017-06-01 | 應用材料股份有限公司 | 基於稀土族氧化物的整體式腔室材料 |
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| JP7292060B2 (ja) | 2023-06-16 |
| US20210230070A1 (en) | 2021-07-29 |
| US20190276366A1 (en) | 2019-09-12 |
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