JP2019194351A - プラズマ環境にあるチャンバ構成要素のためのY2O3−ZrO2耐エロージョン性材料 - Google Patents
プラズマ環境にあるチャンバ構成要素のためのY2O3−ZrO2耐エロージョン性材料 Download PDFInfo
- Publication number
- JP2019194351A JP2019194351A JP2019042015A JP2019042015A JP2019194351A JP 2019194351 A JP2019194351 A JP 2019194351A JP 2019042015 A JP2019042015 A JP 2019042015A JP 2019042015 A JP2019042015 A JP 2019042015A JP 2019194351 A JP2019194351 A JP 2019194351A
- Authority
- JP
- Japan
- Prior art keywords
- zro
- chamber
- ceramic
- ceramic body
- inches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003628 erosive effect Effects 0.000 title description 14
- 239000000463 material Substances 0.000 title description 13
- 229910009474 Y2O3—ZrO2 Inorganic materials 0.000 title 1
- 239000000919 ceramic Substances 0.000 claims abstract description 141
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims description 64
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000000843 powder Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000003754 machining Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 8
- 238000000746 purification Methods 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000009694 cold isostatic pressing Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 43
- 239000000758 substrate Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 22
- 239000007787 solid Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 238000005245 sintering Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910021654 trace metal Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 229910016569 AlF 3 Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005524 ceramic coating Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000000869 ion-assisted deposition Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000007524 flame polishing Methods 0.000 description 1
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
- C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/638—Removal thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0072—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5042—Zirconium oxides or zirconates; Hafnium oxides or hafnates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/604—Pressing at temperatures other than sintering temperatures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/612—Machining
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/94—Products characterised by their shape
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/95—Products characterised by their size, e.g. microceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9661—Colour
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9669—Resistance against chemicals, e.g. against molten glass or molten salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Drying Of Semiconductors (AREA)
- Ceramic Products (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (15)
- 1つ以上の相のY2O3−ZrO2から実質的に構成される焼結セラミック材料から成るセラミック体を含み、焼結セラミック材料は、55〜65mol%のY2O3及び35〜45mol%のZrO2から実質的に構成されている、処理チャンバ用のチャンバ構成要素。
- チャンバ構成要素は、
セラミック体から成るノズルであって、複数のガス送出貫通孔を備えるノズル、
処理チャンバへの湾曲したドアであって、セラミック体の厚さは約0.5〜1.5インチ、長さは約3〜6インチ、高さは約10〜14インチである湾曲したドア、
セラミック体から成る蓋であって、セラミック体の厚さは約1〜2インチ、直径は約19〜23インチである蓋、
約1インチの厚さ及び約20〜22インチの直径を有する耐荷重性ガス送出プレート、
又は約1〜2.5インチの厚さ、約11〜15インチの内径、及び約12〜16インチの外径を有するリング、のうちのいずれか1つを備える、請求項1に記載のチャンバ構成要素。 - チャンバ構成要素は静電チャックであり、
セラミック体は静電チャック用のパックであり、
チャンバ構成要素は、セラミック体の下面に接合された熱伝導性ベースをさらに備え、
熱伝導性ベースはAlから実質的に構成され、
熱伝導性ベースの側壁は、Al2O3の陽極酸化層を備える、請求項1に記載のチャンバ構成要素。 - チャンバ構成要素は、ウェハを支持し加熱するように構成されたヒータであり、セラミック体は平坦なセラミックヒータプレートであり、
チャンバ構成要素は、平坦なセラミックヒータプレートに接合された漏斗形状の軸をさらに備える、請求項1に記載のチャンバ構成要素。 - セラミック材料が、約9.1〜9.4のビッカース硬さを有する、請求項1〜4のいずれか1項に記載のチャンバ構成要素。
- セラミック材料が、約9.4〜9.6の熱膨張係数を有する、請求項1〜5のいずれか1項に記載のチャンバ構成要素。
- セラミック材料が、約500〜600V/ミルの耐絶縁破壊性を有する、請求項1〜6のいずれか1項に記載のチャンバ構成要素。
- セラミック材料が、約139.4〜150MPaの平均曲げ強度を有する、請求項1〜7のいずれか1項に記載のチャンバ構成要素。
- 焼結セラミック材料が、99.9%を超える純度を有する、請求項1〜8のいずれか1項に記載のチャンバ構成要素。
- 焼結セラミック材料が57〜63mol%のY2O3及び37〜43mol%のZrO2から実質的に構成されている、請求項1〜9のいずれか1項に記載のチャンバ構成要素。
- 焼結セラミック材料が58〜62mol%のY2O3及び38〜42mol%のZrO2から実質的に構成されている、請求項1〜9のいずれか1項に記載のチャンバ構成要素。
- 処理チャンバ用のチャンバ構成要素を製造する方法であって、
Y2O3粉末とZrO2粉末を混合して、55〜65mol%のY2O3及び35〜45mol%のZrO2から実質的に構成されるY2O3−ZrO2粉末を形成する工程と、
Y2O3−ZrO2粉末を使用して冷間等方圧加圧を実行し、チャンバ構成要素のおおよその形状を有するグリーン体を形成する工程と、
グリーン体に第1熱処理を施して、グリーン体の有機バインダを熱して除く工程と、
続いて、約1750〜1900℃の温度でグリーン体に第2熱処理を施して、グリーン体を焼結し、1つ以上の相のY2O3−ZrO2から実質的に構成される焼結セラミック体を製造する工程であって、焼結セラミック体は、55〜65mol%のY2O3及び35〜45mol%のZrO2から実質的に構成されている工程と、
焼結セラミック体に機械加工を行う工程と、
焼結セラミック体に対して精製プロセスを実行して、焼結セラミック体から微量金属を除去する工程とを含む方法。 - Y2O3粉末は少なくとも99.99%の純度を有し、ZrO2粉末は少なくとも99.8%の純度を有する、請求項12に記載の方法。
- 焼結セラミック体の機械加工を行った後に、焼結セラミック体に第3熱処理を施す工程であって、第3熱処理は、約1000〜1400℃の温度で行われ、焼結セラミック体の色を均質化する工程と、
第3熱処理を行った後であって精製プロセスを行う前に、焼結セラミック体に更なる機械加工プロセスを行う工程とをさらに含む、請求項12又は13に記載の方法。 - 焼結セラミック体が59〜61mol%のY2O3及び39〜41mol%のZrO2から実質的に構成されている、請求項12〜14のいずれか1項に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023092894A JP2023116597A (ja) | 2018-03-07 | 2023-06-06 | プラズマ環境にあるチャンバ構成要素のためのY2O3-ZrO2耐エロージョン性材料 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862639941P | 2018-03-07 | 2018-03-07 | |
US62/639,941 | 2018-03-07 | ||
US16/279,247 US11014853B2 (en) | 2018-03-07 | 2019-02-19 | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
US16/279,247 | 2019-02-19 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023092894A Division JP2023116597A (ja) | 2018-03-07 | 2023-06-06 | プラズマ環境にあるチャンバ構成要素のためのY2O3-ZrO2耐エロージョン性材料 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019194351A true JP2019194351A (ja) | 2019-11-07 |
JP2019194351A5 JP2019194351A5 (ja) | 2022-04-01 |
JP7292060B2 JP7292060B2 (ja) | 2023-06-16 |
Family
ID=67843180
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019042015A Active JP7292060B2 (ja) | 2018-03-07 | 2019-03-07 | プラズマ環境にあるチャンバ構成要素のためのY2O3-ZrO2耐エロージョン性材料 |
JP2023092894A Pending JP2023116597A (ja) | 2018-03-07 | 2023-06-06 | プラズマ環境にあるチャンバ構成要素のためのY2O3-ZrO2耐エロージョン性材料 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023092894A Pending JP2023116597A (ja) | 2018-03-07 | 2023-06-06 | プラズマ環境にあるチャンバ構成要素のためのY2O3-ZrO2耐エロージョン性材料 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11014853B2 (ja) |
JP (2) | JP7292060B2 (ja) |
KR (2) | KR102422725B1 (ja) |
CN (1) | CN110240481A (ja) |
TW (2) | TW202311202A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023129198A1 (en) * | 2021-12-30 | 2023-07-06 | Applied Materials, Inc. | Uniformity control for plasma processing using wall recombination |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11229968B2 (en) * | 2011-11-30 | 2022-01-25 | Watlow Electric Manufacturing Company | Semiconductor substrate support with multiple electrodes and method for making same |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
KR102655866B1 (ko) | 2018-01-31 | 2024-04-05 | 램 리써치 코포레이션 | 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리 |
US11014853B2 (en) * | 2018-03-07 | 2021-05-25 | Applied Materials, Inc. | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
US11309203B2 (en) * | 2018-11-13 | 2022-04-19 | Samsung Electronics Co., Ltd. | Wafer stage and method of manufacturing the same |
DE102019101657A1 (de) * | 2019-01-23 | 2020-07-23 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co | Haltevorrichtung zur elektrostatischen Halterung eines Bauteils mit einem durch Diffusionsbonden gefügten Grundkörper und Verfahren zu deren Herstellung |
USD884855S1 (en) * | 2019-10-30 | 2020-05-19 | Applied Materials, Inc. | Heater pedestal |
KR20220097459A (ko) * | 2019-11-05 | 2022-07-07 | 램 리써치 코포레이션 | 단일 결정 금속 옥사이드 플라즈마 챔버 컴포넌트 |
CN111620692B (zh) * | 2020-04-15 | 2022-06-07 | 深圳市商德先进陶瓷股份有限公司 | 耐等离子刻蚀陶瓷及其制备方法和等离子刻蚀设备 |
US11584993B2 (en) | 2020-10-19 | 2023-02-21 | Applied Materials, Inc. | Thermally uniform deposition station |
JP7234459B2 (ja) * | 2020-12-24 | 2023-03-07 | トーカロ株式会社 | 静電チャック及び処理装置 |
CN115527825A (zh) * | 2021-06-25 | 2022-12-27 | 中微半导体设备(上海)股份有限公司 | 一种用于等离子体处理设备的检测装置及等离子体处理设备 |
CN115261800A (zh) * | 2022-08-26 | 2022-11-01 | 京东方科技集团股份有限公司 | 蒸发源装置及蒸镀设备 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3892198A (en) * | 1974-06-27 | 1975-07-01 | Christopher David Dobson | Enclosures for vacuum coating |
JPH0920561A (ja) * | 1995-06-30 | 1997-01-21 | Kyocera Corp | 半導体用セラミック焼結体およびその製造方法 |
JP2001102436A (ja) * | 1999-05-07 | 2001-04-13 | Applied Materials Inc | 静電チャック及びその製造方法 |
JP2008239385A (ja) * | 2007-03-27 | 2008-10-09 | Ngk Insulators Ltd | 複合材料及びその製造方法 |
JP2011011929A (ja) * | 2009-06-30 | 2011-01-20 | Taiheiyo Cement Corp | セラミックス多孔質焼結体、半導体製造装置用部品及びシャワープレート並びにセラミックス多孔質焼結体の製造方法 |
JP2012116749A (ja) * | 2007-04-27 | 2012-06-21 | Applied Materials Inc | ハロゲン含有プラズマに露出された表面の浸食速度を減じる装置及び方法 |
WO2015137270A1 (ja) * | 2014-03-10 | 2015-09-17 | 住友大阪セメント株式会社 | 誘電体材料及び静電チャック装置 |
US20150329430A1 (en) * | 2014-05-16 | 2015-11-19 | Applied Materials, Inc. | Advanced layered bulk ceramics via field assisted sintering technology |
JP2016056037A (ja) * | 2014-09-05 | 2016-04-21 | 国立大学法人 香川大学 | 複合酸化物セラミックスおよび半導体製造装置の構成部材 |
US20170140902A1 (en) * | 2015-11-16 | 2017-05-18 | Coorstek, Inc. | Corrosion-resistant components and methods of making |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5642909A (en) | 1979-09-18 | 1981-04-21 | Ngk Insulators Ltd | Solid electrolyte |
JPS56111456A (en) | 1980-02-07 | 1981-09-03 | Nippon Denso Co Ltd | Solid electrolyte body for oxygen sensor |
JPS6038350B2 (ja) | 1980-02-07 | 1985-08-31 | 株式会社デンソー | 酸素センサ−用固体電解質体 |
US4360598A (en) | 1980-03-26 | 1982-11-23 | Ngk Insulators, Ltd. | Zirconia ceramics and a method of producing the same |
US4303447A (en) * | 1980-04-02 | 1981-12-01 | University Of Illinois Foundation | Low temperature densification of zirconia ceramics |
US4645716A (en) | 1985-04-09 | 1987-02-24 | The Perkin-Elmer Corporation | Flame spray material |
JPH0665706A (ja) | 1992-08-19 | 1994-03-08 | Tosoh Corp | 溶射用ジルコニア粉末 |
CA2205817C (en) * | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
US6069103A (en) | 1996-07-11 | 2000-05-30 | Saint-Gobain/Norton Industrial Ceramics Corporation | LTD resistant, high strength zirconia ceramic |
US5900283A (en) | 1996-11-12 | 1999-05-04 | General Electric Company | Method for providing a protective coating on a metal-based substrate and related articles |
US5879523A (en) | 1997-09-29 | 1999-03-09 | Applied Materials, Inc. | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor |
US5993976A (en) | 1997-11-18 | 1999-11-30 | Sermatech International Inc. | Strain tolerant ceramic coating |
JP2000001362A (ja) | 1998-06-10 | 2000-01-07 | Nippon Seratekku:Kk | 耐食性セラミックス材料 |
US6310755B1 (en) | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
JP4548887B2 (ja) | 1999-12-27 | 2010-09-22 | 京セラ株式会社 | 耐食性セラミック部材およびその製造方法 |
FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
TW503449B (en) | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
US6645585B2 (en) | 2000-05-30 | 2003-11-11 | Kyocera Corporation | Container for treating with corrosive-gas and plasma and method for manufacturing the same |
JP4688307B2 (ja) | 2000-07-11 | 2011-05-25 | コバレントマテリアル株式会社 | 半導体製造装置用耐プラズマ性部材 |
US6620520B2 (en) | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
US7001859B2 (en) | 2001-01-22 | 2006-02-21 | Ohio Aerospace Institute | Low conductivity and sintering-resistant thermal barrier coatings |
TWI262905B (en) | 2001-11-13 | 2006-10-01 | Tosoh Corp | Quartz glass parts, ceramic parts and process of producing those |
JP2003146751A (ja) | 2001-11-20 | 2003-05-21 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材及びその製造方法 |
JP2003238250A (ja) | 2002-02-12 | 2003-08-27 | Yotai Refractories Co Ltd | イットリア質耐火物 |
US8067067B2 (en) | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
US20080264564A1 (en) | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
US6686060B2 (en) | 2002-05-15 | 2004-02-03 | General Electric Company | Thermal barrier coating material |
US6730422B2 (en) | 2002-08-21 | 2004-05-04 | United Technologies Corporation | Thermal barrier coatings with low thermal conductivity |
CN1412150A (zh) | 2002-11-19 | 2003-04-23 | 中国科学院兰州化学物理研究所 | 自润滑陶瓷复合材料及制备工艺 |
KR100599998B1 (ko) | 2003-02-17 | 2006-07-13 | 도시바세라믹스가부시키가이샤 | 산화이트륨 소결체 및 그 제조방법 |
JP2004269951A (ja) | 2003-03-07 | 2004-09-30 | Tocalo Co Ltd | 耐ハロゲンガス皮膜被覆部材およびその製造方法 |
JP2004332081A (ja) * | 2003-05-12 | 2004-11-25 | Shin Etsu Chem Co Ltd | 耐プラズマ部材及びその製造方法 |
US7148167B2 (en) | 2003-08-28 | 2006-12-12 | Kyocera Corporation | Alumina/zirconia ceramics and method of producing the same |
US7141522B2 (en) | 2003-09-18 | 2006-11-28 | 3M Innovative Properties Company | Ceramics comprising Al2O3, Y2O3, ZrO2 and/or HfO2, and Nb2O5 and/or Ta2O5 and methods of making the same |
FR2860790B1 (fr) | 2003-10-09 | 2006-07-28 | Snecma Moteurs | Cible destinee a etre evaporee sous faisceau d'electrons, son procede de fabrication, barriere thermique et revetement obtenus a partir d'une cible, et piece mecanique comportant un tel revetement |
US7220497B2 (en) | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
JP5046480B2 (ja) | 2004-09-24 | 2012-10-10 | 京セラ株式会社 | 耐食性部材とその製造方法、およびこれを用いた半導体・液晶製造装置用部材 |
DE102004053959B4 (de) * | 2004-11-09 | 2007-09-27 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Keramikmaterial und seine Verwendung sowie Verfahren zur Herstellung von Beschichtungen mit dem Keramikmaterial |
CN1278989C (zh) | 2005-05-25 | 2006-10-11 | 宜兴新兴锆业有限公司 | 一种改进的钇部分稳定二氧化锆生产方法 |
US8603930B2 (en) | 2005-10-07 | 2013-12-10 | Sulzer Metco (Us), Inc. | High-purity fused and crushed zirconia alloy powder and method of producing same |
JP5125065B2 (ja) | 2006-02-17 | 2013-01-23 | 東ソー株式会社 | 透明ジルコニア焼結体 |
US8728967B2 (en) | 2006-05-26 | 2014-05-20 | Praxair S.T. Technology, Inc. | High purity powders |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
US7696117B2 (en) | 2007-04-27 | 2010-04-13 | Applied Materials, Inc. | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US8367227B2 (en) * | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
US20100272982A1 (en) | 2008-11-04 | 2010-10-28 | Graeme Dickinson | Thermal spray coatings for semiconductor applications |
US9440886B2 (en) * | 2013-11-12 | 2016-09-13 | Applied Materials, Inc. | Rare-earth oxide based monolithic chamber material |
US9725799B2 (en) * | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
US10730798B2 (en) | 2014-05-07 | 2020-08-04 | Applied Materials, Inc. | Slurry plasma spray of plasma resistant ceramic coating |
US10431435B2 (en) * | 2014-08-01 | 2019-10-01 | Applied Materials, Inc. | Wafer carrier with independent isolated heater zones |
US11384432B2 (en) * | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
KR102553629B1 (ko) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US20180251406A1 (en) * | 2017-03-06 | 2018-09-06 | Applied Materials, Inc. | Sintered ceramic protective layer formed by hot pressing |
US10563303B2 (en) * | 2017-05-10 | 2020-02-18 | Applied Materials, Inc. | Metal oxy-flouride films based on oxidation of metal flourides |
US20180337026A1 (en) * | 2017-05-19 | 2018-11-22 | Applied Materials, Inc. | Erosion resistant atomic layer deposition coatings |
US11014853B2 (en) * | 2018-03-07 | 2021-05-25 | Applied Materials, Inc. | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
-
2019
- 2019-02-19 US US16/279,247 patent/US11014853B2/en active Active
- 2019-03-06 KR KR1020190025965A patent/KR102422725B1/ko active IP Right Grant
- 2019-03-07 JP JP2019042015A patent/JP7292060B2/ja active Active
- 2019-03-07 TW TW111141548A patent/TW202311202A/zh unknown
- 2019-03-07 TW TW108107570A patent/TWI785212B/zh active
- 2019-03-07 CN CN201910173809.7A patent/CN110240481A/zh active Pending
-
2021
- 2021-04-15 US US17/232,013 patent/US11667577B2/en active Active
-
2022
- 2022-07-13 KR KR1020220086318A patent/KR102644068B1/ko active IP Right Grant
-
2023
- 2023-06-06 JP JP2023092894A patent/JP2023116597A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3892198A (en) * | 1974-06-27 | 1975-07-01 | Christopher David Dobson | Enclosures for vacuum coating |
JPH0920561A (ja) * | 1995-06-30 | 1997-01-21 | Kyocera Corp | 半導体用セラミック焼結体およびその製造方法 |
JP2001102436A (ja) * | 1999-05-07 | 2001-04-13 | Applied Materials Inc | 静電チャック及びその製造方法 |
JP2008239385A (ja) * | 2007-03-27 | 2008-10-09 | Ngk Insulators Ltd | 複合材料及びその製造方法 |
JP2012116749A (ja) * | 2007-04-27 | 2012-06-21 | Applied Materials Inc | ハロゲン含有プラズマに露出された表面の浸食速度を減じる装置及び方法 |
JP2011011929A (ja) * | 2009-06-30 | 2011-01-20 | Taiheiyo Cement Corp | セラミックス多孔質焼結体、半導体製造装置用部品及びシャワープレート並びにセラミックス多孔質焼結体の製造方法 |
WO2015137270A1 (ja) * | 2014-03-10 | 2015-09-17 | 住友大阪セメント株式会社 | 誘電体材料及び静電チャック装置 |
US20150329430A1 (en) * | 2014-05-16 | 2015-11-19 | Applied Materials, Inc. | Advanced layered bulk ceramics via field assisted sintering technology |
JP2016056037A (ja) * | 2014-09-05 | 2016-04-21 | 国立大学法人 香川大学 | 複合酸化物セラミックスおよび半導体製造装置の構成部材 |
US20170140902A1 (en) * | 2015-11-16 | 2017-05-18 | Coorstek, Inc. | Corrosion-resistant components and methods of making |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023129198A1 (en) * | 2021-12-30 | 2023-07-06 | Applied Materials, Inc. | Uniformity control for plasma processing using wall recombination |
Also Published As
Publication number | Publication date |
---|---|
US11667577B2 (en) | 2023-06-06 |
KR20220104120A (ko) | 2022-07-26 |
TWI785212B (zh) | 2022-12-01 |
KR102644068B1 (ko) | 2024-03-05 |
KR102422725B1 (ko) | 2022-07-18 |
KR20190106768A (ko) | 2019-09-18 |
TW201945321A (zh) | 2019-12-01 |
JP7292060B2 (ja) | 2023-06-16 |
US20190276366A1 (en) | 2019-09-12 |
US20210230070A1 (en) | 2021-07-29 |
TW202311202A (zh) | 2023-03-16 |
JP2023116597A (ja) | 2023-08-22 |
CN110240481A (zh) | 2019-09-17 |
US11014853B2 (en) | 2021-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7292060B2 (ja) | プラズマ環境にあるチャンバ構成要素のためのY2O3-ZrO2耐エロージョン性材料 | |
US10934216B2 (en) | Rare-earth oxide based chamber material | |
JP2019108612A (ja) | プラズマ耐食性希土類酸化物系薄膜コーティング |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220302 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220324 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20220324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220804 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220920 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20221220 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230307 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230523 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230606 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7292060 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |