JP2026012177A5 - - Google Patents

Info

Publication number
JP2026012177A5
JP2026012177A5 JP2025154654A JP2025154654A JP2026012177A5 JP 2026012177 A5 JP2026012177 A5 JP 2026012177A5 JP 2025154654 A JP2025154654 A JP 2025154654A JP 2025154654 A JP2025154654 A JP 2025154654A JP 2026012177 A5 JP2026012177 A5 JP 2026012177A5
Authority
JP
Japan
Prior art keywords
sintered ceramic
ceramic body
zro2
mol
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025154654A
Other languages
English (en)
Japanese (ja)
Other versions
JP2026012177A (ja
Filing date
Publication date
Priority claimed from US16/279,247 external-priority patent/US11014853B2/en
Application filed filed Critical
Publication of JP2026012177A publication Critical patent/JP2026012177A/ja
Publication of JP2026012177A5 publication Critical patent/JP2026012177A5/ja
Pending legal-status Critical Current

Links

JP2025154654A 2018-03-07 2025-09-18 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料 Pending JP2026012177A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862639941P 2018-03-07 2018-03-07
US62/639,941 2018-03-07
US16/279,247 2019-02-19
US16/279,247 US11014853B2 (en) 2018-03-07 2019-02-19 Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
JP2019042015A JP7292060B2 (ja) 2018-03-07 2019-03-07 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2023092894A JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2023092894A Division JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Publications (2)

Publication Number Publication Date
JP2026012177A JP2026012177A (ja) 2026-01-23
JP2026012177A5 true JP2026012177A5 (https=) 2026-04-14

Family

ID=67843180

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2019042015A Active JP7292060B2 (ja) 2018-03-07 2019-03-07 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2023092894A Pending JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2025154654A Pending JP2026012177A (ja) 2018-03-07 2025-09-18 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2019042015A Active JP7292060B2 (ja) 2018-03-07 2019-03-07 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料
JP2023092894A Pending JP2023116597A (ja) 2018-03-07 2023-06-06 プラズマ環境にあるチャンバ構成要素のためのＹ２Ｏ３－ＺｒＯ２耐エロージョン性材料

Country Status (5)

Country Link
US (2) US11014853B2 (https=)
JP (3) JP7292060B2 (https=)
KR (2) KR102422725B1 (https=)
CN (2) CN110240481A (https=)
TW (2) TWI785212B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11229968B2 (en) * 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11990360B2 (en) 2018-01-31 2024-05-21 Lam Research Corporation Electrostatic chuck (ESC) pedestal voltage isolation
US11014853B2 (en) 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US11309203B2 (en) * 2018-11-13 2022-04-19 Samsung Electronics Co., Ltd. Wafer stage and method of manufacturing the same
DE102019101657A1 (de) * 2019-01-23 2020-07-23 Berliner Glas Kgaa Herbert Kubatz Gmbh & Co Haltevorrichtung zur elektrostatischen Halterung eines Bauteils mit einem durch Diffusionsbonden gefügten Grundkörper und Verfahren zu deren Herstellung
USD884855S1 (en) * 2019-10-30 2020-05-19 Applied Materials, Inc. Heater pedestal
US12249490B2 (en) 2019-11-05 2025-03-11 Lam Research Corporation Single crystal metal oxide plasma chamber component
CN111620692B (zh) * 2020-04-15 2022-06-07 深圳市商德先进陶瓷股份有限公司 耐等离子刻蚀陶瓷及其制备方法和等离子刻蚀设备
US11584993B2 (en) 2020-10-19 2023-02-21 Applied Materials, Inc. Thermally uniform deposition station
WO2022137467A1 (ja) * 2020-12-24 2022-06-30 トーカロ株式会社 静電チャック及び処理装置
CN115527825B (zh) * 2021-06-25 2026-03-17 中微半导体设备(上海)股份有限公司 一种等离子体处理设备、检测装置及其运行方法
CN116313715B (zh) * 2021-12-20 2025-08-01 中国石油化工股份有限公司 涂覆刀片电极的方法、刀片电极、滑动弧等离子体反应器和等离子体转化甲烷的方法
US20230215702A1 (en) * 2021-12-30 2023-07-06 Applied Materials, Inc. Uniformity control for plasma processing using wall recombination
CN115261800A (zh) * 2022-08-26 2022-11-01 京东方科技集团股份有限公司 蒸发源装置及蒸镀设备
US20240266200A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Electrostatic Chuck
KR102753084B1 (ko) * 2023-12-28 2025-01-10 주식회사 와이컴 우수한 평탄도를 가지는 반도체 공정용 트레이 제조방법

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892198A (en) * 1974-06-27 1975-07-01 Christopher David Dobson Enclosures for vacuum coating
JPS5642909A (en) 1979-09-18 1981-04-21 Ngk Insulators Ltd Solid electrolyte
JPS56111456A (en) 1980-02-07 1981-09-03 Nippon Denso Co Ltd Solid electrolyte body for oxygen sensor
JPS6038350B2 (ja) 1980-02-07 1985-08-31 株式会社デンソー 酸素センサ−用固体電解質体
US4360598A (en) 1980-03-26 1982-11-23 Ngk Insulators, Ltd. Zirconia ceramics and a method of producing the same
US4303447A (en) * 1980-04-02 1981-12-01 University Of Illinois Foundation Low temperature densification of zirconia ceramics
US4645716A (en) 1985-04-09 1987-02-24 The Perkin-Elmer Corporation Flame spray material
JPH0665706A (ja) 1992-08-19 1994-03-08 Tosoh Corp 溶射用ジルコニア粉末
JPH0920561A (ja) * 1995-06-30 1997-01-21 Kyocera Corp 半導体用セラミック焼結体およびその製造方法
US5968377A (en) * 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
US6069103A (en) 1996-07-11 2000-05-30 Saint-Gobain/Norton Industrial Ceramics Corporation LTD resistant, high strength zirconia ceramic
US5900283A (en) 1996-11-12 1999-05-04 General Electric Company Method for providing a protective coating on a metal-based substrate and related articles
US5879523A (en) 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US5993976A (en) 1997-11-18 1999-11-30 Sermatech International Inc. Strain tolerant ceramic coating
JP2000001362A (ja) 1998-06-10 2000-01-07 Nippon Seratekku:Kk 耐食性セラミックス材料
JP2001102436A (ja) 1999-05-07 2001-04-13 Applied Materials Inc 静電チャック及びその製造方法
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP4548887B2 (ja) 1999-12-27 2010-09-22 京セラ株式会社 耐食性セラミック部材およびその製造方法
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
JP4688307B2 (ja) 2000-07-11 2011-05-25 コバレントマテリアル株式会社 半導体製造装置用耐プラズマ性部材
US6620520B2 (en) 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
US7001859B2 (en) 2001-01-22 2006-02-21 Ohio Aerospace Institute Low conductivity and sintering-resistant thermal barrier coatings
TWI262905B (en) 2001-11-13 2006-10-01 Tosoh Corp Quartz glass parts, ceramic parts and process of producing those
JP2003146751A (ja) 2001-11-20 2003-05-21 Toshiba Ceramics Co Ltd 耐プラズマ性部材及びその製造方法
JP2003238250A (ja) 2002-02-12 2003-08-27 Yotai Refractories Co Ltd イットリア質耐火物
US20080264564A1 (en) 2007-04-27 2008-10-30 Applied Materials, Inc. Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
US8067067B2 (en) 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US6686060B2 (en) 2002-05-15 2004-02-03 General Electric Company Thermal barrier coating material
US6730422B2 (en) 2002-08-21 2004-05-04 United Technologies Corporation Thermal barrier coatings with low thermal conductivity
CN1412150A (zh) 2002-11-19 2003-04-23 中国科学院兰州化学物理研究所 自润滑陶瓷复合材料及制备工艺
KR100599998B1 (ko) 2003-02-17 2006-07-13 도시바세라믹스가부시키가이샤 산화이트륨 소결체 및 그 제조방법
JP2004269951A (ja) 2003-03-07 2004-09-30 Tocalo Co Ltd 耐ハロゲンガス皮膜被覆部材およびその製造方法
JP2004332081A (ja) * 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 耐プラズマ部材及びその製造方法
US7148167B2 (en) 2003-08-28 2006-12-12 Kyocera Corporation Alumina/zirconia ceramics and method of producing the same
US7141522B2 (en) 2003-09-18 2006-11-28 3M Innovative Properties Company Ceramics comprising Al2O3, Y2O3, ZrO2 and/or HfO2, and Nb2O5 and/or Ta2O5 and methods of making the same
FR2860790B1 (fr) 2003-10-09 2006-07-28 Snecma Moteurs Cible destinee a etre evaporee sous faisceau d'electrons, son procede de fabrication, barriere thermique et revetement obtenus a partir d'une cible, et piece mecanique comportant un tel revetement
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
JP5046480B2 (ja) 2004-09-24 2012-10-10 京セラ株式会社 耐食性部材とその製造方法、およびこれを用いた半導体・液晶製造装置用部材
DE102004053959B4 (de) * 2004-11-09 2007-09-27 Deutsches Zentrum für Luft- und Raumfahrt e.V. Keramikmaterial und seine Verwendung sowie Verfahren zur Herstellung von Beschichtungen mit dem Keramikmaterial
US7052553B1 (en) * 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
CN1278989C (zh) 2005-05-25 2006-10-11 宜兴新兴锆业有限公司 一种改进的钇部分稳定二氧化锆生产方法
US8603930B2 (en) 2005-10-07 2013-12-10 Sulzer Metco (Us), Inc. High-purity fused and crushed zirconia alloy powder and method of producing same
JP5125065B2 (ja) 2006-02-17 2013-01-23 東ソー株式会社 透明ジルコニア焼結体
US8728967B2 (en) 2006-05-26 2014-05-20 Praxair S.T. Technology, Inc. High purity powders
JP4936948B2 (ja) 2007-03-27 2012-05-23 日本碍子株式会社 複合材料及びその製造方法
US7696117B2 (en) 2007-04-27 2010-04-13 Applied Materials, Inc. Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
TWI654159B (zh) 2007-04-27 2019-03-21 美商應用材料股份有限公司 減小曝露於含鹵素電漿下之表面腐蝕速率的方法與設備
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US8367227B2 (en) * 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
WO2010053687A2 (en) 2008-11-04 2010-05-14 Praxair Technology, Inc. Thermal spray coatings for semiconductor applications
JP5545803B2 (ja) 2009-06-30 2014-07-09 太平洋セメント株式会社 セラミックス多孔質焼結体の製造方法
US9440886B2 (en) * 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) * 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP6103046B2 (ja) 2014-03-10 2017-03-29 住友大阪セメント株式会社 誘電体材料、静電チャック装置
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10385459B2 (en) * 2014-05-16 2019-08-20 Applied Materials, Inc. Advanced layered bulk ceramics via field assisted sintering technology
US10431435B2 (en) * 2014-08-01 2019-10-01 Applied Materials, Inc. Wafer carrier with independent isolated heater zones
JP6489467B2 (ja) 2014-09-05 2019-03-27 国立大学法人 香川大学 複合酸化物セラミックスおよび半導体製造装置の構成部材
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US20170140902A1 (en) 2015-11-16 2017-05-18 Coorstek, Inc. Corrosion-resistant components and methods of making
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US20180251406A1 (en) * 2017-03-06 2018-09-06 Applied Materials, Inc. Sintered ceramic protective layer formed by hot pressing
US20180327892A1 (en) * 2017-05-10 2018-11-15 Applied Materials, Inc. Metal oxy-flouride films for chamber components
US20180337026A1 (en) * 2017-05-19 2018-11-22 Applied Materials, Inc. Erosion resistant atomic layer deposition coatings
US11014853B2 (en) * 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments

Similar Documents

Publication Publication Date Title
JP2026012177A5 (https=)
JP4467453B2 (ja) セラミックス部材及びその製造方法
TW523858B (en) Semiconductor manufacturing apparatus having wafer holder for semiconductor manufacturing apparatus
US11673842B2 (en) Method for manufacturing large ceramic co-fired articles
TWI445682B (zh) Alumina sintered body, and its manufacturing method and semiconductor manufacturing device parts
KR101710203B1 (ko) 알루미나 소결체, 그 제법 및 반도체 제조 장치 부재
WO2002042241A1 (en) Aluminum nitride sintered body, method for producing aluminum nitride sintered body, ceramic substrate and method for producing ceramic substrate
JP2023518438A (ja) 多層複合セラミックスプレート及びその製造方法
JP2016225015A (ja) 加熱装置及びその製造方法
JP7220527B2 (ja) 焼成用道具材
JP2966375B2 (ja) 積層セラミックス及びその製造方法
JP3966201B2 (ja) 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP6438352B2 (ja) 加熱装置
JP4529102B2 (ja) 高熱伝導窒化ケイ素質焼結体およびその製造方法
US6316116B1 (en) Ceramic circuit board and method of manufacturing the same
JP4859267B2 (ja) 窒化アルミニウム焼結体とその製造方法
JP2006332068A (ja) セラミックスヒータおよびそれを搭載した半導体あるいは液晶製造装置
JP2002016005A (ja) 半導体製造装置用電極端子接合セラミックス部材及びその製造方法
JP4348659B2 (ja) 高熱伝導窒化ケイ素質焼結体およびそれを用いた基板、半導体素子用回路基板
JP4111013B2 (ja) 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP3035230B2 (ja) 積層セラミックスの製造方法
KR102910097B1 (ko) Y2O3 및 MgO를 소결조제로 포함하는 열전도도가 우수한 질화규소(Si3N4) 세라믹스 제조용 조성물, 질화규소 세라믹스 및 이에 대한 제조방법
CN118324496B (zh) 一种复合绝缘体基板、其制备方法及静电吸盘装置
JP5073894B2 (ja) 窒化珪素製板バネ材、その製造方法及び用途
CN113402281A (zh) 发热体及其制备方法和应用