JP2018510835A - 新規のガラス - Google Patents
新規のガラス Download PDFInfo
- Publication number
- JP2018510835A JP2018510835A JP2017550136A JP2017550136A JP2018510835A JP 2018510835 A JP2018510835 A JP 2018510835A JP 2017550136 A JP2017550136 A JP 2017550136A JP 2017550136 A JP2017550136 A JP 2017550136A JP 2018510835 A JP2018510835 A JP 2018510835A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- less
- tio
- composition
- strain point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 129
- 239000000203 mixture Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000006124 Pilkington process Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000000704 physical effect Effects 0.000 abstract description 4
- 239000005357 flat glass Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000005361 soda-lime glass Substances 0.000 description 10
- 239000005329 float glass Substances 0.000 description 9
- 239000002994 raw material Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 229940072033 potash Drugs 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- 235000015320 potassium carbonate Nutrition 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004031 devitrification Methods 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000006060 molten glass Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- NWXHSRDXUJENGJ-UHFFFAOYSA-N calcium;magnesium;dioxido(oxo)silane Chemical compound [Mg+2].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O NWXHSRDXUJENGJ-UHFFFAOYSA-N 0.000 description 1
- 238000003426 chemical strengthening reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052637 diopside Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
- 以下の酸化物(重量パーセント):
を含む組成を有するガラスであって、570℃超の歪み点を有する、ガラス。 - 以下の酸化物(重量パーセント):
を含む、請求項1に記載のガラス。 - 3〜12%のTiO2、好ましくは、3〜11%のTiO2、より好ましくは、4〜10%のTiO2、最も好ましくは、4〜6%のTiO2を含む、請求項1または請求項2に記載のガラス。
- 580℃超、好ましくは585℃超、より好ましくは、590℃超の歪み点を有する、請求項1〜3のいずれか一項に記載のガラス。
- 1500℃未満、好ましくは、1480℃未満、より好ましくは、1460℃未満の溶融温度(粘度=log2ポアズ)を有する、請求項1〜4のいずれか一項に記載のガラス。
- 1200℃未満、好ましくは、1180℃未満、より好ましくは、1160℃未満、さらにより好ましくは、1140℃未満、なおより好ましくは、1120℃未満、最も好ましくは、1100℃未満の液相線温度を有する、請求項1〜5のいずれか一項に記載のガラス。
- −100℃超、好ましくは、−80℃超、より好ましくは、−60℃超、さらにより好ましくは、−40℃超、なおより好ましくは、−20℃超、最も好ましくは、0℃超の作業温度範囲(液相線温度からTlog4ポアズを引いたものとして定義される)を有する、請求項1〜6のいずれか一項に記載のガラス。
- 70〜90×10−7℃−1(50〜350℃)、好ましくは、74〜86×10−7℃−1(50〜350℃)の熱膨張率を有する、請求項1〜7のいずれか一項に記載のガラス。
- 25℃で2.50〜2.70gcm−3、好ましくは、25℃で2.52〜2.68gcm−3、より好ましくは、25℃で2.54〜2.66gcm−3の密度を有する、請求項1〜8のいずれか一項に記載のガラス。
- 1.50〜1.62、好ましくは、1.52〜1.59、より好ましくは、1.53〜1.58の屈折率を有する、請求項1〜9のいずれか一項に記載のガラス。
- 請求項1〜10のいずれか一項に記載のガラスから形成される、ガラス板。
- 請求項1〜11のいずれか一項に記載のガラスを含む、ガラス基板。
- 請求項12に記載のガラス基板を備える、光起電力電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1505091.7 | 2015-03-26 | ||
GBGB1505091.7A GB201505091D0 (en) | 2015-03-26 | 2015-03-26 | Glass |
PCT/GB2016/050812 WO2016151322A1 (en) | 2015-03-26 | 2016-03-23 | Novel glasses |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018510835A true JP2018510835A (ja) | 2018-04-19 |
JP2018510835A5 JP2018510835A5 (ja) | 2019-04-25 |
Family
ID=53052419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017550136A Pending JP2018510835A (ja) | 2015-03-26 | 2016-03-23 | 新規のガラス |
Country Status (6)
Country | Link |
---|---|
US (1) | US10683231B2 (ja) |
EP (1) | EP3274309B1 (ja) |
JP (1) | JP2018510835A (ja) |
CN (1) | CN107531548A (ja) |
GB (1) | GB201505091D0 (ja) |
WO (1) | WO2016151322A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201505101D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505097D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505096D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
CA3117892A1 (en) | 2018-11-26 | 2020-06-04 | Owens Corning Intellectual Capital, Llc | High performance fiberglass composition with improved elastic modulus |
KR20210096138A (ko) | 2018-11-26 | 2021-08-04 | 오웬스 코닝 인텔렉츄얼 캐피탈 엘엘씨 | 비탄성률이 향상된 고성능 섬유 유리 조성물 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5950045A (ja) * | 1982-09-14 | 1984-03-22 | Asahi Glass Co Ltd | 熱線紫外線吸収ガラス |
JPS61136936A (ja) * | 1984-12-04 | 1986-06-24 | Asahi Glass Co Ltd | ガラス組成物 |
JPS61197444A (ja) * | 1985-02-21 | 1986-09-01 | Asahi Glass Co Ltd | 強化ガラスの製造方法 |
JPS63147843A (ja) * | 1986-12-10 | 1988-06-20 | Nippon Sheet Glass Co Ltd | ガラス組成物 |
WO1998049111A1 (en) * | 1997-04-29 | 1998-11-05 | Pilkington Plc | Glass compositions used in plasma displays |
JP2006312706A (ja) * | 2005-04-08 | 2006-11-16 | Asahi Fiber Glass Co Ltd | 環状ポリオレフィン樹脂組成物及び成形品 |
JP2009057271A (ja) * | 2007-08-03 | 2009-03-19 | Nippon Electric Glass Co Ltd | 強化ガラス基板及びその製造方法 |
JP2012072054A (ja) * | 2010-08-30 | 2012-04-12 | Avanstrate Inc | カバーガラスおよびその製造方法 |
CN102718404A (zh) * | 2012-02-24 | 2012-10-10 | 河南安彩高科股份有限公司 | 一种高应变点硅酸盐玻璃及其应用 |
CN102875022A (zh) * | 2012-10-12 | 2013-01-16 | 湖北三峡新型建材股份有限公司 | 一种低紫外透过率的绿色浮法玻璃 |
WO2014030682A1 (ja) * | 2012-08-24 | 2014-02-27 | 旭硝子株式会社 | 強化ガラス |
Family Cites Families (112)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3753674A (en) | 1970-02-11 | 1973-08-21 | Ppg Industries Inc | Thermal tempering of glass having short strain point-to-softening point interval |
US4792536A (en) | 1987-06-29 | 1988-12-20 | Ppg Industries, Inc. | Transparent infrared absorbing glass and method of making |
US5071796A (en) | 1989-08-14 | 1991-12-10 | Ppg Industries, Inc. | Flat glass composition with improved melting and tempering properties |
JPH05221683A (ja) | 1992-02-12 | 1993-08-31 | Masashi Hayakawa | 放射光透過率を調整した透明板ガラス |
US5830814A (en) | 1992-12-23 | 1998-11-03 | Saint-Gobain Vitrage | Glass compositions for the manufacture of glazings |
US5489558A (en) | 1994-03-14 | 1996-02-06 | Corning Incorporated | Glasses for flat panel display |
FR2727399B1 (fr) | 1994-10-13 | 1997-01-31 | Saint Gobain Vitrage | Compositions de verre silico-sodo-calciques et leurs applications |
US5780371A (en) | 1994-10-13 | 1998-07-14 | Saint-Gobain Vitrage S.A. | Reinforced glass substrate |
US5599754A (en) | 1994-10-14 | 1997-02-04 | Asahi Glass Company Ltd. | Glass composition for a substrate, and substrate for plasma display made thereof |
JPH08133771A (ja) | 1994-11-11 | 1996-05-28 | Nippon Sheet Glass Co Ltd | 液晶表示素子用ガラス基板及びその製造方法 |
JP3666054B2 (ja) | 1995-04-14 | 2005-06-29 | 日本電気硝子株式会社 | 基板用ガラス |
KR0153457B1 (ko) | 1995-06-21 | 1998-11-16 | 백준기 | 유리 조성물 |
JP4183697B2 (ja) | 1995-11-20 | 2008-11-19 | セントラル硝子株式会社 | 表示装置用基板ガラスの製法 |
KR100320628B1 (ko) | 1996-07-10 | 2002-03-08 | 모리 데쯔지 | 기판용유리와이를이용한플라즈마디스플레이장치 |
JPH1025129A (ja) | 1996-07-12 | 1998-01-27 | Nippon Electric Glass Co Ltd | 基板用ガラス |
JP3867816B2 (ja) | 1996-07-12 | 2007-01-17 | 日本電気硝子株式会社 | 基板用ガラス |
JP3867817B2 (ja) | 1996-07-12 | 2007-01-17 | 日本電気硝子株式会社 | 基板用ガラス |
FR2753700B1 (fr) | 1996-09-20 | 1998-10-30 | Feuille de verre destinees a la fabrication de vitrages | |
JPH10152339A (ja) | 1996-09-27 | 1998-06-09 | Nippon Sheet Glass Co Ltd | 耐熱性ガラス組成物 |
JP3040933U (ja) | 1997-02-25 | 1997-09-05 | 株式会社デイトンスタンプ製作所 | スタンプ印面材、及びそれを用いたスタンプキットならびにスタンプ |
DE19710289C1 (de) | 1997-03-13 | 1998-05-14 | Vetrotech Saint Gobain Int Ag | Feuerwiderstandsfähige Verglasung |
EP0914299B1 (fr) | 1997-03-13 | 2002-07-24 | Saint-Gobain Glass France | Compositions de verre silico-sodo-calciques et leurs applications |
DE19721738C1 (de) | 1997-05-24 | 1998-11-05 | Schott Glas | Aluminosilicatglas für flache Anzeigevorrichtungen und Verwendungen |
FR2765569B3 (fr) | 1997-07-01 | 1999-07-16 | Saint Gobain Vitrage | Composition de verre de type silico-sodo-calcique |
JP4193008B2 (ja) | 1997-10-07 | 2008-12-10 | 株式会社ジーエス・ユアサコーポレーション | リチウム二次電池 |
KR20000070211A (ko) | 1997-11-17 | 2000-11-25 | 모리 데쯔지 | 플라즈마 디스플레이용 기판 유리 |
US6313052B1 (en) | 1998-02-27 | 2001-11-06 | Asahi Glass Company Ltd. | Glass for a substrate |
FR2775476B1 (fr) | 1998-03-02 | 2000-04-14 | Saint Gobain Vitrage | Feuille de verre destinee a etre trempee thermiquement |
JPH11322358A (ja) | 1998-05-20 | 1999-11-24 | Nippon Sheet Glass Co Ltd | 耐熱性ガラス組成物 |
JP2000143280A (ja) | 1998-11-09 | 2000-05-23 | Central Glass Co Ltd | ソーダ石灰シリカ系ガラス |
JP2000169180A (ja) | 1998-11-30 | 2000-06-20 | Asahi Glass Co Ltd | ディスプレイ基板用フロートガラス |
JP4158249B2 (ja) | 1998-11-30 | 2008-10-01 | 旭硝子株式会社 | ディスプレイ基板用ガラスをフロート法によって製造する方法 |
JP2000169177A (ja) | 1998-11-30 | 2000-06-20 | Asahi Glass Co Ltd | ディスプレイ基板用フロートガラス |
US6553788B1 (en) | 1999-02-23 | 2003-04-29 | Nippon Sheet Glass Co., Ltd. | Glass substrate for magnetic disk and method for manufacturing |
JP4411692B2 (ja) | 1999-07-12 | 2010-02-10 | 旭硝子株式会社 | ディスプレイ基板用フロートガラスの製造方法 |
US6713180B1 (en) | 1999-09-01 | 2004-03-30 | Pilkington Plc | Improvements in or relating to tempered glazings and glass for use therein |
JP3357652B2 (ja) | 2000-05-25 | 2002-12-16 | 日本板硝子株式会社 | Dna分析用ガラスキャピラリ及びその製造方法 |
JP2002053340A (ja) | 2000-08-09 | 2002-02-19 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
JP2002053341A (ja) | 2000-08-10 | 2002-02-19 | Nippon Electric Glass Co Ltd | 無機elディスプレイガラス基板 |
GB0020471D0 (en) | 2000-08-19 | 2000-10-11 | Pilkington Plc | Glass compositions |
JP2002137935A (ja) | 2000-10-26 | 2002-05-14 | Nippon Electric Glass Co Ltd | 蛍光ランプ用ガラス、蛍光ランプ用ガラス管及び蛍光ランプ |
US6878652B2 (en) | 2001-02-09 | 2005-04-12 | Ppg Industries Ohio, Inc. | Methods of adjusting glass melting and forming temperatures without substantially changing bending and annealing temperatures and glass articles produced thereby |
US6797658B2 (en) | 2001-02-09 | 2004-09-28 | Ppg Industries Ohio, Inc. | Methods of adjusting temperatures of glass characteristics and glass articles produced thereby |
JP2002293547A (ja) | 2001-03-28 | 2002-10-09 | Asahi Glass Co Ltd | 陰極線管用ガラスの製造方法 |
JP2003238174A (ja) | 2002-02-15 | 2003-08-27 | Asahi Glass Co Ltd | フロートガラスの製造方法 |
US7309671B2 (en) | 2002-05-24 | 2007-12-18 | Nippon Sheet Glass Co., Ltd. | Glass composition, glass article, glass substrate for magnetic recording media, and method for producing the same |
US7964298B2 (en) | 2002-10-29 | 2011-06-21 | Hoya Corporation | Glass for chemical strengthening, substrate for information recording media and information recording media |
JPWO2004067462A1 (ja) | 2003-01-29 | 2006-05-18 | 日本板硝子株式会社 | 強化に適したガラス板およびこのガラス板を用いた強化ガラス |
FR2854627B1 (fr) | 2003-05-07 | 2006-05-26 | Saint Gobain | Composition de verre silico-sodo-calcique, notamment pour la realisation de substrats |
KR20060012265A (ko) | 2003-05-30 | 2006-02-07 | 아사히 가라스 가부시키가이샤 | 디스플레이 기판용 유리판 |
US7273668B2 (en) | 2003-06-06 | 2007-09-25 | Hoya Corporation | Glass composition including zirconium, chemically strengthened glass article, glass substrate for magnetic recording media, and method of producing glass sheet |
US7943246B2 (en) * | 2003-07-11 | 2011-05-17 | Pilkington Group Limited | Solar control glazing |
CN1305794C (zh) | 2004-06-25 | 2007-03-21 | 中国洛阳浮法玻璃集团有限责任公司 | 超薄浮法玻璃 |
US20060073081A1 (en) | 2004-10-01 | 2006-04-06 | Asahi Glass Company, Limited | Analytical chip glass substrate and analytical chip |
US7700869B2 (en) | 2005-02-03 | 2010-04-20 | Guardian Industries Corp. | Solar cell low iron patterned glass and method of making same |
JP5000097B2 (ja) | 2005-03-22 | 2012-08-15 | 日本板硝子株式会社 | 赤外線吸収グリーンガラス組成物 |
KR100750990B1 (ko) | 2005-06-22 | 2007-08-22 | 주식회사 케이씨씨 | 기판용 고 변형점 유리 조성물 |
CN101208276B (zh) * | 2005-06-28 | 2012-04-25 | 康宁股份有限公司 | 硼硅铝酸盐玻璃的澄清 |
DE102005033908B3 (de) | 2005-07-15 | 2006-05-18 | Schott Ag | Gefloatetes, in eine Glaskeramik umwandelbares Flachglas und Verfahren zu seiner Herstellung |
US7772144B2 (en) | 2005-08-04 | 2010-08-10 | Guardian Industries Corp. | Glass composition for improved refining and method |
CN100366560C (zh) | 2005-11-25 | 2008-02-06 | 中国洛阳浮法玻璃集团有限责任公司 | 钠钙硅系列防火玻璃 |
US7557053B2 (en) | 2006-03-13 | 2009-07-07 | Guardian Industries Corp. | Low iron high transmission float glass for solar cell applications and method of making same |
US8648252B2 (en) | 2006-03-13 | 2014-02-11 | Guardian Industries Corp. | Solar cell using low iron high transmission glass and corresponding method |
JP5233669B2 (ja) | 2006-06-30 | 2013-07-10 | 旭硝子株式会社 | 液晶表示パネル |
US20080096754A1 (en) | 2006-10-19 | 2008-04-24 | Thomsen Scott V | UV transmissive soda-lime-silica glass |
JP5282572B2 (ja) | 2006-11-10 | 2013-09-04 | 旭硝子株式会社 | フラットパネルディスプレイ用ガラス基板およびその製造方法、ならびにそれを用いたディスプレイパネル |
FR2911335B1 (fr) | 2007-01-12 | 2009-09-04 | Saint Gobain | Composition de verre silico-sodo-calcique pour ecran de visualisation |
CN101239779A (zh) | 2007-02-07 | 2008-08-13 | 河北中亚玻璃有限公司 | 钠钙玻璃配方 |
JP2010100440A (ja) | 2007-02-08 | 2010-05-06 | Nippon Sheet Glass Co Ltd | ソーダ石灰系ガラス組成物 |
BRPI0809363A2 (pt) | 2007-03-28 | 2014-09-02 | Pilkington Group Ltd | Vidro plano no formato de chapa, e vidraça |
JP2008280189A (ja) | 2007-05-08 | 2008-11-20 | Nippon Electric Glass Co Ltd | 太陽電池用ガラス基板およびその製造方法 |
FR2921357B1 (fr) | 2007-09-21 | 2011-01-21 | Saint Gobain | Composition de verre silico-sodo-calcique |
WO2009054419A1 (ja) | 2007-10-25 | 2009-04-30 | Asahi Glass Company, Limited | 基板用ガラス組成物およびその製造方法 |
WO2009131053A1 (ja) | 2008-04-21 | 2009-10-29 | 旭硝子株式会社 | ディスプレイパネル用ガラス板、その製造方法およびtftパネルの製造方法 |
KR20090111680A (ko) | 2008-04-22 | 2009-10-27 | 주식회사 케이씨씨 | 디스플레이 패널용 소다석회규산염 타입 유리 조성물 |
JP5444846B2 (ja) * | 2008-05-30 | 2014-03-19 | 旭硝子株式会社 | ディスプレイ装置用ガラス板 |
US9782949B2 (en) | 2008-05-30 | 2017-10-10 | Corning Incorporated | Glass laminated articles and layered articles |
EP2331472B1 (fr) | 2008-09-01 | 2014-11-05 | Saint-Gobain Glass France | Procede d'obtention de verre |
JP5733811B2 (ja) | 2008-12-19 | 2015-06-10 | 日本電気硝子株式会社 | 太陽電池用ガラス基板の製造方法 |
EP2371775A1 (en) | 2008-12-25 | 2011-10-05 | Asahi Glass Company Limited | Glass substrate and process for producing same |
CN101462825B (zh) | 2008-12-30 | 2011-02-16 | 中国南玻集团股份有限公司 | 超白浮法玻璃 |
KR20100080436A (ko) | 2008-12-31 | 2010-07-08 | 한국유리공업주식회사 | 소다라임 실리카 유리 조성물 및 그 용도 |
US9637408B2 (en) | 2009-05-29 | 2017-05-02 | Corsam Technologies Llc | Fusion formable sodium containing glass |
JP5642363B2 (ja) | 2009-08-14 | 2014-12-17 | 日本板硝子株式会社 | ガラス基板 |
CN102548919B (zh) | 2009-09-25 | 2015-04-29 | 肖特股份有限公司 | 具有高耐热性和低加工温度的铝硅酸盐玻璃 |
JPWO2011049146A1 (ja) | 2009-10-20 | 2013-03-14 | 旭硝子株式会社 | Cu−In−Ga−Se太陽電池用ガラス板およびこれを用いた太陽電池 |
CN102092940A (zh) | 2009-12-11 | 2011-06-15 | 肖特公开股份有限公司 | 用于触摸屏的铝硅酸盐玻璃 |
CN103153892B (zh) | 2010-05-20 | 2016-05-18 | 法国圣戈班玻璃厂 | 用于高温应用的玻璃基材 |
WO2011152414A1 (ja) | 2010-06-03 | 2011-12-08 | 旭硝子株式会社 | ガラス基板およびその製造方法 |
JPWO2011158366A1 (ja) | 2010-06-17 | 2013-08-15 | 旭硝子株式会社 | ガラス基板及びその製造方法 |
KR20130100244A (ko) | 2010-07-26 | 2013-09-10 | 아사히 가라스 가부시키가이샤 | Cu-In-Ga-Se 태양 전지용 유리 기판 및 그것을 사용한 태양 전지 |
WO2012020899A1 (ko) * | 2010-08-10 | 2012-02-16 | 연세대학교 산학협력단 | 반사 방지성 유리 및 그 제조 방법 |
US8492297B2 (en) | 2010-08-25 | 2013-07-23 | Sage Electrochromics, Inc. | Silica soda lime glass composition and use thereof |
WO2012053549A1 (ja) | 2010-10-20 | 2012-04-26 | 旭硝子株式会社 | Cu-In-Ga-Se太陽電池用ガラス基板およびそれを用いた太陽電池 |
KR20140015314A (ko) | 2011-01-28 | 2014-02-06 | 아사히 가라스 가부시키가이샤 | Cu-In-Ga-Se 태양 전지용 유리 기판 및 그것을 사용한 태양 전지 |
US8901021B2 (en) * | 2011-02-14 | 2014-12-02 | Ppg Industries Ohio, Inc. | Dark privacy glass |
FR2972724B1 (fr) | 2011-03-15 | 2016-09-16 | Saint Gobain | Substrat pour cellule photovoltaique |
US9133052B2 (en) | 2011-05-10 | 2015-09-15 | Nippon Electric Glass Co., Ltd. | Glass plate for thin film solar cell |
JPWO2013047246A1 (ja) | 2011-09-30 | 2015-03-26 | 旭硝子株式会社 | CdTe太陽電池用ガラス基板およびそれを用いた太陽電池 |
CN104024171A (zh) | 2011-10-31 | 2014-09-03 | 旭硝子株式会社 | 玻璃基板及其制造方法 |
KR101654753B1 (ko) | 2011-12-28 | 2016-09-08 | 아반스트레이트 가부시키가이샤 | 플랫 패널 디스플레이용 유리 기판 및 그 제조 방법 |
JPWO2013108790A1 (ja) | 2012-01-20 | 2015-05-11 | 旭硝子株式会社 | Cu−In−Ga−Se太陽電池用ガラス基板およびそれを用いた太陽電池 |
KR20140127805A (ko) | 2012-01-25 | 2014-11-04 | 아사히 가라스 가부시키가이샤 | Cu―In―Ga―Se 태양 전지용 유리 기판 및 그것을 사용한 태양 전지 |
JPWO2013118897A1 (ja) | 2012-02-09 | 2015-05-11 | 旭硝子株式会社 | 透明導電膜形成用ガラス基板、および透明導電膜付き基板 |
KR20140142271A (ko) | 2012-03-07 | 2014-12-11 | 아사히 가라스 가부시키가이샤 | Cu-In-Ga-Se 태양 전지용 유리 기판 및 그것을 사용한 태양 전지 |
JPWO2014024850A1 (ja) | 2012-08-06 | 2016-07-25 | 旭硝子株式会社 | Cu−In−Ga−Se太陽電池用ガラス基板およびそれを用いた太陽電池 |
JP6128128B2 (ja) | 2012-09-10 | 2017-05-17 | 旭硝子株式会社 | 太陽電池用ガラス基板およびそれを用いた太陽電池 |
US9701567B2 (en) | 2013-04-29 | 2017-07-11 | Corning Incorporated | Photovoltaic module package |
US9688573B2 (en) | 2013-06-20 | 2017-06-27 | Nippon Sheet Glass Company, Limited | Glass composition, chemically strengthened glass, and glass substrate for information recording medium |
GB201505097D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505096D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505101D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
-
2015
- 2015-03-26 GB GBGB1505091.7A patent/GB201505091D0/en not_active Ceased
-
2016
- 2016-03-23 WO PCT/GB2016/050812 patent/WO2016151322A1/en active Application Filing
- 2016-03-23 CN CN201680023633.1A patent/CN107531548A/zh active Pending
- 2016-03-23 JP JP2017550136A patent/JP2018510835A/ja active Pending
- 2016-03-23 EP EP16712429.6A patent/EP3274309B1/en active Active
- 2016-03-23 US US15/561,261 patent/US10683231B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5950045A (ja) * | 1982-09-14 | 1984-03-22 | Asahi Glass Co Ltd | 熱線紫外線吸収ガラス |
JPS61136936A (ja) * | 1984-12-04 | 1986-06-24 | Asahi Glass Co Ltd | ガラス組成物 |
JPS61197444A (ja) * | 1985-02-21 | 1986-09-01 | Asahi Glass Co Ltd | 強化ガラスの製造方法 |
JPS63147843A (ja) * | 1986-12-10 | 1988-06-20 | Nippon Sheet Glass Co Ltd | ガラス組成物 |
WO1998049111A1 (en) * | 1997-04-29 | 1998-11-05 | Pilkington Plc | Glass compositions used in plasma displays |
JP2006312706A (ja) * | 2005-04-08 | 2006-11-16 | Asahi Fiber Glass Co Ltd | 環状ポリオレフィン樹脂組成物及び成形品 |
JP2009057271A (ja) * | 2007-08-03 | 2009-03-19 | Nippon Electric Glass Co Ltd | 強化ガラス基板及びその製造方法 |
JP2012072054A (ja) * | 2010-08-30 | 2012-04-12 | Avanstrate Inc | カバーガラスおよびその製造方法 |
CN102718404A (zh) * | 2012-02-24 | 2012-10-10 | 河南安彩高科股份有限公司 | 一种高应变点硅酸盐玻璃及其应用 |
WO2014030682A1 (ja) * | 2012-08-24 | 2014-02-27 | 旭硝子株式会社 | 強化ガラス |
CN102875022A (zh) * | 2012-10-12 | 2013-01-16 | 湖北三峡新型建材股份有限公司 | 一种低紫外透过率的绿色浮法玻璃 |
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CN107531548A (zh) | 2018-01-02 |
US20180118607A1 (en) | 2018-05-03 |
EP3274309B1 (en) | 2019-05-08 |
WO2016151322A1 (en) | 2016-09-29 |
GB201505091D0 (en) | 2015-05-06 |
US10683231B2 (en) | 2020-06-16 |
EP3274309A1 (en) | 2018-01-31 |
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