JP2016528152A - アルカリドープおよび無アルカリホウアルミノケイ酸ガラス - Google Patents
アルカリドープおよび無アルカリホウアルミノケイ酸ガラス Download PDFInfo
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- 239000011521 glass Substances 0.000 title claims abstract description 181
- 238000005253 cladding Methods 0.000 claims abstract description 32
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 27
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 20
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 239000000156 glass melt Substances 0.000 claims description 16
- 239000003607 modifier Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000003280 down draw process Methods 0.000 claims description 6
- -1 B 2 O 3 Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000003513 alkali Substances 0.000 abstract description 13
- 239000005340 laminated glass Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000006059 cover glass Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910011255 B2O3 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 10
- 229910052783 alkali metal Inorganic materials 0.000 description 8
- 150000001340 alkali metals Chemical class 0.000 description 8
- 239000000155 melt Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 5
- 238000005342 ion exchange Methods 0.000 description 5
- 239000006060 molten glass Substances 0.000 description 4
- 241000282575 Gorilla Species 0.000 description 3
- 229910018068 Li 2 O Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000006025 fining agent Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000005358 alkali aluminosilicate glass Substances 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910001491 alkali aluminosilicate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000002419 bulk glass Substances 0.000 description 1
- 238000003426 chemical strengthening reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical group O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011090 industrial biotechnology method and process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/02—Forming molten glass coated with coloured layers; Forming molten glass of different compositions or layers; Forming molten glass comprising reinforcements or inserts
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C13/00—Fibre or filament compositions
- C03C13/04—Fibre optics, e.g. core and clad fibre compositions
- C03C13/045—Silica-containing oxide glass compositions
- C03C13/046—Multicomponent glass compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/11—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/11—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen
- C03C3/112—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine
- C03C3/115—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron
- C03C3/118—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron containing aluminium
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/03—3 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
- B32B2315/08—Glass
- B32B2315/085—Glass fiber cloth or fabric
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
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- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Glass Compositions (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Description
Claims (10)
- 約50モル%〜約70モル%のSiO2、約5モル%〜約20モル%のAl2O3、約12モル%〜約35モル%のB2O3、約5モル%までのMgO、約12モル%までのCaO、および約5モル%までのSrOを含むガラスにおいて、アルカリ金属酸化物改質剤の総量が約1モル%以下であることを特徴とするガラス。
- 4モル%≦MgO+CaO+SrO≦Al2O3+1モル%であることを特徴とする、請求項1に記載のガラス。
- 約65GPa未満のヤング率を有することを特徴とする、請求項1または請求項2に記載のガラス。
- 約40×10−7/℃未満の熱膨脹率を有することを特徴とする、請求項1〜3のいずれか一項に記載のガラス。
- 約55モル%〜約70モル%のSiO2、6モル%超〜約10モル%のAl2O3、約18モル%〜約30モル%のB2O3、約3モル%までのMgO、約10モル%までのCaO、約3モル%までのSrOを含むことを特徴とする、請求項1〜4のいずれか一項に記載のガラス。
- 前記ガラスが、ガラス積層体内にクラッド層を形成し、前記ガラス積層体が、前記クラッド層の熱膨脹率より大きい熱膨張率を有するコアガラスを含み、前記クラッド層が、少なくとも約40Mpaの圧縮応力下であることを特徴とする、請求項1〜5のいずれか一項に記載のガラス。
- 少なくとも15Nのヌープスクラッチ限界値を有することを特徴とする、請求項1〜6のいずれか一項に記載のガラス。
- a. SiO2、B2O3、およびAl2O3を含み、アルカリ金属酸化物改質剤を実質的に含有しないガラス溶融体を提供する工程と、
b. 前記ガラス溶融体をダウンドローしてガラスを形成する工程であって、前記ガラスが少なくとも15Nのヌープスクラッチ限界値を有する工程と
を有してなることを特徴とする、ガラスを製造する方法。 - 前記ガラス溶融体がクラッドガラス溶融体であり、前記方法が、
a. コアガラス溶融体を提供する工程と、
b. 前記コアガラス溶融体を溶融延伸してコアガラスを形成する工程と、
c. 前記クラッドガラス溶融体を溶融延伸して、前記コアガラスを囲むクラッド層ガラスを形成する工程と、
をさらに含み、前記コアガラスが、前記クラッドガラスの熱膨脹率より大きい熱膨脹率を有し、前記クラッド層が少なくとも約100MPaの圧縮応力下であることを特徴とする、請求項8に記載の方法。 - 前記ガラスが、約65GPa未満のヤング率を有することを特徴とする、請求項8または請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361866272P | 2013-08-15 | 2013-08-15 | |
US61/866,272 | 2013-08-15 | ||
PCT/US2014/050279 WO2015023525A1 (en) | 2013-08-15 | 2014-08-08 | Alkali-doped and alkali-free boroaluminosilicate glass |
Publications (2)
Publication Number | Publication Date |
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JP2016528152A true JP2016528152A (ja) | 2016-09-15 |
JP2016528152A5 JP2016528152A5 (ja) | 2017-09-14 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016534621A Pending JP2016528152A (ja) | 2013-08-15 | 2014-08-08 | アルカリドープおよび無アルカリホウアルミノケイ酸ガラス |
Country Status (7)
Country | Link |
---|---|
US (4) | US9643884B2 (ja) |
EP (2) | EP3033310B1 (ja) |
JP (1) | JP2016528152A (ja) |
KR (3) | KR20160043026A (ja) |
CN (2) | CN113060935A (ja) |
TW (2) | TWI679184B (ja) |
WO (1) | WO2015023525A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016102045A (ja) * | 2014-04-03 | 2016-06-02 | 日本電気硝子株式会社 | ガラス |
WO2018216637A1 (ja) * | 2017-05-26 | 2018-11-29 | 日本板硝子株式会社 | ガラス組成物、ガラス繊維、ガラスクロス、及びガラス繊維の製造方法 |
WO2019181706A1 (ja) * | 2018-03-20 | 2019-09-26 | Agc株式会社 | 基板、液晶アンテナ及び高周波デバイス |
WO2019181707A1 (ja) * | 2018-03-20 | 2019-09-26 | Agc株式会社 | ガラス基板、液晶アンテナ及び高周波デバイス |
WO2020100834A1 (ja) * | 2018-11-14 | 2020-05-22 | Agc株式会社 | 高周波デバイス用ガラス基板、液晶アンテナ及び高周波デバイス |
WO2022168964A1 (ja) * | 2021-02-05 | 2022-08-11 | 日本板硝子株式会社 | ガラス組成物ならびにガラスフィラーおよびその製造方法 |
KR102714428B1 (ko) * | 2018-03-20 | 2024-10-10 | 에이지씨 가부시키가이샤 | 유리 기판, 액정 안테나 및 고주파 디바이스 |
Families Citing this family (24)
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---|---|---|---|---|
US9346699B2 (en) | 2008-10-06 | 2016-05-24 | Corning Incorporated | Method of making a glass laminate having controlled strength |
WO2015023525A1 (en) | 2013-08-15 | 2015-02-19 | Corning Incorporated | Alkali-doped and alkali-free boroaluminosilicate glass |
WO2015023561A2 (en) | 2013-08-15 | 2015-02-19 | Corning Incorporated | Intermediate to high cte glasses and glass articles comprising the same |
US20150127753A1 (en) * | 2013-11-04 | 2015-05-07 | Meemo, Llc | Word Recognition and Ideograph or In-App Advertising System |
JP6630287B2 (ja) * | 2014-03-27 | 2020-01-15 | コーニング インコーポレイテッド | ガラス物品 |
US10144198B2 (en) | 2014-05-02 | 2018-12-04 | Corning Incorporated | Strengthened glass and compositions therefor |
US10399304B2 (en) | 2014-05-07 | 2019-09-03 | Corning Incorporated | Laminated glass article and method for forming the same |
WO2015179489A1 (en) | 2014-05-21 | 2015-11-26 | Corning Incorporated | Alkali-doped and alkali-free boroaluminosilicate glass |
KR20170015297A (ko) * | 2014-06-04 | 2017-02-08 | 아사히 가라스 가부시키가이샤 | 도광판용 유리판 |
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- 2014-08-08 JP JP2016534621A patent/JP2016528152A/ja active Pending
- 2014-08-08 KR KR1020167006450A patent/KR20160043026A/ko not_active Application Discontinuation
- 2014-08-08 KR KR1020237010685A patent/KR20230049133A/ko not_active Application Discontinuation
- 2014-08-08 KR KR1020217042618A patent/KR20220003632A/ko not_active IP Right Cessation
- 2014-08-08 CN CN201480056637.0A patent/CN105764865A/zh active Pending
- 2014-08-08 US US14/455,332 patent/US9643884B2/en active Active
- 2014-08-15 TW TW108100043A patent/TWI679184B/zh active
- 2014-08-15 TW TW103128129A patent/TWI650298B/zh active
-
2017
- 2017-04-04 US US15/478,571 patent/US10000409B2/en not_active Ceased
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2020
- 2020-06-16 US US16/902,663 patent/USRE49307E1/en active Active
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2022
- 2022-09-28 US US17/954,426 patent/US20230027062A1/en not_active Abandoned
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Cited By (16)
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JP2016102045A (ja) * | 2014-04-03 | 2016-06-02 | 日本電気硝子株式会社 | ガラス |
JPWO2018216637A1 (ja) * | 2017-05-26 | 2019-11-07 | 日本板硝子株式会社 | ガラス組成物、ガラス繊維、ガラスクロス、及びガラス繊維の製造方法 |
WO2018216637A1 (ja) * | 2017-05-26 | 2018-11-29 | 日本板硝子株式会社 | ガラス組成物、ガラス繊維、ガラスクロス、及びガラス繊維の製造方法 |
US11174191B2 (en) | 2017-05-26 | 2021-11-16 | Nippon Sheet Glass Company, Limited | Glass composition, glass fibers, glass cloth, and method for producing glass fibers |
US11594811B2 (en) | 2018-03-20 | 2023-02-28 | AGC Inc. | Glass substrate, liquid crystal antenna and high-frequency device |
JPWO2019181707A1 (ja) * | 2018-03-20 | 2021-03-25 | Agc株式会社 | ガラス基板、液晶アンテナ及び高周波デバイス |
JPWO2019181706A1 (ja) * | 2018-03-20 | 2021-03-25 | Agc株式会社 | 基板、液晶アンテナ及び高周波デバイス |
WO2019181707A1 (ja) * | 2018-03-20 | 2019-09-26 | Agc株式会社 | ガラス基板、液晶アンテナ及び高周波デバイス |
US11239549B2 (en) | 2018-03-20 | 2022-02-01 | AGC Inc. | Glass substrate, liquid crystal antenna and high-frequency device |
WO2019181706A1 (ja) * | 2018-03-20 | 2019-09-26 | Agc株式会社 | 基板、液晶アンテナ及び高周波デバイス |
KR102714428B1 (ko) * | 2018-03-20 | 2024-10-10 | 에이지씨 가부시키가이샤 | 유리 기판, 액정 안테나 및 고주파 디바이스 |
JP7568503B2 (ja) | 2018-03-20 | 2024-10-16 | Agc株式会社 | 基板、液晶アンテナ及び高周波デバイス |
WO2020100834A1 (ja) * | 2018-11-14 | 2020-05-22 | Agc株式会社 | 高周波デバイス用ガラス基板、液晶アンテナ及び高周波デバイス |
JPWO2020100834A1 (ja) * | 2018-11-14 | 2021-09-27 | Agc株式会社 | 高周波デバイス用ガラス基板、液晶アンテナ及び高周波デバイス |
JP7409316B2 (ja) | 2018-11-14 | 2024-01-09 | Agc株式会社 | 高周波デバイス用ガラス基板、液晶アンテナ及び高周波デバイス |
WO2022168964A1 (ja) * | 2021-02-05 | 2022-08-11 | 日本板硝子株式会社 | ガラス組成物ならびにガラスフィラーおよびその製造方法 |
Also Published As
Publication number | Publication date |
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EP3831785A1 (en) | 2021-06-09 |
US20230027062A1 (en) | 2023-01-26 |
TW201920031A (zh) | 2019-06-01 |
TWI679184B (zh) | 2019-12-11 |
US10000409B2 (en) | 2018-06-19 |
USRE49307E1 (en) | 2022-11-22 |
KR20220003632A (ko) | 2022-01-10 |
CN105764865A (zh) | 2016-07-13 |
US20170291845A1 (en) | 2017-10-12 |
TWI650298B (zh) | 2019-02-11 |
KR20160043026A (ko) | 2016-04-20 |
US20150051060A1 (en) | 2015-02-19 |
CN113060935A (zh) | 2021-07-02 |
EP3033310B1 (en) | 2021-03-10 |
EP3033310A1 (en) | 2016-06-22 |
US9643884B2 (en) | 2017-05-09 |
WO2015023525A1 (en) | 2015-02-19 |
TW201512144A (zh) | 2015-04-01 |
KR20230049133A (ko) | 2023-04-12 |
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