JP2016166421A - シリコン含有膜堆積用の前駆体及びその製造及び使用方法 - Google Patents
シリコン含有膜堆積用の前駆体及びその製造及び使用方法 Download PDFInfo
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- JP2016166421A JP2016166421A JP2016078162A JP2016078162A JP2016166421A JP 2016166421 A JP2016166421 A JP 2016166421A JP 2016078162 A JP2016078162 A JP 2016078162A JP 2016078162 A JP2016078162 A JP 2016078162A JP 2016166421 A JP2016166421 A JP 2016166421A
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- Prior art keywords
- silicon
- aminosilane
- precursor
- silane
- carbon atoms
- Prior art date
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- 239000002243 precursor Substances 0.000 title claims abstract description 111
- 238000000151 deposition Methods 0.000 title claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title description 7
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 75
- 125000001424 substituent group Chemical group 0.000 claims abstract description 38
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 26
- 125000003118 aryl group Chemical group 0.000 claims abstract description 24
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 9
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 7
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 125000004432 carbon atom Chemical group C* 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 239000007983 Tris buffer Substances 0.000 claims description 5
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 4
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 4
- FFXRCCZYEXDGRJ-UHFFFAOYSA-N n-bis(propan-2-ylamino)silylpropan-2-amine Chemical compound CC(C)N[SiH](NC(C)C)NC(C)C FFXRCCZYEXDGRJ-UHFFFAOYSA-N 0.000 claims description 4
- UGJHADISJBNSFP-UHFFFAOYSA-N n-bis(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH](NC(C)(C)C)NC(C)(C)C UGJHADISJBNSFP-UHFFFAOYSA-N 0.000 claims description 4
- VCCDZFQACZKDGX-UHFFFAOYSA-N 1,1-dimethylhydrazine ethylsilane Chemical compound C(C)[SiH3].CN(N)C.CN(N)C VCCDZFQACZKDGX-UHFFFAOYSA-N 0.000 claims description 3
- XWJWBHQDHJYSPF-UHFFFAOYSA-N [SiH4].FC1(CNCCC1)F.FC1(CNCCC1)F Chemical compound [SiH4].FC1(CNCCC1)F.FC1(CNCCC1)F XWJWBHQDHJYSPF-UHFFFAOYSA-N 0.000 claims 2
- CLQPEJKJHMMRRW-UHFFFAOYSA-N N-silylpropan-2-amine Chemical compound CC(C)N[SiH3] CLQPEJKJHMMRRW-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 56
- 230000008021 deposition Effects 0.000 description 48
- 229910052581 Si3N4 Inorganic materials 0.000 description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 31
- 238000006243 chemical reaction Methods 0.000 description 30
- 238000000231 atomic layer deposition Methods 0.000 description 15
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 15
- 229910007991 Si-N Inorganic materials 0.000 description 13
- 229910006294 Si—N Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 229910000077 silane Inorganic materials 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 230000004913 activation Effects 0.000 description 11
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 238000006467 substitution reaction Methods 0.000 description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 235000019270 ammonium chloride Nutrition 0.000 description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 125000006575 electron-withdrawing group Chemical group 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- -1 tert-amyl Chemical group 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 238000005891 transamination reaction Methods 0.000 description 4
- UOGQPXQDNUHUIB-UHFFFAOYSA-N 3,3-difluoropiperidine Chemical compound FC1(F)CCCNC1 UOGQPXQDNUHUIB-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000005292 vacuum distillation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IBZKBSXREAQDTO-UHFFFAOYSA-N 2-methoxy-n-(2-methoxyethyl)ethanamine Chemical compound COCCNCCOC IBZKBSXREAQDTO-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- YDINTEWCNCMMOB-UHFFFAOYSA-N COCC[SiH](N)CCOC Chemical compound COCC[SiH](N)CCOC YDINTEWCNCMMOB-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- RHFOKXJTIRMAAD-UHFFFAOYSA-N N-[bis(2-methoxyethyl)amino]silyl-2-methoxy-N-(2-methoxyethyl)ethanamine Chemical compound COCCN(CCOC)[SiH2]N(CCOC)CCOC RHFOKXJTIRMAAD-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 238000005576 amination reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- APOYTRAZFJURPB-UHFFFAOYSA-N 2-methoxy-n-(2-methoxyethyl)-n-(trifluoro-$l^{4}-sulfanyl)ethanamine Chemical compound COCCN(S(F)(F)F)CCOC APOYTRAZFJURPB-UHFFFAOYSA-N 0.000 description 1
- VJIFBECQKOBRHM-UHFFFAOYSA-N 2-silylethanamine Chemical compound NCC[SiH3] VJIFBECQKOBRHM-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UQRONKZLYKUEMO-UHFFFAOYSA-N 4-methyl-1-(2,4,6-trimethylphenyl)pent-4-en-2-one Chemical group CC(=C)CC(=O)Cc1c(C)cc(C)cc1C UQRONKZLYKUEMO-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000003775 Density Functional Theory Methods 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ZZHXBZOWQPNBCA-UHFFFAOYSA-N N-(propan-2-ylamino)silylpropan-2-amine Chemical compound CC(C)N[SiH2]NC(C)C ZZHXBZOWQPNBCA-UHFFFAOYSA-N 0.000 description 1
- MTRDDAMZXLHELN-UHFFFAOYSA-N N-silylbutan-2-amine Chemical compound C(C)(CC)N[SiH3] MTRDDAMZXLHELN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- LNENVNGQOUBOIX-UHFFFAOYSA-N azidosilane Chemical compound [SiH3]N=[N+]=[N-] LNENVNGQOUBOIX-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- IEONKIAJFHMGAD-UHFFFAOYSA-N bis(3,3-difluoropiperidin-1-yl)silane Chemical compound C1C(F)(F)CCCN1[SiH2]N1CC(F)(F)CCC1 IEONKIAJFHMGAD-UHFFFAOYSA-N 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- VPZDAHBNTYZYHC-UHFFFAOYSA-N chlorosilylamine Chemical compound N[SiH2]Cl VPZDAHBNTYZYHC-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- JTGAUXSVQKWNHO-UHFFFAOYSA-N ditert-butylsilicon Chemical compound CC(C)(C)[Si]C(C)(C)C JTGAUXSVQKWNHO-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- SBVCEDLIWDSBGE-UHFFFAOYSA-N iminosilane Chemical compound [SiH2]=N SBVCEDLIWDSBGE-UHFFFAOYSA-N 0.000 description 1
- 239000003701 inert diluent Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- TWVSWDVJBJKDAA-UHFFFAOYSA-N n-[bis(dimethylamino)silyl]-n-methylmethanamine Chemical compound CN(C)[SiH](N(C)C)N(C)C TWVSWDVJBJKDAA-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
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Abstract
【解決手段】シリコン含有膜を堆積させるための次式(I):
(R1R2N)nSiR3 4−n (I)
(式中、置換基R1およびR2はそれぞれ独立にC1〜20のアルキル基およびC6〜30のアリール基から選択され、置換基R1およびR2の少なくとも1つはF、Cl、Br、I、CN、NO2、PO(OR)2、OR、RCOO、SO、SO2、SO2Rから選択される電子吸引性置換基を含み、そしてR3はH、C1〜20のアルキル基、又はC6〜12のアリール基から選択され、そしてnは1〜4の範囲の数である。)から成るアミノシラン前駆体。
【選択図】なし
Description
(R1R2N)nSiR3 4−n (I)
(式中、置換基R1およびR2はそれぞれ独立に1〜20個の炭素原子を含むアルキル基および6〜30個の炭素原子を含むアリール基から選択され、置換基R1およびR2の少なくとも1つはF、Cl、Br、I、CN、NO2、PO(OR)2、OR、RCOO、SO、SO2、SO2Rから選択される少なくとも1つの電子吸引性置換基を含みそして少なくとも1つの電子吸引性置換基におけるRはアルキル基又はアリール基から選択され、R3は水素原子、1〜20個の炭素原子を含むアルキル基、又は6〜12個の炭素原子を含むアリール基から選択され、そしてnは1〜4の範囲の数である。)から成るアミノシラン前駆体が提供される。
処理室内に基材を提供すること、そして
処理室にアミノシラン前駆体を、それを反応させそして基材上にシリコン含有膜を堆積させるのに十分な温度および圧力で導入すること、
を含み、その際にアミノシラン前駆体が次式(I):
(R1R2N)nSiR3 4−n (I)
(式中、置換基R1およびR2はそれぞれ独立に1〜20個の炭素原子を含むアルキル基および6〜30個の炭素原子を含むアリール基から選択され、置換基R1およびR2の少なくとも1つはF、Cl、Br、I、CN、NO2、PO(OR)2、OR、RCOO、SO、SO2、SO2Rから選択される少なくとも1つの電子吸引性置換基を含みそして少なくとも1つの電子吸引性置換基におけるRはアルキル基又はアリール基から選択され、R3は水素原子、1〜20個の炭素原子を含むアルキル基、又は6〜12個の炭素原子を含むアリール基から選択され、そしてnは1〜4の範囲の数である。)により表される方法が提供される。
AnSiR4 4−n (II)
(式中、Aは次の(a)〜(j)のアミノ基群から選択される少なくとも1つの基で、R4は1〜20個の炭素原子を含むアルキル基又は6〜12個の炭素原子を含むアリール基から選択され、nは1〜4の範囲の数である。)から成るアミノシラン前駆体が提供される。
(R1R2N)nSiR3 4−n (I)
式(I)において、置換基R1およびR2はそれぞれ独立に1〜20個の炭素原子を含むアルキル基および6〜30個の炭素原子を含むアリール基から選択され、置換基R1およびR2の少なくとも1つはF、Cl、Br、I、CN、NO2、PO(OR)2、OR、RCOO、SO、SO2、SO2Rから選択される少なくとも1つの電子吸引性基を含み、そして少なくとも1つの電子吸引性置換基中のRはアルキル基又はアリール基から選択され、R3はH原子、1〜20個の炭素原子を含むアルキル基、又は6〜12個の炭素原子を含むアリール基から選択され、そしてnは1〜4の範囲の数である。本明細書で用いられるとき、用語“アルキル基”とは1〜20個、又は1〜12個、又は1〜6個の炭素原子を有する置換又は非置換のアルキル基を言いそして直鎖、分岐又は環状の基を含み得る。適したアルキル基の例として、限定されないが、メチル、エチル、イソプロピル、sec−ブチル、tert−ブチル、tert−アミル、n−ペンチル、n−ヘキシル、シクロプロピル、シクロペンチル、およびシクロヘキシルが挙げられる。本明細書で用いられるとき、用語“アリール”基とは6〜30個又は6〜12個又は6〜10個の炭素原子を有する置換又は非置換のアリール基を言う。アリール基の例として、限定されないが、フェニル、ベンジル、トリル、メシチル、およびキシリルが挙げられる。
AnSiR4 4−n (II)
として示される。式(II)において、Aは次のアミノ基(a)〜(j)から選択され、R4は1〜20個の炭素原子を含むアルキル基又は6〜12個の炭素原子を含むアリール基から選択され、nは1〜4の範囲の数である。アミノ基(a)〜(j)は示されるようにSi原子に結合されている。
(R1R2N)nSiR3 4−n+NH3→
(R1R2N)n−1Si(NH2)R3 4−n+R1R2NH (1)
に従ってSi−N結合の相対的強弱度を定量化するために用いられるSi−N形成エネルギーがここに規定される。
上記式(1)において、R1およびR2は一般に用いられる当業界で周知の前駆体の置換基であり、アミノシラン、β−アミノエチルシラン、環状シラザン、イミノシラン、ビシクロシラザン、ヒドロジノシラン、擬似ハロシラン、およびヘテロ環状置換シランであり得る。Si−N形成エネルギーはカリフォルニア州、サンジェゴのAccelyrs社により提供の表題がDMol3の、マテリアルスタジオv.4.2.0.2の化学モデリングソフトウエアープログラムで式(I)を用いて計算した。式(I)を適用しそして前記モデリングソフトウエアーを用いて形成エネルギーを決めると、強いSi−N結合はより高い反応エネルギーそしてそれ故により高い堆積温度(550℃より高い)をもたらすであろう。低い処理温度(例えば、550℃以下)で堆積させるアミノシラン前駆体を開発するためには、Si−N結合の近傍に電子吸引性基を導入してSi−N結合から電子密度を除去することによりSi−N結合を弱めることを望んでもよい。
△E=−[E((R1R2N)n−1Si(NH2)R3 4−n)+
E(R1R2NH)−E(NH3)−E(R1R2N)nSiR3 4−n](2)式(2)において、△E値が小さければ小さいほど、Si−N結合は弱くそしてそれ故により低い堆積温度が達成され得る。
R1R2NH+ClSiH3→R1R2N−SiH3+R1R2NH−HCl(A)
4R1R2NH+H2SiCl2→R1R2N−SiH2−NR1R2
+2R1R2NH−HCl(B)
6R1R2NH+HSiCl3→(R1R2N)3SiH
+3R1R2NH−HCl(C)
ビス(tert−ブチルアミノ)シランBTBASのt−ブチル基におけるメチル基の1つを以下の化学構造7に示すように−CF3基で逐次的に置換した。
BTBASのt−ブチル基におけるメチル基を−CN基で逐次的に置換した。BTBASに対してのおよび−CN基で置換された1、2又は3個のメチル基を有する式(1)のアミノシラン前駆体に対しての反応エネルギーが前記式(2)およびカリフォルニア州サンジェゴのAccelyrs社により提供の表題がDMol3、マテリアルスタジオv.4.2.0.2の化学モデリングソフトウエアープログラムを用いて決定された。結果を図5に示す。置換は、当初は分子内の水素結合の形成に起因して反応エネルギーの増加をもたらす。しかしながら、全部の置換では、反応エネルギーはBTBASに対するよりも約1.6kcal/molほど低い。それ故、Si−N結合の開裂はBTBAS内におけるよりも低い温度で起ると予想される。
少なくとも1種の電子吸引性置換基又はフッ素を含むアルキル基又はアリール基を有する一連のアミノシラン前駆体が、フッ素を含有しないかそれよりも水素を含有する類似のアミノシラン前駆体と比較された。表1に記載した分子に対してHのFによる置換を調べるために計算が行われ、また、表1には、本明細書に記載の式(2)およびカリフォルニア州サンジェゴのAccelyrs社により提供の表題がDMol3、マテリアルスタジオv.4.2.0.2の化学モデリングソフトウエアープログラムを用いて計算した反応熱が示されている。比較の結果を以下の表1に示す。
磁気攪拌棒、N2パージバルブおよびゴム隔膜を備えた240mLのテフロン(登録商標)反応器にCH2Cl2(50mL)中のN−t−ブチル−3−ピペリドン(25g、0.1255mol)溶液を入れそして0℃に冷却した。この溶液に、ビス(2−メトキシエチル)アミノ硫黄トリフルオリド(41.58g、0.1882mol)を加えた。次いで、この混合物を室温とし、16時間にわたって撹拌した。次いで、混合物を250mLのガラスフラスコに注ぎ込みそして1℃の氷水25mLで処理した。有機相を分液ロートで分離した。有機溶液を15%NaOH水を用いてアルカリ性とし次いで乾燥(MgSO4)し、ろ過しそして真空で蒸発させた。残部を磁気攪拌棒および窒素注入管を備えた250mLの丸底フラスコ内で3MのHClと混合しそして60℃で90分間加熱した。混合物を15%NaOH水で中和し、ジエチルエーテル中に抽出し、水性相から分離し、乾燥(MgSO4)し、ろ過し次いで真空で蒸発させた。3,3−ジフルオロピペリジンの純生成物が40℃(0.1トール)での蒸留によって得られそしてG.C.M.S.マススペクトルで分析した。
0.1モルの3,3−ジフルオロピペリジンおよび0.1モルのビス(t−ブチルアミノ)シランの量を窒素で保護してフラスコ内で混合しそして攪拌した。毎4時間毎に、混合物はポンプで30分間100トールの真空にした。48時間後、最終の生成物ビス(3,3−ジフルオロピペリジノ)シランが118℃/10トールでの真空蒸留で得られた。
0.1モルのビス(2−メトキシエチル)アミンおよび0.1モルのビス(t−ブチルアミノ)シランの量を窒素で保護してフラスコ内で混合しそして攪拌した。毎4時間毎に、混合物はポンプで30分間100トールの真空にした。48時間後、生成物ビス[ビス(2−メトキシエチル)アミノ]シランが54℃/10トールでの真空蒸留で得られた。
0.1モルのビス(2−メトキシエチル)アミンおよび0.1モルのジエチルアミノシランの量を窒素で保護してフラスコ内で混合しそして攪拌した。毎4時間毎に、混合物はポンプで30分間100トールの真空にした。48時間後、生成物ビス[ビス(2−メトキシエチル)アミノ]シランが40℃/10トールでの真空蒸留で得られた。
Claims (16)
- 次式(I):
(R1R2N)nSiR3 4−n (I)
(式中、置換基R1およびR2はそれぞれ独立に1〜20個の炭素原子を含むアルキル基および6〜30個の炭素原子を含むアリール基から選択され、
置換基R1およびR2の少なくとも1つはF、Cl、Br、I、CN、NO2、PO(OR)2、OR、RCOO、SO、SO2、SO2Rから選択される少なくとも1つの電子吸引性置換基を含みそして少なくとも1つの電子吸引性置換基におけるRはアルキル基又はアリール基から選択され、
R3はH、1〜20個の炭素原子を含むアルキル基、又は6〜12個の炭素原子を含むアリール基から選択され、そして
nは1〜4の範囲の数である。)
から成るシリコン含有膜を堆積させるためのアミノシラン前駆体。 - R1およびR2が結合して環構造を形成している請求項1に記載のアミノシラン前駆体。
- 前記前駆体が、トリス(1,1−ジメチルヒドラジノ)−tert−ブチルシラン、ビス(1,1−ジメチルヒドラジン)エチルシラン、ビス(1,1−ジメチルヒドラジノ)メチルシラン、ビス(ジエチルアミノ)シラン、トリス(イソプロピルアミノ)シラン、トリス(tert−ブチルアミノ)シランおよびビス(3,3−ジフルオロピペリジン)シランから選択される請求項1に記載のアミノシラン前駆体。
- トリス(1,1−ジメチルヒドラジノ)−tert−ブチルシランを含む請求項3に記載のアミノシラン前駆体。
- ビス(1,1−ジメチルヒドラジン)エチルシランを含む請求項3に記載のアミノシラン前駆体。
- ビス(1,1−ジメチルヒドラジノ)メチルシランを含む請求項3に記載のアミノシラン前駆体。
- ビス(ジエチルアミノ)シランを含む請求項3に記載のアミノシラン前駆体。
- トリス(イソ−プロピルアミノ)シランを含む請求項3に記載のアミノシラン前駆体。
- トリス(tert−ブチルアミノ)シランを含む請求項3に記載のアミノシラン前駆体。
- ビス(3,3−ジフルオロピペリジン)シランを含む請求項3に記載のアミノシラン前駆体。
- 化学蒸着によって基材にシリコン含有膜を堆積させるための方法であって、下記の工程:
処理室内に基材を提供すること、
アミノシラン前駆体を、反応させそして基材にシリコン含有膜を堆積させるのに十分な温度および圧力で処理室に導入すること、
を含み、その際にアミノシラン前駆体が次式(I):
(R1R2N)nSiR3 4−n (I)
(式中、置換基R1およびR2はそれぞれ独立に1〜20個の炭素原子を含むアルキル基および6〜30個の炭素原子を含むアリール基から選択され、
置換基R1およびR2の少なくとも1つはF、Cl、Br、I、CN、NO2、PO(OR)2、OR、RCOO、SO、SO2、SO2Rから選択される少なくとも1つの電子吸引性置換基を含みそして少なくとも1つの電子吸引性置換基におけるRはアルキル基又はアリール基から選択され、
R3はH、1〜20個の炭素原子を含むアルキル基、又は6〜12個の炭素原子を含むアリール基から選択され、そして
nは1〜4の範囲の数である。)
を有する、方法。 - 前記導入工程が、アンモニア、窒素およびヒドラジンから選択される窒素源をさらに含む請求項11に記載の方法。
- 前記窒素源が、アンモニア又は窒素であり且つ窒素源が窒素源:前駆体が0.1〜4:1の範囲で存在している請求項12に記載の方法。
- 前記温度が、約400℃〜約700℃の範囲である請求項11に記載の方法。
- 前記圧力が、約20mトール〜約20トールの範囲である請求項11に記載の方法。
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US12/190,125 | 2008-08-12 |
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JP2014177471A (ja) | 2014-09-25 |
KR20100020440A (ko) | 2010-02-22 |
EP2154141A2 (en) | 2010-02-17 |
JP2017210485A (ja) | 2017-11-30 |
US20100041243A1 (en) | 2010-02-18 |
EP2644609B1 (en) | 2015-07-08 |
US8129555B2 (en) | 2012-03-06 |
EP2644609A2 (en) | 2013-10-02 |
EP2154141A3 (en) | 2011-05-25 |
EP2644609A3 (en) | 2013-11-06 |
TWI374887B (en) | 2012-10-21 |
JP6290961B2 (ja) | 2018-03-07 |
EP2154141B1 (en) | 2016-06-15 |
KR20120052214A (ko) | 2012-05-23 |
TW201006842A (en) | 2010-02-16 |
CN101648964A (zh) | 2010-02-17 |
JP2010043081A (ja) | 2010-02-25 |
JP5587572B2 (ja) | 2014-09-10 |
KR101470067B1 (ko) | 2014-12-10 |
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