JP2015506583A - 窒化チタンを選択的にエッチングするための組成物および方法 - Google Patents
窒化チタンを選択的にエッチングするための組成物および方法 Download PDFInfo
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- JP2015506583A JP2015506583A JP2014550456A JP2014550456A JP2015506583A JP 2015506583 A JP2015506583 A JP 2015506583A JP 2014550456 A JP2014550456 A JP 2014550456A JP 2014550456 A JP2014550456 A JP 2014550456A JP 2015506583 A JP2015506583 A JP 2015506583A
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- Prior art keywords
- acid
- ammonium
- composition
- chloride
- bromide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 229
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims description 33
- 238000005530 etching Methods 0.000 title claims description 28
- 239000000463 material Substances 0.000 claims abstract description 90
- 239000007800 oxidant agent Substances 0.000 claims abstract description 74
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 70
- 238000004377 microelectronic Methods 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 45
- 230000001590 oxidative effect Effects 0.000 claims abstract description 45
- 239000003112 inhibitor Substances 0.000 claims abstract description 43
- 238000005260 corrosion Methods 0.000 claims abstract description 42
- 230000007797 corrosion Effects 0.000 claims abstract description 42
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 57
- -1 hexafluorosilicic acid Chemical compound 0.000 claims description 53
- 239000002904 solvent Substances 0.000 claims description 35
- 229910052740 iodine Inorganic materials 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 18
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 17
- 239000011630 iodine Substances 0.000 claims description 17
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 claims description 16
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 239000002516 radical scavenger Substances 0.000 claims description 15
- 150000003839 salts Chemical group 0.000 claims description 15
- 239000003381 stabilizer Substances 0.000 claims description 14
- 239000004094 surface-active agent Substances 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 13
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 13
- 239000012964 benzotriazole Substances 0.000 claims description 13
- 150000007942 carboxylates Chemical class 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 239000002210 silicon-based material Substances 0.000 claims description 13
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 11
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 claims description 10
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 10
- 229940005561 1,4-benzoquinone Drugs 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 8
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 claims description 7
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 7
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 6
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 6
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 6
- GDGIVSREGUOIJZ-UHFFFAOYSA-N 5-amino-3h-1,3,4-thiadiazole-2-thione Chemical group NC1=NN=C(S)S1 GDGIVSREGUOIJZ-UHFFFAOYSA-N 0.000 claims description 6
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 6
- 229910020366 ClO 4 Inorganic materials 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- CWRVKFFCRWGWCS-UHFFFAOYSA-N Pentrazole Chemical compound C1CCCCC2=NN=NN21 CWRVKFFCRWGWCS-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- OIRDTQYFTABQOQ-KQYNXXCUSA-N adenosine Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](CO)[C@@H](O)[C@H]1O OIRDTQYFTABQOQ-KQYNXXCUSA-N 0.000 claims description 6
- HIMXGTXNXJYFGB-UHFFFAOYSA-N alloxan Chemical compound O=C1NC(=O)C(=O)C(=O)N1 HIMXGTXNXJYFGB-UHFFFAOYSA-N 0.000 claims description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 claims description 6
- UREZNYTWGJKWBI-UHFFFAOYSA-M benzethonium chloride Chemical compound [Cl-].C1=CC(C(C)(C)CC(C)(C)C)=CC=C1OCCOCC[N+](C)(C)CC1=CC=CC=C1 UREZNYTWGJKWBI-UHFFFAOYSA-M 0.000 claims description 6
- JBIROUFYLSSYDX-UHFFFAOYSA-M benzododecinium chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 JBIROUFYLSSYDX-UHFFFAOYSA-M 0.000 claims description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 6
- YMKDRGPMQRFJGP-UHFFFAOYSA-M cetylpyridinium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 YMKDRGPMQRFJGP-UHFFFAOYSA-M 0.000 claims description 6
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 claims description 6
- 229960005152 pentetrazol Drugs 0.000 claims description 6
- 229920001451 polypropylene glycol Polymers 0.000 claims description 6
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 6
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 5
- HHDRWGJJZGJSGZ-UHFFFAOYSA-N 5-benzyl-2h-tetrazole Chemical compound C=1C=CC=CC=1CC=1N=NNN=1 HHDRWGJJZGJSGZ-UHFFFAOYSA-N 0.000 claims description 5
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 5
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 5
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 5
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 5
- 125000002091 cationic group Chemical group 0.000 claims description 5
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 4
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 claims description 4
- RHLVCLIPMVJYKS-UHFFFAOYSA-N 3-octanone Chemical compound CCCCCC(=O)CC RHLVCLIPMVJYKS-UHFFFAOYSA-N 0.000 claims description 4
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- CXRFDZFCGOPDTD-UHFFFAOYSA-M Cetrimide Chemical compound [Br-].CCCCCCCCCCCCCC[N+](C)(C)C CXRFDZFCGOPDTD-UHFFFAOYSA-M 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- LINDOXZENKYESA-UHFFFAOYSA-N TMG Natural products CNC(N)=NC LINDOXZENKYESA-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- 239000003082 abrasive agent Substances 0.000 claims description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 150000001450 anions Chemical class 0.000 claims description 4
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 claims description 4
- 229960000686 benzalkonium chloride Drugs 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 claims description 4
- FKPSBYZGRQJIMO-UHFFFAOYSA-M benzyl(triethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC1=CC=CC=C1 FKPSBYZGRQJIMO-UHFFFAOYSA-M 0.000 claims description 4
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- MZMRZONIDDFOGF-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.CCCCCCCCCCCCCCCC[N+](C)(C)C MZMRZONIDDFOGF-UHFFFAOYSA-M 0.000 claims description 4
- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 claims description 4
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001507 metal halide Inorganic materials 0.000 claims description 4
- 150000005309 metal halides Chemical class 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 4
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 claims description 4
- 229940124530 sulfonamide Drugs 0.000 claims description 4
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 4
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 4
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 4
- APSPVJKFJYTCTN-UHFFFAOYSA-N tetramethylazanium;silicate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.[O-][Si]([O-])([O-])[O-] APSPVJKFJYTCTN-UHFFFAOYSA-N 0.000 claims description 4
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 4
- WAKHLWOJMHVUJC-FYWRMAATSA-N (2e)-2-hydroxyimino-1,2-diphenylethanol Chemical compound C=1C=CC=CC=1C(=N/O)\C(O)C1=CC=CC=C1 WAKHLWOJMHVUJC-FYWRMAATSA-N 0.000 claims description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 3
- NHAZGSRLKBTDBF-UHFFFAOYSA-N 1,2,4-triazol-1-amine Chemical compound NN1C=NC=N1 NHAZGSRLKBTDBF-UHFFFAOYSA-N 0.000 claims description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 claims description 3
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 3
- AIACLXROWHONEE-UHFFFAOYSA-N 2,3-dimethylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=C(C)C(=O)C=CC1=O AIACLXROWHONEE-UHFFFAOYSA-N 0.000 claims description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- PCFUWBOSXMKGIP-UHFFFAOYSA-N 2-benzylpyridine Chemical compound C=1C=CC=NC=1CC1=CC=CC=C1 PCFUWBOSXMKGIP-UHFFFAOYSA-N 0.000 claims description 3
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 claims description 3
- DVGVMQVOCJNXNJ-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;4-methylbenzenesulfonate Chemical compound C[N+](C)(C)CCO.CC1=CC=C(S([O-])(=O)=O)C=C1 DVGVMQVOCJNXNJ-UHFFFAOYSA-M 0.000 claims description 3
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 claims description 3
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 claims description 3
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 claims description 3
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- C11D2111/22—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Abstract
Description
本発明は、金属導体および絶縁体材料(すなわち、低誘電率誘電体)の存在下で、窒化チタンおよび/またはフォトレジストエッチング残渣を選択的にエッチングするための組成物および方法、特に、銅、タングステンおよび低誘電率誘電体材料の曝露された層もしくは下の層のものよりも高いエッチング速度および選択性で、窒化チタンおよび/またはフォトレジストエッチング残渣を効果的かつ効率的にエッチングするための組成物および方法に関する。
フォトレジストマスクは、半導体または誘電体などの材料をパターン化するために、半導体産業で一般に使用される。1つの応用において、フォトレジストマスクは、マイクロエレクトロニクスデバイスのバックエンド金属化において相互接続を形成するためのデュアルダマシンプロセスに使用される。デュアルダマシンプロセスには、銅の層などの金属導体層上に配置される低誘電率誘電層上にフォトレジストマスクを形成する工程が関与する。次いで、低誘電率誘電層は、フォトレジストマスクによってエッチングされて、金属導体層を曝露させるビアおよび/またはトレンチを形成する。一般にデュアルダマシン構造として知られているビアおよびトレンチは、通常、2つのリソグラフィー工程を使用して画定される。次いで、フォトレジストマスクは低誘電率誘電層から除去され、その後、伝導性の材料はビアおよび/またはトレンチに堆積して、相互接続を形成する。
本発明は、存在する金属導体層および低誘電率誘電層と比較して、ハードマスク層および/またはフォトレジストエッチング残渣を選択的にエッチングするための組成物および方法に関する。特に、本発明は、銅、タングステンおよび低誘電率誘電層と比較して、窒化チタンおよび/またはフォトレジストエッチング残渣を選択的にエッチングするための組成物および方法に関する。
一般に、本発明は、存在する金属導体層および低誘電率誘電層と比較して、ハードマスク層および/またはフォトレジストエッチング残渣を選択的にエッチングするための組成物および方法に関する。特に、本発明は、銅、タングステンおよび低誘電率誘電層と比較して、窒化チタンおよび/またはフォトレジストエッチング残渣を選択的にエッチングするための組成物および方法に関する。マイクロエレクトロニクスデバイス上で存在し得る他の材料は、前記組成物によって実質的に除去されてはならないか、または侵食されてはならない。
第2の態様による3種の組成物を、下記表1の通りに調製した。TiN(タイプ1)、TiN(タイプ2)、銅、酸化窒化ケイ素および超低誘電率誘電体のクーポンを、50℃および時間に対する厚さ損失の勾配に基づき決定されたそれぞれのエッチング速度で、各調合物中に浸漬した。表1から、金属(例えば銅)および誘電体材料と比較してTiNの選択性は、少なくとも約200:1〜約500:1であることがわかった。加えて、カルボン酸塩を含む組成物Cのエッチング速度は、驚くべきことに、酸化剤の濃度が組成物AおよびBの40%未満であるとしても、カルボン酸塩を含まないものより高い。これは、銅などの金属導体への攻撃の最小化のため、有利である。
第1の態様による7種の組成物(すなわち、実質的に過酸化水素を含まない)を、下記表2の通りに調製した。TiN(タイプ1)、銅、PETEOS誘電体およびタングステンのクーポンを、50℃または60℃で各調合物中に浸漬し、エッチング速度は所与の時間間隔における損失から推定された。表2から、CuおよびWならびに誘電体材料と比較してTiNの選択性は、多くの場合、>50:1、いくつかの場合、>100:1であることがわかった。調合物Jに注目すると、実際の組成物は、0.1%のHFおよび0.1%のホウ酸を有し、これは数分で、0.11%のHBF4および0.023%のホウ酸(記載される)に変換されることが予想されるが、存在する種は、最終的には平衡に、主にHBF3OH+HBF4となってもよい。
3種の組成物を、表3に示すように調製した。
以下の置換基を有する10種の濃縮調合物を、本明細書に記載される第2の態様に従って調製した。それぞれ、0.01重量%のCDTAおよび1.000重量%の5−メチルBTA、ならびに以下の表5に記載されるエッチング液を含んだ。
調合物を、下記の表に示すように第1の態様に従って調製し、それによって、量は、調合物の全重量に基づき、重量パーセントで提供される。調合物の残量は、脱イオン水であった。TiN、Cu、WおよびLTO(低温酸化物)のクーポンを、50℃でそれぞれ希釈された調合物に浸漬し、そしてそのエッチング速度を測定した。特に、TiNエッチング速度は、異なるスズバッチ、したがって、異なるフィルム特性のために比較できなかった。結果は下記の表7にまとめた。
調合物を、下記の表で示すように第1の態様に従って調製し、それによって、量は、調合物の全重量に基づき、重量パーセントで提供される。調合物の残量は、脱イオン水であった。TiN、Cu、WおよびPETEOSのクーポンを、50℃でそれぞれ希釈された調合物に浸漬し、そしてそのエッチング速度を測定した。結果は下記の表8にまとめた。
調合物を、下記の表で示すように第1の態様に従って調製し、それによって、量は、調合物の全重量に基づき、重量パーセントで提供される。調合物の残量は、脱イオン水であった。TiN、Cu、W、TEOSおよびLTO(低温酸化物)のクーポンを、50℃でそれぞれ調合物に浸漬し、そして表9に示すように、そのエッチング速度を測定した。
0.01重量%のヨウ素酸アンモニウム、0.8重量%のヘキサフルオロケイ酸、0.2重量%のTEOS、0.04重量%の5−ベンジルテトラゾール、表10に開示される腐食抑制剤および残量の水を含む、第1の態様の調合物を調製した。それぞれのpHは1〜3の範囲にあった。エッチング速度測定は、商業的に入手可能なTiNおよびWクーポンを、それぞれの調合物に50℃で一定時間浸漬し、そしてTiNおよびW損失を分析することによって実行した。この結果も表10に示す。
Claims (40)
- 窒化チタンおよび/またはフォトレジストエッチング残渣材料をその上に有するマイクロエレクトロニクスデバイスの表面から窒化チタンおよび/またはフォトレジストエッチング残渣材料を選択的に除去するための組成物であって、少なくとも1種の酸化剤、少なくとも1種のエッチング液および少なくとも1種の溶媒を含み、過酸化水素を実質的に含まない組成物。
- 前記エッチング液が、H2ZrF6、H2TiF6、HPF6、HF、アンモニウムフルオリド、テトラフルオロホウ酸、ヘキサフルオロケイ酸、テトラブチルアンモニウムテトラフルオロボレート(TBA−BF4)、アンモニウムヘキサフルオロシリケート、アンモニウムヘキサフルオロチタネート、テトラアルキルアンモニウムフルオリド(NR1R2R3R4F)、テトラアルキルアンモニウムヒドロキシド(NR1R2R3R4OH)(式中、R1、R2、R3、R4は同一であっても、または互いに異なってもよく、かつ直鎖もしくは分枝鎖C1〜C6アルキル基からなる群から選択される)、弱塩基およびそれらの組み合わせからなる群から選択される種を含む、請求項1に記載の組成物。
- 前記エッチング液が、テトラフルオロホウ酸またはヘキサフルオロケイ酸を含む、請求項1に記載の組成物。
- 前記酸化剤が、FeCl3(水和および非水和の両方)、Fe(NO3)3、Sr(NO3)2、CoF3、FeF3、MnF3、オキソン(2KHSO5・KHSO4・K2SO4)、過ヨウ素酸、ヨウ素酸、酸化バナジウム(V)、酸化バナジウム(IV、V)、バナジウム酸アンモニウム、アンモニウムペルオキソモノスルフェート、亜塩素酸アンモニウム(NH4ClO2)、塩素酸アンモニウム(NH4ClO3)、ヨウ素酸アンモニウム(NH4IO3)、硝酸アンモニウム(NH4NO3)、過ホウ酸アンモニウム(NH4BO3)、過塩素酸アンモニウム(NH4ClO4)、過ヨウ素酸アンモニウム(NH4IO3)、過硫酸アンモニウム((NH4)2S2O8)、次亜塩素酸アンモニウム(NH4ClO)、タングステン酸アンモニウム((NH4)10H2(W2O7))、過硫酸ナトリウム(Na2S2O8)、次亜塩素酸ナトリウム(NaClO)、過ホウ酸ナトリウム、ヨウ素酸カリウム(KIO3)、過マンガン酸カリウム(KMnO4)、過硫酸カリウム、硝酸(HNO3)、過硫酸カリウム(K2S2O8)、次亜塩素酸カリウム(KClO)、亜塩素酸テトラメチルアンモニウム((N(CH3)4)ClO2)、塩素酸テトラメチルアンモニウム((N(CH3)4)ClO3)、ヨウ素酸テトラメチルアンモニウム((N(CH3)4)IO3)、過ホウ酸テトラメチルアンモニウム((N(CH3)4)BO3)、過塩素酸テトラメチルアンモニウム((N(CH3)4)ClO4)、過ヨウ素酸テトラメチルアンモニウム((N(CH3)4)IO4)、過硫酸テトラメチルアンモニウム((N(CH3)4)S2O8)、テトラブチルアンモニウムペルオキソモノスルフェート、ペルオキソモノ硫酸、硝酸鉄(Fe(NO3)3)、過酢酸(CH3(CO)OOH)、1,4−ベンゾキノン、トルキノン、ジメチル−1,4−ベンゾキノン、クロラニル、アロキサン、N−メチルモルホリンN−オキシド、トリメチルアミンN−オキシドおよびそれらの組み合わせからなる群から選択される種を含む、請求項1〜3のいずれか一項に記載の組成物。
- 前記酸化剤が、酸化バナジウム、ヨウ素酸アンモニウム、過ヨウ素酸アンモニウム、バナジウム酸アンモニウム、ヨウ素酸、過ヨウ素酸および1,4−ベンゾキノンからなる群から選択される種を含む、請求項1〜4のいずれか一項に記載の組成物。
- 前記酸化剤が、ヨウ素酸アンモニウム、過ヨウ素酸アンモニウム、ヨウ素酸および過ヨウ素酸からなる群から選択される種を含む、請求項1〜5のいずれか一項に記載の組成物。
- ケトンを含む、少なくとも1種のヨウ素捕捉剤をさらに含む、請求項6に記載の組成物。
- 4−メチル−2−ペンタノン、2,4−ジメチル−3−ペンタノン、シクロヘキサノン、5−メチル−3−ヘプタノン、3−ペンタノン、5−ヒドロキシ−2−ペンタノン、2,5−ヘキサンジオン、4−ヒドロキシ−4−メチル−2−ペンタノン、アセトン、ブタノン、2−メチル−2−ブタノン、3,3−ジメチル−2−ブタノン、4−ヒドロキシ−2−ブタノン、シクロペンタノン、2−ペンタノン、3−ペンタノン、1−フェニルエタノン、アセトフェノン、ベンゾフェノン、2−ヘキサノン、3−ヘキサノン、2−ヘプタノン、3−ヘプタノン、4−ヘプタノン、2,6−ジメチル−4−ヘプタノン、2−オクタノン、3−オクタノン、4−オクタノン、ジシクロヘキシルケトン、2,6−ジメチルシクロヘキサノン、2−アセチルシクロヘキサノン、2,4−ペンタンジオン、メントンおよびそれらの組み合わせからなる群から選択される、少なくとも1種のヨウ素捕捉剤をさらに含む、請求項6に記載の組成物。
- 4−メチル−2−ペンタノン、2,4−ジメチル−3−ペンタノンおよびシクロヘキサノンからなる群から選択される、少なくとも1種のヨウ素捕捉剤をさらに含む、請求項6に記載の組成物。
- 前記少なくとも1種の溶媒が水を含む、請求項1〜9のいずれか一項に記載の組成物。
- 前記組成物の全重量に基づき、少なくとも約98重量%の水を含む、請求項1〜10のいずれか一項に記載の組成物。
- 少なくとも1種の腐食抑制剤をさらに含む、請求項1〜11のいずれか一項に記載の組成物。
- 前記少なくとも1種の腐食抑制剤が、5−アミノ−1,3,4−チアジアゾール−2−チオール(ATDT)、ベンゾトリアゾール(BTA)、1,2,4−トリアゾール(TAZ)、トリルトリアゾール、5−メチル−ベンゾトリアゾール、5−フェニル−ベンゾトリアゾール、5−ニトロ−ベンゾトリアゾール、ベンゾトリアゾールカルボン酸、3−アミノ−5−メルカプト−1,2,4−トリアゾール、1−アミノ−1,2,4−トリアゾール、ヒドロキシベンゾトリアゾール、2−(5−アミノ−ペンチル)−ベンゾトリアゾール、1−アミノ−1,2,3−トリアゾール、1−アミノ−5−メチル−1,2,3−トリアゾール、3−アミノ−1,2,4−トリアゾール、3−メルカプト−1,2,4−トリアゾール、3−イソプロピル−1,2,4−トリアゾール、5−フェニルチオール−ベンゾトリアゾール、ハロ−ベンゾトリアゾール(ハロ=F、Cl、BrまたはI)、ナフトトリアゾール、2−メルカプトベンゾイミダゾール(MBI)、2−メルカプトベンゾチアゾール、4−メチル−2−フェニルイミダゾール、2−メルカプトチアゾリン、5−アミノテトラゾール、ペンチレンテトラゾール、5−フェニル−1H−テトラゾール、5−ベンジル−1H−テトラゾール、Ablumine O、2−ベンジルピリジン、スクシンイミド、2,4−ジアミノ−6−メチル−1,3,5−トリアジン、チアゾール、トリアジン、メチルテトラゾール、1,3−ジメチル−2−イミダゾリジノン、1,5−ペンタメチレンテトラゾール、1−フェニル−5−メルカプトテトラゾール、ジアミノメチルトリアジン、イミダゾリンチオン、4−メチル−4H−1,2,4−トリアゾール−3−チオール、ベンゾチアゾール、イミダゾール、インジアゾール、アデノシン、カルバゾール、サッカリン、ベンゾインオキシム、PolyFox PF-159、ポリ(エチレングリコール)、ポリ(プロピレングリコール)、PEG−PPGコポリマー、ドデシルベンゼンスルホン酸、ナトリウムドデシルベンゼンスルホネートおよびそれらの組み合わせからなる群から選択される種を含む、請求項12に記載の組成物。
- 前記少なくとも1種の腐食抑制剤が、カチオン系四級塩、例えば、ベンザルコニウムクロリド、ベンジルジメチルドデシルアンモニウムクロリド、ミリスチルトリメチルアンモニウムブロミド、ドデシルトリメチルアンモニウムブロミド、ヘキサデシルピリジニウムクロリド、Aliquat 336、ベンジルジメチルフェニルアンモニウムクロリド、Crodaquat TES、Rewoquat CPEM、ヘキサデシルトリメチルアンモニウムp−トルエンスルホネート、ヘキサデシルトリメチルアンモニウムヒドロキシド、1−メチル−1’−テトラデシル4,4’−ビピリジウムジクロリド、アルキルトリメチルアンモニウムブロミド、アンプロリウムヒドロクロリド、ベンゼトニウムヒドロキシド、ベンゼトニウムクロリド、ベンジルジメチルヘキサデシルアンモニウムクロリド、ベンジルジメチルテトラデシルアンモニウムクロリド、ベンジルドデシルジメチルアンモニウムブロミド、ベンジルドデシルジメチルアンモニウムクロリド、セチルピリジニウムクロリド、コリンp−トルエンスルホネート塩、ジメチルジオクタデシルアンモニウムブロミド、ドデシルエチルジメチルアンモニウムブロミド、ドデシルトリメチルアンモニウムクロリド、エチルヘキサデシルジメチルアンモニウムブロミド、ジラール試薬、ヘキサデシル(2−ヒドロキシエチル)ジメチルアンモニウム二水素ホスフェート、デキサデシルピリジニウムブロミド、ヘキサデシルトリメチルアンモニウムブロミド、ヘキサデシルトリメチルアンモニウムクロリド、メチルベンゼトニウムクロリド、Hyamine(登録商標)1622、Luviquat(商標)、N,N’,N’,−ポリオキシエチレン(10)−N−タロー−1,3−ジアミノプロパン液、オキシフェノニウムブロミド、テトラヘプチルアンモニウムブロミド、テトラキス(デシル)アンモニウムブロミド、トンゾニウムブロミド、トリドデシルアンモニウムクロリド、トリメチルオクタデシルアンモニウムブロミド、1−メチル−3−n−オクチルイミダゾリウムテトラフルオロボレート、1−デシル−3−メチルイミダゾリウムテトラフルオロボレート、1−デシル−3−メチルイミダゾリウムクロリド、トリドデシルメチルアンモニウムブロミド、ジメチルジステアリルアンモニウムクロリドおよびヘキサメソニウムクロリドからなる群から選択されるカチオン系四級種を含む、請求項12に記載の組成物。
- 少なくとも1種の界面活性剤、少なくとも1種の低誘電率不動態化剤、少なくとも1種のケイ素含有化合物およびそれらの組み合わせからなる群から選択される少なくとも1種の追加成分をさらに含む、請求項1〜14のいずれか一項に記載の組成物。
- ホウ酸、アンモニウムペンタボレート、ナトリウムテトラボレート、3−ヒドロキシ−2−ナフトエ酸、マロン酸、イミノジ酢酸およびそれらの組み合わせからなる群から選択される少なくとも1種の不動態化剤を含む、請求項15に記載の組成物。
- メチルトリメトキシシラン、ジメチルジメトキシシラン、フェニルトリメトキシシラン、テトラエトキシシラン(TEOS)、N−プロピルトリメトキシシラン、N−プロピルトリエトキシシラン、ヘキシルトリメトキシシラン、ヘキシルトリエトキシシラン、アンモニウムヘキサフルオロシリケート、ケイ酸ナトリウム、テトラメチルアンモニウムシリケート(TMAS)およびそれらの組み合わせからなる群から選択される少なくとも1種のケイ素含有化合物を含む、請求項15または16に記載の組成物。
- アミン、研磨剤材料、クロリド供給源、金属ハロゲン化物およびそれらの組み合わせを実質的に含まない、請求項1〜17のいずれか一項に記載の組成物。
- pHが0〜4の範囲である、請求項1〜18のいずれか一項に記載の組成物。
- 窒化チタンおよび/またはフォトレジストエッチング残渣材料をその上に有するマイクロエレクトロニクスデバイスの表面から窒化チタンおよび/またはフォトレジストエッチング残渣材料を選択的に除去するための組成物であって、少なくとも1種の酸化剤、少なくとも1種のエッチング液、少なくとも1種の金属腐食抑制剤および少なくとも1種の溶媒を含む組成物。
- 前記エッチング液が、H2ZrF6、H2TiF6、HPF6、HF、アンモニウムフルオリド、テトラフルオロホウ酸、ヘキサフルオロケイ酸、テトラブチルアンモニウムテトラフルオロボレート(TBA−BF4)、アンモニウムヘキサフルオロシリケート、アンモニウムヘキサフルオロチタネート、テトラメチルアンモニウムヒドロキシド(TMAH)、テトラエチルアンモニウムヒドロキシド(TEAH)、テトラプロピルアンモニウムヒドロキシド(TPAH)、テトラブチルアンモニウムヒドロキシド(TBAH)、ベンジルトリメチルアンモニウムヒドロキシド(BTMAH)、水酸化カリウム、水酸化アンモニウム、ベンジルトリエチルアンモニウムヒドロキシド(BTEAH)、テトラブチルホスホニウムヒドロキシド(TBPH)、(2−ヒドロキシエチル)トリメチルアンモニウムヒドロキシド、(2−ヒドロキシエチル)トリエチルアンモニウムヒドロキシド、(2−ヒドロキシエチル)トリプロピルアンモニウムヒドロキシド、(1−ヒドロキシプロピル)トリメチルアンモニウムヒドロキシド、エチルトリメチルアンモニウムヒドロキシド、ジエチルジメチルアンモニウムヒドロキシド(DEDMAH)、1,1,3,3−テトラメチルグアニジン(TMG)、炭酸グアニジン、アルギニン、水酸化アンモニウム、モノエタノールアミン(MEA)、ジエタノールアミン(DEA)、トリエタノールアミン(TEA)、エチレンジアミン、システイン、テトラアルキルアンモニウムフルオリド(NR1R2R3R4F)(式中、R1、R2、R3、R4は同一であっても、または互いに異なってもよく、かつ直鎖もしくは分枝鎖C1〜C6アルキル基からなる群から選択される)およびそれらの組み合わせからなる群から選択される種を含む、請求項20に記載の組成物。
- 前記エッチング液がTMAHを含む、請求項20または21に記載の組成物。
- 前記酸化剤が、過酸化水素、FeCl3、FeF3、Fe(NO3)3、Sr(NO3)2、CoF3、MnF3、オキソン(2KHSO5・KHSO4・K2SO4)、過ヨウ素酸、ヨウ素酸、酸化バナジウム(V)、酸化バナジウム(IV、V)、バナジウム酸アンモニウム、アンモニウムペルオキソモノスルフェート、亜塩素酸アンモニウム(NH4ClO2)、塩素酸アンモニウム(NH4ClO3)、ヨウ素酸アンモニウム(NH4IO3)、硝酸アンモニウム(NH4NO3)、過ホウ酸アンモニウム(NH4BO3)、過塩素酸アンモニウム(NH4ClO4)、過ヨウ素酸アンモニウム(NH4IO3)、過硫酸アンモニウム((NH4)2S2O8)、次亜塩素酸アンモニウム(NH4ClO)、タングステン酸アンモニウム((NH4)10H2(W2O7))、過硫酸ナトリウム(Na2S2O8)、次亜塩素酸ナトリウム(NaClO)、過ホウ酸ナトリウム、ヨウ素酸カリウム(KIO3)、過マンガン酸カリウム(KMnO4)、過硫酸カリウム、硝酸(HNO3)、過硫酸カリウム(K2S2O8)、次亜塩素酸カリウム(KClO)、亜塩素酸テトラメチルアンモニウム((N(CH3)4)ClO2)、塩素酸テトラメチルアンモニウム((N(CH3)4)ClO3)、ヨウ素酸テトラメチルアンモニウム((N(CH3)4)IO3)、過ホウ酸テトラメチルアンモニウム((N(CH3)4)BO3)、過塩素酸テトラメチルアンモニウム((N(CH3)4)ClO4)、過ヨウ素酸テトラメチルアンモニウム((N(CH3)4)IO4)、過硫酸テトラメチルアンモニウム((N(CH3)4)S2O8)、テトラブチルアンモニウムペルオキソモノスルフェート、ペルオキソモノ硫酸、硝酸鉄(Fe(NO3)3)、過酸化尿素水素((CO(NH2)2)H2O2)、過酢酸(CH3(CO)OOH)、1,4−ベンゾキノン、トルキノン、ジメチル−1,4−ベンゾキノン、クロラニル、アロキサン、N−メチルモルホリンN−オキシド、トリメチルアミンN−オキシドおよびそれらの組み合わせからなる群から選択される種を含む、請求項20〜22のいずれか一項に記載の組成物。
- 前記酸化剤が過酸化水素を含む、請求項20〜23のいずれか一項に記載の組成物。
- 少なくとも1種の溶媒が水を含む、請求項20〜24のいずれか一項に記載の組成物。
- 少なくとも1種のカルボン酸塩をさらに含む、請求項20〜25のいずれか一項に記載の組成物。
- 前記カルボン酸塩が、アンモニウムカチオンと、酢酸、安息香酸、クエン酸、ギ酸、シュウ酸、酒石酸、コハク酸、乳酸、マレイン酸、マロン酸、フマル酸、リンゴ酸、アスコルビン酸、マンデル酸およびフタル酸からなる群から選択されるアニオンとを含む、請求項26に記載の組成物。
- 前記カルボン酸塩が、酢酸アンモニウム、安息香酸アンモニウムまたはそれらの組み合わせを含む、請求項26に記載の組成物。
- 5−アミノ−1,3,4−チアジアゾール−2−チオール(ATDT)、ベンゾトリアゾール(BTA)、1,2,4−トリアゾール(TAZ)、トリルトリアゾール、5−メチル−ベンゾトリアゾール、5−フェニル−ベンゾトリアゾール、5−ニトロ−ベンゾトリアゾール、ベンゾトリアゾールカルボン酸、3−アミノ−5−メルカプト−1,2,4−トリアゾール、1−アミノ−1,2,4−トリアゾール、ヒドロキシベンゾトリアゾール、2−(5−アミノ−ペンチル)−ベンゾトリアゾール、1−アミノ−1,2,3−トリアゾール、1−アミノ−5−メチル−1,2,3−トリアゾール、3−アミノ−1,2,4−トリアゾール、3−メルカプト−1,2,4−トリアゾール、3−イソプロピル−1,2,4−トリアゾール、5−フェニルチオール−ベンゾトリアゾール、ハロ−ベンゾトリアゾール(ハロ=F、Cl、BrまたはI)、ナフトトリアゾール、2−メルカプトベンゾイミダゾール(MBI)、2−メルカプトベンゾチアゾール、4−メチル−2−フェニルイミダゾール、2−メルカプトチアゾリン、5−アミノテトラゾール、ペンチレンテトラゾール、5−フェニル−1H−テトラゾール、5−ベンジル−1H−テトラゾール、Ablumine O、2−ベンジルピリジン、スクシンイミド、2,4−ジアミノ−6−メチル−1,3,5−トリアジン、チアゾール、トリアジン、メチルテトラゾール、1,3−ジメチル−2−イミダゾリジノン、1,5−ペンタメチレンテトラゾール、1−フェニル−5−メルカプトテトラゾール、ジアミノメチルトリアジン、イミダゾリンチオン、4−メチル−4H−1,2,4−トリアゾール−3−チオール、ベンゾチアゾール、イミダゾール、インジアゾール、アデノシン、カルバゾール、サッカリン、ベンゾインオキシム、PolyFox PF-159、ポリ(エチレングリコール)、ポリ(プロピレングリコール)、PEG−PPGコポリマー、ドデシルベンゼンスルホン酸およびそれらの組み合わせからなる群から選択される、少なくとも1種の金属腐食抑制剤をさらに含む、請求項20〜28のいずれか一項に記載の組成物。
- 前記金属腐食抑制剤が5−メチル−1H−ベンゾトリアゾールを含む、請求項29に記載の組成物。
- ベンザルコニウムクロリド、ベンジルジメチルドデシルアンモニウムクロリド、ミリスチルトリメチルアンモニウムブロミド、ドデシルトリメチルアンモニウムブロミド、ヘキサデシルピリジニウムクロリド、Aliquat 336、ベンジルジメチルフェニルアンモニウムクロリド、Crodaquat TES、Rewoquat CPEM、ヘキサデシルトリメチルアンモニウムp−トルエンスルホネート、ヘキサデシルトリメチルアンモニウムヒドロキシド、1−メチル−1’−テトラデシル4,4’−ビピリジウムジクロリド、アルキルトリメチルアンモニウムブロミド、アンプロリウムヒドロクロリド、ベンゼトニウムヒドロキシド、ベンゼトニウムクロリド、ベンジルジメチルヘキサデシルアンモニウムクロリド、ベンジルジメチルテトラデシルアンモニウムクロリド、ベンジルドデシルジメチルアンモニウムブロミド、ベンジルドデシルジメチルアンモニウムクロリド、セチルピリジニウムクロリド、コリンp−トルエンスルホネート塩、ジメチルジオクタデシルアンモニウムブロミド、ドデシルエチルジメチルアンモニウムブロミド、ドデシルトリメチルアンモニウムクロリド、エチルヘキサデシルジメチルアンモニウムブロミド、ジラール試薬、ヘキサデシル(2−ヒドロキシエチル)ジメチルアンモニウム二水素ホスフェート、デキサデシルピリジニウムブロミド、ヘキサデシルトリメチルアンモニウムブロミド、ヘキサデシルトリメチルアンモニウムクロリド、メチルベンゼトニウムクロリド、Hyamine(登録商標)1622、Luviquat(商標)、N,N’,N’,−ポリオキシエチレン(10)−N−タロー−1,3−ジアミノプロパン液、オキシフェノニウムブロミド、テトラヘプチルアンモニウムブロミド、テトラキス(デシル)アンモニウムブロミド、トンゾニウムブロミド、トリドデシルアンモニウムクロリド、トリメチルオクタデシルアンモニウムブロミド、1−メチル−3−n−オクチルイミダゾリウムテトラフルオロボレート、1−デシル−3−メチルイミダゾリウムテトラフルオロボレート、1−デシル−3−メチルイミダゾリウムクロリド、トリドデシルメチルアンモニウムブロミド、ジメチルジステアリルアンモニウムクロリドおよびヘキサメソニウムクロリドからなる群から選択される、少なくとも1種の金属腐食抑制剤をさらに含む、請求項20〜28のいずれか一項に記載の組成物。
- 少なくとも1種の酸化剤安定剤をさらに含む、請求項20〜31のいずれか一項に記載の組成物。
- 前記酸化剤安定剤が、グリシン、セリン、プロリン、ロイシン、アラニン、アスパラギン、アスパラギン酸、グルタミン、バリンおよびリジン、ニトリロトリ酢酸、イミノジ酢酸、エチドロン酸、エチレンジアミンテトラ酢酸(EDTA)、(1,2−シクロヘキシレンジニトリロ)テトラ酢酸(CDTA)、尿酸、テトラグリム、ジエチレントリアミンペンタ酢酸、プロピレンジアミンテトラ酢酸、エチレンジアミンジコハク酸、スルファニルアミドおよびそれらの組み合わせからなる群から選択される種を含む、請求項32に記載の組成物。
- 前記酸化剤安定剤が、CDTA、スルファニルアミドまたはそれらの組み合わせを含む、請求項32に記載の組成物。
- 少なくとも1種の界面活性剤、少なくとも1種の低誘電率不動態化剤およびそれらの組み合わせからなる群から選択される少なくとも1種の追加成分をさらに含む、請求項20〜34のいずれか一項に記載の組成物。
- ケイ酸塩、研磨剤材料、クロリド供給源、金属ハロゲン化物およびそれらの組み合わせを実質的に含まない、請求項20〜35のいずれか一項に記載の組成物。
- pHがの範囲である、請求項20〜36のいずれか一項に記載の組成物。
- 窒化チタン材料をその上に有するマイクロエレクトロニクスデバイスの表面から窒化チタン材料をエッチングする方法であって、前記表面を、請求項1〜37のいずれか一項に記載の組成物と接触させる工程を含み、前記組成物が、金属および絶縁材料と比較して、前記表面から前記窒化チタン材料を選択的に除去する方法。
- 前記接触工程が、約20℃〜約100℃の範囲の温度で、約0.3分〜約30分の範囲の時間を含む、請求項38に記載の方法。
- 前記組成物を、前記所望のエッチング作用に続いて、前記表面からすすぐ、請求項38〜39のいずれか一項に記載の方法。
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JP2016195251A (ja) * | 2015-03-31 | 2016-11-17 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | 窒化チタンハードマスクの選択的除去及びエッチング残留物の除去 |
JP2018093225A (ja) * | 2015-05-01 | 2018-06-14 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 窒化チタンハードマスク及びエッチ残留物除去 |
JP2019165225A (ja) * | 2018-03-16 | 2019-09-26 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | タングステンワード線リセスのためのエッチング溶液 |
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KR20230146553A (ko) | 2021-02-12 | 2023-10-19 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 반도체기판 세정용 조성물, 그리고 반도체기판의 세정방법 및 제조방법 |
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EP2798669A4 (en) | 2015-08-19 |
EP2798669A1 (en) | 2014-11-05 |
KR20140132708A (ko) | 2014-11-18 |
CN104145324B (zh) | 2017-12-22 |
TW201333171A (zh) | 2013-08-16 |
US10392560B2 (en) | 2019-08-27 |
US20150027978A1 (en) | 2015-01-29 |
US9546321B2 (en) | 2017-01-17 |
CN104145324A (zh) | 2014-11-12 |
SG11201403556WA (en) | 2014-07-30 |
EP2798669B1 (en) | 2021-03-31 |
US20170260449A1 (en) | 2017-09-14 |
KR102102792B1 (ko) | 2020-05-29 |
TWI588239B (zh) | 2017-06-21 |
WO2013101907A1 (en) | 2013-07-04 |
SG10201605172RA (en) | 2016-08-30 |
JP6329909B2 (ja) | 2018-05-23 |
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