JP2019165225A - タングステンワード線リセスのためのエッチング溶液 - Google Patents
タングステンワード線リセスのためのエッチング溶液 Download PDFInfo
- Publication number
- JP2019165225A JP2019165225A JP2019049324A JP2019049324A JP2019165225A JP 2019165225 A JP2019165225 A JP 2019165225A JP 2019049324 A JP2019049324 A JP 2019049324A JP 2019049324 A JP2019049324 A JP 2019049324A JP 2019165225 A JP2019165225 A JP 2019165225A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- etching solution
- etching
- tin
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 112
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000010937 tungsten Substances 0.000 title claims abstract description 55
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 238000005260 corrosion Methods 0.000 claims abstract description 34
- 230000007797 corrosion Effects 0.000 claims abstract description 34
- 239000003112 inhibitor Substances 0.000 claims abstract description 33
- 239000003960 organic solvent Substances 0.000 claims abstract description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 22
- 239000011737 fluorine Substances 0.000 claims abstract description 22
- 239000002738 chelating agent Substances 0.000 claims abstract description 20
- 239000004094 surface-active agent Substances 0.000 claims abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract 7
- 239000000203 mixture Substances 0.000 claims description 137
- 238000000034 method Methods 0.000 claims description 33
- 239000007800 oxidant agent Substances 0.000 claims description 31
- -1 hexafluorosilicic acid Chemical compound 0.000 claims description 26
- 238000004377 microelectronic Methods 0.000 claims description 21
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
- 150000003839 salts Chemical class 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 13
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 150000001412 amines Chemical class 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229920002873 Polyethylenimine Polymers 0.000 claims description 7
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 7
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 7
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 6
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 6
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N NMP Substances CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 229960004889 salicylic acid Drugs 0.000 claims description 5
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 5
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- HIMXGTXNXJYFGB-UHFFFAOYSA-N alloxan Chemical compound O=C1NC(=O)C(=O)C(=O)N1 HIMXGTXNXJYFGB-UHFFFAOYSA-N 0.000 claims description 4
- 150000008064 anhydrides Chemical class 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- 150000002989 phenols Chemical class 0.000 claims description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 4
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 4
- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 claims description 3
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 3
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 3
- 229940120146 EDTMP Drugs 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 3
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 3
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229960003330 pentetic acid Drugs 0.000 claims description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 150000003462 sulfoxides Chemical class 0.000 claims description 3
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 claims description 2
- NAOLWIGVYRIGTP-UHFFFAOYSA-N 1,3,5-trihydroxyanthracene-9,10-dione Chemical compound C1=CC(O)=C2C(=O)C3=CC(O)=CC(O)=C3C(=O)C2=C1 NAOLWIGVYRIGTP-UHFFFAOYSA-N 0.000 claims description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 2
- BNXZHVUCNYMNOS-UHFFFAOYSA-N 1-butylpyrrolidin-2-one Chemical compound CCCCN1CCCC1=O BNXZHVUCNYMNOS-UHFFFAOYSA-N 0.000 claims description 2
- AIACLXROWHONEE-UHFFFAOYSA-N 2,3-dimethylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=C(C)C(=O)C=CC1=O AIACLXROWHONEE-UHFFFAOYSA-N 0.000 claims description 2
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 claims description 2
- ZIMXAFGAUMQPMG-UHFFFAOYSA-N 2-[4-[bis(carboxymethyl)amino]butyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCCCN(CC(O)=O)CC(O)=O ZIMXAFGAUMQPMG-UHFFFAOYSA-N 0.000 claims description 2
- XWSGEVNYFYKXCP-UHFFFAOYSA-N 2-[carboxymethyl(methyl)amino]acetic acid Chemical compound OC(=O)CN(C)CC(O)=O XWSGEVNYFYKXCP-UHFFFAOYSA-N 0.000 claims description 2
- KWYJDIUEHHCHCZ-UHFFFAOYSA-N 3-[2-[bis(2-carboxyethyl)amino]ethyl-(2-carboxyethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CCC(O)=O)CCN(CCC(O)=O)CCC(O)=O KWYJDIUEHHCHCZ-UHFFFAOYSA-N 0.000 claims description 2
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 claims description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 claims description 2
- RFSUNEUAIZKAJO-VRPWFDPXSA-N D-Fructose Natural products OC[C@H]1OC(O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-VRPWFDPXSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 2
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims description 2
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims description 2
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims description 2
- 101100396546 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) tif-6 gene Proteins 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 claims description 2
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims description 2
- 235000018417 cysteine Nutrition 0.000 claims description 2
- 229960002433 cysteine Drugs 0.000 claims description 2
- NMGYKLMMQCTUGI-UHFFFAOYSA-J diazanium;titanium(4+);hexafluoride Chemical compound [NH4+].[NH4+].[F-].[F-].[F-].[F-].[F-].[F-].[Ti+4] NMGYKLMMQCTUGI-UHFFFAOYSA-J 0.000 claims description 2
- 150000002009 diols Chemical class 0.000 claims description 2
- 150000002170 ethers Chemical class 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- MZMRZONIDDFOGF-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.CCCCCCCCCCCCCCCC[N+](C)(C)C MZMRZONIDDFOGF-UHFFFAOYSA-M 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 229960002510 mandelic acid Drugs 0.000 claims description 2
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 claims description 2
- 229960003540 oxyquinoline Drugs 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 claims description 2
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- 239000000473 propyl gallate Substances 0.000 claims description 2
- 229940075579 propyl gallate Drugs 0.000 claims description 2
- 235000010388 propyl gallate Nutrition 0.000 claims description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 229940079877 pyrogallol Drugs 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 claims description 2
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 claims description 2
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 claims description 2
- UYPYRKYUKCHHIB-UHFFFAOYSA-N trimethylamine N-oxide Chemical compound C[N+](C)(C)[O-] UYPYRKYUKCHHIB-UHFFFAOYSA-N 0.000 claims description 2
- MWOOGOJBHIARFG-UHFFFAOYSA-N vanillin Chemical compound COC1=CC(C=O)=CC=C1O MWOOGOJBHIARFG-UHFFFAOYSA-N 0.000 claims description 2
- FGQOOHJZONJGDT-UHFFFAOYSA-N vanillin Natural products COC1=CC(O)=CC(C=O)=C1 FGQOOHJZONJGDT-UHFFFAOYSA-N 0.000 claims description 2
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- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 2
- 235000011187 glycerol Nutrition 0.000 claims 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 2
- 229940005561 1,4-benzoquinone Drugs 0.000 claims 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 claims 1
- 150000007513 acids Chemical class 0.000 claims 1
- 235000010323 ascorbic acid Nutrition 0.000 claims 1
- 239000011668 ascorbic acid Substances 0.000 claims 1
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- 238000010189 synthetic method Methods 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical group OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003852 triazoles Chemical group 0.000 description 1
- HJHUXWBTVVFLQI-UHFFFAOYSA-N tributyl(methyl)azanium Chemical compound CCCC[N+](C)(CCCC)CCCC HJHUXWBTVVFLQI-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 229940011671 vitamin b6 Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
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Abstract
Description
本願は、2018年3月16日出願の米国特許仮出願第62/644,131号および2018年4月11日出願の米国特許仮出願第62/655,856号に対して、合衆国法典第35巻第119条e項に基づく優先権を主張するものであり、その全体を引用することによって本明細書の内容とする。
水
酸化剤
溶媒(随意選択的)
本発明のエッチング溶液組成物は、随意選択的に1種もしくは2種以上の水混和性の有機溶媒を含んでいる。用いることができる水混和性有機溶媒の例としては、エチレングリコール、プロピレングリコール、1,4−ブタンジオール、トリプロピレングリコールメチルエーテル、プロピレングリコールプロピルエーテル、ジエチレングリコールn−ブチルエーテル(例えば、Dowanol DBの商品名で商業的に入手可能)、グリコールエーテル(Dowanol DPMとして商業的に入手可能)、ヘキシルオキシプロピルアミン、プロピレングリコールメチルエーテルアセテート(PGMEA)、ポリ(オキシエチレン)ジアミン、ジメチルアセトアミド、N−メチルピロリドン、トリエチルホスフェート、スルホラン、テトラヒドロフルフリルアルコール、グリセロール、アルコール、スルホキシド、またはそれらの混合物がある。好ましい溶媒は、アルコール、グリコールエーテル、ジオール、スルホキシド、ジメチルアセトアミド、N−メチルピロリドン、トリエチルホスフェート、スルホランまたはそれらの混合物であることができる。
フッ素含有エッチング化合物(随意選択的)
有機酸のアンモニウム塩(随意選択的)
金属キレート化剤(随意選択的)
腐食防止剤(随意選択的)
更に他の態様では、本発明の組成物の1種もしくは2種以上の腐食防止剤は、アミンを含んでおり、そしてN,N,N,N,N−ペンタメチルジエチレントリアミン、N,N−ジメチル−p−フェニレンジアミン、ポリ(エチレンイミン)、エチレンジアミン、(,1−オクチルアミン、4−イソプロピルアニリン、ジエチレントリアミン、およびそれらの混合物が挙げられる。本発明の組成物に腐食防止剤として有用な他のアミンとしては、5もしくは6員のヘテロ環式アミン、例えばピロリジン、ピリジン、ピリドキシン、モルホリンおよびピペラジンおよびそれらの混合物が挙げられる。腐食防止剤は、モルホリンおよびピペラジン、例えば3−モルホリノプロピルアミン(APN)、1−(2−アミノエチル)ピペラジン(AEP)、4−(2−ヒドロキシエチル)モルホリン(HEM)、(ヒドロキシプロピル)モルホリン、アミノエチルモルホリン、アミノプロピルモルホリン、およびそれらの混合物であることができる。
他の随意選択的な成分
pH
方法
洗浄組成物の調製の包括的な手順
基材の組成
処理条件
所望の温度において、5分間(TiN、WおよびAlOx)が共通して用いられた条件である。
エッチング速度測定の手順
表6〜11中に列挙された成分は、表1〜5とは対照的に、それらが加えられた水溶液の量で記載されたものではなく、それらの組成物中に存在する正味の量で記載されている。上記で規定された水溶液に加えて、以下の例では、LUPASOLが、0.01%の濃度の溶液でそれらの組成物に加えられた。表6〜11で報告された水の量は、従って全ての原料からのその組成物中の合計の水である。
Claims (20)
- タングステン含有金属およびTiN含有材料の両方に好適なエッチング溶液であって、
水、
1種もしくは2種以上の酸化剤、
1種もしくは2種以上のフッ素含有エッチング化合物、1種もしくは2種以上の有機溶媒、1種もしくは2種以上のキレート化剤、1種もしくは2種以上の腐食防止剤、および1種もしくは2種以上の界面活性剤から選択される1種または2種以上の成分、
を含んでなるエッチング溶液。 - 前記1種もしくは2種以上の酸化剤が、過酸化水素(H2O2)、FeCl3、FeF3、Sr(NO3)2、CoF3、MnF3;KHSO5、KHSO4およびK2SO4を含むモノ過硫酸塩化合物;過ヨウ素酸、ヨウ素酸、酸化バナジウム(V)、酸化バナジウム(IV、V)、バナジウム酸アンモニウム、アンモニウム多原子塩、ナトリウム多原子塩、カリウム多原子塩、硝酸(HNO3)、過硫酸カリウム(K2S2O8)、次亜塩素酸カリウム(KClO)、テトラメチルアンモニウム多原子塩、テトラブチルアンモニウム多原子塩、ペルオキソモノ硫酸、硝酸第二鉄(Fe(NO3)3)、尿素過酸化水素((CO(NH2)2)H2O2)、リン酸(H3PO4)、過酢酸(CH3(CO)OOH)、1,4−ベンゾキノン、トルキノン、ジメチル−1,4−ベンゾキノン、クロラニル、アロキサン、N−メチルモルホリン N−オキシド、トリメチルアミン N−オキシド、およびそれらの混合物から選択される、請求項1記載のエッチング溶液。
- 前記1種もしくは2種以上の酸化剤が、過酸化水素(H2O2)、リン酸(H3PO4)、硝酸(HNO3)、およびそれらの混合物から選択される、請求項1記載のエッチング溶液。
- 前記1種もしくは2種以上のフッ素含有エッチング化合物を含む、請求項1記載のエッチング溶液。
- 前記1種もしくは2種以上のフッ素含有エッチング化合物が、第四級アンモニウムフルオリド、HF、テトラフルオロホウ酸、ヘキサフルオロケイ酸、テトラブチルアンモニウムテトラフルオロホウ酸塩(TBA−BF4)、H2ZrF6、H2TiF6、HPF6、ヘキサフルオロケイ酸アンモニウム、ヘキサフルオロチタン酸アンモニウム、およびそれらの混合物から選択される、請求項4記載のエッチング溶液。
- 前記1種もしくは2種以上のフッ素含有エッチング化合物が、第四級アンモニウムフルオリドおよびHF、およびそれらの混合物から選択される、請求項4記載のエッチング溶液。
- 前記1種もしくは2種以上の有機溶媒を含む、請求項1記載のエッチング溶液。
- 前記1種もしくは2種以上の有機溶媒が、アルコール、グリコールエーテル、ジオール、グリセロール、スルホキシド、アミド、酸、エステル、ケトン、エーテル、およびそれらの混合物から選択される、請求項7記載のエッチング溶液。
- 前記1種もしくは2種以上の有機溶媒が、DMSO、ピリジン、リン酸トリエチル、DMAC、NMP、1,3−ジメチル−3,4,5,6−テトラヒドロ−2(1H)−ピリミジノン、1,3−ジメチル−2−イミダゾリジノン、1−ブチル−2−ピロリジノン、メタンスルホン酸、プロピオン酸、乳酸、酢酸、2−(1−メトキシ)プロピルアセテート、プロピレンカーボネート、シクロペンタノン、1,4−ジオキサン、ジメトキシエタン、ポリ(プロピレングリコール)モノブチルエーテル、スルホラン、およびそれらの混合物から選択される、請求項7記載のエッチング溶液。
- 前記1種もしくは2種以上の腐食防止剤を含む、請求項1記載のエッチング溶液。
- 前記1種もしくは2種以上の腐食防止剤が、芳香族ヒドロキシル化合物、少なくとも2つのヒドロキシル基を有するフェノール誘導体、アセチレンアルコール、カルボキシル基含有有機化合物およびそれらの無水物、トリアゾール化合物、D−フルクトース、L−アスコルビン酸、バニリン、サリチル酸、ジエチルヒドロキシルアミン、アミン、アルカノールアミン、複素環式アミン、ポリエチレンイミン、モルホリン、ピペラジン、およびそれらの混合物から選択される、請求項10記載のエッチング溶液。
- 1種もしくは2種以上の界面活性剤を含む、請求項1記載のエッチング溶液。
- 前記1種もしくは2種以上の界面活性剤が、p−トルエンスルホン酸ヘキサデシルトリメチルアンモニウム、フルオロ界面活性剤およびそれらの混合物から選択される、請求項12記載のエッチング溶液。
- 1種もしくは2種以上のキレート化剤を含む、請求項1記載のエッチング溶液。
- 前記1種もしくは2種以上のキレート化剤が、(エチレンジニトリロ)四酢酸(EDTA)、ブチレンジアミン四酢酸、(1,2−シクロヘキシレンジニトリロ−)四酢酸(CyDTA)、ジエチレントリアミン五酢酸(DETPA)、エチレンジアミンテトラプロピオン酸、(ヒドロキシエチル)エチレンジアミン三酢酸(HEDTA)、N,N,N’,N’−エチレンジアミンテトラ(メチレンホスホン)酸(EDTMP)、トリエチレンテトラミン六酢酸(TTHA)、1,3−ジアミノ−2−ヒドロキシプロパン−N,N,N’,N’−四酢酸(DHPTA)、メチルイミノ二酢酸、プロピレンジアミン四酢酸、ニトリロ三酢酸(nitrolotriacetic acid)(NTA)、クエン酸、タンニン酸、酒石酸、グルコン酸、サッカリン酸、グリセリン酸、シュウ酸、フタル酸、マレイン酸、マンデル酸、マロン酸、サリチル酸、没食子酸プロピル、ピロガロール、8−ヒドロキシキノリン、およびシステイン、およびそれらの混合物から選択される、請求項14記載のエッチング溶液。
- 前記溶液が、TiN含有材料およびタングステン含有材料を、約1〜約400Å/分のエッチング速度で、室温でエッチングすることができる、請求項1記載のエッチング溶液。
- TiN含有材料およびタングステン含有材料の少なくとも一方を含むマイクロエレクトロニクス装置から、TiN含有材料およびタングステン含有金属の両方を、該マイクロエレクトロニクス装置の製造の間にエッチングするための方法であって、以下の、
該マイクロエレクトロニクス装置を、水性のエッチング溶液と、該装置から、該TiN含有材料および該タングステン含有金属を、約1〜約400Å/分の速度で、室温において、少なくとも部分的に除去するのに十分な時間に亘って接触させる工程、を含んでなり、該水性のエッチング溶液は、
水、
1種もしくは2種以上の酸化剤、
1種もしくは2種以上のフッ素含有エッチング化合物、1種もしくは2種以上の有機溶媒、1種もしくは2種以上のキレート化剤、1種もしくは2種以上の腐食防止剤、および1種もしくは2種以上の界面活性剤から選択される1種または2種以上の成分、
を含んでいる、
方法。 - 前記水性のエッチング溶液が、前記1種もしくは2種以上のフッ素含有エッチング化合物を含む、請求項17記載の方法。
- 前記水性のエッチング溶液が、前記1種もしくは2種以上の腐食防止剤を含む、請求項17記載の方法。
- 前記水性のエッチング溶液が、前記1種もしくは2種以上の界面活性剤を含む、請求項17記載の方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022190448A1 (ja) * | 2021-03-10 | 2022-09-15 | 花王株式会社 | エッチング液組成物 |
WO2024053647A1 (ja) * | 2022-09-06 | 2024-03-14 | 花王株式会社 | 基板処理方法 |
WO2024062877A1 (ja) * | 2022-09-21 | 2024-03-28 | 富士フイルム株式会社 | 薬液、処理方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10870799B2 (en) * | 2017-08-25 | 2020-12-22 | Versum Materials Us, Llc | Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device |
US10879076B2 (en) * | 2017-08-25 | 2020-12-29 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device |
SG11202107061TA (en) | 2019-01-11 | 2021-07-29 | Versum Materials Us Llc | Hafnium oxide corrosion inhibitor |
JP2022530669A (ja) * | 2019-05-01 | 2022-06-30 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | エッチング組成物 |
US11851772B2 (en) * | 2019-05-14 | 2023-12-26 | Tech Met, Inc. | Composition and method for creating nanoscale surface geometry on an implantable device |
KR20220020363A (ko) * | 2019-06-13 | 2022-02-18 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 에칭 조성물 |
JP7398550B2 (ja) * | 2019-08-21 | 2023-12-14 | インテグリス・インコーポレーテッド | 高度に選択的な窒化ケイ素エッチングのための改良された配合物 |
US20210104411A1 (en) * | 2019-10-04 | 2021-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Etching solution, and method of producing semiconductor device |
KR20210045838A (ko) * | 2019-10-17 | 2021-04-27 | 삼성전자주식회사 | 금속 함유막 식각액 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
JP2022553203A (ja) * | 2019-10-17 | 2022-12-22 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | Euvマスク保護構造のためのエッチング組成物及び方法 |
CN110885979B (zh) * | 2019-12-13 | 2021-12-03 | 湖北兴福电子材料有限公司 | 一种缓释型硅斑蚀刻剂 |
KR20210084018A (ko) * | 2019-12-27 | 2021-07-07 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
US20220243128A1 (en) * | 2020-01-30 | 2022-08-04 | Showa Denko K.K. | Method for removing metal compound |
CN115210339A (zh) * | 2020-03-04 | 2022-10-18 | 弗萨姆材料美国有限责任公司 | 用于氮化钛和钼导电金属线的蚀刻溶液 |
CN113496887B (zh) * | 2020-04-03 | 2023-06-02 | 重庆超硅半导体有限公司 | 一种集成电路用硅片的均匀腐蚀方法 |
TW202212012A (zh) * | 2020-06-15 | 2022-04-01 | 美商蘭姆研究公司 | 在腔室清潔中的錫氧化物的移除 |
WO2022036246A1 (en) * | 2020-08-13 | 2022-02-17 | Entegris, Inc. | Nitride etchant composition and method |
CN112501615B (zh) * | 2020-11-30 | 2023-03-24 | 南通麦特隆新材料科技有限公司 | 一种集成电路外引线电镀层的退镀液及其制备方法 |
US20220208553A1 (en) * | 2020-12-29 | 2022-06-30 | Entegris, Inc. | Selective removal of metal oxide hard masks |
KR20220119860A (ko) * | 2021-02-22 | 2022-08-30 | 삼성전자주식회사 | 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법 |
CN114959712B (zh) * | 2021-02-25 | 2024-02-23 | 中国石油化工股份有限公司 | 一种气相缓蚀剂及其制备方法 |
KR20220126436A (ko) * | 2021-03-09 | 2022-09-16 | 주식회사 이엔에프테크놀로지 | 디스플레이 기판용 식각액 |
JP2022147744A (ja) * | 2021-03-23 | 2022-10-06 | キオクシア株式会社 | 薬液、エッチング方法、及び半導体装置の製造方法 |
CN113604803B (zh) * | 2021-07-07 | 2023-04-25 | 湖北兴福电子材料股份有限公司 | 一种选择蚀刻钨及氮化钛的蚀刻液 |
CN114350365A (zh) * | 2021-12-07 | 2022-04-15 | 湖北兴福电子材料有限公司 | 一种稳定蚀刻氮化钛的蚀刻液 |
CN114369462A (zh) * | 2021-12-16 | 2022-04-19 | 湖北兴福电子材料有限公司 | 一种选择性蚀刻氮化钛及钨的蚀刻液 |
DE102022113998A1 (de) | 2022-06-02 | 2023-12-07 | Betek Gmbh & Co. Kg | Entschichtungslösung, Verfahren und Vorrichtung zum nasschemischen Entfernen einer PVD- oder CVD-Titannitrid-Schicht von einem Hartmetall-Trägerelement |
CN115011347B (zh) * | 2022-06-30 | 2023-12-29 | 湖北兴福电子材料股份有限公司 | 一种氮化铝和钨的选择性蚀刻液 |
CN115161642B (zh) * | 2022-08-11 | 2023-10-27 | 常州百事瑞机电设备有限公司 | 一种高比重钨基合金蚀刻剂及其配制和使用方法 |
CN115353886B (zh) * | 2022-08-31 | 2023-08-25 | 湖北兴福电子材料股份有限公司 | 一种磷酸基蚀刻液及其配制方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021516A (ja) * | 2007-07-13 | 2009-01-29 | Tokyo Ohka Kogyo Co Ltd | 窒化チタン剥離液、及び窒化チタン被膜の剥離方法 |
JP2010524208A (ja) * | 2007-03-31 | 2010-07-15 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | ウエハ再生のために材料を剥離する方法 |
KR20130049507A (ko) * | 2011-11-04 | 2013-05-14 | 동우 화인켐 주식회사 | 질화 티탄막 식각액 조성물 및 이를 이용한 질화 티탄막의 식각방법 |
KR20130049503A (ko) * | 2011-11-04 | 2013-05-14 | 동우 화인켐 주식회사 | 텅스텐막 식각액 조성물 및 이를 이용한 텅스텐막의 식각방법 |
JP2015506583A (ja) * | 2011-12-28 | 2015-03-02 | インテグリス,インコーポレイテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
KR20150050278A (ko) * | 2013-10-31 | 2015-05-08 | 솔브레인 주식회사 | 질화티타늄막 및 텅스텐막의 적층체용 식각 조성물, 이를 이용한 식각 방법 및 이로부터 제조된 반도체 소자 |
US20160340581A1 (en) * | 2014-11-24 | 2016-11-24 | Boe Technology Group Co., Ltd. | Etching solution |
JP2016536785A (ja) * | 2013-10-11 | 2016-11-24 | イー.ケー.シー.テクノロジー.インコーポレーテッド | ハードマスクを選択的に除去するための除去組成物 |
JP2018006715A (ja) * | 2016-07-08 | 2018-01-11 | 関東化學株式会社 | エッチング液組成物およびエッチング方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6306775B1 (en) | 2000-06-21 | 2001-10-23 | Micron Technology, Inc. | Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG |
SG129274A1 (en) | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
JP2004315887A (ja) | 2003-04-16 | 2004-11-11 | Nagase Chemtex Corp | エッチング液組成物 |
US7846989B2 (en) * | 2005-02-25 | 2010-12-07 | John A. Kanca | Dental gel etchants |
US20090120457A1 (en) * | 2007-11-09 | 2009-05-14 | Surface Chemistry Discoveries, Inc. | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices |
US20100105595A1 (en) * | 2008-10-29 | 2010-04-29 | Wai Mun Lee | Composition comprising chelating agents containing amidoxime compounds |
JP5508130B2 (ja) * | 2010-05-14 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、半導体装置の製造方法及び洗浄方法 |
US20130045908A1 (en) | 2011-08-15 | 2013-02-21 | Hua Cui | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
KR101953215B1 (ko) * | 2012-10-05 | 2019-03-04 | 삼성디스플레이 주식회사 | 식각 조성물, 금속 배선 및 표시 기판의 제조방법 |
JP6063206B2 (ja) * | 2012-10-22 | 2017-01-18 | 富士フイルム株式会社 | エッチング液、これを用いたエッチング方法及び半導体素子の製造方法 |
JP6017273B2 (ja) * | 2012-11-14 | 2016-10-26 | 富士フイルム株式会社 | 半導体基板のエッチング方法及び半導体素子の製造方法 |
KR102294726B1 (ko) * | 2013-03-04 | 2021-08-30 | 엔테그리스, 아이엔씨. | 티타늄 나이트라이드를 선택적으로 에칭하기 위한 조성물 및 방법 |
JP6110814B2 (ja) | 2013-06-04 | 2017-04-05 | 富士フイルム株式会社 | エッチング液およびそのキット、これらを用いたエッチング方法、半導体基板製品の製造方法および半導体素子の製造方法 |
EP3004287B1 (en) * | 2013-06-06 | 2021-08-18 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
TWI683889B (zh) | 2013-07-31 | 2020-02-01 | 美商恩特葛瑞斯股份有限公司 | 用於移除金屬硬遮罩及蝕刻後殘餘物之具有Cu/W相容性的水性配方 |
SG11201601158VA (en) * | 2013-08-30 | 2016-03-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
KR102190370B1 (ko) * | 2014-01-10 | 2020-12-11 | 삼성전자주식회사 | 도전 패턴의 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
TWI642763B (zh) * | 2014-01-27 | 2018-12-01 | 三菱瓦斯化學股份有限公司 | 氮化鈦除去用液體組成物、利用該液體組成物之半導體元件之洗滌方法、及半導體元件之製造方法 |
SG11201607700QA (en) * | 2014-03-18 | 2016-10-28 | Fujifilm Electronic Materials | Etching composition |
US9222018B1 (en) | 2014-07-24 | 2015-12-29 | Air Products And Chemicals, Inc. | Titanium nitride hard mask and etch residue removal |
US10301580B2 (en) * | 2014-12-30 | 2019-05-28 | Versum Materials Us, Llc | Stripping compositions having high WN/W etching selectivity |
US10332784B2 (en) | 2015-03-31 | 2019-06-25 | Versum Materials Us, Llc | Selectively removing titanium nitride hard mask and etch residue removal |
US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
CN109642159B (zh) | 2016-03-24 | 2022-02-15 | 安万托特性材料有限公司 | 非水性钨相容性金属氮化物选择性蚀刻剂和清洁剂 |
KR102344034B1 (ko) | 2016-03-31 | 2021-12-28 | 동우 화인켐 주식회사 | 은 또는 은합금을 포함하는 단일막 또는 다층막의 습식 식각 방법, 및 은 또는 은합금을 포함하는 단일막 또는 다층막의 식각액 조성물, 및 박막트렌지스터의 제조방법 및 박막트랜지스터 |
CN107731735B (zh) | 2017-11-21 | 2020-02-14 | 长江存储科技有限责任公司 | 一种通过温和湿法刻蚀改善seg生长形态的seg制备工艺 |
-
2019
- 2019-03-11 US US16/297,957 patent/US11499236B2/en active Active
- 2019-03-15 EP EP19163162.1A patent/EP3540764B1/en active Active
- 2019-03-15 TW TW108108805A patent/TWI706026B/zh active
- 2019-03-15 SG SG10201902327V patent/SG10201902327VA/en unknown
- 2019-03-17 IL IL265399A patent/IL265399B2/en unknown
- 2019-03-18 CN CN201910203116.8A patent/CN110272742A/zh active Pending
- 2019-03-18 KR KR1020190030692A patent/KR102324018B1/ko active IP Right Grant
- 2019-03-18 JP JP2019049324A patent/JP7126973B2/ja active Active
-
2021
- 2021-09-14 JP JP2021149467A patent/JP2022002324A/ja not_active Withdrawn
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010524208A (ja) * | 2007-03-31 | 2010-07-15 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | ウエハ再生のために材料を剥離する方法 |
JP2009021516A (ja) * | 2007-07-13 | 2009-01-29 | Tokyo Ohka Kogyo Co Ltd | 窒化チタン剥離液、及び窒化チタン被膜の剥離方法 |
KR20130049507A (ko) * | 2011-11-04 | 2013-05-14 | 동우 화인켐 주식회사 | 질화 티탄막 식각액 조성물 및 이를 이용한 질화 티탄막의 식각방법 |
KR20130049503A (ko) * | 2011-11-04 | 2013-05-14 | 동우 화인켐 주식회사 | 텅스텐막 식각액 조성물 및 이를 이용한 텅스텐막의 식각방법 |
JP2015506583A (ja) * | 2011-12-28 | 2015-03-02 | インテグリス,インコーポレイテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
JP2016536785A (ja) * | 2013-10-11 | 2016-11-24 | イー.ケー.シー.テクノロジー.インコーポレーテッド | ハードマスクを選択的に除去するための除去組成物 |
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JP2018006715A (ja) * | 2016-07-08 | 2018-01-11 | 関東化學株式会社 | エッチング液組成物およびエッチング方法 |
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WO2024053647A1 (ja) * | 2022-09-06 | 2024-03-14 | 花王株式会社 | 基板処理方法 |
JP7466045B2 (ja) | 2022-09-06 | 2024-04-11 | 花王株式会社 | 基板処理方法 |
WO2024062877A1 (ja) * | 2022-09-21 | 2024-03-28 | 富士フイルム株式会社 | 薬液、処理方法 |
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JP7126973B2 (ja) | 2022-08-29 |
SG10201902327VA (en) | 2019-10-30 |
US11499236B2 (en) | 2022-11-15 |
KR20190109317A (ko) | 2019-09-25 |
TWI706026B (zh) | 2020-10-01 |
KR102324018B1 (ko) | 2021-11-09 |
EP3540764B1 (en) | 2024-05-22 |
EP3540764A1 (en) | 2019-09-18 |
TW201938768A (zh) | 2019-10-01 |
IL265399A (en) | 2019-05-30 |
US20190284704A1 (en) | 2019-09-19 |
IL265399B2 (en) | 2024-01-01 |
JP2022002324A (ja) | 2022-01-06 |
IL265399B1 (en) | 2023-09-01 |
CN110272742A (zh) | 2019-09-24 |
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