SG10201902327VA - Etching solution for tungsten word line recess - Google Patents

Etching solution for tungsten word line recess

Info

Publication number
SG10201902327VA
SG10201902327VA SG10201902327VA SG10201902327VA SG 10201902327V A SG10201902327V A SG 10201902327VA SG 10201902327V A SG10201902327V A SG 10201902327VA SG 10201902327V A SG10201902327V A SG 10201902327VA
Authority
SG
Singapore
Prior art keywords
etching solution
word line
line recess
tungsten
tungsten word
Prior art date
Application number
Inventor
Kuei Ge Jhih
Lee Yi-Chia
Dar Liu Wen
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201902327VA publication Critical patent/SG10201902327VA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/12—Oxygen-containing compounds
    • C23F11/122—Alcohols; Aldehydes; Ketones
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/12—Oxygen-containing compounds
    • C23F11/124—Carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

OF THE DISCLOSURE ETCHING SOLUTION FOR TUNGSTEN WORD LINE RECESS Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors and one or more surfactants. [no figure] --
SG10201902327V 2018-03-16 2019-03-15 Etching solution for tungsten word line recess SG10201902327VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862644131P 2018-03-16 2018-03-16
US201862655856P 2018-04-11 2018-04-11
US16/297,957 US11499236B2 (en) 2018-03-16 2019-03-11 Etching solution for tungsten word line recess

Publications (1)

Publication Number Publication Date
SG10201902327VA true SG10201902327VA (en) 2019-10-30

Family

ID=65861223

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201902327V SG10201902327VA (en) 2018-03-16 2019-03-15 Etching solution for tungsten word line recess

Country Status (8)

Country Link
US (1) US11499236B2 (en)
EP (1) EP3540764B1 (en)
JP (2) JP7126973B2 (en)
KR (1) KR102324018B1 (en)
CN (1) CN110272742A (en)
IL (1) IL265399B2 (en)
SG (1) SG10201902327VA (en)
TW (1) TWI706026B (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10870799B2 (en) * 2017-08-25 2020-12-22 Versum Materials Us, Llc Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device
US10879076B2 (en) * 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
KR20210111289A (en) * 2019-01-11 2021-09-10 버슘머트리얼즈 유에스, 엘엘씨 Hafnium oxide corrosion inhibitor
CN114072488A (en) * 2019-05-01 2022-02-18 富士胶片电子材料美国有限公司 Etching composition
US11851772B2 (en) * 2019-05-14 2023-12-26 Tech Met, Inc. Composition and method for creating nanoscale surface geometry on an implantable device
EP3983500A4 (en) * 2019-06-13 2022-11-02 FUJIFILM Electronic Materials U.S.A, Inc. Etching compositions
US11421157B2 (en) * 2019-08-21 2022-08-23 Entegris, Inc. Formulations for high selective silicon nitride etch
US20210104411A1 (en) * 2019-10-04 2021-04-08 Tokyo Ohka Kogyo Co., Ltd. Etching solution, and method of producing semiconductor device
KR20210045838A (en) * 2019-10-17 2021-04-27 삼성전자주식회사 Etchant composition for metal-containing layer and method of manufacturing integrated circuit device using the etchant composition
JP2022553203A (en) * 2019-10-17 2022-12-22 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー Etch compositions and methods for EUV mask protection structures
CN110885979B (en) * 2019-12-13 2021-12-03 湖北兴福电子材料有限公司 Slow-release silicon spot etching agent
KR20210084018A (en) * 2019-12-27 2021-07-07 삼성전자주식회사 Etchant composition and method of manufacturing integrated circuit device using the same
CN113853669A (en) * 2020-01-30 2021-12-28 昭和电工株式会社 Method for removing metal compound
WO2021178347A1 (en) * 2020-03-04 2021-09-10 Versum Materials Us, Llc Etching solution for titanium nitride and molybdenum conductive metal lines
CN113496887B (en) * 2020-04-03 2023-06-02 重庆超硅半导体有限公司 Uniform etching method of silicon wafer for integrated circuit
TW202212012A (en) * 2020-06-15 2022-04-01 美商蘭姆研究公司 Removal of tin oxide in chamber cleaning
TW202212540A (en) * 2020-08-13 2022-04-01 美商恩特葛瑞斯股份有限公司 Nitride etchant composition and method
CN112501615B (en) * 2020-11-30 2023-03-24 南通麦特隆新材料科技有限公司 Deplating solution for electroplated layer of external lead of integrated circuit and preparation method thereof
CN116761869A (en) * 2020-12-29 2023-09-15 恩特格里斯公司 Selective removal of metal oxide hard mask
KR20220119860A (en) * 2021-02-22 2022-08-30 삼성전자주식회사 Etching composition and method for fabricating semiconductor device by using the same
CN114959712B (en) * 2021-02-25 2024-02-23 中国石油化工股份有限公司 Vapor phase corrosion inhibitor and preparation method thereof
KR20220126436A (en) * 2021-03-09 2022-09-16 주식회사 이엔에프테크놀로지 Etchant composition for display substrate
WO2022190448A1 (en) * 2021-03-10 2022-09-15 花王株式会社 Etchant composition
JP2022147744A (en) * 2021-03-23 2022-10-06 キオクシア株式会社 Chemical solution, etching method, and manufacturing method of semiconductor device
CN113604803B (en) * 2021-07-07 2023-04-25 湖北兴福电子材料股份有限公司 Etching solution for selectively etching tungsten and titanium nitride
CN114350365A (en) * 2021-12-07 2022-04-15 湖北兴福电子材料有限公司 Etching solution for stably etching titanium nitride
CN114369462A (en) * 2021-12-16 2022-04-19 湖北兴福电子材料有限公司 Etching solution for selectively etching titanium nitride and tungsten
DE102022113998A1 (en) 2022-06-02 2023-12-07 Betek Gmbh & Co. Kg Decoating solution, method and device for the wet-chemical removal of a PVD or CVD titanium nitride layer from a hard metal carrier element
CN115011347B (en) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 Selective etching solution for aluminum nitride and tungsten
CN115161642B (en) * 2022-08-11 2023-10-27 常州百事瑞机电设备有限公司 High specific gravity tungsten-based alloy etchant and preparation and use methods thereof
CN115353886B (en) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 Phosphate-based etching solution and preparation method thereof
WO2024053647A1 (en) * 2022-09-06 2024-03-14 花王株式会社 Substrate processing method
WO2024062877A1 (en) * 2022-09-21 2024-03-28 富士フイルム株式会社 Chemical liquid and processing method
CN117884452A (en) * 2024-03-15 2024-04-16 崇义章源钨业股份有限公司 Method for treating ammonia-containing tungsten-containing slag

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306775B1 (en) 2000-06-21 2001-10-23 Micron Technology, Inc. Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG
SG129274A1 (en) 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
JP2004315887A (en) 2003-04-16 2004-11-11 Nagase Chemtex Corp Etching liquid composition
US7846989B2 (en) * 2005-02-25 2010-12-07 John A. Kanca Dental gel etchants
TW200908148A (en) * 2007-03-31 2009-02-16 Advanced Tech Materials Methods for stripping material for wafer reclamation
JP5047712B2 (en) 2007-07-13 2012-10-10 東京応化工業株式会社 Titanium nitride stripping solution and method for stripping titanium nitride coating
US20090120457A1 (en) * 2007-11-09 2009-05-14 Surface Chemistry Discoveries, Inc. Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices
US20100105595A1 (en) * 2008-10-29 2010-04-29 Wai Mun Lee Composition comprising chelating agents containing amidoxime compounds
JP5508130B2 (en) * 2010-05-14 2014-05-28 富士フイルム株式会社 Cleaning composition, semiconductor device manufacturing method and cleaning method
US20130045908A1 (en) * 2011-08-15 2013-02-21 Hua Cui Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
KR20130049503A (en) 2011-11-04 2013-05-14 동우 화인켐 주식회사 Etching solution composition for a tungsten layer and method for etching the tungsten layer using the same
KR20130049507A (en) 2011-11-04 2013-05-14 동우 화인켐 주식회사 Etching solution composition for a titanium nitride layer and method for etching the titanium nitride layer using the same
JP6329909B2 (en) 2011-12-28 2018-05-23 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
KR101953215B1 (en) * 2012-10-05 2019-03-04 삼성디스플레이 주식회사 Etchant composition, metal wiring and method of manufacturing a display substrate
JP6063206B2 (en) * 2012-10-22 2017-01-18 富士フイルム株式会社 Etching solution, etching method using the same, and semiconductor device manufacturing method
JP6017273B2 (en) * 2012-11-14 2016-10-26 富士フイルム株式会社 Semiconductor substrate etching method and semiconductor device manufacturing method
KR102294726B1 (en) * 2013-03-04 2021-08-30 엔테그리스, 아이엔씨. Compositions and methods for selectively etching titanium nitride
JP6110814B2 (en) 2013-06-04 2017-04-05 富士フイルム株式会社 Etching solution and kit thereof, etching method using them, method for producing semiconductor substrate product, and method for producing semiconductor element
SG11201509933QA (en) * 2013-06-06 2016-01-28 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
CN112442374A (en) 2013-07-31 2021-03-05 恩特格里斯公司 Aqueous formulations with Cu/W compatibility for removal of metal hardmask and post-etch residues
WO2015031620A1 (en) * 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
US20150104952A1 (en) 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
KR102161019B1 (en) 2013-10-31 2020-09-29 솔브레인 주식회사 Composition for etching titanium nitrate layer-tungsten layer containing laminate, method for etching using the same and semiconductor device manufactured by using the same
KR102190370B1 (en) * 2014-01-10 2020-12-11 삼성전자주식회사 Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same
TWI642763B (en) * 2014-01-27 2018-12-01 三菱瓦斯化學股份有限公司 Liquid composition for removing titanium nitride, method for washing semiconductor element using the liquid composition, and method for manufacturing semiconductor element
TWI659088B (en) * 2014-03-18 2019-05-11 Fujifilm Electronic Materials U. S. A., Inc. Etching composition
US9222018B1 (en) * 2014-07-24 2015-12-29 Air Products And Chemicals, Inc. Titanium nitride hard mask and etch residue removal
CN104445971B (en) 2014-11-24 2017-02-01 京东方科技集团股份有限公司 Etching solution
US10301580B2 (en) * 2014-12-30 2019-05-28 Versum Materials Us, Llc Stripping compositions having high WN/W etching selectivity
US10332784B2 (en) * 2015-03-31 2019-06-25 Versum Materials Us, Llc Selectively removing titanium nitride hard mask and etch residue removal
US9976111B2 (en) * 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
KR102173490B1 (en) 2016-03-24 2020-11-05 아반토르 퍼포먼스 머티리얼스, 엘엘씨 Non-aqueous tungsten compatible metal nitride selective etchant and cleaner
KR102344034B1 (en) 2016-03-31 2021-12-28 동우 화인켐 주식회사 Wet etching method for a single layer or multiple layer comprising Ag or Ag alloy, and etchant composition for a single layer or multiple layer comprising Ag or Ag alloy, and method for manufacturing a thin film transistor and a thin film transistor
JP6769760B2 (en) 2016-07-08 2020-10-14 関東化学株式会社 Etching liquid composition and etching method
CN107731735B (en) 2017-11-21 2020-02-14 长江存储科技有限责任公司 SEG preparation process for improving SEG growth form through mild wet etching

Also Published As

Publication number Publication date
US20190284704A1 (en) 2019-09-19
EP3540764A1 (en) 2019-09-18
KR20190109317A (en) 2019-09-25
TW201938768A (en) 2019-10-01
JP2019165225A (en) 2019-09-26
JP7126973B2 (en) 2022-08-29
JP2022002324A (en) 2022-01-06
KR102324018B1 (en) 2021-11-09
IL265399B2 (en) 2024-01-01
IL265399B1 (en) 2023-09-01
IL265399A (en) 2019-05-30
EP3540764B1 (en) 2024-05-22
CN110272742A (en) 2019-09-24
US11499236B2 (en) 2022-11-15
TWI706026B (en) 2020-10-01

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