SG10201800568XA - Etching solution for tungsten and gst films - Google Patents

Etching solution for tungsten and gst films

Info

Publication number
SG10201800568XA
SG10201800568XA SG10201800568XA SG10201800568XA SG10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA
Authority
SG
Singapore
Prior art keywords
etching solution
tungsten
gst
optionally
water
Prior art date
Application number
SG10201800568XA
Inventor
Dar Wen Liu
Laisheng Sun
Yi-Chia Lee
Tianniu Chen
Chris Han-Adebekun Gang
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201800568XA publication Critical patent/SG10201800568XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)

Abstract

OF THE DISCLOSURE ETCHING SOLUTION FOR TUNGSTEN AND GST FILMS Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.
SG10201800568XA 2017-01-23 2018-01-22 Etching solution for tungsten and gst films SG10201800568XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762449290P 2017-01-23 2017-01-23
US15/872,620 US11035044B2 (en) 2017-01-23 2018-01-16 Etching solution for tungsten and GST films

Publications (1)

Publication Number Publication Date
SG10201800568XA true SG10201800568XA (en) 2018-08-30

Family

ID=61192641

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201800568XA SG10201800568XA (en) 2017-01-23 2018-01-22 Etching solution for tungsten and gst films

Country Status (7)

Country Link
US (1) US11035044B2 (en)
EP (1) EP3351658B1 (en)
JP (1) JP6717862B2 (en)
KR (1) KR102219829B1 (en)
CN (1) CN108342735B (en)
SG (1) SG10201800568XA (en)
TW (1) TWI674339B (en)

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US11211543B2 (en) 2019-12-05 2021-12-28 Microsoft Technology Licensing, Llc Semiconductor-superconductor hybrid device and its fabrication
US20230008150A1 (en) * 2019-12-05 2023-01-12 Microsoft Technology Licensing, Llc Method of selectively etching a metal component
CN112522707B (en) * 2020-11-20 2021-12-03 湖北兴福电子材料有限公司 Tungsten etching solution with high selectivity ratio
CN114854419B (en) * 2022-04-13 2023-09-05 华中科技大学 Alkaline etching solution for wet etching of phase-change material and application thereof

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Also Published As

Publication number Publication date
TW201827648A (en) 2018-08-01
KR102219829B1 (en) 2021-02-24
US11035044B2 (en) 2021-06-15
EP3351658B1 (en) 2022-02-09
US20180209049A1 (en) 2018-07-26
JP2018121056A (en) 2018-08-02
JP6717862B2 (en) 2020-07-08
CN108342735B (en) 2020-08-18
CN108342735A (en) 2018-07-31
KR20180087186A (en) 2018-08-01
TWI674339B (en) 2019-10-11
EP3351658A1 (en) 2018-07-25

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