SG10201907142VA - Etching composition - Google Patents
Etching compositionInfo
- Publication number
- SG10201907142VA SG10201907142VA SG10201907142VA SG10201907142VA SG10201907142VA SG 10201907142V A SG10201907142V A SG 10201907142VA SG 10201907142V A SG10201907142V A SG 10201907142VA SG 10201907142V A SG10201907142V A SG 10201907142VA SG 10201907142V A SG10201907142V A SG 10201907142VA
- Authority
- SG
- Singapore
- Prior art keywords
- etching composition
- etching
- none
- organic solvent
- disclosure relates
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Abstract
ETCHING COMPOSITION This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one metal corrosion inhibitor; 4) at least one organic solvent; 5) at least one amidine base; and 6) water. Figure: None
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461954698P | 2014-03-18 | 2014-03-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201907142VA true SG10201907142VA (en) | 2019-09-27 |
Family
ID=54141496
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201907142VA SG10201907142VA (en) | 2014-03-18 | 2015-03-17 | Etching composition |
SG11201607700QA SG11201607700QA (en) | 2014-03-18 | 2015-03-17 | Etching composition |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607700QA SG11201607700QA (en) | 2014-03-18 | 2015-03-17 | Etching composition |
Country Status (9)
Country | Link |
---|---|
US (2) | US10490417B2 (en) |
EP (1) | EP3119924A4 (en) |
JP (1) | JP6550123B2 (en) |
KR (1) | KR102330127B1 (en) |
CN (2) | CN115044375A (en) |
IL (1) | IL247843B (en) |
SG (2) | SG10201907142VA (en) |
TW (1) | TWI659088B (en) |
WO (1) | WO2015142778A1 (en) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10490417B2 (en) * | 2014-03-18 | 2019-11-26 | Fujifilm Electronic Materials U.S.A., Inc. | Etching composition |
MX2018009954A (en) | 2016-02-18 | 2018-11-29 | Ecolab Usa Inc | Solvent application in bottle wash using amidine based formulas. |
SG11201807521WA (en) | 2016-03-11 | 2018-09-27 | Fujifilm Planar Solutions Llc | Advanced fluid processing methods and systems |
WO2017208767A1 (en) * | 2016-06-03 | 2017-12-07 | 富士フイルム株式会社 | Treatment liquid, substrate cleaning method and method for removing resist |
KR20180060489A (en) * | 2016-11-29 | 2018-06-07 | 삼성전자주식회사 | Etching composition and method for fabricating semiconductor device by using the same |
KR20180068591A (en) * | 2016-12-14 | 2018-06-22 | 삼성전자주식회사 | Etching composition and method for fabricating semiconductor device by using the same |
KR102373108B1 (en) * | 2017-03-16 | 2022-03-10 | 동우 화인켐 주식회사 | Etching composition for conductive layer and manufacturing semiconductor device using the same |
CN107359108A (en) * | 2017-07-27 | 2017-11-17 | 成都海威华芯科技有限公司 | A kind of semiconductor crystal wafer cleaning method |
KR102492733B1 (en) | 2017-09-29 | 2023-01-27 | 삼성디스플레이 주식회사 | Copper plasma etching method and manufacturing method of display panel |
US10889757B2 (en) | 2017-10-19 | 2021-01-12 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
CN107814494A (en) * | 2017-12-13 | 2018-03-20 | 天津宝兴威科技股份有限公司 | A kind of gold-tinted processing procedure etching formula of liquid |
US10934484B2 (en) * | 2018-03-09 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device |
US11499236B2 (en) * | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
US11111435B2 (en) * | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
CN115651656A (en) | 2018-12-03 | 2023-01-31 | 富士胶片电子材料美国有限公司 | Etching composition |
CN109666945A (en) * | 2018-12-25 | 2019-04-23 | 广东富行洗涤剂科技有限公司 | A kind of alkaline decoating liquid and obstacles in quit containing silicon cladding |
SG11202108330UA (en) * | 2019-01-31 | 2021-08-30 | Fujifilm Electronic Materials Usa Inc | Etching compositions |
SG11202111994PA (en) | 2019-05-01 | 2021-11-29 | Fujifilm Electronic Materials U S A Inc | Etching compositions |
WO2020251800A1 (en) * | 2019-06-13 | 2020-12-17 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
JPWO2021005980A1 (en) * | 2019-07-05 | 2021-01-14 | ||
US11499099B2 (en) | 2019-09-10 | 2022-11-15 | Fujifilm Electronic Materials U.S.A., Inc. | Etching composition |
TW202124776A (en) * | 2019-12-20 | 2021-07-01 | 美商慧盛材料美國有限責任公司 | Co/cu selective wet etchant |
JP7449127B2 (en) * | 2020-03-11 | 2024-03-13 | 株式会社Screenホールディングス | Substrate processing liquid, substrate processing method, and substrate processing equipment |
CN111792853B (en) * | 2020-07-22 | 2022-09-27 | 醴陵旗滨电子玻璃有限公司 | Glass processing method and ultrathin flexible glass |
US11476124B2 (en) * | 2021-01-05 | 2022-10-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure |
US11728185B2 (en) | 2021-01-05 | 2023-08-15 | Applied Materials, Inc. | Steam-assisted single substrate cleaning process and apparatus |
CN113589662B (en) * | 2021-07-30 | 2022-07-12 | 浙江奥首材料科技有限公司 | Composition, stripping liquid, application of stripping liquid in stripping of photoresist or photoresist residues and stripping method |
TW202342700A (en) * | 2022-04-20 | 2023-11-01 | 日商東京應化工業股份有限公司 | Etching composition, etching method using the same and method for manufacturing electronic parts containing at least one of alkali compounds, organic solvents, water, chelating agents and surfactants |
CN114989331B (en) * | 2022-04-20 | 2024-02-02 | 万华化学集团股份有限公司 | Polyolefin solution chelating deashing method |
CN115678439B (en) * | 2022-10-31 | 2024-04-23 | 上海应用技术大学 | Alkaline polishing solution for inhibiting copper-cobalt galvanic corrosion and preparation method thereof |
Family Cites Families (25)
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US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
US6099604A (en) * | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
US6717019B2 (en) | 2002-01-30 | 2004-04-06 | Air Products And Chemicals, Inc. | Glycidyl ether-capped acetylenic diol ethoxylate surfactants |
US20050056810A1 (en) * | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
TWI339780B (en) | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
TW200722505A (en) * | 2005-09-30 | 2007-06-16 | Rohm & Haas Elect Mat | Stripper |
WO2007044446A1 (en) | 2005-10-05 | 2007-04-19 | Advanced Technology Materials, Inc. | Oxidizing aqueous cleaner for the removal of post-etch residues |
US20090301996A1 (en) * | 2005-11-08 | 2009-12-10 | Advanced Technology Materials, Inc. | Formulations for removing cooper-containing post-etch residue from microelectronic devices |
US20070131899A1 (en) * | 2005-12-13 | 2007-06-14 | Jinru Bian | Composition for polishing semiconductor layers |
ITMI20060258A1 (en) * | 2006-02-13 | 2007-08-14 | Abiogen Pharma Spa | PROCEDURE FOR THE PREPARATION OF 2-4 HYDROXY-3-MORPHOLIN-2-CYCLOHEXENONE |
US20070298611A1 (en) * | 2006-06-27 | 2007-12-27 | Jinru Bian | Selective barrier slurry for chemical mechanical polishing |
JP2008133529A (en) * | 2006-08-29 | 2008-06-12 | Rohm & Haas Electronic Materials Llc | Stripping method |
US8623236B2 (en) | 2007-07-13 | 2014-01-07 | Tokyo Ohka Kogyo Co., Ltd. | Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film |
WO2010104816A1 (en) * | 2009-03-11 | 2010-09-16 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
US9045717B2 (en) * | 2010-01-29 | 2015-06-02 | Advanced Technology Materials, Inc. | Cleaning agent for semiconductor provided with metal wiring |
US20110318928A1 (en) * | 2010-06-24 | 2011-12-29 | Jinru Bian | Polymeric Barrier Removal Polishing Slurry |
TWI598434B (en) * | 2010-09-08 | 2017-09-11 | 巴斯夫歐洲公司 | Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts |
KR101827031B1 (en) | 2010-10-06 | 2018-02-07 | 엔테그리스, 아이엔씨. | Composition and process for selectively etching metal nitrides |
WO2013101907A1 (en) | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
US9070625B2 (en) | 2012-01-04 | 2015-06-30 | International Business Machines Corporation | Selective etch chemistry for gate electrode materials |
CN109969007A (en) | 2012-10-19 | 2019-07-05 | 韦特里西提公司 | External analyte detection in wireless energy transfer system |
WO2015060954A1 (en) | 2013-10-21 | 2015-04-30 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulations for removing residues on surfaces |
US10490417B2 (en) * | 2014-03-18 | 2019-11-26 | Fujifilm Electronic Materials U.S.A., Inc. | Etching composition |
-
2015
- 2015-03-17 US US14/659,663 patent/US10490417B2/en active Active
- 2015-03-17 KR KR1020167028792A patent/KR102330127B1/en active IP Right Grant
- 2015-03-17 EP EP15765751.1A patent/EP3119924A4/en active Pending
- 2015-03-17 SG SG10201907142VA patent/SG10201907142VA/en unknown
- 2015-03-17 JP JP2017501072A patent/JP6550123B2/en active Active
- 2015-03-17 CN CN202210464158.9A patent/CN115044375A/en active Pending
- 2015-03-17 CN CN201580017552.6A patent/CN106460196A/en active Pending
- 2015-03-17 SG SG11201607700QA patent/SG11201607700QA/en unknown
- 2015-03-17 TW TW104108477A patent/TWI659088B/en active
- 2015-03-17 WO PCT/US2015/020863 patent/WO2015142778A1/en active Application Filing
-
2016
- 2016-09-15 IL IL247843A patent/IL247843B/en active IP Right Grant
-
2019
- 2019-09-25 US US16/582,254 patent/US20200020545A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
IL247843B (en) | 2020-07-30 |
TW201542772A (en) | 2015-11-16 |
US20200020545A1 (en) | 2020-01-16 |
WO2015142778A1 (en) | 2015-09-24 |
EP3119924A4 (en) | 2017-11-29 |
EP3119924A1 (en) | 2017-01-25 |
US10490417B2 (en) | 2019-11-26 |
JP2017513238A (en) | 2017-05-25 |
IL247843A0 (en) | 2016-11-30 |
US20150267112A1 (en) | 2015-09-24 |
TWI659088B (en) | 2019-05-11 |
CN106460196A (en) | 2017-02-22 |
SG11201607700QA (en) | 2016-10-28 |
CN115044375A (en) | 2022-09-13 |
JP6550123B2 (en) | 2019-07-24 |
KR102330127B1 (en) | 2021-11-23 |
KR20160133550A (en) | 2016-11-22 |
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