CN107359108A - A kind of semiconductor crystal wafer cleaning method - Google Patents
A kind of semiconductor crystal wafer cleaning method Download PDFInfo
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- CN107359108A CN107359108A CN201710623300.9A CN201710623300A CN107359108A CN 107359108 A CN107359108 A CN 107359108A CN 201710623300 A CN201710623300 A CN 201710623300A CN 107359108 A CN107359108 A CN 107359108A
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- wafer
- cleaning
- semiconductor crystal
- cleaning method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Abstract
The present invention relates to semiconductor fabrication techniques field, and in particular to a kind of semiconductor crystal wafer cleaning method, comprises the following steps：S1, using band O2Plasma bombardment crystal column surface；S2, NMP cleaning wafers surface is used within the first stipulated time after completing step S1, remove the NMP remained on wafer using IPA solution afterwards, finally dried up or be spin-dried for stand-by using deionized water cleaning wafer surface, wafer；S3, weak ammonia cleaning wafer surface is used within the second stipulated time after completing step S2, dry up or be spin-dried for stand-by using deionized water cleaning wafer surface, wafer afterwards；S4, DHF solution cleaning wafers surface is used within the 3rd stipulated time after completing step S3, dry up or be spin-dried for stand-by using deionized water cleaning wafer surface, wafer afterwards；Band O is utilized within the 4th stipulated time after completing step S42Plasma bombardment crystal column surface, within 20min using the wafer carry out subsequent technique.Safe operation of the present invention, cost are low.
Description
Technical field
The invention belongs to semiconductor fabrication techniques field, and in particular to a kind of semiconductor crystal wafer cleaning method.
Background technology
21st century, society have marched toward the information age of super-speed development, and geometry multiple is presented in global metadata business
Explosive growth, the demand of network bandwidth and speed is skyrocketed through, causes semiconductor chip integrated level more and more higher, function to be got over
Come that more, line width is less and less.Therefore, in the manufacturing process of semiconductor chip, cleaning, clean crystal column surface are to semiconductor
Element manufacturing is more and more important.Such as：The pollutants such as the surface resultant of preceding road technique, particle, organic contaminations, will cause
Device occurs surface undulation in wet processing, and the characteristics such as device breakdown will be influenceed when serious；The optical cement of preceding road technique, is being removed
During, it is difficult the cull found that naked eyes can be left in bottom, follow-up such as techniques such as metal deposit, wet etchings so as to influence
Progress and reliability.
Traditional Si wafer cleaning mode general flows are：
Strong acid+strong oxidizer：Such as the concentrated sulfuric acid+hydrogen peroxide, surface organic matter is removed；
Ammoniacal liquor+hydrogen peroxide：Remove surface metal ion micronic dust；
Dilute hydrofluoric acid：Remove oxide on surface；
Due to strong acid+strong oxidizer that first of technique uses, operational danger is higher, typically using special automatic machine
Platform, cost is higher, is unfavorable for experiment and uses.
The content of the invention
It is an object of the invention to provide a kind of semiconductor crystal wafer cleaning method safe, cost is low.
To reach above-mentioned requirements, the present invention adopts the technical scheme that：A kind of semiconductor crystal wafer cleaning method is provided, including
Following steps：
S1, using band O2Plasma bombardment crystal column surface；
S2, NMP cleaning wafers surface is used within the first stipulated time after completing step S1, afterwards using IPA solution
The NMP remained on wafer is removed, finally dries up or is spin-dried for stand-by using deionized water cleaning wafer surface, wafer；
S3, weak ammonia cleaning wafer surface is used within the second stipulated time after completing step S2, use go afterwards
Ionized water cleaning wafer surface, wafer are dried up or are spin-dried for stand-by；
S4, DHF solution cleaning wafers surface is used within the 3rd stipulated time after completing step S3, afterwards using go from
Sub- water cleaning wafer surface, wafer are dried up or are spin-dried for stand-by；
S5, band O is utilized within the 4th stipulated time after completing step S42Plasma bombardment crystal column surface,
Within 20min subsequent technique is carried out using the wafer.
Compared with prior art, the present invention has advantages below：The first step uses band O2Plasma bombardment wafer table
Face, the residuals of the preceding road technique of crystal column surface are removed, then crystal column surface organic matter is removed using NMP, IPA solution purges
NMP is remained, and deionized water removes IPA residuals, then the grains of crystal column surface absorption are removed using weak ammonia, is finally utilized
DHF solution removes wafer surface oxidation thing, so as to obtain clean Si wafers；Processing safety is high, and cost is low.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding of the present application, the part of the application is formed, at this
Same or analogous part, the schematic description and description of the application are represented using identical reference number in a little accompanying drawings
For explaining the application, the improper restriction to the application is not formed.In the accompanying drawings：
Fig. 1 is the flow chart of the present invention.
Embodiment
To make the purpose, technical scheme and advantage of the application clearer, below in conjunction with drawings and the specific embodiments, to this
Application is described in further detail.For the sake of simplicity, eliminate that well known to a person skilled in the art some skills in describing below
Art feature.
As shown in figure 1, the present embodiment provides a kind of semiconductor crystal wafer cleaning method, comprise the following steps：
S1, using band O2Plasma bombardment crystal column surface, the plasma with O2 passes through Descum or Asher equipment
Produce；
S2, use NMP cleaning wafers surface in the 20min after completing step S1, room temperature during cleaning is 100 DEG C, clearly
It is 2min to wash the time；The NMP, scavenging period 2min remained on wafer is removed using IPA solution afterwards；Finally use deionized water
Cleaning wafer surface, wafer are dried up or are spin-dried for stand-by；
S3, weak ammonia cleaning wafer surface is used in the 20min after completing step S2, the concentration of weak ammonia is
5%, scavenging period 5min；Deionized water cleaning wafer surface is used afterwards, and wafer is dried up or is spin-dried for stand-by；
S4, use DHF solution cleaning wafers surface in the 20min after completing step S3, DHF solution is hydrofluoric acid, double
Oxygen water and deionized water mixing liquid, volumetric concentration >=10% of hydrofluoric acid, volumetric concentration >=10% of hydrogen peroxide, scavenging period
For 3min；Deionized water cleaning wafer surface is used afterwards, and wafer is dried up or is spin-dried for stand-by；
S5, after step S4 techniques, wafer surface oxidation layer part remove, in the 20min after completing step S4 profit
Use O2Plasma is bombarded again, helps further to improve crystal column surface metal adhesion, and after bombardment
20min within using the wafer carry out subsequent technique, there is more preferable effect.
Above example only represents the several embodiments of the present invention, and its description is more specific and detailed, but can not manage
Solve as limitation of the scope of the invention.It should be pointed out that for the person of ordinary skill of the art, this hair is not being departed from
On the premise of bright design, various modifications and improvements can be made, these belong to the scope of the present invention.Therefore the present invention
Protection domain should be defined by claim.
Claims (10)
1. a kind of semiconductor crystal wafer cleaning method, it is characterised in that comprise the following steps：
S1, using band O2Plasma bombardment crystal column surface；
S2, NMP cleaning wafers surface is used within the first stipulated time after completing step S1, removed afterwards using IPA solution
The NMP remained on wafer, finally dry up or be spin-dried for stand-by using deionized water cleaning wafer surface, wafer；
S3, weak ammonia cleaning wafer surface is used within the second stipulated time after completing step S2, afterwards using deionization
Water cleaning wafer surface, wafer are dried up or are spin-dried for stand-by；
S4, DHF solution cleaning wafers surface is used within the 3rd stipulated time after completing step S3, afterwards using deionized water
Cleaning wafer surface, wafer are dried up or are spin-dried for stand-by；
S5, band O is utilized within the 4th stipulated time after completing step S42Plasma bombardment crystal column surface, 20min with
It is interior to carry out subsequent technique using the wafer.
2. semiconductor crystal wafer cleaning method according to claim 1, it is characterised in that the first regulation in the step S2
Time is 20min.
3. semiconductor crystal wafer cleaning method according to claim 1 or 2, it is characterised in that NMP is used in the step S2
Room temperature during cleaning is 100 DEG C, and scavenging period is 0.5~3min.
4. semiconductor crystal wafer cleaning method according to claim 3, it is characterised in that molten using IPA in the step S2
0.5~3min of time of liquid cleaning.
5. semiconductor crystal wafer cleaning method according to claim 1, it is characterised in that the second regulation in the step S3
Time is 20min.
6. semiconductor crystal wafer cleaning method according to claim 1 or 5, it is characterised in that diluted ammonia in the step S3
Water concentration is 1%~10%.
7. semiconductor crystal wafer cleaning method according to claim 6, it is characterised in that weak ammonia in the step S3
Scavenging period is 0.5~10min.
8. semiconductor crystal wafer cleaning method according to claim 1, it is characterised in that the 3rd regulation in the step S4
Time is 20min, and the 4th stipulated time in the step S5 is 20min.
9. the semiconductor crystal wafer cleaning method according to claim 1 or 8, it is characterised in that DHF solution in the step S4
For hydrofluoric acid, hydrogen peroxide, deionized water mixing liquid, volumetric concentration >=10% of hydrofluoric acid, the volumetric concentration of hydrogen peroxide >=
10%.
10. semiconductor crystal wafer cleaning method according to claim 9, it is characterised in that DHF solution in the step S4
Scavenging period is 0.5~5min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710623300.9A CN107359108A (en) | 2017-07-27 | 2017-07-27 | A kind of semiconductor crystal wafer cleaning method |
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| CN201710623300.9A CN107359108A (en) | 2017-07-27 | 2017-07-27 | A kind of semiconductor crystal wafer cleaning method |
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| CN107359108A true CN107359108A (en) | 2017-11-17 |
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| CN201710623300.9A Pending CN107359108A (en) | 2017-07-27 | 2017-07-27 | A kind of semiconductor crystal wafer cleaning method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585268A (en) * | 2018-11-02 | 2019-04-05 | 山东天岳先进材料科技有限公司 | A kind of cleaning method of silicon carbide wafer |
| CN110620036A (en) * | 2019-10-22 | 2019-12-27 | 武汉新芯集成电路制造有限公司 | Wafer cleaning method |
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| CN106460196A (en) * | 2014-03-18 | 2017-02-22 | 富士胶片电子材料美国有限公司 | Etching composition |
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| CN101367083A (en) * | 2007-08-15 | 2009-02-18 | 庄添财 | Liquid crystal screen cleaning device |
| CN102569022A (en) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning method after tungsten chemical-mechanical polishing |
| CN105121040A (en) * | 2013-05-08 | 2015-12-02 | 东京毅力科创Fsi公司 | Process comprising water vapor for haze elimination and residue removal |
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| CN109585268A (en) * | 2018-11-02 | 2019-04-05 | 山东天岳先进材料科技有限公司 | A kind of cleaning method of silicon carbide wafer |
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| CN110620036A (en) * | 2019-10-22 | 2019-12-27 | 武汉新芯集成电路制造有限公司 | Wafer cleaning method |
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Application publication date: 20171117 |