CN109585268B - Method for cleaning silicon carbide wafer - Google Patents
Method for cleaning silicon carbide wafer Download PDFInfo
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- CN109585268B CN109585268B CN201811302593.1A CN201811302593A CN109585268B CN 109585268 B CN109585268 B CN 109585268B CN 201811302593 A CN201811302593 A CN 201811302593A CN 109585268 B CN109585268 B CN 109585268B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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Abstract
The application discloses a method for cleaning a silicon carbide wafer, and belongs to the field of semiconductor material preparation. The cleaning method of the silicon carbide wafer comprises the steps of plasma cleaning and wet cleaning. The cleaning method of the silicon carbide wafer enables the impurities on the surface of the silicon carbide wafer to be removed more cleanly; the pollution degree of impurities to the cleaning tank in the wet cleaning step can be reduced, and the replacement frequency of the cleaning solution is reduced; the plasma cleaning operation is simple, the environment is protected, the impurity removing efficiency is high, and the overall working efficiency can be improved.
Description
Technical Field
The application relates to a method for cleaning a silicon carbide wafer, belonging to the field of semiconductor material preparation.
Background
Silicon carbide, as one of the most important third-generation semiconductor materials, has excellent properties such as large forbidden bandwidth, high saturated electron mobility, strong breakdown field, high thermal conductivity and the like, and thus is widely used in the fields of power electronics, radio frequency devices, photoelectronic devices and the like. Since many organic and inorganic substances are required to participate in the processing of the SiC wafer, and many processes are required to be performed by human beings, the product is inevitably contaminated by impurities such as some organic substances, particles, metals, and oxides. In an integrated circuit made of silicon carbide, each element and a connecting line are very fine, so that if the integrated circuit is polluted by the impurities in the manufacturing process, the functions of the circuit in a chip are easily damaged, short circuit or open circuit is formed, the integrated circuit is failed, and serious loss is caused. Therefore, the silicon carbide substrate must be kept highly clean after the final processing.
At present, the RCA wet chemical cleaning technology is mostly used in the industry, and solutions related to the technology include a mixed solution of sulfuric acid and hydrogen peroxide (SPM for short), a mixed solution of ammonia water and hydrogen peroxide (APM for short), a mixed solution of hydrochloric acid and hydrogen peroxide (HPM for short), and a hydrofluoric acid solution (DHF for short), and different cleaning effects of products can be achieved by adjusting the proportion of cleaning liquid, cleaning temperature, cleaning time and other processes. In the prior art, the silicon carbide wafer cleaned by the method often has a small amount of particles which can not be removed, some particles can be removed by further cleaning, but the work efficiency is greatly reduced by repeated work, and some particles have large adhesive force and can not be removed by repeated cleaning. In addition, as the number of wafers to be cleaned increases, the cleaning tank is gradually contaminated, and metal and organic impurities are easily deposited in the tank to cause contamination, so that the cleaning method of the silicon carbide wafer has high cost, low efficiency and long time consumption.
Disclosure of Invention
In order to solve the above problems, the present application provides a cleaning method of a silicon carbide wafer. The cleaning method of the silicon carbide wafer comprises a plasma cleaning step, can remove partial substances which cannot be removed by wet cleaning, effectively improves the cleaning capacity of the surface of the silicon carbide wafer, can reduce the replacement frequency of cleaning liquid, reduces the pollution of chemicals to the environment, and has the advantages of high working efficiency, low cost and short time consumption.
The cleaning method of the silicon carbide wafer is characterized by comprising the steps of plasma cleaning and wet cleaning.
Optionally, the plasma gas in the plasma cleaning is selected from at least one of air, oxygen, nitrogen, argon, and hydrogen. Further, the plasma gas is air and hydrogen. Preferably, the plasma gas is hydrogen, and the hydrogen belongs to active gas, has strong chemical reaction activity, can chemically react with impurities on the surface of the wafer, and has a good cleaning effect.
Optionally, the plasma cleaning comprises a step of cleaning the carbon surface of the silicon carbide wafer and/or the silicon surface of the silicon carbide wafer. As an embodiment, the plasma cleaning includes: 1) horizontally placing the silicon carbide single crystal silicon face upwards in a tray, then placing the tray into a cavity of plasma equipment, and removing impurities such as organic matters, molecules or atoms of oxides and the like on the surface of the silicon carbide wafer by utilizing the activation effect of plasma; step 1) is then repeated on the carbon side of the silicon carbide wafer.
Optionally, the plasma cleaning step comprises placing the silicon carbide wafer in a plasma apparatus and cleaning the silicon carbide wafer with plasma gas for at least 1 min. Preferably, the time for cleaning the silicon carbide wafer is 1-15 min. More preferably, the time for cleaning the silicon carbide wafer is 8-15 min.
Optionally, the vacuum degree for cleaning the silicon carbide wafer is 1-150 Pa. Further, the vacuum degree for cleaning the silicon carbide wafer is 5-100 Pa. Preferably, the vacuum degree for cleaning the silicon carbide wafer is 80 Pa.
Optionally, the power of the plasma equipment for cleaning the silicon carbide wafer is 200-1000W, and the gas flow of the plasma equipment is at least 10 sccm. Preferably, the gas flow of the plasma equipment is 10-120 sccm. More preferably, the gas flow rate of the plasma equipment is 50-70 sccm.
Optionally, the cleaning agent for wet cleaning includes at least one of concentrated sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, hydrogen peroxide, and deionized water.
Optionally, the cleaning temperature of the wet cleaning is 20-150 ℃.
Preferably, the wet cleaning uses ultrasonic or megasonic cleaning.
Optionally, the wet clean is selected from RCA wet chemical cleaning techniques. Preferably, the RCA wet chemical cleaning technique comprises SPM washing, water washing, APM washing, water washing, HPM washing, water washing, DHF washing, water washing and N washing2And (5) drying the environment.
Further, the SPM wash is a wash at 100 ℃ for 10 min. The water washing is carried out for 10min at room temperature. The APM washing is carried out for 10min at 60 ℃. The HPM wash was a wash at 60 ℃ for 10 min. The DHF wash was performed at room temperature for 10 min.
Optionally, the cleaning method of the silicon carbide wafer is selected from: the method comprises the following steps of firstly, sequentially using one of water cleaning, plasma cleaning and wet cleaning, secondly, sequentially using water cleaning, wet cleaning and plasma cleaning, and thirdly, sequentially using water cleaning, plasma cleaning, wet cleaning and plasma cleaning.
Optionally, the cleaning method further comprises water cleaning. As an embodiment, the water washing comprises: the simple rinsing was done manually with a soft brush and water. The water cleaning operation is simple, the cost is low, and impurities with small adhesive force on the surface of the silicon carbide wafer can be removed.
Optionally, the cleaning method of the silicon carbide wafer in the application further comprises the step of carrying out surface impurity test on the cleaned silicon carbide wafer, and packaging the qualified silicon carbide wafer after the test.
Benefits of the present application include, but are not limited to:
1) the cleaning method of the silicon carbide wafer enables the impurities on the surface of the silicon carbide wafer to be removed more cleanly.
2) The cleaning method of the silicon carbide wafer can reduce the pollution degree of impurities to the cleaning tank in the wet cleaning step and reduce the replacement frequency of the cleaning liquid.
3) The plasma cleaning method for the silicon carbide wafer is simple in operation, environment-friendly, high in impurity removal efficiency and capable of improving the overall working efficiency.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 shows the surface grain distributions of silicon carbide wafers No. 6, No. 7 and No. 8 in the examples of the present application as shown in FIGS. 1a, 1b and 1c, respectively.
Detailed Description
The present application will be described in detail with reference to examples, but the present application is not limited to these examples.
Unless otherwise specified, the raw materials and the like mentioned in the examples of the present application were purchased commercially.
The analysis method in the examples of the present application is as follows:
the analysis method in the examples of the present application is as follows:
the CS test employed a CS20 model surface defect inspection device from Candela corporation.
TXRF test A total reflection X-ray fluorescence analyzer type TREX-630 III from Technis was used.
The plasma processing apparatus is a semiconductor plasma processing apparatus of a VPC-500F type manufactured by PLAUX.
Embodiments of the present application perform advantageous effects of the embodiments of the present application in the steps of sequentially using water cleaning, wet cleaning, and plasma cleaning on a silicon carbide wafer.
Example 1 cleaning procedure for silicon carbide wafers
The silicon carbide wafer is prepared in any manner that is practicable by those skilled in the art, such as by using a chemical mechanical polishing (CMP for short) process to produce silicon carbide wafer A #.
The silicon carbide wafer A # is cleaned by using one mode of the application, and the cleaning steps are as follows:
1) water cleaning: and (4) manually carrying out simple washing by using a soft brush and water to remove impurities with low adhesive force on the surface of the silicon carbide wafer, wherein the silicon carbide wafer can be cleaned for 15min at room temperature.
2) Plasma cleaning: the silicon surface of the silicon carbide is upward and horizontally placed in a tray, and then the tray is placed in a cleaning cavity of plasma equipment to carry out the steps of I-V; then, the silicon carbide carbon surface is upwards processed by the steps of I to V;
the specific process steps are as follows: firstly, the pressure of a cleaning cavity of cavity plasma equipment of the plasma equipment is 1-150 pa;
secondly, the power of the plasma equipment is 200-1000W;
thirdly, plasma gas is selected from at least one of air, oxygen, nitrogen, argon and hydrogen;
fourthly, the gas flow used in the plasma equipment is at least 10 sccm;
fifthly, the time for cleaning the silicon carbide wafer is at least 1 min.
3) And (3) wet cleaning: cleaning agent comprises at least one of concentrated sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, hydrogen peroxide and deionized water, and the cleaning temperature is 20-150 ℃; ultrasonic or megasonic cleaning can be matched in the cleaning process.
4) And testing surface impurities of the cleaned silicon carbide wafer, and packaging qualified products.
The silicon carbide wafer A # was cleaned according to the above method, and the specific cleaning method parameters are shown in Table 1, and silicon carbide wafer 1#, silicon carbide wafer 2#, silicon carbide wafer 3#, silicon carbide wafer 4# and silicon carbide wafer 5#, and comparative silicon carbide wafer D1#, comparative silicon carbide wafer D2# and comparative silicon carbide wafer D3# were obtained by cleaning, respectively. Wherein, the SPM washing in the table 1 is washing for 10min at 100 ℃; the water washing is carried out for 10min at room temperature; APM washing is washing at 60 deg.C for 10 min; HPM washing is washing at 60 deg.C for 10 min; DHF wash was performed at room temperature for 10 min.
TABLE 1
| Product(s) | Plasma cleaning step | Wet cleaning | Number of particles on surface of silicon carbide wafer |
| Silicon carbide wafer 1# | The power is 600W, the hydrogen flow is 60sccm, and the holding time is 10min | SPM washing, water washing, APM washing, water washing, HPM washing, water washing, DHF washing, water washing and N2 environment centrifugal spin-drying | 15 |
| Silicon carbide wafer 2# | The power is 600W, the air flow is 60sccm, and the holding time is 10min | Washing with water, APM washing, washing with water, HPM washing, washing with water, DHF washing, washing with water and centrifuging in N2 environment | 42 |
| Silicon carbide wafer 3# | The power is 600W, the nitrogen flow is 60sccm, and the holding time is 10min | Washing with water, APM washing, washing with water, HPM washing, washing with water, DHF washing, washing with water and centrifuging in N2 environment | 38 |
| Silicon carbide wafer 4# | The power is 200W, the hydrogen flow is 60sccm, and the holding time is 10min | Washing with water, APM washing, washing with water, HPM washing, washing with water, DHF washing, washing with water and centrifuging in N2 environment | 50 |
| Silicon carbide wafer 5# | The power is 1000W, the hydrogen flow is 120sccm, and the holding time is 10min | Washing with water, APM washing, washing with water, HPM washing, washing with water, DHF washing, washing with water and centrifuging in N2 environment | 21 |
| Silicon carbide wafer D1# | Does not comprise the step | SPM washing, water washing, APM washing, water washing, HPM washing, water washing, DHF washing, water washing and N2 environment centrifugal spin-drying | 55 |
| Silicon carbide wafer 6# | The power is 600W, the hydrogen flow is 130sccm, and the holding time is 10min | SPM washing, water washing, APM washing, water washing, HPM washing, water washing, DHF washing, water washing and N2 environment centrifugal spin-drying | 16 |
| Silicon carbide wafer 7# | The power is 600W, the hydrogen flow is 60sccm, and the holding time is 30min | SPM washing, water washing, APM washing, water washing, HPM washing, water washing, DHF washing, water washing and N2 environment centrifugal spin-drying | 17 |
The total number of the surface particles of the cleaned silicon carbide wafer is 15-50, and the cleaned silicon carbide wafer is cleaner and less time-consuming. In the plasma test using the power conditions for the silicon carbide wafers 2# and 3# and 4# and 5# respectively, the total number of the surface particles of the silicon carbide wafers was 42, 38, 50 and 21, and the total number of the surface particles of the silicon carbide wafer using no plasma cleaning step was 55 in D1#, and the plasma cleaning effect using nitrogen and air was inferior to that of hydrogen, but the number of the surface particles was smaller than that of the silicon carbide wafer using no plasma cleaning. The total number of surface grains of the silicon carbide wafers 6# and 7# is 16 and 17, respectively, which are more than the surface grains of the silicon carbide wafer 1 #.
Example 2
The silicon carbide wafer A # is subjected to the following three cleaning methods respectively, wherein the water cleaning, the plasma cleaning and the wet cleaning steps in the following methods are the same as those in the silicon carbide wafer 1 #:
the first method, water cleaning, plasma cleaning and wet cleaning, to obtain silicon carbide wafer # 8;
the second method comprises water cleaning and primary wet cleaning to obtain 9# silicon carbide wafer;
and thirdly, cleaning with water and cleaning with a wet method twice to obtain the silicon carbide wafer 10 #.
The cleaned silicon carbide wafers are 8# -10# respectively, and are subjected to CS and TXRF tests for testing the surface particle distribution and the surface element content of the silicon carbide wafers, and 6# -8# of the silicon carbide wafers are shown in FIGS. 1a, 1b and 1c respectively. The number of surface grains and element content data of silicon carbide wafers 8# -10# are shown in Table 2.
TABLE 2
As can be seen from Table 2, the silicon carbide wafers produced by the method for cleaning silicon carbide wafers of the present application had the smallest number of surface particles and the smallest content of surface elements. The third method is repeated based on the traditional RCA wet chemical cleaning technology, and the test result shows that the cleaning effect is better than that of the second method, but still worse than that of the first method. In addition, the plasma cleaning takes a short time. In conclusion, the novel method for cleaning the silicon carbide wafer provided by the invention can effectively improve the cleaning capability of the surface of the silicon carbide wafer, improve the cleanliness of the surface of the wafer and effectively improve the cleaning efficiency.
The above description is only an example of the present application, and the protection scope of the present application is not limited by these specific examples, but is defined by the claims of the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the technical idea and principle of the present application should be included in the protection scope of the present application.
Claims (5)
1. A cleaning method of a silicon carbide wafer is characterized in that the cleaning method comprises the steps of plasma cleaning and wet cleaning, and the total number of the obtained surface particles of the silicon carbide wafer is 15-50;
the plasma gas in the plasma cleaning is hydrogen; the vacuum degree during plasma cleaning is 80Pa, and the gas flow of the plasma gas is 60 sccm;
the time for cleaning the silicon carbide wafer by the plasma gas is 10 min;
the power of the plasma equipment for cleaning the silicon carbide wafer is 600W;
the wet cleaning step comprises: SPM washing, Water washing, APM washing, Water washing, HPM washing, Water washing, DHF washing, Water washing and N2And (5) drying the environment.
2. The cleaning method according to claim 1, wherein the plasma cleaning comprises a step of cleaning a carbon face of the silicon carbide wafer and/or a silicon face of the silicon carbide wafer.
3. The cleaning method according to claim 1, wherein the cleaning temperature of the wet cleaning is 20 to 150 ℃.
4. The cleaning method according to claim 3, wherein the wet cleaning uses ultrasonic or megasonic cleaning.
5. The cleaning method according to any one of claims 1 to 4, further comprising a step of water cleaning, the water cleaning comprising: the silicon carbide wafer was manually cleaned with a soft brush and water at room temperature for 15 min.
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| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
| CN111883416A (en) * | 2020-07-17 | 2020-11-03 | 河北同光科技发展有限公司 | Surface protection method for silicon carbide wafer after chemical mechanical polishing |
| CN115247278A (en) * | 2022-06-23 | 2022-10-28 | 中电化合物半导体有限公司 | Silicon carbide epitaxial structure and preparation method thereof |
| CN115602530B (en) * | 2022-11-01 | 2023-05-23 | 河北同光半导体股份有限公司 | Dynamic cleaning method for silicon carbide wafer surface particles |
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| JPS5944770B2 (en) * | 1980-07-25 | 1984-11-01 | 三菱電機株式会社 | Cleaning method for plasma CVD reactor |
| CN1851877A (en) * | 2005-12-02 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for removing silicon chip surface particle after etching process |
| CN107359108A (en) * | 2017-07-27 | 2017-11-17 | 成都海威华芯科技有限公司 | A kind of semiconductor crystal wafer cleaning method |
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| CN100392821C (en) * | 2004-11-08 | 2008-06-04 | 联华电子股份有限公司 | Process for removing etching residue polymer |
| CN107785304B (en) * | 2016-08-31 | 2020-03-20 | 沈阳硅基科技有限公司 | SOI material with nitride film as insulating buried layer and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944770B2 (en) * | 1980-07-25 | 1984-11-01 | 三菱電機株式会社 | Cleaning method for plasma CVD reactor |
| CN1851877A (en) * | 2005-12-02 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for removing silicon chip surface particle after etching process |
| CN107359108A (en) * | 2017-07-27 | 2017-11-17 | 成都海威华芯科技有限公司 | A kind of semiconductor crystal wafer cleaning method |
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