CN106910674A - A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual - Google Patents
A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual Download PDFInfo
- Publication number
- CN106910674A CN106910674A CN201710120161.8A CN201710120161A CN106910674A CN 106910674 A CN106910674 A CN 106910674A CN 201710120161 A CN201710120161 A CN 201710120161A CN 106910674 A CN106910674 A CN 106910674A
- Authority
- CN
- China
- Prior art keywords
- epitaxial wafer
- sic epitaxial
- deionized water
- wafer surface
- cleaning method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 69
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000008367 deionised water Substances 0.000 claims abstract description 50
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000005406 washing Methods 0.000 claims abstract description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000006210 lotion Substances 0.000 claims abstract description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000011010 flushing procedure Methods 0.000 claims description 7
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000002242 deionisation method Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 84
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 83
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011575 calcium Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710120161.8A CN106910674B (en) | 2017-03-02 | 2017-03-02 | A kind of removal SiC epitaxial wafer metallic pollution or remaining cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710120161.8A CN106910674B (en) | 2017-03-02 | 2017-03-02 | A kind of removal SiC epitaxial wafer metallic pollution or remaining cleaning method |
Publications (2)
Publication Number | Publication Date |
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CN106910674A true CN106910674A (en) | 2017-06-30 |
CN106910674B CN106910674B (en) | 2019-05-24 |
Family
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Family Applications (1)
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CN201710120161.8A Active CN106910674B (en) | 2017-03-02 | 2017-03-02 | A kind of removal SiC epitaxial wafer metallic pollution or remaining cleaning method |
Country Status (1)
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CN (1) | CN106910674B (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108526123A (en) * | 2018-05-18 | 2018-09-14 | 盐城工学院 | Single slot chip purification cleaning device and cleaning method |
CN108648989A (en) * | 2018-05-16 | 2018-10-12 | 福建北电新材料科技有限公司 | A kind of single crystal silicon carbide substrate wafer cleaning method |
CN109226046A (en) * | 2018-10-09 | 2019-01-18 | 西安中科华芯测控有限公司 | A kind of lithium niobate cleaning method suitable for annealed proton exchange process |
CN109727860A (en) * | 2017-10-30 | 2019-05-07 | 全球能源互联网研究院 | A method of preparing silicon carbide superjunction diode |
CN110729293A (en) * | 2019-11-19 | 2020-01-24 | 上海华力集成电路制造有限公司 | Method for increasing effective area of active region |
CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
CN112837995A (en) * | 2020-12-28 | 2021-05-25 | 苏州恩腾半导体科技有限公司 | Wafer surface pollution cleaning method |
CN113399341A (en) * | 2021-05-12 | 2021-09-17 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of SiC epitaxial wafer |
CN113894097A (en) * | 2021-09-29 | 2022-01-07 | 广东先导微电子科技有限公司 | Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing |
CN114082740A (en) * | 2022-01-19 | 2022-02-25 | 北京通美晶体技术股份有限公司 | Method for cleaning germanium wafer and application thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03228327A (en) * | 1990-02-02 | 1991-10-09 | Nec Corp | Cleaning method of semiconductor wafer |
TW464972B (en) * | 2000-07-18 | 2001-11-21 | Taiwan Semiconductor Mfg | Wafer cleaning process added with ozone |
EP2048702A2 (en) * | 2007-10-10 | 2009-04-15 | Siltron Inc. | Method for cleaning silicon wafer |
CN104637801A (en) * | 2015-01-30 | 2015-05-20 | 株洲南车时代电气股份有限公司 | Method for preparing SiC MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) grid oxide layer |
CN105336645A (en) * | 2014-08-14 | 2016-02-17 | 无锡华瑛微电子技术有限公司 | Device and method utilizing ozone-contained fluid to treat surface of semiconductor wafer |
-
2017
- 2017-03-02 CN CN201710120161.8A patent/CN106910674B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03228327A (en) * | 1990-02-02 | 1991-10-09 | Nec Corp | Cleaning method of semiconductor wafer |
TW464972B (en) * | 2000-07-18 | 2001-11-21 | Taiwan Semiconductor Mfg | Wafer cleaning process added with ozone |
EP2048702A2 (en) * | 2007-10-10 | 2009-04-15 | Siltron Inc. | Method for cleaning silicon wafer |
CN105336645A (en) * | 2014-08-14 | 2016-02-17 | 无锡华瑛微电子技术有限公司 | Device and method utilizing ozone-contained fluid to treat surface of semiconductor wafer |
CN104637801A (en) * | 2015-01-30 | 2015-05-20 | 株洲南车时代电气股份有限公司 | Method for preparing SiC MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) grid oxide layer |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109727860A (en) * | 2017-10-30 | 2019-05-07 | 全球能源互联网研究院 | A method of preparing silicon carbide superjunction diode |
CN108648989B (en) * | 2018-05-16 | 2020-12-25 | 福建北电新材料科技有限公司 | Method for cleaning single crystal silicon carbide substrate wafer |
CN108648989A (en) * | 2018-05-16 | 2018-10-12 | 福建北电新材料科技有限公司 | A kind of single crystal silicon carbide substrate wafer cleaning method |
CN108526123A (en) * | 2018-05-18 | 2018-09-14 | 盐城工学院 | Single slot chip purification cleaning device and cleaning method |
CN108526123B (en) * | 2018-05-18 | 2024-02-23 | 盐城工学院 | Single-tank wafer cleaning device and cleaning method |
CN109226046A (en) * | 2018-10-09 | 2019-01-18 | 西安中科华芯测控有限公司 | A kind of lithium niobate cleaning method suitable for annealed proton exchange process |
CN110729293A (en) * | 2019-11-19 | 2020-01-24 | 上海华力集成电路制造有限公司 | Method for increasing effective area of active region |
CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
CN112837995A (en) * | 2020-12-28 | 2021-05-25 | 苏州恩腾半导体科技有限公司 | Wafer surface pollution cleaning method |
CN113399341A (en) * | 2021-05-12 | 2021-09-17 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of SiC epitaxial wafer |
CN113894097A (en) * | 2021-09-29 | 2022-01-07 | 广东先导微电子科技有限公司 | Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing |
CN113894097B (en) * | 2021-09-29 | 2022-08-16 | 广东先导微电子科技有限公司 | Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing |
CN114082740A (en) * | 2022-01-19 | 2022-02-25 | 北京通美晶体技术股份有限公司 | Method for cleaning germanium wafer and application thereof |
CN114082740B (en) * | 2022-01-19 | 2022-04-08 | 北京通美晶体技术股份有限公司 | Method for cleaning germanium wafer and application thereof |
Also Published As
Publication number | Publication date |
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CN106910674B (en) | 2019-05-24 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Cleaning method for removing metal pollution or residuals of SiC epitaxial wafer Effective date of registration: 20190715 Granted publication date: 20190524 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: 2019440000263 |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee after: Guangdong Tianyu Semiconductor Co.,Ltd. Address before: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee before: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230406 Granted publication date: 20190524 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: 2019440000263 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A cleaning method for removing metal contamination or residues from SiC epitaxial wafers Effective date of registration: 20230512 Granted publication date: 20190524 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: Guangdong Tianyu Semiconductor Co.,Ltd. Registration number: Y2023980040499 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20190524 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: Guangdong Tianyu Semiconductor Co.,Ltd. Registration number: Y2023980040499 |