CN106910674A - A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual - Google Patents
A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual Download PDFInfo
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- CN106910674A CN106910674A CN201710120161.8A CN201710120161A CN106910674A CN 106910674 A CN106910674 A CN 106910674A CN 201710120161 A CN201710120161 A CN 201710120161A CN 106910674 A CN106910674 A CN 106910674A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 69
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000008367 deionised water Substances 0.000 claims abstract description 50
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000005406 washing Methods 0.000 claims abstract description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000006210 lotion Substances 0.000 claims abstract description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000011010 flushing procedure Methods 0.000 claims description 7
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000002242 deionisation method Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 84
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 83
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011575 calcium Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention discloses a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual, and it is comprised the following steps：A, SiC epitaxial wafer is placed in the mixing washing lotion being mixed to form by sulfuric acid and hydrogen peroxide of heating and soaked；B, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in ultrasonic wave cleaning in acetone；C, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in the mixing washing lotion being mixed to form by ammoniacal liquor, hydrogen peroxide, deionized water of heating and soak；D, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in the mixing washing lotion being mixed to form by hydrochloric acid, hydrogen peroxide, deionized water of heating and soak；E, with Ozone Water, ammoniacal liquor, High Purity Nitrogen deionized water is added to rinse SiC epitaxial wafer surface respectively successively；F, with Ozone Water, hydrofluoric acid solution, Ozone Water SiC epitaxial wafer surface is rinsed respectively successively；G, with deionized water rinsing SiC epitaxial wafer surface, rotation at a high speed is dried.
Description
Technical field：
The present invention relates to technical field of semiconductors, a kind of cleaning for removing SiC epitaxial wafer metallic pollution or residual is refered in particular to
Method.
Background technology：
Carborundum (SiC) is a kind of important semiconductor material with wide forbidden band, and SiC is a kind of a new generation of excellent performance (
Three generations) semiconductor material with wide forbidden band, it is the Typical Representative of third generation semi-conducting material, it is also current crystal technique and device
Manufacture level is most ripe, one of most widely used semiconductor material with wide forbidden band, is high temperature, high frequency, Flouride-resistani acid phesphatase, high-power applications
Highly desirable semi-conducting material under occasion.SiC semiconductor material has broad-band gap, saturation drift velocity high, high heat conductance, height
The outstanding advantages such as critical breakdown electric field, are particularly suitable for making high-power, high pressure, high temperature, Flouride-resistani acid phesphatase electronic device.Due to SiC work(
Rate device can significantly reduce the energy consumption of electronic equipment, therefore SiC power devices are also described as driving " the green of " new energy revolution "
The energy " device.
SiC epitaxial wafer is the epitaxial wafer using SiC single crystal piece as substrate growth, and epitaxial wafer is mainly used in various discrete
Making of device, such as SBD, MOSFET, JFET, BJT, SIT and MESFET etc., these devices are widely used in every field,
Such as Aero-Space, electric/hybrid automobile, Industry Control, white domestic appliances, new energy, intelligent grid, motor control, track
Traffic, steamer, military affairs etc..
Metallic pollution is mainly derived from test process after the completion of SiC epitaxial wafer growth, for example：Carrier concentration is surveyed
Examination, at present, semicon industry accreditation is mercury probe high frequency capacitance-voltage tester (C-V tests) analytic approach.Its advantage is stabilization
Property it is good, non-damage test；It has the disadvantage that wafer surface is contacted with mercury, causes mercury to stain.Other tests, such as thickness measuring,
Surface roughness test etc., SiC wafer is contacted with test equipment can all different degrees of metallic pollution.Because SiC hardness is high,
Diamond is only second to, so SiC is vulnerable to pollution when being contacted with other metals.
During manufacture, the cleanliness factor of semi-conducting material has emphatically semiconductor devices to the performance and yield rate of device
Influence, and metallic pollution or residual can cause to shorten minority carrier life time, reduce the consequences such as breakdown voltage, influence semiconductor devices
The reliability of energy and the yield rate of device.So when semiconductor devices is manufactured, the cleaning to semi-conducting material is particularly important.
In view of this, the present inventor proposes following technical scheme.
The content of the invention：
It is an object of the invention to overcome the deficiencies in the prior art, there is provided one kind removal SiC epitaxial wafer metallic pollution or
The cleaning method of residual.
In order to solve the above-mentioned technical problem, present invention employs following technical proposals：The removal SiC epitaxial wafer metal is dirty
The cleaning method of dye or residual is comprised the following steps：A, SiC epitaxial wafer is placed in heating mix shape with hydrogen peroxide by sulfuric acid
Into mixing washing lotion in soak；B, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in ultrasonic wave cleaning in acetone；
C, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in being mixed to form by ammoniacal liquor, hydrogen peroxide, deionized water for heating
Mixing washing lotion in soak；D, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in heating by hydrochloric acid, hydrogen peroxide,
Soaked in the mixing washing lotion that deionized water is mixed to form；E, with Ozone Water, ammoniacal liquor, High Purity Nitrogen deionized water is added to rinse respectively successively
SiC epitaxial wafer surface；F, with Ozone Water, hydrofluoric acid solution, Ozone Water SiC epitaxial wafer surface is rinsed respectively successively；G, use
Deionized water rinsing SiC epitaxial wafer surface, at a high speed rotation is dried.
Furthermore, in above-mentioned technical proposal, in step a, c, d, described mixing washing lotion is both heated to 50~150
℃。
Furthermore, in above-mentioned technical proposal, in step b, c, d, e, f, g, when being rinsed to SiC epitaxial wafer,
SiC epitaxial wafer is in high speed rotation status.
Furthermore, in above-mentioned technical proposal, in step e, deionized water rinsing SiC extensions are being added using High Purity Nitrogen
During chip, using inclination binary channels side by side up and down.
Furthermore, in above-mentioned technical proposal, in step f, the concentration of the hydrofluoric acid solution is 0.1%~2%.
Furthermore, in above-mentioned technical proposal, in step f, SiC epitaxial wafer surface is rinsed using hydrofluoric acid solution
Afterwards, ozone water flushing SiC epitaxial wafer surface is reused, SiC epitaxial wafer surface is formed layer oxide film.
Furthermore, in above-mentioned technical proposal, in step a, in the mixing washing lotion that sulfuric acid and hydrogen peroxide are mixed to form
In, sulfuric acid is 3 with the proportioning of hydrogen peroxide:1.
Furthermore, in above-mentioned technical proposal, in step c, it is mixed to form in ammoniacal liquor, hydrogen peroxide, deionized water
In mixing washing lotion, ammoniacal liquor, hydrogen peroxide, the proportioning of deionized water are 1:1:5.
Furthermore, in above-mentioned technical proposal, in step d, it is mixed to form in hydrochloric acid, hydrogen peroxide, deionized water
In mixing washing lotion, hydrochloric acid, hydrogen peroxide, the proportioning of deionized water are 1:1:5.
Furthermore, it is brilliant with High Purity Nitrogen plus deionized water rinsing SiC extensions in step e in above-mentioned technical proposal
When, the High Purity Nitrogen pressure value is 80psi, and de-ionized water flow rate is 2.5L/min.
After adopting the above technical scheme, the present invention has the advantages that compared with prior art：The present invention is used
Chemical cleaning method cleans SiC epitaxial wafer with the method that physical cleaning method is combined, wherein, the method for heating immersion can be preliminary
Have organic contamination, partial particulate and the part metals on removal SiC epitaxial wafer surface pollute；Rinse rotation SiC extensions at a high speed brilliant
The method of piece can make chemical liquid or deionized water or the gas have an active force in wafer surface, be not only able to more effective
Removal SiC epitaxial wafer surface polluter, and pollution sources can in time be taken away and depart from SiC epitaxial wafer surface,
Effectively prevent because pollution sources diffusion and caused by SiC epitaxial wafer surface second stain.It is of the invention to be rushed using Ozone Water for the first time
SiC epitaxial wafer surface is washed, the purpose is to first generate layer oxide film, SiC epitaxial wafer is then rinsed by hydrofluoric acid solution
Surface further removes metallic pollution or residual to remove this layer of oxide-film, and it is dirty to can reach thoroughly removal wafer surface metal
The purpose of dye or residual.Then ozone water flushing SiC epitaxial wafer surface is reused, then in SiC epitaxial wafer superficial growth one
The thin oxide-film of layer, reduces SiC epitaxial wafer surface and is contaminated with metals again, so as to prevent silicon carbide wafer adsorption secondary
Pollutant.
Brief description of the drawings：
Fig. 1 is that the present invention schemes the step of implementing one；
Fig. 2 is that the present invention schemes the step of implementing two；
Fig. 3 is the test result that the present invention implements a cleaning experiment；
Fig. 4 is the test result that the present invention implements two cleaning experiments.
Specific embodiment：
With reference to specific embodiments and the drawings, the present invention is further described.
SiC epitaxial wafer before washing, its surface attachment some dust granules, organic contamination, metallic pollution or residual
Deng.
A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual, it is characterised in that：The cleaning method includes
Following steps：
A, SiC epitaxial wafer is placed in the mixing washing lotion being mixed to form by sulfuric acid and hydrogen peroxide of heating and soaked, its mesh
Be that organic contamination, particle and the mercury for removing SiC epitaxial wafer surface stain and part metals pollution or remains；Wherein, exist
In the mixing washing lotion that sulfuric acid is mixed to form with hydrogen peroxide, sulfuric acid is 3 with the proportioning of hydrogen peroxide:1；
B, with deionized water rinsing SiC epitaxial wafer surface, ultrasonic wave cleaning in acetone is subsequently placed in, the purpose is to remove
The organic contamination on SiC epitaxial wafer surface and dust granule.
C, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in heating by ammoniacal liquor, hydrogen peroxide, deionized water
Soaked in the mixing washing lotion being mixed to form, the purpose is to the dust granule on further removal SiC epitaxial wafer surface；Wherein, exist
In the mixing washing lotion that ammoniacal liquor, hydrogen peroxide, deionized water are mixed to form, ammoniacal liquor, hydrogen peroxide, the proportioning of deionized water are 1:1:5.
D, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in heating by hydrochloric acid, hydrogen peroxide, deionized water
Soaked in the mixing washing lotion being mixed to form, the purpose is to the part metals pollution on further removal SiC epitaxial wafer surface；Its
In, in the mixing washing lotion that hydrochloric acid, hydrogen peroxide, deionized water are mixed to form, hydrochloric acid, hydrogen peroxide, the proportioning of deionized water are 1:
1:5.Most of metallic pollution or residual can be quickly removed using hydrochloric acid.
E, with Ozone Water, ammoniacal liquor, High Purity Nitrogen deionized water is added to rinse SiC epitaxial wafer surface respectively successively, the purpose is to
Further remove the particle on SiC epitaxial wafer surface；During with High Purity Nitrogen plus brilliant deionized water rinsing SiC extensions, the High Purity Nitrogen pressure
Force value 80psi or so, de-ionized water flow rate is 2.5L/min or so, in addition, being added outside deionized water rinsing SiC using High Purity Nitrogen
When prolonging chip, using inclination binary channels side by side up and down.SiC epitaxial wafer wherein is rinsed using ammoniacal liquor, the effect for removing particle is bright
It is aobvious.
F, with Ozone Water, hydrofluoric acid solution, Ozone Water SiC epitaxial wafer surface is rinsed respectively successively；Wherein, the hydrogen fluorine
The concentration of acid solution is 0.1%~2%.After rinsing SiC epitaxial wafer surface using hydrofluoric acid solution, ozone water flushing is reused
SiC epitaxial wafer surface, makes SiC epitaxial wafer surface form layer oxide film.Specifically, rushed using Ozone Water in first time
SiC epitaxial wafer surface is washed, the purpose is to first generate layer oxide film, SiC epitaxial wafer is then rinsed by hydrofluoric acid solution
Surface further removes metallic pollution or residual to remove this layer of oxide-film, and it is dirty to can reach thoroughly removal wafer surface metal
The purpose of dye or residual.Then ozone water flushing SiC epitaxial wafer surface is reused, then in SiC epitaxial wafer superficial growth one
The thin oxide-film of layer, reduces SiC epitaxial wafer surface and is contaminated with metals again, so as to prevent silicon carbide wafer adsorption secondary
Pollutant.
G, with deionized water rinsing SiC epitaxial wafer surface, rotation at a high speed is dried.
In step a, c, d, described mixing washing lotion is both heated to 50~150 DEG C.
In step b, c, d, e, f, g, when being rinsed to SiC epitaxial wafer, it is contorted that SiC epitaxial wafer is in high speed
State.
In sum, it is brilliant with the method cleaning SiC extensions that physical cleaning method is combined present invention employs chemical cleaning method
Piece, wherein, heat immersion method can tentatively remove SiC epitaxial wafer surface have organic contamination, partial particulate and part gold
Category pollution；The method for rinsing rotation SiC epitaxial wafer at a high speed can make chemical liquid or deionized water or gas in chip table
There is an active force in face, is not only able to the polluter on more effectively removal SiC epitaxial wafer surface, and can by pollution sources and
When take away and depart from SiC epitaxial wafer surface, effectively prevent because pollution sources diffusion and caused by SiC epitaxial wafer surface second be stained with
It is dirty.It is of the invention to use ozone water flushing SiC epitaxial wafer surface for the first time, the purpose is to first generate layer oxide film, Ran Houtong
Cross hydrofluoric acid solution and rinse SiC epitaxial wafer surface to remove this layer of oxide-film, further removal metallic pollution or residual, and can
Reach the purpose of thoroughly removal wafer surface metallic pollution or residual.Then ozone water flushing SiC epitaxial wafer surface is reused,
Again in one layer of thin oxide-film of SiC epitaxial wafer superficial growth, reduce SiC epitaxial wafer surface and be contaminated with metals again, so that
Prevention silicon carbide wafer adsorption secondary pollution.
Embodiment one：
With reference to shown in Fig. 1, the present embodiment one uses above-mentioned removal SiC epitaxial wafer metallic pollution or the cleaning method of residual
In step a, b, c, d, g, two print testing results show in the present embodiment one：Calcium (Ca) residual quantity minimum value is 3.241E
+11atom/cm2, maximum is 1.1623E+12atom/cm2；Iron (Fe) residual quantity minimum value is 1.58E+10atom/cm2, most
Big value is 6.74E+10atom/cm2；Zinc (Zn) residual quantity minimum value is 5.53E+10atom/cm2, maximum is 1.281E+
11atom/cm2；Other metallic element residual contents are respectively less than 5E+10atom/cm2, test value is referring to Fig. 3.
Embodiment two：
With reference to shown in Fig. 2, the present embodiment two uses above-mentioned removal SiC epitaxial wafer metallic pollution or the cleaning method of residual
In step a, b, c, d, e, f, g, two print testing results show in the present embodiment two：Sample 04 (Sample 04) center
Point potassium (K), two kinds of constituent contents of calcium (Ca) are higher, and other test points are respectively less than 5E+10atom/cm2；Iron (Fe) residual quantity is minimum
Value is less than 0.45E+10atom/cm2, maximum is 0.88E+10atom/cm2；Zinc (Zn) residual quantity minimum value is less than 0.21E+
10atom/cm2, maximum is 1.41E+10atom/cm2；Other metallic element residual contents are respectively less than 2E+10atom/cm2, survey
Examination value is referring to Fig. 4.
Embodiment two goes the effect of metallic pollution or residual more preferably, and result meets requirement of the semicon industry to material.
Certainly, the foregoing is only specific embodiment of the invention, not limit the scope of the present invention, it is all according to
The equivalent change or modification that construction, feature and principle described in scope of the present invention patent are done, all should be included in Shen of the present invention
Please be in the scope of the claims.
Claims (10)
1. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual, it is characterised in that：The cleaning method include with
Lower step：
A, SiC epitaxial wafer is placed in the mixing washing lotion being mixed to form by sulfuric acid and hydrogen peroxide of heating and soaked；
B, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in ultrasonic wave cleaning in acetone；
C, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in being mixed by ammoniacal liquor, hydrogen peroxide, deionized water for heating
Soaked in the mixing washing lotion of formation；
D, with deionized water rinsing SiC epitaxial wafer surface, be subsequently placed in being mixed by hydrochloric acid, hydrogen peroxide, deionized water for heating
Soaked in the mixing washing lotion of formation；
E, with Ozone Water, ammoniacal liquor, High Purity Nitrogen deionized water is added to rinse SiC epitaxial wafer surface respectively successively；
F, with Ozone Water, hydrofluoric acid solution, Ozone Water SiC epitaxial wafer surface is rinsed respectively successively；
G, with deionized water rinsing SiC epitaxial wafer surface, rotation at a high speed is dried.
2. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step a, c, d, described mixing washing lotion is both heated to 50~150 DEG C.
3. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step b, c, d, e, f, g, when being rinsed to SiC epitaxial wafer, SiC epitaxial wafer is in high speed rotation status.
4. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step e, when deionized water rinsing SiC epitaxial wafer is added using High Purity Nitrogen, using inclination binary channels side by side up and down.
5. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step f, the concentration of the hydrofluoric acid solution is 0.1%~2%.
6. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step f, after rinsing SiC epitaxial wafer surface using hydrofluoric acid solution, ozone water flushing SiC epitaxial wafer is reused
Surface, makes SiC epitaxial wafer surface form layer oxide film.
7. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step a, in the mixing washing lotion that sulfuric acid and hydrogen peroxide are mixed to form, sulfuric acid is 3 with the proportioning of hydrogen peroxide:1.
8. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step c, in the mixing washing lotion that ammoniacal liquor, hydrogen peroxide, deionized water are mixed to form, ammoniacal liquor, hydrogen peroxide, deionized water
Proportioning be 1:1:5.
9. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature exists
In：In step d, in the mixing washing lotion that hydrochloric acid, hydrogen peroxide, deionized water are mixed to form, hydrochloric acid, hydrogen peroxide, deionized water
Proportioning be 1:1:5.
10. a kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual according to claim 1, its feature
It is：In step e, during with High Purity Nitrogen plus brilliant deionized water rinsing SiC extensions, the High Purity Nitrogen pressure value is 80psi, deionization
Water-carrying capacity is 2.5L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710120161.8A CN106910674B (en) | 2017-03-02 | 2017-03-02 | A kind of removal SiC epitaxial wafer metallic pollution or remaining cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710120161.8A CN106910674B (en) | 2017-03-02 | 2017-03-02 | A kind of removal SiC epitaxial wafer metallic pollution or remaining cleaning method |
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| CN108526123A (en) * | 2018-05-18 | 2018-09-14 | 盐城工学院 | Single slot chip purification cleaning device and cleaning method |
| CN108648989A (en) * | 2018-05-16 | 2018-10-12 | 福建北电新材料科技有限公司 | A kind of single crystal silicon carbide substrate wafer cleaning method |
| CN109226046A (en) * | 2018-10-09 | 2019-01-18 | 西安中科华芯测控有限公司 | A kind of lithium niobate cleaning method suitable for annealed proton exchange process |
| CN109727860A (en) * | 2017-10-30 | 2019-05-07 | 全球能源互联网研究院 | A method of preparing silicon carbide superjunction diode |
| CN110729293A (en) * | 2019-11-19 | 2020-01-24 | 上海华力集成电路制造有限公司 | Method for increasing effective area of active region |
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
| CN112837995A (en) * | 2020-12-28 | 2021-05-25 | 苏州恩腾半导体科技有限公司 | Wafer surface pollution cleaning method |
| CN113399341A (en) * | 2021-05-12 | 2021-09-17 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of SiC epitaxial wafer |
| CN113894097A (en) * | 2021-09-29 | 2022-01-07 | 广东先导微电子科技有限公司 | Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing |
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| CN109727860A (en) * | 2017-10-30 | 2019-05-07 | 全球能源互联网研究院 | A method of preparing silicon carbide superjunction diode |
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| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
| CN112837995A (en) * | 2020-12-28 | 2021-05-25 | 苏州恩腾半导体科技有限公司 | Wafer surface pollution cleaning method |
| CN113399341A (en) * | 2021-05-12 | 2021-09-17 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of SiC epitaxial wafer |
| CN113894097A (en) * | 2021-09-29 | 2022-01-07 | 广东先导微电子科技有限公司 | Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing |
| CN113894097B (en) * | 2021-09-29 | 2022-08-16 | 广东先导微电子科技有限公司 | Cleaning process of cadmium zinc telluride single crystal wafer after chemical mechanical polishing |
| CN114082740A (en) * | 2022-01-19 | 2022-02-25 | 北京通美晶体技术股份有限公司 | Method for cleaning germanium wafer and application thereof |
| CN114082740B (en) * | 2022-01-19 | 2022-04-08 | 北京通美晶体技术股份有限公司 | Method for cleaning germanium wafer and application thereof |
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Denomination of invention: Cleaning method for removing metal pollution or residuals of SiC epitaxial wafer Effective date of registration: 20190715 Granted publication date: 20190524 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: 2019440000263 |
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