CN108648989B - Method for cleaning single crystal silicon carbide substrate wafer - Google Patents
Method for cleaning single crystal silicon carbide substrate wafer Download PDFInfo
- Publication number
- CN108648989B CN108648989B CN201810466773.7A CN201810466773A CN108648989B CN 108648989 B CN108648989 B CN 108648989B CN 201810466773 A CN201810466773 A CN 201810466773A CN 108648989 B CN108648989 B CN 108648989B
- Authority
- CN
- China
- Prior art keywords
- cleaning
- silicon carbide
- single crystal
- wafer
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method for cleaning a single crystal silicon carbide substrate wafer, which comprises the following steps: step S10, rinsing: placing the polished single crystal silicon carbide substrate wafer into a ceramic disc, adjusting a water pressure regulating valve to enable water to be sprayed on the wafer on the ceramic disc through a sharp nozzle water spraying opening, and controlling the flow of the water to remove residual polishing solution on the surface of the wafer, large-particle metal particles and other pollutants; step S20, carrying out low-frequency pure water ultrasonic treatment; step S30, liquid medicine processing; step S40, QDR processing. The invention can reach the granularity of 0.5um on the surface of the wafer less than or equal to 1000 and the qualification rate more than 90 percent after the whole cleaning process, has obvious improvement compared with the prior cleaning effect, is sent into a dust-free chamber for final cleaning, improves the passing rate of the wafer by 13 to 18 percent compared with the prior process, and prolongs the service life of the cleaning agent of the dust-free chamber by 25 to 30 percent due to the reduction of the granularity of the supplied materials and high stability.
Description
Technical Field
The invention relates to the technical field of processing of silicon carbide substrate wafers, in particular to a method for cleaning a single crystal silicon carbide substrate wafer.
Background
The silicon carbide is used as a third-generation semiconductor material, has the characteristics of large forbidden band width, high breakdown field strength, high thermal conductivity, high electron saturation drift velocity, strong radiation resistance, good chemical stability and the like, and becomes a key material of a new-generation electronic device. Has a trillion market in the aspects of energy conservation and emission reduction, national defense construction, electronic information and the like. Meanwhile, the silicon carbide and the important material GaN for manufacturing high-power microwave, power electronic and photoelectronic devices have very small lattice mismatch and thermal expansion coefficient difference, so that the silicon carbide becomes an important substrate material of a new generation of wide bandgap semiconductor devices.
The cleanliness of the surface of the silicon carbide wafer as a substrate material directly affects the yield of the back-end patterning and epitaxial processing and the performance stability of the final device. The process for processing the silicon carbide crystal comprises line cutting, grinding, chamfering, annealing, copper polishing, polishing and 100-grade clean room cleaning. And each processing procedure has a corresponding cleaning procedure for removing dirt and metal ions on the surface of the wafer and then carrying out the next procedure. And the polishing is the last processing to the wafer in the substrate processing, and the cleaning effect after the polishing directly determines the incoming material condition of the cleaning of the wafer in the dust-free chamber and the cleanliness and quality of the surface of the final substrate.
And pollutants such as polishing solution, metal ions and the like are remained on the surface of the polished wafer. The traditional cleaning method after polishing is to take the wafer off the ceramic disc after polishing and cleaning the wafer by liquid medicine in a plurality of grooves, 1, 3 and 5 in figure 1; the QDR cleaning process is matched with a plurality of grooves, 2, 4 and 6 in figure 1, and the whole cleaning process takes 1-2 hours. Because the characteristics of the residual pollutants on the surface of the wafer and the particle sizes of the pollutants are diversified, the traditional cleaning has the problems of long process time, large dosage of liquid medicine, large fluctuation of the particle size number on the surface of the cleaned wafer and the like.
Therefore, there is a need for a method for cleaning a single crystal silicon carbide substrate wafer that has a short cleaning process time, a low amount of cleaning agent used, a low amount of particles on the surface of the wafer after cleaning, and a high stability between wafers.
Disclosure of Invention
Aiming at the problem of cleaning the polished silicon carbide substrate wafer, the invention provides a method for cleaning a single crystal silicon carbide substrate wafer, which removes dirt particles on the surface of the wafer by adding a previous pre-cleaning method and a new cleaning method for reducing the number of a liquid medicine tank and a QDR tank; the whole cleaning process time is reduced, the dosage of the cleaning agent is reduced, the particles on the surface of the cleaned wafer are reduced, and the stability among the cleaned wafers is improved.
The technical scheme adopted by the invention for solving the problems is as follows: a method for cleaning a single crystal silicon carbide substrate wafer, comprising the steps of:
step S10, rinsing: placing the polished single crystal silicon carbide substrate wafer into a ceramic disc, adjusting a water pressure regulating valve to enable water to strike the wafer on the ceramic disc through a sharp nozzle water jet, controlling the water flow to remove polishing solution and large-particle metal particles and other pollutants remained on the surface of the wafer, and enabling the water to sweep each position of the wafer on the ceramic disc by rotating the ceramic disc;
step S20, low-frequency pure water ultrasonic treatment: placing the single crystal silicon carbide substrate wafer washed in the step S10 into a low-frequency pure water ultrasonic tank, and further removing large-particle pollutants on the surface of the single crystal silicon carbide substrate wafer;
step S30, chemical processing: placing the single crystal silicon carbide substrate wafer subjected to low-frequency pure water ultrasonic treatment in the step S20 into a liquid medicine tank, and cleaning small-particle pollutants by using a cleaning agent;
step S40, QDR process: the single crystal silicon carbide substrate wafer processed with the chemical solution of step S30 is placed in a QDR tank, and surface cleaning and residual cleaning of the single crystal silicon carbide substrate wafer are performed.
Further, in step S10, the apparatus for rinsing process includes: water pressure regulating valve, flat water jet and ceramic disk.
Further, in step S10, a flat water nozzle is sleeved at the sharp nozzle water nozzle.
Further, in step S10, the rinsing time is 2min to 8 min.
Further, in step S20, the low frequency pure water ultrasonic tank includes: ultrasonic board, wafer box.
Further, in step S20, the process parameters of the low-frequency pure water ultrasonic treatment are as follows: the ultrasonic frequency is 10 KHz-40 KHz, the pure water temperature is 40 ℃ to 80 ℃, and the processing time is 3 min-12 min.
Further, in step S30, the chemical solution tank includes: ultrasonic board, wafer box, circulation filter core.
Further, in step S30, the process parameters of the chemical solution treatment are: ultrasonic frequency is 60 KHz-120 KHz, the liquid medicine proportion is 3% -15%, the circulating filter element is 0.5 um-1 um, and the processing time is 5 min-15 min.
Further, in step S30, the alkaline pH of the cleaning agent used for the chemical solution treatment is 8 to 14.
Further, in step S40, the QDR cleaning time is 5 to 15 min.
The invention has the advantages that:
1. the cleaning method of the single crystal silicon carbide substrate wafer adds the washing treatment process and the low-frequency ultrasonic treatment process, removes the number of 4-groove cleaning grooves of the prior art, saves the cleaning process time and shortens the process time by more than half;
2. the method for cleaning the single crystal silicon carbide substrate wafer saves the usage amount of cleaning agent and cleaning agent, saves the cost, obviously improves the cleaning effect of the wafer, and improves the cleaning effect;
3. the method for cleaning the single crystal silicon carbide substrate wafer has obvious influence on the final cleaning of the rear-stage clean room wafer, improves the passing rate of the lens and prolongs the service life of the liquid medicine;
4. the invention can reach the granularity of 0.5um on the surface of the wafer less than or equal to 1000 and the qualification rate more than 90 percent after the whole cleaning process, has obvious improvement compared with the prior cleaning effect, is sent into a dust-free chamber for final cleaning, improves the passing rate of the wafer by 13 to 18 percent compared with the prior process, and prolongs the service life of the cleaning agent of the dust-free chamber by 25 to 30 percent due to the reduction of the granularity of the supplied materials and high stability.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the preparation of the invention. In the drawings:
FIG. 1 is a conventional post-polish cleaning method;
FIG. 2 is a process flow diagram of the single crystal silicon carbide substrate wafer cleaning of the present invention;
FIG. 3 is a flow chart of an apparatus for cleaning a single crystal silicon carbide substrate wafer of the present invention;
reference numbers in the figures: 1-liquid medicine cleaning tank, 2-QDR cleaning tank, 3-liquid medicine cleaning tank, 4-QDR cleaning tank, 5-liquid medicine cleaning tank, 6-QDR cleaning tank, 1A-cleaning treatment, 2A-low frequency pure water ultrasonic tank, 3A-liquid medicine tank, 4A-QDR tank, 1A-water pressure regulating valve, 2A-water tank, 2 b-ultrasonic plate, 2 c-substrate wafer box, 3A-liquid medicine tank, 3 b-ultrasonic plate, 3c substrate wafer box, 3 d-filter core circulation, 4A-QDR tank and 4 b-substrate wafer box.
Detailed Description
The embodiments of the invention will be described in detail below with reference to the drawings, but the invention can be implemented in many different ways as defined and covered by the claims.
Example 1
A method for cleaning a single crystal silicon carbide substrate wafer, comprising the steps of:
step S10, rinsing: the polished single crystal silicon carbide substrate wafer is placed in a ceramic disc, a water pressure regulating valve is adjusted to enable water to pass through a sharp nozzle water spray nozzle sleeved with a flat water spray nozzle to hit the wafer on the ceramic disc, the water flow is controlled to remove pollutants such as residual polishing liquid on the surface of the crystal and large-particle metal particles, the water is enabled to sweep each position of the wafer on the ceramic disc by rotating the ceramic disc, the washing time is 2min, and the device for washing treatment comprises: a water pressure regulating valve, a flat water jet and a ceramic disc;
step S20, low-frequency pure water ultrasonic treatment: placing the single crystal silicon carbide substrate wafer rinsed in step S10 into a low-frequency pure water ultrasonic tank, the low-frequency pure water ultrasonic tank comprising: the ultrasonic plate and the wafer box are used for further removing large-particle pollutants on the surface of the single crystal silicon carbide substrate wafer, and the technological parameters of the low-frequency pure water ultrasonic treatment are as follows: ultrasonic frequency is 10KHz, pure water temperature is 40 ℃, and processing time is 12 min;
step S30, chemical processing: placing the single crystal silicon carbide substrate wafer subjected to the low-frequency pure water ultrasonic treatment in the step S20 into a liquid medicine tank, wherein the liquid medicine tank comprises: ultrasonic board, wafer box, circulation filter core use the cleaner to wash the pollutant of tiny granule, and the technological parameter of liquid medicine processing is: ultrasonic frequency of 60KHz, liquid medicine ratio of 12%, circulating filter element of 1um, process time of 12min, alkaline pH value of cleaning agent used for liquid medicine treatment of 8;
step S40, QDR process: the single crystal silicon carbide substrate wafer treated with the chemical solution of step S30 was placed in a QDR cell, and surface cleaning and residual cleaning of the single crystal silicon carbide substrate wafer were performed for 8 min.
The granularity of 0.5um on the surface of the single crystal silicon carbide substrate wafer cleaned by the method is less than or equal to 1000, the qualification rate is 93 percent, and the method has obvious improvement compared with the existing cleaning effect; the wafer is sent into a clean room for final cleaning, the passing rate of the wafer is improved by 14 percent compared with the prior art, and the service life of the cleaning machine agent in the clean room is prolonged by 25 percent due to the reduction of the granularity of the supplied materials and high stability.
Example 2
A method for cleaning a single crystal silicon carbide substrate wafer, comprising the steps of:
step S10, rinsing: the polished single crystal silicon carbide substrate wafer is placed in a ceramic disc, a water pressure regulating valve is adjusted to enable water to pass through a sharp nozzle water spray nozzle sleeved with a flat water spray nozzle to hit the wafer on the ceramic disc, the water flow is controlled to remove pollutants such as residual polishing liquid on the surface of the crystal and large-particle metal particles, the water is enabled to sweep each position of the wafer on the ceramic disc by rotating the ceramic disc, the washing time is 4min, and the device for washing treatment comprises: a water pressure regulating valve, a flat water jet and a ceramic disc;
step S20, low-frequency pure water ultrasonic treatment: placing the single crystal silicon carbide substrate wafer rinsed in step S10 into a low-frequency pure water ultrasonic tank, the low-frequency pure water ultrasonic tank comprising: the ultrasonic plate and the wafer box are used for further removing large-particle pollutants on the surface of the single crystal silicon carbide substrate wafer, and the technological parameters of the low-frequency pure water ultrasonic treatment are as follows: ultrasonic frequency of 20KHz, pure water temperature of 70 deg.C, and processing time of 3 min;
step S30, chemical processing: placing the single crystal silicon carbide substrate wafer subjected to the low-frequency pure water ultrasonic treatment in the step S20 into a liquid medicine tank, wherein the liquid medicine tank comprises: ultrasonic board, wafer box, circulation filter core use the cleaner to wash the pollutant of tiny granule, and the technological parameter of liquid medicine processing is: ultrasonic frequency of 80KHz, liquid medicine ratio of 3%, circulating filter element of 1um, process time of 5min, alkaline pH value of cleaning agent used for liquid medicine treatment of 9;
step S40, QDR process: the single crystal silicon carbide substrate wafer treated with the chemical solution of step S30 was placed in a QDR cell, and surface cleaning and residual cleaning of the single crystal silicon carbide substrate wafer were performed for 5 min.
The granularity of 0.5um on the surface of the single crystal silicon carbide substrate wafer cleaned by the method is less than or equal to 1000, the qualification rate is 92%, and the method has obvious improvement compared with the existing cleaning effect; the wafer is sent into a dust-free chamber for final cleaning, the passing rate of the wafer is improved by 13 percent compared with the prior art, and the service life of the cleaning machine agent of the dust-free chamber is prolonged by 26 percent due to the reduction of the granularity of the supplied materials and high stability.
Example 3
A method for cleaning a single crystal silicon carbide substrate wafer, comprising the steps of:
step S10, rinsing: the polished single crystal silicon carbide substrate wafer is placed in a ceramic disc, a water pressure regulating valve is adjusted to enable water to pass through a sharp nozzle water spray nozzle sleeved with a flat water spray nozzle to hit the wafer on the ceramic disc, the water flow is controlled to remove pollutants such as residual polishing liquid on the surface of the crystal and large-particle metal particles, the water is enabled to sweep each position of the wafer on the ceramic disc by rotating the ceramic disc, the washing time is 6min, and the device for washing treatment comprises: a water pressure regulating valve, a flat water jet and a ceramic disc;
step S20, low-frequency pure water ultrasonic treatment: placing the single crystal silicon carbide substrate wafer rinsed in step S10 into a low-frequency pure water ultrasonic tank, the low-frequency pure water ultrasonic tank comprising: the ultrasonic plate and the wafer box are used for further removing large-particle pollutants on the surface of the single crystal silicon carbide substrate wafer, and the technological parameters of the low-frequency pure water ultrasonic treatment are as follows: ultrasonic frequency of 40KHz, pure water temperature of 50 deg.C, and processing time of 5 min;
step S30, chemical processing: placing the single crystal silicon carbide substrate wafer subjected to the low-frequency pure water ultrasonic treatment in the step S20 into a liquid medicine tank, wherein the liquid medicine tank comprises: ultrasonic board, wafer box, circulation filter core use the cleaner to wash the pollutant of tiny granule, and the technological parameter of liquid medicine processing is: ultrasonic frequency of 100KHz, liquid medicine ratio of 15%, circulating filter element of 0.5um, process time of 8min, alkaline pH value of cleaning agent used for liquid medicine treatment of 13;
step S40, QDR process: the single crystal silicon carbide substrate wafer treated with the chemical solution of step S30 was placed in a QDR cell, and surface cleaning and residual cleaning of the single crystal silicon carbide substrate wafer were performed for 15 min.
The granularity of 0.5um on the surface of the single crystal silicon carbide substrate wafer cleaned by the method is less than or equal to 1000, the qualification rate is 91 percent, and the method has obvious improvement compared with the existing cleaning effect; the wafer is sent into a clean room for final cleaning, the passing rate of the wafer is improved by 14 percent compared with the prior art, and the service life of the cleaning machine agent in the clean room is prolonged by 29 percent due to the reduction of the granularity of the supplied materials and high stability.
Example 4
A method for cleaning a single crystal silicon carbide substrate wafer, comprising the steps of:
step S10, rinsing: the polished single crystal silicon carbide substrate wafer is placed in a ceramic disc, a water pressure regulating valve is adjusted to enable water to pass through a sharp nozzle water jet to hit the wafer on the ceramic disc, the water flow is controlled to remove residual polishing liquid on the surface of the crystal and large-particle metal particles and other pollutants, the ceramic disc is rotated to enable the water to sweep each position of the wafer on the ceramic disc, the flushing time is 8min, and the device for flushing comprises: a water pressure regulating valve, a flat water jet and a ceramic disc;
step S20, low-frequency pure water ultrasonic treatment: placing the single crystal silicon carbide substrate wafer rinsed in step S10 into a low-frequency pure water ultrasonic tank, the low-frequency pure water ultrasonic tank comprising: the ultrasonic plate and the wafer box are used for further removing large-particle pollutants on the surface of the single crystal silicon carbide substrate wafer, and the technological parameters of the low-frequency pure water ultrasonic treatment are as follows: ultrasonic frequency is 30KHz, pure water temperature is 80 ℃, and processing time is 10 min;
step S30, chemical processing: placing the single crystal silicon carbide substrate wafer subjected to the low-frequency pure water ultrasonic treatment in the step S20 into a liquid medicine tank, wherein the liquid medicine tank comprises: ultrasonic board, wafer box, circulation filter core use the cleaner to wash the pollutant of tiny granule, and the technological parameter of liquid medicine processing is: ultrasonic frequency is 120KHz, liquid medicine proportion is 5%, circulating filter element is 0.5um, process time is 15min, alkaline pH value of cleaning agent used for liquid medicine treatment is 14;
step S40, QDR process: the single crystal silicon carbide substrate wafer treated with the chemical solution of step S30 was placed in a QDR cell, and surface cleaning and residual cleaning of the single crystal silicon carbide substrate wafer were performed for 12 min.
The granularity of 0.5um on the surface of the single crystal silicon carbide substrate wafer cleaned by the method is less than or equal to 1000, the qualification rate is 93 percent, and the method has obvious improvement compared with the existing cleaning effect; the wafer is sent into a dust-free chamber for final cleaning, the passing rate of the wafer is improved by 16 percent compared with the prior art, and the service life of the cleaning machine agent in the dust-free chamber is prolonged by 27 percent due to the reduction of the granularity of the supplied materials and high stability.
Example 5
A method for cleaning a single crystal silicon carbide substrate wafer, comprising the steps of:
step S10, rinsing: the polished single crystal silicon carbide substrate wafer is placed in a ceramic disc, a water pressure regulating valve is adjusted to enable water to pass through a sharp nozzle water spray nozzle sleeved with a flat water spray nozzle to hit the wafer on the ceramic disc, the water flow is controlled to remove pollutants such as residual polishing liquid on the surface of the crystal and large-particle metal particles, the water is enabled to sweep each position of the wafer on the ceramic disc by rotating the ceramic disc, the washing time is 5min, and the device for washing treatment comprises: a water pressure regulating valve, a flat water jet and a ceramic disc;
step S20, low-frequency pure water ultrasonic treatment: placing the single crystal silicon carbide substrate wafer rinsed in step S10 into a low-frequency pure water ultrasonic tank, the low-frequency pure water ultrasonic tank comprising: the ultrasonic plate and the wafer box are used for further removing large-particle pollutants on the surface of the single crystal silicon carbide substrate wafer, and the technological parameters of the low-frequency pure water ultrasonic treatment are as follows: ultrasonic frequency of 20KHz, pure water temperature of 60 deg.C, and processing time of 8 min;
step S30, chemical processing: placing the single crystal silicon carbide substrate wafer subjected to the low-frequency pure water ultrasonic treatment in the step S20 into a liquid medicine tank, wherein the liquid medicine tank comprises: ultrasonic board, wafer box, circulation filter core use the cleaner to wash the pollutant of tiny granule, and the technological parameter of liquid medicine processing is: ultrasonic frequency is 90KHz, liquid medicine ratio is 9%, circulating filter element is 1um, process time is 10min, alkaline pH value of cleaning agent used for liquid medicine treatment is 11;
step S40, QDR process: the single crystal silicon carbide substrate wafer treated with the chemical solution of step S30 was placed in a QDR cell, and surface cleaning and residual cleaning of the single crystal silicon carbide substrate wafer were performed for 10 min.
The granularity of 0.5um on the surface of the single crystal silicon carbide substrate wafer cleaned by the method is less than or equal to 1000, the qualification rate is 95 percent, and the method has obvious improvement compared with the existing cleaning effect; the wafer is sent into a dust-free chamber for final cleaning, the passing rate of the wafer is improved by 18 percent compared with the prior art, and the service life of the cleaning machine agent of the dust-free chamber is prolonged by 30 percent due to the reduction of the granularity of the supplied materials and high stability.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A method for cleaning a single crystal silicon carbide substrate wafer, comprising the steps of:
step S10, rinsing: placing the polished single crystal silicon carbide substrate wafer into a ceramic disc, adjusting a water pressure regulating valve to enable water to strike the wafer on the ceramic disc through a sharp nozzle water jet, controlling the water flow to remove polishing liquid and large-particle metal particle pollutants remained on the surface of the wafer, and enabling the water to sweep each position of the wafer on the ceramic disc by rotating the ceramic disc;
step S20, low-frequency pure water ultrasonic treatment: placing the single crystal silicon carbide substrate wafer washed in the step S10 into a low-frequency pure water ultrasonic tank, and further removing large-particle pollutants on the surface of the single crystal silicon carbide substrate wafer;
step S30, chemical processing: placing the single crystal silicon carbide substrate wafer subjected to low-frequency pure water ultrasonic treatment in the step S20 into a liquid medicine tank, and cleaning small-particle pollutants by using a cleaning agent;
step S40, QDR process: placing the single crystal silicon carbide substrate wafer treated by the liquid medicine in the step S30 into a QDR tank, and cleaning the surface and the residue of the single crystal silicon carbide substrate wafer;
in step S10, the apparatus for flushing processing includes: a water pressure regulating valve, a flat water jet and a ceramic disc;
in step S20, the process parameters of the low-frequency pure water ultrasonic treatment are: the ultrasonic frequency is 10 KHz-40 KHz, the pure water temperature is 40 ℃ to 80 ℃, and the processing time is 3 min-12 min;
in step S30, the process parameters of the liquid medicine treatment are: ultrasonic frequency is 60 KHz-120 KHz, the liquid medicine proportion is 3% -15%, the circulating filter element is 0.5 um-1 um, and the processing time is 5 min-15 min;
in step S30, the alkaline pH of the cleaning agent used for the liquid medicine treatment is 8-14.
2. A method for cleaning a single crystal silicon carbide substrate wafer as claimed in claim 1, wherein in step S10, the tip water outlet is covered with a flat water outlet.
3. A method for cleaning a single crystal silicon carbide substrate wafer according to claim 1, wherein in the step S10, the rinsing treatment time is 2 to 8 min.
4. A single crystal silicon carbide substrate wafer cleaning method according to claim 1, wherein in step S20, the low frequency pure water ultrasonic tank comprises: ultrasonic board, wafer box.
5. A method for cleaning a single crystal silicon carbide substrate wafer according to claim 1, wherein in step S30, the chemical liquid tank comprises: ultrasonic board, wafer box, circulation filter core.
6. A method for cleaning a single crystal silicon carbide substrate wafer as set forth in claim 1, wherein in the step S40, the time for the QDR treatment cleaning is 5 to 15 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810466773.7A CN108648989B (en) | 2018-05-16 | 2018-05-16 | Method for cleaning single crystal silicon carbide substrate wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810466773.7A CN108648989B (en) | 2018-05-16 | 2018-05-16 | Method for cleaning single crystal silicon carbide substrate wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108648989A CN108648989A (en) | 2018-10-12 |
| CN108648989B true CN108648989B (en) | 2020-12-25 |
Family
ID=63756048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810466773.7A Active CN108648989B (en) | 2018-05-16 | 2018-05-16 | Method for cleaning single crystal silicon carbide substrate wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108648989B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
| CN112871849B (en) * | 2020-12-29 | 2022-08-12 | 北京天科合达半导体股份有限公司 | Cleaning method for removing particles on surface of silicon carbide wafer |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002005331A8 (en) * | 2000-07-08 | 2002-03-28 | Applied Materilas Inc | Removable gripper pads |
| CN1400637A (en) * | 2001-08-06 | 2003-03-05 | 矽统科技股份有限公司 | Chip cleaning device and method |
| WO2009094275A2 (en) * | 2008-01-21 | 2009-07-30 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
| CN102087954A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method |
| CN102451824A (en) * | 2010-10-26 | 2012-05-16 | 株式会社迪思科 | Rotating cleaning device |
| CN102962226A (en) * | 2012-12-06 | 2013-03-13 | 江苏吉星新材料有限公司 | Method for cleaning polished sapphire substrate wafer |
| CN104167351A (en) * | 2014-07-23 | 2014-11-26 | 东莞市天域半导体科技有限公司 | Chemical mechanical cleaning method of SiC epitaxial wafer and special-purpose tools |
| CN106423999A (en) * | 2016-09-23 | 2017-02-22 | 江苏吉星新材料有限公司 | Process for cleaning ground sapphire substrate slice |
| CN106910674A (en) * | 2017-03-02 | 2017-06-30 | 东莞市天域半导体科技有限公司 | A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual |
| TW201801808A (en) * | 2016-04-20 | 2018-01-16 | 迪思科股份有限公司 | Cleaning device capable of fully and finely cleaning plate-like object with simple structure even if being seriously warped |
| CN108022827A (en) * | 2016-11-02 | 2018-05-11 | 株洲中车时代电气股份有限公司 | A kind of silicon-carbide metal pollution treatment method |
-
2018
- 2018-05-16 CN CN201810466773.7A patent/CN108648989B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002005331A8 (en) * | 2000-07-08 | 2002-03-28 | Applied Materilas Inc | Removable gripper pads |
| CN1400637A (en) * | 2001-08-06 | 2003-03-05 | 矽统科技股份有限公司 | Chip cleaning device and method |
| WO2009094275A2 (en) * | 2008-01-21 | 2009-07-30 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
| CN102087954A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method |
| CN102451824A (en) * | 2010-10-26 | 2012-05-16 | 株式会社迪思科 | Rotating cleaning device |
| CN102962226A (en) * | 2012-12-06 | 2013-03-13 | 江苏吉星新材料有限公司 | Method for cleaning polished sapphire substrate wafer |
| CN104167351A (en) * | 2014-07-23 | 2014-11-26 | 东莞市天域半导体科技有限公司 | Chemical mechanical cleaning method of SiC epitaxial wafer and special-purpose tools |
| TW201801808A (en) * | 2016-04-20 | 2018-01-16 | 迪思科股份有限公司 | Cleaning device capable of fully and finely cleaning plate-like object with simple structure even if being seriously warped |
| CN106423999A (en) * | 2016-09-23 | 2017-02-22 | 江苏吉星新材料有限公司 | Process for cleaning ground sapphire substrate slice |
| CN108022827A (en) * | 2016-11-02 | 2018-05-11 | 株洲中车时代电气股份有限公司 | A kind of silicon-carbide metal pollution treatment method |
| CN106910674A (en) * | 2017-03-02 | 2017-06-30 | 东莞市天域半导体科技有限公司 | A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108648989A (en) | 2018-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108648989B (en) | Method for cleaning single crystal silicon carbide substrate wafer | |
| TWI386995B (en) | Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses | |
| KR102658739B1 (en) | Conditioning chamber component | |
| KR20090118917A (en) | Particle removal method and composition | |
| TWI745009B (en) | Plasma etching system | |
| CN111424260B (en) | Chemical vapor deposition equipment with efficient cleaning capability and semiconductor process method | |
| CN110335807B (en) | Silicon wafer cleaning method | |
| CN113675073B (en) | Wafer cleaning method | |
| CN103521474B (en) | Method for cleaning surfaces of sapphire substrate materials by using polishing to replace washing | |
| US20080135069A1 (en) | Method and apparatus for active particle and contaminant removal in wet clean processes in semiconductor manufacturing | |
| CN113736580A (en) | Mixed acid cleaning solution for cleaning and polishing silicon wafer and cleaning method for polished silicon wafer | |
| CN107470266A (en) | The rear cleaning method of oxide wafer in a kind of CMP process | |
| CN104190652A (en) | Cleaning device and method for medium and large-sized sapphire wafers after patterned etching process | |
| CN103643220B (en) | A kind of reduce the method for impurity particle in low pressure boiler tube | |
| JP4456769B2 (en) | Method of cleaning silicon electrode for generating fluorocarbon plasma and method of manufacturing semiconductor device using the same | |
| JP6235471B2 (en) | Seasoning method, plasma processing apparatus, and manufacturing method | |
| CN102489478A (en) | Method for cleaning silicon wafer | |
| CN105097426A (en) | Method for eliminating figure damage defect in wet cleaning | |
| CN109755106B (en) | Wafer cleaning method | |
| CN102672613B (en) | A kind of cleaning method of grinding pad and device | |
| CN102610578A (en) | Matrix type sapphire substrate and preparation method thereof | |
| US20060196526A1 (en) | Methods of spin-on wafer cleaning | |
| CN101752206B (en) | Method for improving grinding particle residue | |
| CN113969396B (en) | Preparation method of control wafer | |
| US9947558B2 (en) | Method for conditioning silicon part |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |