CN108648989A - A kind of single crystal silicon carbide substrate wafer cleaning method - Google Patents
A kind of single crystal silicon carbide substrate wafer cleaning method Download PDFInfo
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- CN108648989A CN108648989A CN201810466773.7A CN201810466773A CN108648989A CN 108648989 A CN108648989 A CN 108648989A CN 201810466773 A CN201810466773 A CN 201810466773A CN 108648989 A CN108648989 A CN 108648989A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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Abstract
The invention discloses a kind of single crystal silicon carbide substrate wafer cleaning methods, include the following steps：Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic-pressure regulating valve is adjusted, sharp mouth water jet is passed water through and beats the chip on ceramic disk, control water flow removes the pollutants such as the metallic of the remaining polishing fluid of plane of crystal and bulky grain；Step S20, low frequency pure water are ultrasonically treated；Step S30, liquid processing；Step S40, QDR processing.Granularity≤1000 of wafer surface 0.5um can be reached after the whole road manufacturing process for cleaning of the present invention, qualification rate is 90% or more, existing cleaning performance is compared to be obviously improved, dust free room is sent into finally to be cleaned, the relatively former technique of the percent of pass of chip promotes 13%~18%, because of the reduction of supplied materials granularity and stability is high so that the dust free room cleaning machine medicament service life extends 25%~30%.
Description
Technical field
The present invention relates to silicon carbide substrate wafer processing technique fields, and in particular to a kind of single crystal silicon carbide substrate chip is clear
Washing method.
Background technology
Silicon carbide is as third generation semi-conducting material, and big with energy gap, disruptive field intensity, thermal conductivity is big, and electronics is full
With drift velocity height, capability of resistance to radiation by force and the characteristics such as good chemical stability, becomes electronic device critical material of new generation.
Trillions of markets can be expedited the emergence of out by having in energy-saving and emission-reduction, national defense construction, electronic information etc..Silicon carbide and making are big simultaneously
Power microwave, power electronics, opto-electronic device important materials GaN between have very small lattice mismatch and coefficient of thermal expansion
Difference so that silicon carbide becomes the important substrate material of wide band gap semiconductor device of new generation.
Silicon carbide wafer as the cleanliness factor on its surface of substrate material directly affect that back segment is graphical and extension processing it is good
The stability of rate and resulting devices.The technique of carborundum crystals processing cuts comprising line, grinds, chamfering, annealing, copper throwing, throwing
Light and 100 grades of dust free room cleanings.And per pass process have corresponding cleaning process for remove the dirty of wafer surface and
Next process is carried out after metal ion.And polishing is the last processing to chip together in substrate processing, is cleaned after polishing
Effect directly determine the supplied materials situation of dust free room wafer cleaning and the cleanliness factor quality on final substrate surface.
The pollutants such as wafer surface remaining slurry, metal ion after polishing.Cleaning method is to throw after traditional polishing
Chip is removed from ceramic disk after light post-processing, the liquid by multiple-grooved cleans, 1,3,5 in Fig. 1；The QDR cleanings for multiple-grooved of arranging in pairs or groups,
2,4,6 in Fig. 1, the entire manufacturing process for cleaning used time was at 1~2 hour.Due to the remaining pollutant characteristic of wafer surface and pollutant
Granular size is in diversity, so that there are processing times is long for traditional cleaning, liquid dosage is more, the particle of wafer surface after cleaning
Spend the problems such as fluctuation quantity is big.
Therefore, it is necessary to a kind of manufacturing process for cleaning time is short, cleaning agent dosage is few, after cleaning, wafer surface particle is few, each chip
Between the high single crystal silicon carbide substrate chip cleaning of stability method.
Invention content
The problem of present invention after the polishing of above-mentioned silicon carbide substrate wafer for cleaning, it is brilliant to provide a kind of single crystal silicon carbide substrate
The clean method of piece, by increasing the preceding prewashed method in road, the new cleaning method for reducing the quantity of dipper and QDR slots is gone
Except the booty particle of wafer surface；The processing time entirely cleaned is reduced, the dosage of cleaning agent is reduced and reduces chip after cleaning
Stability after the particle on surface and raising cleaning between each chip.
Technical solution is used by the present invention solves the above problems：A kind of single crystal silicon carbide substrate wafer cleaning method,
Include the following steps：
Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic pressure tune is adjusted
Valve is saved, sharp mouth water jet is passed water through and beats the chip on ceramic disk, control water flow removes the remaining polishing fluid of plane of crystal
With the pollutants such as the metallic of bulky grain, make each position of chip on the inswept ceramic disk of water by rotating ceramic disk；
Step S20, low frequency pure water are ultrasonically treated：Single crystal silicon carbide substrate chip after step S10 is rinsed is put into low frequency
Pure water ultrasonic tank further removes the pollutant of the bulky grain of single crystal silicon carbide substrate wafer surface；
Step S30, liquid processing：Single crystal silicon carbide substrate chip after step S20 low frequency pure water is ultrasonically treated is put into
In dipper, short grained pollutant is cleaned using cleaning agent；
Step S40, QDR processing：By step S30 liquids, treated that single crystal silicon carbide substrate chip is put into QDR slots, into
The surface clean of row single crystal silicon carbide substrate chip and remaining cleaning.
Further, in step S10, the device for rinsing processing includes：Hydraulic-pressure regulating valve, flat water jet, ceramic disk.
Further, in step S10, flat water jet is cased at sharp mouth water jet.
Further, in step S10, washing time is 2min~8min.
Further, in step S20, low frequency pure water ultrasonic tank includes：Ultrasonic wave plate, wafer case.
Further, in step S20, the technological parameter that low frequency pure water is ultrasonically treated is：Supersonic frequency 10KHz~
40KHz, 40 DEG C~80 DEG C of pure water temperature, processing time 3min~12min.
Further, in step S30, dipper includes：Ultrasonic plate, wafer case, cycle filter core.
Further, in step S30, the technological parameter of liquid processing is：Supersonic frequency 60KHz~120KHz, liquid are matched
Than 3%~15%, filter core 0.5um~1um, processing time 5min~15min are recycled.
Further, in step S30, the alkaline ph values for the cleaning agent that liquid processing uses are 8~14.
Further, in step S40, the time of QDR cleanings is 5min~15min.
It is an advantage of the invention that：
1. processing procedure and low-frequency ultrasonic waves processing are rinsed in the increase of single crystal silicon carbide substrate wafer cleaning method of the present invention
Process eliminates the 4 slots cleaning slot number of original technique, saves the manufacturing process for cleaning time, processing time is made to shorten more than half；
2. single crystal silicon carbide substrate wafer cleaning method of the present invention saves the usage amount of cleaning agent, cleaning agent, save
Cost, is obviously improved the effect of wafer cleaning, improves the effect after cleaning；
3. single crystal silicon carbide substrate wafer cleaning method of the present invention finally cleans the dust free room chip of back segment influence significantly,
The percent of pass for improving eyeglass extends the liquid service life；
4. can reach granularity≤1000 of wafer surface 0.5um after the whole road manufacturing process for cleaning of the present invention, qualification rate exists
90% or more, it compares existing cleaning performance and is obviously improved, be sent into dust free room and finally cleaned, the percent of pass phase of chip
13%~18% is promoted to former technique, because of the reduction of supplied materials granularity and stability is high so that the dust free room cleaning machine medicament service life prolongs
Long 25%~30%.
Description of the drawings
It forms part of this specification, show embodiment party of the invention for further understanding the attached drawing of the present invention
Case, and be used for illustrating preparation flow of the invention together with specification.In the accompanying drawings：
Fig. 1 is cleaning method after traditional polishing；
Fig. 2 is the process flow chart of single crystal silicon carbide substrate wafer cleaning of the present invention；
Fig. 3 is the equipment flowsheet of single crystal silicon carbide substrate wafer cleaning of the present invention；
Figure label：1- liquids rinse bath, 2-QDR rinse baths, 3- liquids rinse bath, 4-QDR rinse baths, 5- liquids are clear
Washing trough, 6-QDR rinse baths, 1A- flushings processing, 2A- low frequency pure water ultrasonic tank, 3A- dippers, 4A-QDR slots, 1a- hydraulic pressure are adjusted
Valve, 2a- sinks, 2b- ultrasonic wave plates, 2c- substrate wafers box, 3a- dippers, 3b- ultrasonic wave plates, 3c substrate wafers box, 3d-
Filter core cycle, 4a-QDR slots, 4b- substrate wafer boxes.
Specific implementation mode
The embodiment of the present invention is described in detail below in conjunction with attached drawing, but the present invention can be defined by the claims
Implement with the multitude of different ways of covering.
Embodiment 1
Single crystal silicon carbide substrate wafer cleaning method, includes the following steps：
Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic pressure tune is adjusted
Valve is saved, the sharp mouth water jet for being cased with flat water jet is passed water through, beats the chip on ceramic disk, control water flow removal is brilliant
The pollutants such as the metallic of the remaining polishing fluid in body surface face and bulky grain make crystalline substance on the inswept ceramic disk of water by rotating ceramic disk
Each position of piece, washing time 2min, wherein the device for rinsing processing includes：Hydraulic-pressure regulating valve, flat water jet, pottery
Porcelain dish；
Step S20, low frequency pure water are ultrasonically treated：Single crystal silicon carbide substrate chip after step S10 is rinsed is put into low frequency
Pure water ultrasonic tank, low frequency pure water ultrasonic tank include：Ultrasonic wave plate, wafer case further remove single crystal silicon carbide substrate chip table
The pollutant of the bulky grain in face, the technological parameter that low frequency pure water is ultrasonically treated are：Supersonic frequency 10KHz, 40 DEG C of pure water temperature, system
Journey time 12min；
Step S30, liquid processing：Single crystal silicon carbide substrate chip after step S20 low frequency pure water is ultrasonically treated is put into
In dipper, dipper includes：Ultrasonic plate, wafer case, cycle filter core, short grained pollutant, liquid are cleaned using cleaning agent
The technological parameter of processing is：Supersonic frequency 60KHz, liquid proportion 12% recycle filter core 1um, processing time 12min, at liquid
The alkaline ph values for managing the cleaning agent used are 8；
Step S40, QDR processing：By step S30 liquids, treated that single crystal silicon carbide substrate chip is put into QDR slots, into
The time of the surface clean of row single crystal silicon carbide substrate chip and remaining cleaning, cleaning is 8min.
Single crystal silicon carbide substrate chip after the cleaning of the present embodiment method, granularity≤1000 of wafer surface 0.5um,
Qualification rate compares existing cleaning performance and is obviously improved 93%；It is sent into dust free room finally to be cleaned, chip passes through
The relatively former technique of rate promotes 14%, and because of the reduction of supplied materials granularity and stability height makes the dust free room cleaning machine medicament service life extend
25%.
Embodiment 2
Single crystal silicon carbide substrate wafer cleaning method, includes the following steps：
Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic pressure tune is adjusted
Valve is saved, the sharp mouth water jet for being cased with flat water jet is passed water through, beats the chip on ceramic disk, control water flow removal is brilliant
The pollutants such as the metallic of the remaining polishing fluid in body surface face and bulky grain make crystalline substance on the inswept ceramic disk of water by rotating ceramic disk
Each position of piece, washing time 4min, wherein the device for rinsing processing includes：Hydraulic-pressure regulating valve, flat water jet, pottery
Porcelain dish；
Step S20, low frequency pure water are ultrasonically treated：Single crystal silicon carbide substrate chip after step S10 is rinsed is put into low frequency
Pure water ultrasonic tank, low frequency pure water ultrasonic tank include：Ultrasonic wave plate, wafer case further remove single crystal silicon carbide substrate chip table
The pollutant of the bulky grain in face, the technological parameter that low frequency pure water is ultrasonically treated are：Supersonic frequency 20KHz, 70 DEG C of pure water temperature, system
Journey time 3min；
Step S30, liquid processing：Single crystal silicon carbide substrate chip after step S20 low frequency pure water is ultrasonically treated is put into
In dipper, dipper includes：Ultrasonic plate, wafer case, cycle filter core, short grained pollutant, liquid are cleaned using cleaning agent
The technological parameter of processing is：Supersonic frequency 80KHz, liquid proportion 3% recycle filter core 1um, processing time 5min, liquid processing
The alkaline ph values of the cleaning agent used are 9；
Step S40, QDR processing：By step S30 liquids, treated that single crystal silicon carbide substrate chip is put into QDR slots, into
The time of the surface clean of row single crystal silicon carbide substrate chip and remaining cleaning, cleaning is 5min.
Single crystal silicon carbide substrate chip after the cleaning of the present embodiment method, granularity≤1000 of wafer surface 0.5um,
Qualification rate compares existing cleaning performance and is obviously improved 92%；It is sent into dust free room finally to be cleaned, chip passes through
The relatively former technique of rate promotes 13%, and because of the reduction of supplied materials granularity and stability height makes the dust free room cleaning machine medicament service life extend
26%.
Embodiment 3
Single crystal silicon carbide substrate wafer cleaning method, includes the following steps：
Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic pressure tune is adjusted
Valve is saved, the sharp mouth water jet for being cased with flat water jet is passed water through, beats the chip on ceramic disk, control water flow removal is brilliant
The pollutants such as the metallic of the remaining polishing fluid in body surface face and bulky grain make crystalline substance on the inswept ceramic disk of water by rotating ceramic disk
Each position of piece, washing time 6min, wherein the device for rinsing processing includes：Hydraulic-pressure regulating valve, flat water jet, pottery
Porcelain dish；
Step S20, low frequency pure water are ultrasonically treated：Single crystal silicon carbide substrate chip after step S10 is rinsed is put into low frequency
Pure water ultrasonic tank, low frequency pure water ultrasonic tank include：Ultrasonic wave plate, wafer case further remove single crystal silicon carbide substrate chip table
The pollutant of the bulky grain in face, the technological parameter that low frequency pure water is ultrasonically treated are：Supersonic frequency 40KHz, 50 DEG C of pure water temperature, system
Journey time 5min；
Step S30, liquid processing：Single crystal silicon carbide substrate chip after step S20 low frequency pure water is ultrasonically treated is put into
In dipper, dipper includes：Ultrasonic plate, wafer case, cycle filter core, short grained pollutant, liquid are cleaned using cleaning agent
The technological parameter of processing is：Supersonic frequency 100KHz, liquid proportion 15% recycle filter core 0.5um, processing time 8min, liquid
The alkaline ph values of the cleaning agent used are handled 13；
Step S40, QDR processing：By step S30 liquids, treated that single crystal silicon carbide substrate chip is put into QDR slots, into
The time of the surface clean of row single crystal silicon carbide substrate chip and remaining cleaning, cleaning is 15min.
Single crystal silicon carbide substrate chip after the cleaning of the present embodiment method, granularity≤1000 of wafer surface 0.5um,
Qualification rate compares existing cleaning performance and is obviously improved 91%；It is sent into dust free room finally to be cleaned, chip passes through
The relatively former technique of rate promotes 14%, and because of the reduction of supplied materials granularity and stability height makes the dust free room cleaning machine medicament service life extend
29%.
Embodiment 4
Single crystal silicon carbide substrate wafer cleaning method, includes the following steps：
Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic pressure tune is adjusted
Valve is saved, sharp mouth water jet is passed water through, beats the chip on ceramic disk, control water flow removes the remaining polishing fluid of plane of crystal
With the pollutants such as the metallic of bulky grain, makes each position of chip on the inswept ceramic disk of water by rotating ceramic disk, rinse
Time is 8min, wherein the device for rinsing processing includes：Hydraulic-pressure regulating valve, flat water jet, ceramic disk；
Step S20, low frequency pure water are ultrasonically treated：Single crystal silicon carbide substrate chip after step S10 is rinsed is put into low frequency
Pure water ultrasonic tank, low frequency pure water ultrasonic tank include：Ultrasonic wave plate, wafer case further remove single crystal silicon carbide substrate chip table
The pollutant of the bulky grain in face, the technological parameter that low frequency pure water is ultrasonically treated are：Supersonic frequency 30KHz, 80 DEG C of pure water temperature, system
Journey time 10min；
Step S30, liquid processing：Single crystal silicon carbide substrate chip after step S20 low frequency pure water is ultrasonically treated is put into
In dipper, dipper includes：Ultrasonic plate, wafer case, cycle filter core, short grained pollutant, liquid are cleaned using cleaning agent
The technological parameter of processing is：Supersonic frequency 120KHz, liquid proportion 5% recycle filter core 0.5um, processing time 15min, liquid
The alkaline ph values of the cleaning agent used are handled 14；
Step S40, QDR processing：By step S30 liquids, treated that single crystal silicon carbide substrate chip is put into QDR slots, into
The time of the surface clean of row single crystal silicon carbide substrate chip and remaining cleaning, cleaning is 12min.
Single crystal silicon carbide substrate chip after the cleaning of the present embodiment method, granularity≤1000 of wafer surface 0.5um,
Qualification rate compares existing cleaning performance and is obviously improved 93%；It is sent into dust free room finally to be cleaned, chip passes through
The relatively former technique of rate promotes 16%, and because of the reduction of supplied materials granularity and stability height makes the dust free room cleaning machine medicament service life extend
27%.
Embodiment 5
Single crystal silicon carbide substrate wafer cleaning method, includes the following steps：
Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic pressure tune is adjusted
Valve is saved, the sharp mouth water jet for being cased with flat water jet is passed water through, beats the chip on ceramic disk, control water flow removal is brilliant
The pollutants such as the metallic of the remaining polishing fluid in body surface face and bulky grain make crystalline substance on the inswept ceramic disk of water by rotating ceramic disk
Each position of piece, washing time 5min, wherein the device for rinsing processing includes：Hydraulic-pressure regulating valve, flat water jet, pottery
Porcelain dish；
Step S20, low frequency pure water are ultrasonically treated：Single crystal silicon carbide substrate chip after step S10 is rinsed is put into low frequency
Pure water ultrasonic tank, low frequency pure water ultrasonic tank include：Ultrasonic wave plate, wafer case further remove single crystal silicon carbide substrate chip table
The pollutant of the bulky grain in face, the technological parameter that low frequency pure water is ultrasonically treated are：Supersonic frequency 20KHz, 60 DEG C of pure water temperature, system
Journey time 8min；
Step S30, liquid processing：Single crystal silicon carbide substrate chip after step S20 low frequency pure water is ultrasonically treated is put into
In dipper, dipper includes：Ultrasonic plate, wafer case, cycle filter core, short grained pollutant, liquid are cleaned using cleaning agent
The technological parameter of processing is：Supersonic frequency 90KHz, liquid proportion 9% recycle filter core 1um, processing time 10min, liquid processing
The alkaline ph values of the cleaning agent used are 11；
Step S40, QDR processing：By step S30 liquids, treated that single crystal silicon carbide substrate chip is put into QDR slots, into
The time of the surface clean of row single crystal silicon carbide substrate chip and remaining cleaning, cleaning is 10min.
Single crystal silicon carbide substrate chip after the cleaning of the present embodiment method, granularity≤1000 of wafer surface 0.5um,
Qualification rate compares existing cleaning performance and is obviously improved 95%；It is sent into dust free room finally to be cleaned, chip passes through
The relatively former technique of rate promotes 18%, and because of the reduction of supplied materials granularity and stability height makes the dust free room cleaning machine medicament service life extend
30%.
It these are only the preferred embodiment of the present invention, be not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.Any modification made by all within the spirits and principles of the present invention,
Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of single crystal silicon carbide substrate wafer cleaning method, which is characterized in that include the following steps：
Step S10, flushing processing：Single crystal silicon carbide substrate chip after polishing is put into ceramic disk, hydraulic-pressure regulating valve is adjusted,
It passes water through sharp mouth water jet and beats the chip on ceramic disk, control water flow removes the remaining polishing fluid of plane of crystal and big
The pollutants such as the metallic of grain make each position of chip on the inswept ceramic disk of water by rotating ceramic disk；
Step S20, low frequency pure water are ultrasonically treated：Single crystal silicon carbide substrate chip after step S10 is rinsed is put into low frequency pure water
Ultrasonic tank further removes the pollutant of the bulky grain of single crystal silicon carbide substrate wafer surface；
Step S30, liquid processing：Single crystal silicon carbide substrate chip after step S20 low frequency pure water is ultrasonically treated is put into liquid
In slot, short grained pollutant is cleaned using cleaning agent；
Step S40, QDR processing：By step S30 liquids, treated that single crystal silicon carbide substrate chip is put into QDR slots, carries out single
The surface clean of brilliant silicon carbide substrate wafer and remaining cleaning.
2. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S10
Rinsing the device handled includes：Hydraulic-pressure regulating valve, flat water jet, ceramic disk.
3. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S10
It is cased with flat water jet at sharp mouth water jet.
4. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S10
Washing time is 2min~8min.
5. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S20
Low frequency pure water ultrasonic tank includes：Ultrasonic wave plate, wafer case.
6. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S20
Low frequency pure water be ultrasonically treated technological parameter be：Supersonic frequency 10KHz~40KHz, 40 DEG C~80 DEG C of pure water temperature, processing time
3min~12min.
7. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S30
Dipper includes：Ultrasonic plate, wafer case, cycle filter core.
8. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S30
Liquid processing technological parameter be：Supersonic frequency 60KHz~120KHz, liquid proportion 3%~15%, cycle filter core 0.5um~
1um, processing time 5min~15min.
9. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that described in step S30
The alkaline ph values for the cleaning agent that liquid processing uses are 8~14.
10. single crystal silicon carbide substrate wafer cleaning method according to claim 1, which is characterized in that in step S40, institute
The time for stating QDR cleanings is 5min~15min.
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| CN112871849A (en) * | 2020-12-29 | 2021-06-01 | 北京天科合达半导体股份有限公司 | Cleaning method for removing particles on surface of silicon carbide wafer |
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| CN106423999A (en) * | 2016-09-23 | 2017-02-22 | 江苏吉星新材料有限公司 | Process for cleaning ground sapphire substrate slice |
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| CN106910674A (en) * | 2017-03-02 | 2017-06-30 | 东莞市天域半导体科技有限公司 | A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual |
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| WO2021043167A1 (en) * | 2019-09-02 | 2021-03-11 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single-crystal polished wafer substrate |
| CN112871849A (en) * | 2020-12-29 | 2021-06-01 | 北京天科合达半导体股份有限公司 | Cleaning method for removing particles on surface of silicon carbide wafer |
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