CN109727860A - A method of preparing silicon carbide superjunction diode - Google Patents
A method of preparing silicon carbide superjunction diode Download PDFInfo
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- CN109727860A CN109727860A CN201711041101.3A CN201711041101A CN109727860A CN 109727860 A CN109727860 A CN 109727860A CN 201711041101 A CN201711041101 A CN 201711041101A CN 109727860 A CN109727860 A CN 109727860A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 83
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 31
- 238000000407 epitaxy Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 22
- 229910001868 water Inorganic materials 0.000 claims description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- 238000003763 carbonization Methods 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- -1 silicon oxide compound Chemical class 0.000 claims description 3
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 2
- 238000010306 acid treatment Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 230000005404 monopole Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Abstract
The present invention provides a kind of methods for preparing silicon carbide superjunction diode, and described method includes following steps: 1) cleaning sic material 2) in the mask layer 13 of 12 upper surface of epitaxial film preparation etching silicon carbide；3) it is patterned on mask layer 13 and prepares patterned exposure mask 14, it is rear to carry out silicon carbide etching groove；4) secondary epitaxy growth, growing silicon carbide film 16 are carried out；5) be carbonized silicon etching or chemically mechanical polishing, carries out other technique processing afterwards, obtains silicon carbide superjunction diode 26.Preparation method of the present invention forms super-junction structure in the drift region of silicon carbide diode by secondary epitaxy technology, utilize charge balance concept, so that device voltage endurance capability is only related with drift region thickness, it is unrelated with drift doping concentration, drift doping concentration greatly improved, two kinds of hole, electronics carriers participation conductions are introduced, the on state resistance of silicon carbide diode is greatly reduced, reduces device on-state loss.
Description
Technical field
The present invention provides a kind of preparation methods of semiconductor devices, and in particular to a kind of to be prepared using secondary epitaxy technology
The method of silicon carbide superjunction diode.
Background technique
Carbofrax material is with band gap is wide, disruptive field intensity is high, thermal conductivity is high, saturated electrons migration rate is high, physical chemistry
The characteristics such as performance stabilization, are applicable to high temperature, high frequency, high-power and extreme environment.Silicon carbide diode is sufficiently to realize already
The silicon carbide device of commercialization.
Silicon carbide diode has monopole type device and bipolar device two major classes at present, and monopole type device is in working condition down
Only a kind of device of current-carrying subconductivity, such as: Schottky diode, junction barrier schottky diode etc.；Bipolar device is
There are two types of the devices of current-carrying subconductivity in the operating condition, such as: PiN diode.Monopole type device cut-in voltage is small, deficiency
It is in when preparing high tension apparatus, drift layer thickness increases therewith, and on state resistance is caused to increase, and device on-state loss is larger；It is double
There is polar form device the conductivity modulation effect of few son can reduce on state resistance, but due to the self-built potential difference of the PN junction of silicon carbide
Larger, cut-in voltage is up to 3V, has also resulted in biggish on-state loss.
Summary of the invention
The object of the present invention is to provide a kind of method for preparing silicon carbide superjunction diode, this method passes through secondary epitaxy
Technology forms super-junction structure in the drift region of silicon carbide diode, using charge balance concept so that device voltage endurance capability only with
Drift region thickness is related, unrelated with drift doping concentration, can greatly improve drift doping concentration in device preparation, and
Two kinds of hole, electronics carriers participation conductions are introduced, silicon carbide diode, especially SiC schottky diode are substantially reduced
The on state resistance of equal unipolar devices, reduces device on-state loss.
To achieve the goals above, the present invention takes following technical scheme:
A method of silicon carbide superjunction diode being prepared, described method includes following steps:
1) cleaning sic material
2) in the mask layer 13 of 12 upper surface of epitaxial film preparation etching silicon carbide；
3) it is patterned on mask layer 13 after preparing patterned exposure mask 14, carries out silicon carbide etching groove；
4) secondary epitaxy growth, growing silicon carbide film 16 are carried out；
5) light after carbonization silicon etching or chemical machinery are thrown, carries out other technique processing, obtains silicon carbide superjunction diode 26.
Preferably, the carbofrax material includes the 4H-SiC or 6H-SiC of N-shaped or p-type, 12 thickness 0.1 of epitaxial film
μm -500 μm, 1 × 1013~1 × 1021cm-3 of doping concentration.
Preferably, the cleaning includes the following steps:
A, carbofrax material is placed on the bracket after cleaning, drying, with 250 DEG C of sulfuric acid and hydrogen peroxide mixed solution
After cleaning 15min, hot water injection；
B, bracket is put into the mixed solution of ammonium hydroxide, hydrogen peroxide and deionized water after 15min, hot water injection；
C, bracket is put into the mixed solution of hydrochloric acid, hydrogen peroxide and deionized water after 15min, hot water injection；
D, with after 10% 5~10min of hydrofluoric acid treatment, 20min is rinsed with deionized water.
Preferably, the ratio of sulfuric acid and hydrogen peroxide is 3:1 in the sulfuric acid and hydrogen peroxide mixed solution；The ammonium hydroxide, dioxygen
Water and the ratio of deionized water are 1:1:5~1:1:7；The ratio of the hydrochloric acid, hydrogen peroxide and deionized water is 1:1:5.
Preferably, the mask layer 13 includes silicon, silicon oxide compound, silicon-nitrogen compound, metal simple-substance single-layer or multi-layer
Laminated film, every layer film with a thickness of 0.001-200 μm.
Preferably, the silicon oxide compound includes BET specific surface area (㎡/g) it is that 110~280, tap density (g/l) is
110~290, drying loss (%) is 0.01~2, loss on ignition (%) is 0.1~4.0, pH3~7, carbon content (%) 0.5~4
Silica.
Preferably, the silica includes to pyrogenic silica and-[O-Si (R2)】nThe poly- silicon of ring-type of type is supported
Alkane reacts obtained silanized silica and carries out structurally-modified silica obtained；The R is the alkyl of C1~C6
Group；The n is 3~9；It is described it is structurally-modified include being ground in ball mill.
Preferably, the patterned figure includes selecting from interdigital structure, parallel strip, circular ring shape and square mesa
One or more of figures out, the dimension of picture are 0.01 μm of -50cm.
Preferably, the etching depth of the silicon carbide etching groove is 0.001 μm of -50cm.
Preferably, the preparation method includes secondary epitaxy growth；The secondary epitaxy growth includes carrying out p-type or N-shaped
Silicon carbide epitaxial film 16 is grown, and fills groove；The p-type or N-shaped silicon carbide epitaxial film 16 with a thickness of 0.001 μm-
50cm, doping concentration are 1 × 1013-1 × 1021cm-3.
Preferably, in step 5), the etching or chemically mechanical polishing depth are 0.001 μm of -50cm, should be not more than secondary
The p-type of epitaxial growth or the thickness of N-shaped silicon carbide epitaxial film 16.
Preferably, other described techniques include photoetching, etching, film deposition, Ohmic contact, ion implanting and high annealing
A variety of microelectronic component processing technologys.
Preferably, the silicon carbide superjunction diode includes SiC schottky diode (SBD), silicon carbide junction barrier Xiao
Special based diode (JBS), silicon carbide mixing PN junction Schottky diode (MPS) and silicon carbide PiN diode.
Compared with the latest prior art, technical solution provided by the invention has following excellent effect:
Preparation method provided by the invention forms superjunction knot in the drift region of silicon carbide diode by secondary epitaxy technology
Structure takes full advantage of charge balance concept, keeps device voltage endurance capability only related with drift region thickness, with drift doping concentration without
It closes, drift doping concentration greatly improved, and introduce two kinds of hole, electronics carriers participation conductions, greatly reduce carbonization
The on state resistance of the unipolar devices such as silicon diode, especially SiC schottky diode reduces device on-state loss.
Detailed description of the invention:
Fig. 1: the flow chart of method provided by the invention；
Fig. 2: the cross-sectional view of carbofrax material provided by the invention；
Fig. 3: the cross-sectional view of the mask layer of carbofrax material surface deposition etching silicon carbide provided by the invention；
Fig. 4: the cross-sectional view of the mask layer of graphical etching silicon carbide provided by the invention；
Fig. 5: the cross-sectional view provided by the invention for carrying out forming sample 23 after carbonization silicon etching；
Fig. 6: provided by the invention by secondary epitaxy technology growth carborundum films 16, the cross section for forming sample 24 shows
It is intended to；
Fig. 7: provided by the invention that sample 24 is carried out secondary carbonization silicon etching or chemically-mechanicapolish polished to form super-junction structure
15, obtain the cross-sectional view of sample 25；
Fig. 8: provided by the invention to continue the processing of other techniques, the cross section for forming silicon carbide superjunction diode 26 shows
It is intended to.Wherein: 10 carbofrax materials；11 silicon carbide substrates；12 silicon carbide epitaxial films；The mask layer of 13 etching silicon carbides；21
Gained sample after the mask layer of deposit etching silicon carbide；14 patterned mask layers；Gained sample after 22 Patterned masking layers；23
Carry out gained sample after carbonization silicon etching；16 pass through the carborundum films of secondary epitaxy technology growth；24 grooves are filled rear institute
Obtain sample 24；After 15 pairs of samples 24 carry out carbonization silicon etching or chemically mechanical polishing, in the super-junction structure that drift region obtains；25 shapes
At gained sample after super-junction structure；26 continue other techniques processing gained silicon carbide superjunction diode.
Specific embodiment
A method of silicon carbide superjunction diode being prepared using secondary epitaxy technology, described method includes following steps:
1) cleaning sic material 10, the carbofrax material 10 include substrate 11 and epitaxial film 12, the silicon carbide material
Substrate 11 in material 10 is N-shaped 4H-SiC, and thickness is about 380 μm, and n-type doping impurity is nitrogen (N), doping concentration is about 5 ×
1018cm-3；Epitaxial film 12 in the carbofrax material 10 is N-shaped 4H-SiC, and thickness is about 12 μm, and n-type doping impurity is
Nitrogen (N), doping concentration are about 8 × 1015cm-3；
Carbofrax material 10 is cleaned using RCA standard cleaning method, specific cleaning step is as follows:
A, hydrofluoric acid solution (HF:H is prepared2O=1:10)；
B, sample holder cleaning, drying are stand-by；
C, it takes silicon carbide sample 10 to be put on bracket, puts well in sequence；
D, match 3# liquid (sulfuric acid: H2O2=3:1), while another container is to boil water；
E, it is boiled and is washed with 3# liquid, 15min is heated to 250 DEG C, has carried bracket slightly cool a moment；
F, bracket is put into hot water, is washed by water；
G, 1# liquid (ammonium hydroxide: H is prepared2O2: H2O=1:1:5-1:1:7), the above two are poured into hot water, heat 75~85 DEG C,
10~20min of time (removes removing heavy-metal impurities using complexing), takes out sample holder, is put into 1# liquid, 15min, taking-up is put
Into hot water, bath；
H, 2# liquid (HCl:H is prepared2O2: H2O=1:1:5) the above two are poured into hot water；
I, silicon wafer is taken out, 2# liquid is put into, 15min takes out in putting hot water, bath；
J, 10% 5~10s of HF time removes 10 surface oxide layer of silicon carbide sample；
K, deionized water washing time 20min.
2) in the mask layer 13 of the upper surface of epitaxial film 12 preparation etching silicon carbide, sample 21 is formed, as shown in figure 3,
Mask layer 13 is that metal Al is obtained with a thickness of 2 μm using magnetron sputtering technique.
3) it is patterned on the mask layer 13 of etching silicon carbide using photoetching technique, is with photoresist AZ6130,
Patterned exposure mask 14 is prepared by lithographic technique, figure is the square of 2 μm of 2 μ m, forms sample 22；
4) silicon carbide etching groove is carried out to sample 22, etching depth is 12 μm, obtains sample 23；
5) trench fill is carried out to sample 23 using secondary epitaxy technology, secondary epitaxy film is p-type silicon carbide, and p-type is mixed
Impurity is aluminium (Al), and doping concentration is 1 × 1016cm-3, obtain sample 24；
6) carbonization silicon etching or chemically mechanical polishing being carried out to sample 24, etching or chemically mechanical polishing depth are 12 μm,
Super-junction structure 15 is formed, sample 25 is obtained；
7) high temperature tension and annealing, field plate oxide deposition, field plate oxide layer opening, just are successively carried out to sample 25
The techniques processing such as the preparation of face Schottky contact electrode, the preparation of back surface ohmic contacts electrode, obtain two pole of silicon carbide superjunction Schottky
Pipe 26.
One of the above description is merely a specific embodiment, but the scope of protection of the present invention is not limited thereto, appoints
The variation or replacement what those familiar with the art can readily occur within the technical scope of the present disclosure, all
It is covered by the protection scope of the present invention.
Claims (11)
1. a kind of method for preparing silicon carbide superjunction diode, which is characterized in that described method includes following steps:
1) cleaning sic material
2) in the mask layer 13 of 12 upper surface of epitaxial film preparation etching silicon carbide；
3) it is patterned on mask layer 13 after preparing patterned exposure mask 14, carries out silicon carbide etching groove；
4) secondary epitaxy growth, growing silicon carbide film 16 are carried out；
5) light after carbonization silicon etching or chemical machinery are thrown, carries out other technique processing, obtains silicon carbide superjunction diode 26.
2. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that the silicon carbide
Material includes the 4H-SiC or 6H-SiC of N-shaped or p-type, and the epitaxial film 12 is 0.1 μm -500 μm thick, doping concentration 1 × 1013~
1×1021cm-3。
3. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that the cleaning packet
Include following steps:
A, carbofrax material is placed on the bracket after cleaning, drying, is cleaned with 250 DEG C of sulfuric acid and hydrogen peroxide mixed solution
After 15min, hot water injection；
B, bracket is put into the mixed solution of ammonium hydroxide, hydrogen peroxide and deionized water after 15min, hot water injection；
C, bracket is put into the mixed solution of hydrochloric acid, hydrogen peroxide and deionized water after 15min, hot water injection；
D, with after 10% 5~10min of hydrofluoric acid treatment, 20min is rinsed with deionized water.
4. a kind of method for preparing silicon carbide superjunction diode according to claim 3, which is characterized in that the sulfuric acid and
The ratio of sulfuric acid and hydrogen peroxide is 3:1 in hydrogen peroxide mixed solution；The ratio of the ammonium hydroxide, hydrogen peroxide and deionized water be 1:1:5~
1:1:7；The ratio of the hydrochloric acid, hydrogen peroxide and deionized water is 1:1:5.
5. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that the mask layer
13 include silicon, silicon oxide compound, silicon-nitrogen compound, metal simple-substance single-layer or multi-layer laminated film, every layer film with a thickness of
0.001-200μm。
6. the method according to claim 1 for preparing silicon carbide superjunction diode, which is characterized in that the patterned figure
Shape includes the one or more of figures selected from interdigital structure, parallel strip, circular ring shape and square mesa, the graphic scale
Very little is 0.01 μm of -50cm.
7. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that the silicon carbide
The etching depth of etching groove is 0.001 μm of -50cm.
8. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that the preparation side
Method includes secondary epitaxy growth；The secondary epitaxy growth includes carrying out p-type or the growth of N-shaped silicon carbide epitaxial film 16, filling
Groove；The p-type or N-shaped silicon carbide epitaxial film 16 with a thickness of 0.001 μm of -50cm, doping concentration is 1 × 1013-1×
1021cm-3。
9. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that in step 5),
The etching or chemically mechanical polishing depth are 0.001 μm of -50cm, should be no more than the p-type or N-shaped silicon carbide of secondary epitaxy growth
The thickness of epitaxial film 16.
10. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that it is described other
Technique includes photoetching, etching, film deposition, Ohmic contact, ion implanting and a variety of microelectronic component processing technologys of high annealing.
11. a kind of method for preparing silicon carbide superjunction diode according to claim 1, which is characterized in that the carbonization
Silicon superjunction diode includes SiC schottky diode (SBD), silicon carbide junction barrier schottky diodes (JBS), silicon carbide
Mix PN junction Schottky diode (MPS) and silicon carbide PiN diode.
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| CN201711041101.3A CN109727860A (en) | 2017-10-30 | 2017-10-30 | A method of preparing silicon carbide superjunction diode |
| PCT/CN2018/120138 WO2019086049A1 (en) | 2017-10-30 | 2018-12-10 | Method for preparing silicon carbide super-junction diode |
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| CN201711041101.3A CN109727860A (en) | 2017-10-30 | 2017-10-30 | A method of preparing silicon carbide superjunction diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111073649A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院半导体研究所 | Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method |
| CN111584350A (en) * | 2020-05-25 | 2020-08-25 | 芜湖启迪半导体有限公司 | Filling method of SiC epitaxial trench and trench filling structure prepared by method |
| CN113643970A (en) * | 2021-08-09 | 2021-11-12 | 重庆伟特森电子科技有限公司 | Manufacturing method of silicon carbide semiconductor device |
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| US6768138B1 (en) * | 2002-02-20 | 2004-07-27 | Shindengen Electric Manufacturing Co., Ltd. | Diode element |
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| CN106340453A (en) * | 2015-07-07 | 2017-01-18 | 北大方正集团有限公司 | Diode preparation method and diode |
| CN105529246A (en) * | 2015-12-03 | 2016-04-27 | 中国科学院半导体研究所 | Method for preparing silicon carbide super-junction structure through laser etching |
| CN106910674A (en) * | 2017-03-02 | 2017-06-30 | 东莞市天域半导体科技有限公司 | A kind of cleaning method for removing SiC epitaxial wafer metallic pollution or residual |
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| CN111584350A (en) * | 2020-05-25 | 2020-08-25 | 芜湖启迪半导体有限公司 | Filling method of SiC epitaxial trench and trench filling structure prepared by method |
| CN111584350B (en) * | 2020-05-25 | 2022-08-30 | 安徽长飞先进半导体有限公司 | Filling method of SiC epitaxial trench and trench filling structure prepared by method |
| CN113643970A (en) * | 2021-08-09 | 2021-11-12 | 重庆伟特森电子科技有限公司 | Manufacturing method of silicon carbide semiconductor device |
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