CN107331616A - A kind of trench junction barrier schottky diode and preparation method thereof - Google Patents
A kind of trench junction barrier schottky diode and preparation method thereof Download PDFInfo
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- CN107331616A CN107331616A CN201710463915.XA CN201710463915A CN107331616A CN 107331616 A CN107331616 A CN 107331616A CN 201710463915 A CN201710463915 A CN 201710463915A CN 107331616 A CN107331616 A CN 107331616A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052681 coesite Inorganic materials 0.000 claims description 18
- 229910052906 cristobalite Inorganic materials 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 229910052682 stishovite Inorganic materials 0.000 claims description 18
- 229910052905 tridymite Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 230000005684 electric field Effects 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 47
- 150000002500 ions Chemical class 0.000 description 26
- 238000005516 engineering process Methods 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
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- 238000001259 photo etching Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
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- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Abstract
The present invention provides a kind of preparation method of trench junction barrier schottky diode, including：Step 1: the substrate for making devices is provided, and in substrate face grown epitaxial layer；Step 2: fabricating yard limits ring region and the main interface of preparation on epitaxial layer, the main interface of preparation is used for the first ion implanting of offer；Step 3: etching junction barrier groove on the epitaxial layer in addition to field limiting ring area, wherein etching main knot groove in the main interface of preparation, and the second ion implanting is carried out to junction barrier groove and main knot groove；Step 4: making Ohmic contact in substrate back；Step 5: making passivation layer and Schottky contacts in device front；Step 6: making metal electrode in device front and being passivated.The present invention also provides a kind of trench junction barrier schottky diode.The present invention can reduce main knot electric field building-up effect while effectively shielding Schottky surface field, longitudinally increase main junction area, lift voltage endurance.
Description
Technical field
The present invention relates to technical field of semiconductor device, more particularly to a kind of trench junction barrier schottky diode and its system
Make method.
Background technology
Modern science and technology is to the volume of semiconductor power device, and reliability is pressure-resistant, and higher want constantly is proposed in terms of power consumption
Ask.With the diminution of transistor feature size, due to the limitation of the physics laws such as short-channel effect and cost of manufacture, main flow silicon substrate
Material is just developing into 10 nanometer technology nodes with CMOS technology and is difficult to continue to lift up.Carborundum has the forbidden band bigger than silicon wide
Degree, has higher doping concentration and smaller epitaxy layer thickness compared to the Si power device of equal stress levels, therefore positive
Conducting resistance can be greatly reduced, and power attenuation is greatly reduced；Meanwhile, carborundum has higher thermal conductivity and high temperature resistant
Ability, is adapted to the high-power utilization of high current, can reduce the requirement of heat dissipation equipment, reduces equipment volume, improves reliability, reduces
Cost.So carborundum is considered as IC semiconductor material of new generation, have broad application prospects.
In silicon carbide diode, groove-shaped junction barrier schottky structure (TJBS) is junction barrier schottky (JBS) structure
A kind of improved structure, the junction barrier of formation is deep into device inside by the structure by carrying out p-type injection after grooving again, can
Schottky surface field is further reduced, effectively suppresses Schottky barrier reduction effect, excludes tunnelling current and electricity is blocked to highest
The limitation of pressure, has very big advantage in the silicon carbide diode field of high speed, high withstand voltage.
And in the prior art, during design junction barrier schottky (JBS) diode component, consider for fabrication error, it is
Ensure that Schottky electrode metal is completely covered in PN junction barrier region, the PN junction of outermost will be wider than the PN junction of other positions, referred to as lead
Knot；But for groove-shaped junction barrier schottky diode, typically P injects to form knot gesture again after the whole groovings in whole main interface
Build, main junction depth enters device inside, then when applying reverse biased, corner is because PN junction radius of curvature is small, and easily formation electric field gathers
Collection, punctures often and prematurely occurs in Zhu Jie corners, rather than the PN junction of corner does not exhaust fully also, causes device to have
Effect undertakes high backward voltage using main knot.If injecting to be formed without grooving, this PN junction potential barrier can be because PN junction position
Not deep enough device inside and influence its electric field shielding effect.
Therefore, need a kind of novel groove type junction barrier schottky structure (TJBS) badly, solve Zhu Jie corners and easily occur electricity
The problem of field breakdown, improve the performance of groove-shaped junction barrier schottky diode.
The content of the invention
Trench junction barrier schottky diode that the present invention is provided and preparation method thereof, can be for traditional in the prior art
Main junction structure easily causes the deficiency that electric field is assembled, and effectively eliminates the problem of easily electric field breakdown occurs for main knot.
In a first aspect, the present invention provides a kind of preparation method of trench junction barrier schottky diode, including：
Step 1: the substrate for making devices is provided, and in substrate face grown epitaxial layer；
Step 2: fabricating yard limits ring region and the main interface of preparation on said epitaxial layer there, the main interface of preparation is used to provide
First ion implanting；
Step 3: junction barrier groove is etched on the epitaxial layer in addition to the field limiting ring area, wherein described pre-
Standby main interface etches main knot groove, and carries out the second ion implanting to the junction barrier groove and the main knot groove；
Step 4: making Ohmic contact in the substrate back；
Step 5: making passivation layer and Schottky contacts in device front；
Step 6: making metal electrode in device front and being passivated.
Alternatively, the substrate of above-mentioned device is N+- SiC substrate, the epitaxial layer is N-- SiC epitaxial layer.
Alternatively, above-mentioned steps two and the step 3 can be exchanged.
Alternatively, the second ion implanting in the first ion implanting and the step 3 in above-mentioned steps two be Al from
Son injection.
Alternatively, the energy and dosage of above-mentioned first ion implanting and second ion implanting can be with identical or different.
Alternatively, above-mentioned first ion implanting and second ion implanting also include the activation annealing steps of ion.
Alternatively, the metal ohmic contact in above-mentioned steps four is Ni or Ti.
Alternatively, the passivation material in above-mentioned steps five is SiO2, and the passivation layer covers the field limiting ring area, or
The main knot groove surfaces of person's covering part.
Alternatively, it is additionally may included in the junction barrier groove before the Schottky contacts are made in above-mentioned steps five
The step of with the main side wall for tying groove and bottom grown thin oxide layer.
On the other hand, the present invention provides a kind of diode made according to the above method, including from the diode
Junction barrier area, main interface and field limiting ring area that the heart is sequentially distributed to periphery, wherein：
It is etched with below main knot groove, the main knot groove and is noted between main knot groove by ion in the main interface
Enter to form junction barrier, filling schottky metal in the main knot groove.
Trench junction barrier schottky diode provided in an embodiment of the present invention and preparation method thereof, by main interface scope
Interior some grooves of etching, then carry out ion implanting formation junction barrier between groove under groove, schottky metal, work are filled in groove
Skill complexity is suitable with prior art, and main knot electric field aggregation effect can be reduced while effectively shielding Schottky surface field
Should, main junction area is longitudinally increased, voltage endurance is lifted.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the SiC trench junction barrier schottky diodes of one embodiment of the invention；
Fig. 2A -2I are the making step structural representation of the SiC trench junction barrier schottky diodes of one embodiment of the invention
Figure；
Fig. 3 shows the preparation method flow chart of the trench junction barrier schottky diode of one embodiment of the invention.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only
Only it is a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In a first aspect, the present invention provides a kind of trench junction barrier schottky diode.In one embodiment of the invention,
A kind of carborundum (SiC) trench junction barrier schottky diode is provided.
Fig. 1 shows the cross-sectional view of the SiC trench junction barrier schottky diodes of one embodiment of the invention.Such as
Shown in figure, diode bottom is the N of heavy doping+- SiC substrate, in N+It is the N being lightly doped on-SiC substrate-- SiC epitaxial layer,
In N-- SiC epitaxial layer surface etch has a groove, and is adulterated the junction barrier to be formed by P+, has equally distributed three at main knot
There are the P+ injection regions that depth is suitable with groove between individual groove, groove, device periphery is then that P+ injects the field limiting ring structure to be formed
(FLR).Specifically, field limiting ring structure (FLR) is a kind of conventional terminal technology of power device, for reducing edge highfield collection
Middle effect, improves the actual breakdown electric field of device, is had a wide range of applications in carborundum electronic device structure.
Fig. 2A -2I show the making step structure of the SiC trench junction barrier schottky diodes of one embodiment of the invention
Schematic diagram.
There is provided substrate as shown in Figure 2 A, it is preferred that provides the N of heavy doping in one embodiment of the invention+- SiC is served as a contrast
Bottom.Particularly, heavy doping carries out N using V group elements such as phosphorus, arsenic+Doping.Doping process includes but is not limited to thermal diffusion, ion
The techniques such as injection.Particularly, N+The doping concentration of-SiC substrate can be 1018~1019cm-3。
As shown in Figure 2 B, in N+Growth N in front in-SiC substrate-- SiC epitaxial layer.Specifically, can use PVD, CVD,
Or the method such as ALD is in N+The N that-SiC substrate front extension is lightly doped-- SiC layer.Particularly, the N being lightly doped-The doping of-SiC layer
Level is 1 × 1016cm-3.Particularly, N-- SiC layer thickness is 11um.
As shown in Figure 2 C, in N-SiO is deposited in-SiC epitaxial layer2Layer.It is preferred that, PECVD can be used in N-- SiC extensions
SiO is deposited on layer2Layer.It is preferred that, SiO2Layer thickness beFurther, in SiO2Spin coating photoresist on layer, leads to
Cross photoetching and dry etching SiO2Layer, obtains diode field limiting ring terminal P+ injection windows.It is preferred that, in 500 DEG C of ring of temperature
In border, the Al ion implantings of different-energy and dosage combination are carried out, for being formed from N-- SiC epitaxial layer surface to inside be according to
The high dose Al ion implantings of secondary distribution.
As shown in Figure 2 D, inject, formd from N by the P+ of Al ions-- SiC epitaxial layer surface is in divide successively to inside
The high dose Al ion implantings of cloth.It is consequently formed field limiting ring P+ areas.Finally, N is removed-Barrier layer above-SiC epitaxial layer.It is excellent
Choosing, use SiO2Corrosive liquid corrosion barrier layer.
As shown in Figure 2 E, in N-SiO is deposited in-SiC epitaxial layer again2Layer.It is preferred that, using PECVD method to SiO2
Layer is deposited.It is preferred that, SiO2Layer thickness beThen, in SiO2Spin coating photoresist on layer, by photoetching and
Dry etching SiO2Technology, obtains the junction barrier etching groove window of trench junction barrier schottky diode.Further, etch
The junction barrier groove of trench junction barrier schottky diode, it is preferred that special by dry etching 4H-SiC formation junction barrier grooves
Other, the depth of junction barrier groove can be 0.5um.Further, it is remaining with previous step in temperature is 500 DEG C of environment
SiO2For implant blocking layer, the Al ion implantings of different-energy and dosage combination are carried out, are formed from N-- SiC epitaxial layer surface is in
Portion is in the high dose Al ion implanted regions being sequentially distributed.
As shown in Figure 2 F, in N-- SiC epitaxial layer surface forms high dose Al ions P+ injections to internal certain depth
Area.Then, N is removed-Implant blocking layer above-SiC epitaxial layer.It is preferred that, use SiO2Corrode the resistance of corrosion P+ ion implantings
Barrier.Finally, line activating annealing is entered to Al ions, for being formed from flute surfaces to N-It is sequentially distributed inside-SiC epitaxial layer
P+And P-- SiC areas.It is preferred that, enter line activating annealing to Al ions within the temperature range of 1500~1700 DEG C.It is preferred that, in argon
Al ions are carried out in compression ring border and enter line activating annealing.It is preferred that, the time that line activating annealing is entered to Al ions is 10-30min.By
This, formation is consequently formed trench junction barrier P+ areas.
As shown in Figure 2 G, in N+The back side of-SiC substrate makes Ohmic contact.Specifically, PVD, CVD, ALD can be passed through
Deng technology growth metal ohmic contact.It is preferred that, sputtering technology can be used in N+- surface on back side of SiC substrate growth Ohmic contact gold
Category.Particularly, metal ohmic contact can be Ni metals, and its thickness is Further, rapid thermal annealing shape is utilized
Into Ohmic contact, it is preferred that can be in rapid thermal annealing 5min in the nitrogen atmosphere at a temperature of 950 DEG C.Then, in device front
Make SiO2Passivation layer.Specifically, it is possible to use thermal oxidation technology grows thin SiO first2Layer.Particularly, thin SiO2The thickness of layer
Can beFurther, can using PECVD method, deposition thickness is again in device surfaceSiO2
Layer.
As illustrated in figure 2h, in the SiO2Spin coating photoresist on passivation layer, forms Schottky contacts pattern.Then, utilize
SiO2Corrode corrosion SiO2Passivation layer, forms schottky junctions contact hole.
As shown in figure 2i, further, Schottky contact metal is grown at the schottky junctions contact hole.Particularly, may be used
To grow Ti metals by electron beam evaporation, thickness isWith N-The region that-SiC epitaxial layer is directly contacted forms Xiao
Te Ji is contacted.Further, to growing Al electrode (not shown)s in device front, and thickening processing is carried out.Further,
Polyimides (PI) passivation is carried out in device front, the leakage current for reducing device improves the mechanical performance of device and resistance to
Chemical corrosion resistance.
On the other hand, the present invention provides a kind of preparation method of trench junction barrier schottky diode.Fig. 3 shows this hair
The preparation method flow chart of the trench junction barrier schottky diode of bright one embodiment.As illustrated, S31 represents to provide N+-
SiC substrate, and in N+- SiC substrate front growth N-- SiC epitaxial layer；S32 is represented in N-Field limiting ring is made in-SiC epitaxial layer
Area and the main interface of preparation, the main interface of preparation is used to provide the first p-type ion implanting；S33 is represented except the field limiting ring area
N in addition-Junction barrier groove is etched in-SiC epitaxial layer, wherein main knot groove is etched in the main interface of the preparation, and to described
Junction barrier groove carries out the second p-type ion implanting；S34 is represented in the N+- surface on back side of SiC substrate makes Ohmic contact；S35 is represented
Passivation layer and Schottky contacts are made in device front；S36 is represented to make metal electrode in device front and is passivated.
Trench junction barrier schottky diode provided in an embodiment of the present invention and preparation method thereof, by main interface scope
Interior some grooves of etching, then carry out ion implanting formation junction barrier between groove under groove, schottky metal are filled in groove, only
If need to make junction barrier area and during field limiting ring area more open dry etching or injection window, complex process degree and prior art phase
When reducing main knot electric field building-up effect while can effectively shielding Schottky surface field, increase main junction area, lifted pressure-resistant
Characteristic.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, the change or replacement that can be readily occurred in, all should
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (10)
1. a kind of preparation method of trench junction barrier schottky diode, it is characterised in that including：
Step 1: the substrate for making devices is provided, and in the substrate face grown epitaxial layer；
Step 2: fabricating yard limits ring region and the main interface of preparation on said epitaxial layer there, the main interface of preparation is used to provide first
Ion implanting；
Step 3: junction barrier groove is etched on the epitaxial layer in addition to the field limiting ring area, wherein main in the preparation
Interface etches main knot groove, and carries out the second ion implanting to the junction barrier groove and the main knot groove；
Step 4: making Ohmic contact in the substrate back；
Step 5: making passivation layer and Schottky contacts in device front；
Step 6: making metal electrode in device front and being passivated.
2. according to the method described in claim 1, it is characterised in that the substrate of the device is N+- SiC substrate, the epitaxial layer
For N-- SiC epitaxial layer.
3. according to the method described in claim 1, it is characterised in that the step 2 and the step 3 can be exchanged.
4. according to the method described in claim 1, it is characterised in that the first ion implanting and the step in the step 2
The second ion implanting in three is Al ion implantings.
5. method according to claim 4, it is characterised in that first ion implanting and second ion implanting
Energy and dosage can be with identical or different.
6. method according to claim 4, it is characterised in that first ion implanting and second ion implanting are also
Activation annealing steps including ion.
7. according to the method described in claim 1, it is characterised in that the metal ohmic contact in the step 4 is Ni or Ti.
8. according to the method described in claim 1, it is characterised in that the passivation material in the step 5 is SiO2, and it is described
Passivation layer covers the field limiting ring area, or the main surface for tying groove of covering part.
9. according to the method described in claim 1, it is characterised in that in the step 5 before the Schottky contacts are made
The step of being additionally may included in side wall and the bottom grown thin oxide layer of the junction barrier groove and main knot groove.
10. a kind of diode made according to the method described in claim 1, including from the center of the diode to periphery according to
Junction barrier area, main interface and the field limiting ring area of secondary distribution, it is characterised in that：
It is etched with the main interface below main knot groove, the main knot groove and passes through ion implanting shape between main knot groove
Into junction barrier, filling schottky metal in the main knot groove.
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| CN201710463915.XA CN107331616B (en) | 2017-06-19 | 2017-06-19 | Trench junction barrier Schottky diode and manufacturing method thereof |
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| CN201710463915.XA CN107331616B (en) | 2017-06-19 | 2017-06-19 | Trench junction barrier Schottky diode and manufacturing method thereof |
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| CN108346688A (en) * | 2018-01-25 | 2018-07-31 | 中国科学院微电子研究所 | SiC trench junction barrier schottky diodes with CSL transport layers and preparation method thereof |
| CN109087858A (en) * | 2018-10-29 | 2018-12-25 | 深圳基本半导体有限公司 | A kind of schottky junction gesture optimizing groove builds diode and preparation method thereof |
| CN109560142A (en) * | 2018-10-29 | 2019-04-02 | 厦门市三安集成电路有限公司 | Novel silicon carbide junction barrier schottky diode and preparation method thereof |
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| CN110571262A (en) * | 2019-09-09 | 2019-12-13 | 电子科技大学 | Silicon carbide junction barrier Schottky diode with groove structure |
| WO2020051806A1 (en) * | 2018-09-12 | 2020-03-19 | 中国科学院微电子研究所 | Semiconductor device and preparation method therefor |
| CN111192825A (en) * | 2018-12-12 | 2020-05-22 | 深圳方正微电子有限公司 | Silicon carbide schottky diode and method for manufacturing same |
| WO2020238587A1 (en) * | 2019-05-29 | 2020-12-03 | 西安电子科技大学 | Junction barrier schottky diode |
| CN112309840A (en) * | 2020-09-27 | 2021-02-02 | 东莞南方半导体科技有限公司 | Surface passivation method for terminal area of silicon carbide power device |
| CN113299631A (en) * | 2021-05-21 | 2021-08-24 | 深圳市联冀电子有限公司 | SBD diode with high ESD and preparation method thereof |
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| CN112309840A (en) * | 2020-09-27 | 2021-02-02 | 东莞南方半导体科技有限公司 | Surface passivation method for terminal area of silicon carbide power device |
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| CN114999913A (en) * | 2022-02-23 | 2022-09-02 | 瑶芯微电子科技(上海)有限公司 | SiC JBS device and preparation method thereof |
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