CN105448658A - Wafer cleaning method for preventing tungsten from corrosion - Google Patents
Wafer cleaning method for preventing tungsten from corrosion Download PDFInfo
- Publication number
- CN105448658A CN105448658A CN201410499268.4A CN201410499268A CN105448658A CN 105448658 A CN105448658 A CN 105448658A CN 201410499268 A CN201410499268 A CN 201410499268A CN 105448658 A CN105448658 A CN 105448658A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- wafer
- tungsten
- corroding
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a wafer cleaning method for preventing tungsten from corrosion. The wafer cleaning method for preventing tungsten from corrosion is used after the step that a metal conduction pattern connected with a tungsten plug is formed on the surface of the wafer through adoption of the dry etching technology and a photoresistance is peeled off. The wafer cleaning method at least comprises: performing passivation pretreatment of the wafer through adoption of passivation solution to allow the surface of the wafer not to be a passivation layer by the tungsten surface coated with the metal conduction pattern. As mentioned, the wafer cleaning method for preventing tungsten from corrosion is characterized in that: through the passivation pretreatment of the surface of a wafer, a passivation layer is formed on the surface of the tungsten so that the occurrence of an electrochemical reaction may be effectively avoided, the tungsten corrosion is prevented and the tungsten missing in a through hole is avoided, therefore the circuit malfunction is avoided and the yield and the reliability of the wafer are improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of method for cleaning wafer preventing tungsten from corroding.
Background technology
In common semiconductor fabrication process, need to make tungsten plug at crystal column surface.First at wafer 10 surface coverage dielectric layer 20, through hole (CTorVia) window 21 is carved in dielectric layer 20, then deposition tungsten 23 in the via aperture 21 being coated with barrier layer 22, dry etch process is finally adopted to etch away unnecessary tungsten cover layer, produce the through hole filling up tungsten, i.e. tungsten plug, as shown in Figure 1.
After tungsten plug completes, need to make metal conductive patterns at crystal column surface.First at tungsten covering metal layer (aluminum or aluminum alloy) beyond the Great Wall, then using photoresistance 40 as masking layer, dry etch process is adopted to etch away unnecessary metal level, form the metal conductive patterns 30 be connected with the tungsten plug of crystal column surface, as shown in Figure 2, now on metal conductive patterns 30 with a lot of positive charge; Finally peel off photoresistance 40, as shown in Figure 3, the part positive charge on metal conductive patterns can be taken away when photoresistance is stripped, but also remain a lot of positive charges.
Complete at metal conductive patterns, and after peeling off photoresistance, usually need to clean wafer, to remove the accessory substances such as the high molecular polymer (polymer) of dry etching generation.In current semiconductor fabrication process, usually with the high molecular polymer that EKC solution removal dry etching produces.The tungsten usually had in partial through holes due to crystal column surface exposes, and particularly at the boundary of the metal conductive patterns be connected with tungsten plug, metal conductive patterns fails to cover tungsten plug completely; And EKC solution has certain etching rate for tungsten, and when the positive charge on metal conductive patterns 30 runs up to certain, violent electrochemical reaction can be there is in EKC solution and tungsten, thus the tungsten 23 in corrosion through hole 21, as shown in Figure 4 and Figure 5, the tungsten in through hole lacks problem to cause crystal column surface to occur, causes circuit malfunction.CP (ChipProbing) test is carried out to the wafer with tungsten deficient phenomena, can find that yield declines serious, poor reliability.
Therefore, need now a kind of method for cleaning wafer badly, can effectively prevent tungsten from corroding, avoid the tungsten disappearance in through hole and electrochemical reaction, thus avoid circuit malfunction.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of method for cleaning wafer preventing tungsten from corroding, for solving the problem such as tungsten disappearance, electrochemical reaction that cleaning wafer in prior art causes.
For achieving the above object and other relevant objects, the invention provides a kind of method for cleaning wafer preventing tungsten from corroding, for forming in employing dry etch process the metal conductive patterns be connected with the tungsten plug of crystal column surface, and after peeling off the step of photoresistance, wherein, the described method for cleaning wafer preventing tungsten from corroding at least comprises: adopt passivating solution to carry out passivation preliminary treatment to described wafer, is not formed passivation layer by the tungsten surface that described metal conductive patterns covers to make described crystal column surface.
Preferably, described passivating solution is nmp solution.
Preferably, the pretreated concrete grammar of described passivation is: at the temperature of 22 DEG C ~ 24 DEG C, is inverted in described passivating solution by described wafer, and leaves standstill 5min ~ 15min.
Preferably, the described method for cleaning wafer preventing tungsten from corroding also comprises: adopt the cleaning fluid containing water-soluble metal corrosion inhibiter to carry out first time cleaning, tentatively to remove the high molecular polymer of post-etch residue at described crystal column surface to the pretreated wafer of passivation; Wherein, the concrete grammar of described first time cleaning is: at the temperature of 65 DEG C ~ 75 DEG C, clean containing in the cleaning fluid of water-soluble metal corrosion inhibiter described in being inverted in by pretreated for passivation wafer, scavenging period is 5min ~ 15min.
Preferably, the described method for cleaning wafer preventing tungsten from corroding also comprises: adopt the cleaning fluid containing water-soluble metal corrosion inhibiter to carry out second time cleaning, again to remove the high molecular polymer of post-etch residue at described crystal column surface to the wafer after first time cleaning; Wherein, the concrete grammar of described second time cleaning is: at the temperature of 65 DEG C ~ 75 DEG C, and clean containing in the cleaning fluid of water-soluble metal corrosion inhibiter described in being inverted in by the wafer after first time cleaning, scavenging period is 5min ~ 15min.
Preferably, the described method for cleaning wafer preventing tungsten from corroding also comprises: adopt the cleaning fluid containing efficient selective solvent to carry out third time cleaning to the wafer after second time cleaning, to remain in the cleaning fluid containing water-soluble metal corrosion inhibiter of described crystal column surface after removing twice cleaning; Wherein, the concrete grammar of described third time cleaning is: at the temperature of 22 DEG C ~ 24 DEG C, and clean containing in the cleaning fluid of efficient selective solvent described in being inverted in by the wafer after second time cleaning, scavenging period is 5min ~ 15min.
Preferably, the method for cleaning wafer preventing tungsten from corroding described in also comprises: adopt deionized water to carry out the 4th cleaning to the wafer after third time cleaning, after removing three cleanings, remain in the cleaning fluid of described crystal column surface; Wherein, the concrete grammar of described 4th cleaning is: at the temperature of 22 DEG C ~ 24 DEG C, and be inverted in described deionized water by the wafer after third time cleaning and clean, scavenging period is 3min ~ 8min.
Preferably, the method for cleaning wafer preventing tungsten from corroding described in also comprises: the wafer after cleaning the 4th time is dried, after removing residual 4th cleaning, stay the deionized water of described crystal column surface; Wherein, the concrete grammar of described oven dry is: at the temperature of 140 DEG C ~ 160 DEG C, and dry the wafer after the 4th cleaning, drying time is 7min ~ 8min.
Preferably, the described cleaning fluid containing water-soluble metal corrosion inhibiter is EKC solution.
Preferably, the described cleaning fluid containing efficient selective solvent is nmp solution.
As mentioned above, the method for cleaning wafer preventing tungsten from corroding of the present invention, there is following beneficial effect: by carrying out passivation preliminary treatment to crystal column surface, thus form one deck passivation layer on the surface of tungsten, can effectively prevent electrochemical reaction from occurring, prevent tungsten from corroding, avoid the tungsten in through hole to lack, thus avoid circuit malfunction, improve yield and the reliability of wafer.
Accompanying drawing explanation
Fig. 1 is shown as the schematic diagram at the tungsten plug of crystal column surface making in prior art of the present invention.
Fig. 2 is shown as the schematic diagram at the metal conductive patterns of crystal column surface making in prior art of the present invention.
Fig. 3 is shown as in Fig. 2 the schematic diagram after peeling off photoresistance.
Schematic diagram when Fig. 4 tungsten be shown as in prior art of the present invention in through hole is corroded.
Schematic diagram after Fig. 5 tungsten be shown as in prior art of the present invention in through hole is corroded.
Fig. 6 is shown as in the embodiment of the present invention and carries out the pretreated schematic diagram of passivation to wafer.
Fig. 7 is shown as the schematic flow sheet of the method for cleaning wafer preventing tungsten from corroding of the embodiment of the present invention.
Element numbers explanation
10 wafers
20 dielectric layers
21 via aperture
22 barrier layers
23 tungsten
24 passivation layers
30 metal conductive patterns
40 photoresistances
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 6 ~ Fig. 7, the present invention relates to a kind of method for cleaning wafer preventing tungsten from corroding, for forming in employing dry etch process the metal conductive patterns be connected with the tungsten plug of crystal column surface, and after peeling off the step of photoresistance.
The method for cleaning wafer preventing tungsten from corroding of the present invention at least comprises: adopt passivating solution to carry out passivation preliminary treatment to wafer, to make wafer 10 surface do not formed passivation layer 24 by tungsten 23 surface that metal conductive patterns covers 30, as shown in Figure 6.This passivation layer can closely cover tungsten surface, and farthest protection is exposed to the tungsten material of crystal column surface.
Wherein, passivating solution is can react with tungsten to form passivation layer and the solution do not reacted with metal conductive patterns (material is aluminium or aluminium alloy).
In addition, the pretreated concrete grammar of passivation is: at the temperature of 22 DEG C ~ 24 DEG C, is inverted in passivating solution by wafer, and leaves standstill 5min ~ 15min.
In addition, the method for cleaning wafer preventing tungsten from corroding of the present invention also comprises: adopt the cleaning fluid containing water-soluble metal corrosion inhibiter to carry out first time cleaning, tentatively to remove the high molecular polymer of post-etch residue at crystal column surface to the pretreated wafer of passivation; Wherein, the concrete grammar of first time cleaning is: at the temperature of 65 DEG C ~ 75 DEG C, be inverted in by pretreated for passivation wafer in the cleaning fluid containing water-soluble metal corrosion inhibiter and clean, scavenging period is 5min ~ 15min.
In addition, the method for cleaning wafer preventing tungsten from corroding of the present invention also comprises: adopt the cleaning fluid containing water-soluble metal corrosion inhibiter to carry out second time cleaning, again to remove the high molecular polymer of post-etch residue at crystal column surface to the wafer after first time cleaning; Wherein, the concrete grammar of second time cleaning is: at the temperature of 65 DEG C ~ 75 DEG C, and be inverted in by the wafer after first time cleaning in the cleaning fluid containing water-soluble metal corrosion inhibiter and clean, scavenging period is 5min ~ 15min.
In addition, the method for cleaning wafer preventing tungsten from corroding of the present invention also comprises: adopt the cleaning fluid containing efficient selective solvent to carry out third time cleaning to the wafer after second time cleaning, to remain in the cleaning fluid containing water-soluble metal corrosion inhibiter of crystal column surface after removing twice cleaning; Wherein, the concrete grammar that third time cleans is: at the temperature of 22 DEG C ~ 24 DEG C, and be inverted in by the wafer after second time cleaning in the cleaning fluid containing efficient selective solvent and clean, scavenging period is 5min ~ 15min.
In addition, the method for cleaning wafer preventing tungsten from corroding of the present invention also comprises: adopt deionized water to carry out the 4th cleaning to the wafer after third time cleaning, after removing three cleanings, remain in the cleaning fluid of crystal column surface; Wherein, the concrete grammar of the 4th cleaning is: at the temperature of 22 DEG C ~ 24 DEG C, and be inverted in deionized water by the wafer after third time cleaning and clean, scavenging period is 3min ~ 8min.
In addition, the method for cleaning wafer preventing tungsten from corroding of the present invention also comprises: the wafer after cleaning the 4th time is dried, after removing residual 4th cleaning, stay the deionized water of crystal column surface; Wherein, the concrete grammar of oven dry is: at the temperature of 140 DEG C ~ 160 DEG C, and dry the wafer after the 4th cleaning, drying time is 7min ~ 8min.
Wherein, the cleaning fluid containing water-soluble metal corrosion inhibiter is can prevent metal conductive patterns (material is aluminium or aluminium alloy) from burn into occurring and can remove the solution that etching produces high molecular polymer.And the cleaning fluid containing efficient selective solvent is to prevent metal conductive patterns (material is aluminium or aluminium alloy) from burn into occurring and can remove the solution of the cleaning fluid containing water-soluble metal corrosion inhibiter.
The step of various method divides above, just in order to be described clearly, can merge into a step or splitting some step, being decomposed into multiple step, when realizing as long as comprise identical logical relation, all in the protection range of this patent; To adding inessential amendment in algorithm or in flow process or introducing inessential design, but the core design not changing its algorithm and flow process is all in the protection range of this patent.
Embodiment:
Idiographic flow refers to Fig. 7, and the method for cleaning wafer preventing tungsten from corroding of the present embodiment is as follows:
Adopt passivating solution to carry out passivation preliminary treatment to wafer, do not formed passivation layer by the tungsten surface that metal conductive patterns covers to make crystal column surface.In the present embodiment, preferably, passivating solution is nmp solution, and NMP is also 1-METHYLPYRROLIDONE, its ph value 7 ~ 9.The pretreated concrete grammar of passivation is: at the temperature of 23 DEG C, is inverted in passivating solution by wafer, and leaves standstill 10min, can ensure that the surface of the tungsten do not covered by metal conductive patterns can form fine and close passivation layer, refer to the passivation layer 24 shown in Fig. 6.
The cleaning fluid containing water-soluble metal corrosion inhibiter is adopted to carry out first time cleaning, tentatively to remove the high molecular polymer of post-etch residue at crystal column surface to the pretreated wafer of passivation.In the present embodiment, preferably, cleaning fluid containing water-soluble metal corrosion inhibiter is EKC solution, and EKC solution is primarily of compositions such as water, amine, HAD (for removing high molecular polymer), metal inhibitor-hydroquinones (corroding for preventing metal conductive patterns).The concrete grammar that first time cleans is: at the temperature of 70 DEG C, be inverted in by pretreated for passivation wafer in the cleaning fluid containing water-soluble metal corrosion inhibiter and clean, scavenging period is 10min, ensures that wafer can fully be cleaned.Preliminary passivation is carried out by wafer is introduced into NMP liquid before entering into EKC solution; tungsten material surface after transpassivation reduces the rate of etch in EKC solution; also tungsten can be avoided directly to contact generation electrochemical reaction with EKC solution, thus can be good at the tungsten material protected below.
The cleaning fluid containing water-soluble metal corrosion inhibiter is adopted to carry out second time cleaning, again to remove the high molecular polymer of post-etch residue at crystal column surface to the wafer after first time cleaning.In the present embodiment, preferably, cleaning fluid containing water-soluble metal corrosion inhibiter is EKC solution, and EKC solution is primarily of compositions such as water, amine, HAD (for removing high molecular polymer), metal inhibitor-hydroquinones (corroding for preventing metal conductive patterns).The concrete grammar of second time cleaning is: at the temperature of 70 DEG C, and be inverted in by the wafer after first time cleaning in the cleaning fluid containing water-soluble metal corrosion inhibiter and clean, scavenging period is 10min.Adopt EKC solution to clean by twice, ensure that post-etch residue can be completely removed at the high molecular polymer of crystal column surface.
The cleaning fluid containing efficient selective solvent is adopted to carry out third time cleaning to the wafer after second time cleaning, to remain in the cleaning fluid containing water-soluble metal corrosion inhibiter of crystal column surface after removing twice cleaning.In the present embodiment, preferably, the cleaning fluid containing efficient selective solvent is nmp solution, its can with EKC solution generation chemical reaction, thus remove residual EKC solution.The concrete grammar that third time cleans is: at the temperature of 223 DEG C, and be inverted in by the wafer after second time cleaning in the cleaning fluid containing efficient selective solvent and clean, scavenging period is 10min.
Adopt deionized water to carry out the 4th cleaning to the wafer after third time cleaning, after removing three cleanings, remain in the cleaning fluid of crystal column surface.In the present embodiment, preferably, the concrete grammar of the 4th cleaning is: at the temperature of 23 DEG C, and be inverted in deionized water by the wafer after third time cleaning and clean, scavenging period is 5min.
Wafer after cleaning the 4th time is dried, after removing residual 4th cleaning, stay the deionized water of crystal column surface.In the present embodiment, preferably, the concrete grammar of oven dry is: at the temperature of 150 DEG C, to the 4th time cleaning after wafer dry, drying time be 7 points 10 seconds.
CP test is carried out to the wafer after cleaning, can see: before the cleaning of employing EKC solution, increase nmp solution passivation, almost there is not the disappearance of tungsten, yield is high, therefore the problem of chip electrochemical reaction can effectively be solved, compared to prior art, substantially increase yield and the reliability of wafer.
It is worth mentioning that, the method for cleaning wafer preventing tungsten from corroding of the present embodiment, passivation preliminary treatment can be carried out by existing wet-cleaned board to wafer, do not need to increase extra production equipment.Have several reative cells in existing wet-cleaned board, each step is all carried out in different reative cells.Each solution puts into each reative cell, and be inverted in the solution of each reative cell by mechanical arm successively by wafer, can complete the cleaning method of the present embodiment, simple and convenient, cost is low.
It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
In sum, the method for cleaning wafer that the present invention prevents tungsten from corroding, there is following beneficial effect: by carrying out passivation preliminary treatment to crystal column surface, thus form one deck passivation layer on the surface of tungsten, can effectively prevent electrochemical reaction from occurring, prevent tungsten from corroding, avoid the tungsten in through hole to lack, thus avoid circuit malfunction, improve yield and the reliability of wafer.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. the method for cleaning wafer preventing tungsten from corroding, for forming in employing dry etch process the metal conductive patterns be connected with the tungsten plug of crystal column surface, and after peeling off the step of photoresistance, it is characterized in that, the described method for cleaning wafer preventing tungsten from corroding at least comprises: adopt passivating solution to carry out passivation preliminary treatment to described wafer, is not formed passivation layer by the tungsten surface that described metal conductive patterns covers to make described crystal column surface.
2. the method for cleaning wafer preventing tungsten from corroding according to claim 1, is characterized in that, described passivating solution is nmp solution.
3. the method for cleaning wafer preventing tungsten from corroding according to claim 1, is characterized in that, the pretreated concrete grammar of described passivation is: at the temperature of 22 DEG C ~ 24 DEG C, is inverted in described passivating solution by described wafer, and leaves standstill 5min ~ 15min.
4. the method for cleaning wafer preventing tungsten from corroding according to claim 1, it is characterized in that, the described method for cleaning wafer preventing tungsten from corroding also comprises: adopt the cleaning fluid containing water-soluble metal corrosion inhibiter to carry out first time cleaning, tentatively to remove the high molecular polymer of post-etch residue at described crystal column surface to the pretreated wafer of passivation; Wherein, the concrete grammar of described first time cleaning is: at the temperature of 65 DEG C ~ 75 DEG C, clean containing in the cleaning fluid of water-soluble metal corrosion inhibiter described in being inverted in by pretreated for passivation wafer, scavenging period is 5min ~ 15min.
5. the method for cleaning wafer preventing tungsten from corroding according to claim 4, it is characterized in that, the described method for cleaning wafer preventing tungsten from corroding also comprises: adopt the cleaning fluid containing water-soluble metal corrosion inhibiter to carry out second time cleaning, again to remove the high molecular polymer of post-etch residue at described crystal column surface to the wafer after first time cleaning; Wherein, the concrete grammar of described second time cleaning is: at the temperature of 65 DEG C ~ 75 DEG C, and clean containing in the cleaning fluid of water-soluble metal corrosion inhibiter described in being inverted in by the wafer after first time cleaning, scavenging period is 5min ~ 15min.
6. the method for cleaning wafer preventing tungsten from corroding according to claim 5, it is characterized in that, the described method for cleaning wafer preventing tungsten from corroding also comprises: adopt the cleaning fluid containing efficient selective solvent to carry out third time cleaning to the wafer after second time cleaning, to remain in the cleaning fluid containing water-soluble metal corrosion inhibiter of described crystal column surface after removing twice cleaning; Wherein, the concrete grammar of described third time cleaning is: at the temperature of 22 DEG C ~ 24 DEG C, and clean containing in the cleaning fluid of efficient selective solvent described in being inverted in by the wafer after second time cleaning, scavenging period is 5min ~ 15min.
7. the method for cleaning wafer preventing tungsten from corroding according to claim 6, it is characterized in that, the described method for cleaning wafer preventing tungsten from corroding also comprises: adopt deionized water to carry out the 4th cleaning to the wafer after third time cleaning, after removing three cleanings, remain in the cleaning fluid of described crystal column surface; Wherein, the concrete grammar of described 4th cleaning is: at the temperature of 22 DEG C ~ 24 DEG C, and be inverted in described deionized water by the wafer after third time cleaning and clean, scavenging period is 3min ~ 8min.
8. the method for cleaning wafer preventing tungsten from corroding according to claim 7, it is characterized in that, the described method for cleaning wafer preventing tungsten from corroding also comprises: the wafer after cleaning the 4th time is dried, after removing residual 4th cleaning, stay the deionized water of described crystal column surface; Wherein, the concrete grammar of described oven dry is: at the temperature of 140 DEG C ~ 160 DEG C, and dry the wafer after the 4th cleaning, drying time is 7min ~ 8min.
9. the method for cleaning wafer preventing tungsten from corroding according to any one of claim 4-7, is characterized in that, the described cleaning fluid containing water-soluble metal corrosion inhibiter is EKC solution.
10. the method for cleaning wafer preventing tungsten from corroding according to any one of claim 4-7, is characterized in that, the described cleaning fluid containing efficient selective solvent is nmp solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410499268.4A CN105448658B (en) | 2014-09-25 | 2014-09-25 | The method for cleaning wafer for preventing tungsten from corroding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410499268.4A CN105448658B (en) | 2014-09-25 | 2014-09-25 | The method for cleaning wafer for preventing tungsten from corroding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105448658A true CN105448658A (en) | 2016-03-30 |
| CN105448658B CN105448658B (en) | 2018-07-06 |
Family
ID=55558729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410499268.4A Active CN105448658B (en) | 2014-09-25 | 2014-09-25 | The method for cleaning wafer for preventing tungsten from corroding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105448658B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359108A (en) * | 2017-07-27 | 2017-11-17 | 成都海威华芯科技有限公司 | A kind of semiconductor crystal wafer cleaning method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6077762A (en) * | 1997-12-22 | 2000-06-20 | Vlsi Technology, Inc. | Method and apparatus for rapidly discharging plasma etched interconnect structures |
| CN1453835A (en) * | 2002-04-26 | 2003-11-05 | 旺宏电子股份有限公司 | Method of preventing tungsten plug from corrosion |
| CN102569022A (en) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning method after tungsten chemical-mechanical polishing |
-
2014
- 2014-09-25 CN CN201410499268.4A patent/CN105448658B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6077762A (en) * | 1997-12-22 | 2000-06-20 | Vlsi Technology, Inc. | Method and apparatus for rapidly discharging plasma etched interconnect structures |
| CN1453835A (en) * | 2002-04-26 | 2003-11-05 | 旺宏电子股份有限公司 | Method of preventing tungsten plug from corrosion |
| CN102569022A (en) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning method after tungsten chemical-mechanical polishing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359108A (en) * | 2017-07-27 | 2017-11-17 | 成都海威华芯科技有限公司 | A kind of semiconductor crystal wafer cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105448658B (en) | 2018-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104047008A (en) | Copper cleaning process | |
| CN104425210B (en) | The forming method of semiconductor structure | |
| CN101075552A (en) | Method of removing ion implanted photoresist | |
| CN105609408A (en) | Forming method of semiconductor device | |
| CN105870050A (en) | Forming method of semiconductor device | |
| US20070207609A1 (en) | Tungsten Plug Corrosion Prevention Method Using Water | |
| CN105448658A (en) | Wafer cleaning method for preventing tungsten from corrosion | |
| US20060048801A1 (en) | Tungsten plug corrosion prevention method using gas sparged water | |
| CN108511316A (en) | The cleaning method of semiconductor wafer | |
| JP2010087326A (en) | Method for manufacturing semiconductor device | |
| CN103346102B (en) | Detect the method for pretreatment potentiality | |
| CN101727025A (en) | Method for removing photoresist residues and etching reactant granules | |
| TW561538B (en) | Method of preventing tungsten plugs from corrosion | |
| CN104752233A (en) | Welding pad manufacturing method | |
| TWI479549B (en) | Method of removing post-etch residues | |
| CN100367450C (en) | Method for producing blocking-layer | |
| CN100444350C (en) | Method for preventing tungsten plug corrosion | |
| CN102569023B (en) | A kind of cleaning method reducing metal erosion | |
| US7879533B2 (en) | Etching residue removal method and semiconductor device fabrication method using this method | |
| CN104952721A (en) | Post-processing method for removing photoresist and manufacture method of interconnection layer structure | |
| CN1139978C (en) | Method of manufacturing semiconductor device | |
| US6495472B2 (en) | Method for avoiding erosion of conductor structure during removing etching residues | |
| CN116344683B (en) | Solar cell and preparation method thereof | |
| US20050112903A1 (en) | Process for removing tungsten particles after tungsten etch-back | |
| KR0171735B1 (en) | Method of preventing metal wire of semiconductor device from etching |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |