CN105448658B - The method for cleaning wafer for preventing tungsten from corroding - Google Patents
The method for cleaning wafer for preventing tungsten from corroding Download PDFInfo
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- CN105448658B CN105448658B CN201410499268.4A CN201410499268A CN105448658B CN 105448658 B CN105448658 B CN 105448658B CN 201410499268 A CN201410499268 A CN 201410499268A CN 105448658 B CN105448658 B CN 105448658B
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Abstract
The present invention provides a kind of method for cleaning wafer for preventing tungsten from corroding, for in the metal conductive patterns being connected using dry etch process formation with the tungsten plug of crystal column surface, and after the step of removing photoresist, wherein, the method for cleaning wafer for preventing tungsten from corroding includes at least：Pretreatment is passivated to the wafer using passivating solution, so that the tungsten surface that the crystal column surface is not covered by the metal conductive patterns forms passivation layer.As described above, the present invention's prevents the method for cleaning wafer that tungsten corrodes, have the advantages that：By being passivated pretreatment to crystal column surface, so as to form one layer of passivation layer on the surface of tungsten, electrochemical reaction is can effectively prevent, prevents tungsten from corroding, the tungsten in through-hole is avoided to lack, so as to avoid circuit malfunction, improves the yield and reliability of wafer.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of method for cleaning wafer for preventing tungsten from corroding.
Background technology
In common semiconductor fabrication process, need to make tungsten plug in crystal column surface.It is covered first on 10 surface of wafer
Dielectric layer 20 carves through-hole (CT or Via) window 21, then in the via aperture covered with barrier layer 22 in dielectric layer 20
Deposition tungsten 23 in 21 are finally etched away extra tungsten coating using dry etch process, produce the through-hole for filling up tungsten, i.e. tungsten
Plug, as shown in Figure 1.
After tungsten plug completes, need to make metal conductive patterns in crystal column surface.Gold is covered first in tungsten plug
Belong to layer (aluminum or aluminum alloy), then using photoresist 40 as masking layer, extra metal layer, shape are etched away using dry etch process
The metal conductive patterns 30 being connected into the tungsten plug with crystal column surface, as shown in Fig. 2, at this time with many on metal conductive patterns 30
Positive charge；Photoresist 40 is finally peeled away, as shown in figure 3, photoresist can take away the part positive charge on metal conductive patterns when being stripped,
But it there remains many positive charges.
It completes in metal conductive patterns, and after removing photoresist, it usually needs wafer is cleaned, it is dry to remove
The by-products such as the high molecular polymer (polymer) that method etching generates.In current semiconductor fabrication process, EKC is usually used
The high molecular polymer that solution removal dry etching generates.The tungsten exposure in partial through holes is usually had due to crystal column surface, it is special
It is not the boundary in the metal conductive patterns being connected with tungsten plug, metal conductive patterns fail that tungsten plug is completely covered；And EKC solution
There is certain etching rate for tungsten, and in the case that the positive charge on metal conductive patterns 30 is run up to centainly, EKC solution
Violent electrochemical reaction can occur with tungsten, so as to corrode the tungsten 23 in through-hole 21, as shown in Figure 4 and Figure 5, cause crystal column surface
There is the tungsten missing problem in through-hole, lead to circuit malfunction.CP (Chip are carried out to the wafer with tungsten deficient phenomena
Probing it) tests, it is found that yield declines serious, poor reliability.
Therefore, there is an urgent need for a kind of method for cleaning wafer now, tungsten can be effectively prevent to corrode, avoid tungsten in through-hole lack and
Electrochemical reaction, so as to avoid circuit malfunction.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of wafer for preventing tungsten from corroding is clear
Washing method, for solving in the prior art caused by cleaning wafer the problems such as tungsten missing, electrochemical reaction.
In order to achieve the above objects and other related objects, the present invention provides a kind of method for cleaning wafer for preventing tungsten from corroding,
For using the metal conductive patterns that are connected with the tungsten plug of crystal column surface of dry etch process formation, and the step of remove photoresist
Later, wherein, the method for cleaning wafer for preventing tungsten from corroding includes at least：The wafer is passivated using passivating solution pre-
Processing, so that the tungsten surface that the crystal column surface is not covered by the metal conductive patterns forms passivation layer.
Preferably, the passivating solution is nmp solution.
Preferably, the specific method of the passivation pretreatment is：At a temperature of 22 DEG C~24 DEG C, the wafer is inverted
In the passivating solution, and stand 5min~15min.
Preferably, the method for cleaning wafer for preventing tungsten from corroding further includes：Using containing water-soluble metal corrosion inhibiter
Cleaning solution carries out first time cleaning to being passivated pretreated wafer, tentatively to remove post-etch residue in the crystal column surface
High molecular polymer；Wherein, the specific method of the first time cleaning is：At a temperature of 65 DEG C~75 DEG C, by the pre- place of passivation
Wafer after reason is inverted in the cleaning solution containing water-soluble metal corrosion inhibiter and is cleaned, scavenging period for 5min~
15min。
Preferably, the method for cleaning wafer for preventing tungsten from corroding further includes：Using containing water-soluble metal corrosion inhibiter
Wafer after cleaning solution cleans first time carries out second of cleaning, to remove post-etch residue again in the crystal column surface
High molecular polymer；Wherein, the specific method of second of cleaning is：It, will be clear for the first time at a temperature of 65 DEG C~75 DEG C
Wafer after washing is inverted in the cleaning solution containing water-soluble metal corrosion inhibiter and is cleaned, scavenging period for 5min~
15min。
Preferably, the method for cleaning wafer for preventing tungsten from corroding further includes：Using containing the clear of efficient selective solvent
Wafer after washing lotion cleans second carries out third time cleaning, and containing for the crystal column surface is remained in after being cleaned twice with removal
There is the cleaning solution of water-soluble metal corrosion inhibiter；Wherein, the specific method of the third time cleaning is：In 22 DEG C~24 DEG C of temperature
Under, the wafer after second is cleaned is inverted in the cleaning solution containing efficient selective solvent and cleans, during cleaning
Between be 5min~15min.
Preferably, the method for cleaning wafer for preventing tungsten from corroding further includes：After being cleaned using deionized water to third time
Wafer carry out the 4th cleaning, with remove clean three times after remain in the cleaning solution of the crystal column surface；Wherein, the described 4th
The specific method of secondary cleaning is：At a temperature of 22 DEG C~24 DEG C, the wafer after third time is cleaned is inverted in the deionization
It is cleaned in water, scavenging period is 3min~8min.
Preferably, the method for cleaning wafer for preventing tungsten from corroding further includes：Wafer after 4th cleaning is dried, with
Remove the deionized water that the crystal column surface is stayed in after cleaning residual 4th time；Wherein, the specific method of the drying is：140
DEG C~160 DEG C at a temperature of, to the 4th time cleaning after wafer dry, drying time be 7min~8min.
Preferably, the cleaning solution containing water-soluble metal corrosion inhibiter is EKC solution.
Preferably, the cleaning solution containing efficient selective solvent is nmp solution.
As described above, the present invention's prevents the method for cleaning wafer that tungsten corrodes, have the advantages that：By to wafer
Surface is passivated pretreatment, so as to form one layer of passivation layer on the surface of tungsten, can effectively prevent electrochemical reaction,
It prevents tungsten from corroding, the tungsten in through-hole is avoided to lack, so as to avoid circuit malfunction, improve the yield and reliability of wafer.
Description of the drawings
Fig. 1 is shown as the schematic diagram of tungsten plug that the present invention makes in the prior art in crystal column surface.
Fig. 2 is shown as the schematic diagram of metal conductive patterns that the present invention makes in the prior art in crystal column surface.
Fig. 3 is shown as removing the schematic diagram after photoresist in Fig. 2.
The schematic diagram when tungsten that Fig. 4 is shown as in through-hole in the prior art of the invention is corroded.
Fig. 5 is shown as the schematic diagram after tungsten of the present invention in the prior art in through-hole is corroded.
Fig. 6 is shown as in the embodiment of the present invention being passivated wafer in pretreated schematic diagram.
Fig. 7 is shown as the flow diagram of method for cleaning wafer for preventing tungsten from corroding of the embodiment of the present invention.
Component label instructions
10 wafers
20 dielectric layers
21 via apertures
22 barrier layers
23 tungsten
24 passivation layers
30 metal conductive patterns
40 photoresists
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 6~Fig. 7 is please referred to, the present invention relates to a kind of method for cleaning wafer for preventing tungsten from corroding, for using dry method
The metal conductive patterns that are connected with the tungsten plug of crystal column surface of etching technics formation, and the step of remove photoresist after.
The method for cleaning wafer for preventing tungsten from corroding of the present invention includes at least：Pre- place is passivated wafer using passivating solution
Reason, so that tungsten 23 surface of 10 surface of wafer not by metal conductive patterns covering 30 forms passivation layer 24, as shown in Figure 6.This is blunt
Tungsten surface can be closely covered in by changing layer, and farthest protection is exposed to the tungsten material of crystal column surface.
Wherein, passivating solution for can react with tungsten to be formed passivation layer and not with metal conductive patterns (material be aluminium or
Person's aluminium alloy) solution that reacts.
In addition, the specific method of passivation pretreatment is：At a temperature of 22 DEG C~24 DEG C, wafer is inverted in passivating solution
In, and stand 5min~15min.
In addition, the method for cleaning wafer for preventing tungsten from corroding of the present invention further includes：Using containing water-soluble metal corrosion inhibiter
Cleaning solution carry out first time cleaning to being passivated pretreated wafer, tentatively to remove height of the post-etch residue in crystal column surface
Molecularly Imprinted Polymer；Wherein, the specific method of cleaning is for the first time：At a temperature of 65 DEG C~75 DEG C, it will be passivated pretreated
Wafer is inverted in the cleaning solution containing water-soluble metal corrosion inhibiter and is cleaned, and scavenging period is 5min~15min.
In addition, the method for cleaning wafer for preventing tungsten from corroding of the present invention further includes：Using containing water-soluble metal corrosion inhibiter
Cleaning solution first time is cleaned after wafer carry out second and clean, to remove height of the post-etch residue in crystal column surface again
Molecularly Imprinted Polymer；Wherein, the specific method of second of cleaning is：At a temperature of 65 DEG C~75 DEG C, after first time is cleaned
Wafer is inverted in the cleaning solution containing water-soluble metal corrosion inhibiter and is cleaned, and scavenging period is 5min~15min.
In addition, the method for cleaning wafer for preventing tungsten from corroding of the present invention further includes：Using containing efficient selective solvent
Wafer after cleaning solution cleans second carries out third time cleaning, and containing for crystal column surface is remained in after being cleaned twice with removal
The cleaning solution of water-soluble metal corrosion inhibiter；Wherein, the specific method of third time cleaning is：It, will at a temperature of 22 DEG C~24 DEG C
Second clean after wafer be inverted in the cleaning solution containing efficient selective solvent and cleaned, scavenging period for 5min~
15min。
In addition, the method for cleaning wafer for preventing tungsten from corroding of the present invention further includes：Third time is cleaned using deionized water
Wafer afterwards carries out the 4th cleaning, and the cleaning solution of crystal column surface is remained in after being cleaned three times with removal；Wherein, the 4th cleaning
Specific method be：At a temperature of 22 DEG C~24 DEG C, the wafer after third time is cleaned is inverted in deionized water and carries out clearly
It washes, scavenging period is 3min~8min.
In addition, the method for cleaning wafer for preventing tungsten from corroding of the present invention further includes：Wafer after 4th cleaning is dried,
To stay in the deionized water of crystal column surface after removing residual 4th cleaning；Wherein, the specific method of drying is：140 DEG C~160
At a temperature of DEG C, the wafer after the 4th cleaning is dried, drying time is 7min~8min.
Wherein, cleaning solution containing water-soluble metal corrosion inhibiter for can prevent metal conductive patterns (material be aluminium or
Aluminium alloy) burn into occurs and the solution that etching generates high molecular polymer can be removed.And contain the clear of efficient selective solvent
Washing lotion is can prevent metal conductive patterns (material is aluminium or aluminium alloy) from burn into occurs and can remove containing water-soluble gold
Belong to the solution of the cleaning solution of corrosion inhibiter.
The step of various methods divide above, be intended merely to describe it is clear, when realization can be merged into a step or
Certain steps are split, are decomposed into multiple steps, as long as comprising identical logical relation, all in the protection domain of this patent
It is interior；To inessential modification is either added in algorithm in flow or introduces inessential design, but do not change its algorithm
Core design with flow is all in the protection domain of the patent.
Embodiment：
Idiographic flow is referring to Fig. 7, the method for cleaning wafer for preventing tungsten from corroding of the present embodiment is as follows：
Pretreatment is passivated wafer using passivating solution, so that the tungsten table that crystal column surface is not covered by metal conductive patterns
Face forms passivation layer.In this embodiment, it is preferred that passivating solution is nmp solution, NMP is also N-Methyl pyrrolidone, ph values
7~9.Being passivated the specific method pre-processed is：At a temperature of 23 DEG C, wafer is inverted in passivating solution, and stands 10min,
Can ensure the surface for the tungsten not covered by metal conductive patterns can form fine and close passivation layer, please refer to shown in fig. 6 blunt
Change layer 24.
First time cleaning is carried out to being passivated pretreated wafer using the cleaning solution containing water-soluble metal corrosion inhibiter, with
Preliminary removal post-etch residue is in the high molecular polymer of crystal column surface.In this embodiment, it is preferred that contain water-soluble metal
The cleaning solution of corrosion inhibiter is EKC solution, and EKC solution is mainly by water, amine, HAD (for removing high molecular polymer), corrosion inhibition for metal
The compositions such as agent-hydroquinone (for preventing metal conductive patterns from corroding).The specific method of cleaning is for the first time：In 70 DEG C of temperature
It under degree, pretreated wafer will be passivated is inverted in the cleaning solution containing water-soluble metal corrosion inhibiter and clean, during cleaning
Between for 10min, ensure that wafer can be cleaned fully.By wafer is introduced into before EKC solution is entered NMP liquids into
The preliminary passivation of row, the tungsten material surface after transpassivation reduce the rate of etch in EKC solution, can also avoid tungsten and EKC
Solution is in direct contact generation electrochemical reaction, so as to protect following tungsten material well.
Wafer after being cleaned using the cleaning solution containing water-soluble metal corrosion inhibiter to first time is carried out second and cleaned, with
Removal post-etch residue is in the high molecular polymer of crystal column surface again.In this embodiment, it is preferred that contain water-soluble metal
The cleaning solution of corrosion inhibiter is EKC solution, and EKC solution is mainly by water, amine, HAD (for removing high molecular polymer), corrosion inhibition for metal
The compositions such as agent-hydroquinone (for preventing metal conductive patterns from corroding).The specific method of cleaning is for the second time：In 70 DEG C of temperature
Under degree, the wafer after first time is cleaned is inverted in the cleaning solution containing water-soluble metal corrosion inhibiter and cleans, during cleaning
Between be 10min.By being cleaned twice using EKC solution, ensure high molecular polymer of the post-etch residue in crystal column surface
It can be completely removed.
Wafer after being cleaned using the cleaning solution containing efficient selective solvent to second carries out third time cleaning, to go
Except the cleaning solution containing water-soluble metal corrosion inhibiter that crystal column surface is remained in after cleaning twice.In this embodiment, it is preferred that
Cleaning solution containing efficient selective solvent is nmp solution, can be chemically reacted with EKC solution, so as to remove residual
EKC solution.The specific method of cleaning is for the third time：At a temperature of 223 DEG C, the wafer after second is cleaned, which is inverted in, to be contained
It is cleaned in the cleaning solution for having efficient selective solvent, scavenging period 10min.
Wafer after being cleaned using deionized water to third time carries out the 4th cleaning, is remained in after being cleaned three times with removal
The cleaning solution of crystal column surface.In this embodiment, it is preferred that the specific method of the 4th cleaning is：It, will at a temperature of 23 DEG C
Wafer after third time cleaning, which is inverted in deionized water, to be cleaned, scavenging period 5min.
Wafer after 4th cleaning is dried, to stay in the deionized water of crystal column surface after removing residual 4th cleaning.
In this embodiment, it is preferred that the specific method of drying is：At a temperature of 150 DEG C, the wafer after the 4th cleaning is carried out
Drying, drying time for 7 points 10 seconds.
CP tests are carried out to the wafer after cleaning, it can be seen that：Increase nmp solution passivation before using the cleaning of EKC solution,
Almost without the missing that tungsten occurs, yield is high, therefore can efficiently solve the problem of chip electrochemical reacts, compared to existing
There is technology, substantially increase the yield and reliability of wafer.
It is noted that the present embodiment prevents the method for cleaning wafer that tungsten corrodes, it can be clear by existing wet method
Washing machine platform is passivated wafer pretreatment, does not need to increase additional production equipment.Have in existing wet-cleaning board
Several reative cells, each step carry out in different reative cells.Each solution is put into each reative cell, passes through mechanical arm
Wafer is inverted successively in the solution of each reative cell, you can the cleaning method of the present embodiment is completed, it is simple and convenient, it is at low cost.
It should be noted that the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way,
Then in schema only display with it is of the invention in related component rather than component count, shape and size during according to actual implementation paint
System, kenel, quantity and the ratio of each component can be a kind of random change, and its assembly layout kenel also may be used during actual implementation
It can be increasingly complex.
In conclusion the present invention prevents the method for cleaning wafer that tungsten corrodes, have the advantages that：By to wafer table
Face is passivated pretreatment, so as to form one layer of passivation layer on the surface of tungsten, can effectively prevent electrochemical reaction, prevents
Only tungsten corrodes, and the tungsten in through-hole is avoided to lack, so as to avoid circuit malfunction, improves the yield and reliability of wafer.So this
Invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (9)
1. a kind of method for cleaning wafer for preventing tungsten from corroding, for forming the tungsten plug with crystal column surface using dry etch process
Connected metal conductive patterns, and the step of remove photoresist after, which is characterized in that the wafer cleaning side for preventing tungsten from corroding
Method includes at least：Pretreatment is passivated to the wafer using passivating solution, so that the crystal column surface is not led by the metal
The tungsten surface of electrical pattern covering forms passivation layer；Wherein, the specific method of the passivation pretreatment is：In 22 DEG C~24 DEG C of temperature
Under degree, the wafer is inverted in the passivating solution, and stand 10min~15min.
2. the method for cleaning wafer according to claim 1 for preventing tungsten from corroding, which is characterized in that the passivating solution is NMP
Solution.
3. the method for cleaning wafer according to claim 1 for preventing tungsten from corroding, which is characterized in that described to prevent what tungsten from corroding
Method for cleaning wafer further includes：Using the cleaning solution containing water-soluble metal corrosion inhibiter the is carried out to being passivated pretreated wafer
Primary cleaning, tentatively to remove high molecular polymer of the post-etch residue in the crystal column surface；Wherein, the first time cleaning
Specific method be：At a temperature of 65 DEG C~75 DEG C, will be passivated pretreated wafer be inverted in it is described containing water-soluble gold
Belong to and being cleaned in the cleaning solution of corrosion inhibiter, scavenging period is 5min~15min.
4. the method for cleaning wafer according to claim 3 for preventing tungsten from corroding, which is characterized in that described to prevent what tungsten from corroding
Method for cleaning wafer further includes：Wafer after being cleaned using the cleaning solution containing water-soluble metal corrosion inhibiter to first time carries out the
Secondary cleaning, to remove high molecular polymer of the post-etch residue in the crystal column surface again；Wherein, it cleans for described second
Specific method be：At a temperature of 65 DEG C~75 DEG C, the wafer after first time is cleaned is inverted in described containing water-soluble gold
Belong to and being cleaned in the cleaning solution of corrosion inhibiter, scavenging period is 5min~15min.
5. the method for cleaning wafer according to claim 4 for preventing tungsten from corroding, which is characterized in that described to prevent what tungsten from corroding
Method for cleaning wafer further includes：Wafer after being cleaned using the cleaning solution containing efficient selective solvent to second carries out third
Secondary cleaning remains in the cleaning solution containing water-soluble metal corrosion inhibiter of the crystal column surface after being cleaned twice with removal；Wherein,
The specific method of third time cleaning is：At a temperature of 22 DEG C~24 DEG C, the wafer after second is cleaned is inverted in institute
It states and is cleaned in the cleaning solution containing efficient selective solvent, scavenging period is 5min~15min.
6. the method for cleaning wafer according to claim 5 for preventing tungsten from corroding, which is characterized in that described to prevent what tungsten from corroding
Method for cleaning wafer further includes：Wafer after being cleaned using deionized water to third time carries out the 4th cleaning, to remove three times
The cleaning solution of the crystal column surface is remained in after cleaning；Wherein, the specific method of the 4th cleaning is：At 22 DEG C~24 DEG C
At a temperature of, the wafer after third time is cleaned is inverted in the deionized water and cleans, scavenging period for 3min~
8min。
7. the method for cleaning wafer according to claim 6 for preventing tungsten from corroding, which is characterized in that described to prevent what tungsten from corroding
Method for cleaning wafer further includes：By the 4th time cleaning after wafer dry, with remove it is residual 4th time cleaning after stay in the wafer
The deionized water on surface；Wherein, the specific method of the drying is：At a temperature of 140 DEG C~160 DEG C, the 4th time is cleaned
Wafer afterwards is dried, and drying time is 7min~8min.
8. the method for cleaning wafer of tungsten corrosion is prevented according to claim 3-6 any one of them, which is characterized in that described to contain
The cleaning solution of water-soluble metal corrosion inhibiter is EKC solution.
9. the method for cleaning wafer of tungsten corrosion is prevented according to claim 3-6 any one of them, which is characterized in that described to contain
The cleaning solution of efficient selective solvent is nmp solution.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1453835A (en) * | 2002-04-26 | 2003-11-05 | 旺宏电子股份有限公司 | Method of preventing tungsten plug from corrosion |
| CN102569022A (en) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning method after tungsten chemical-mechanical polishing |
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| US6077762A (en) * | 1997-12-22 | 2000-06-20 | Vlsi Technology, Inc. | Method and apparatus for rapidly discharging plasma etched interconnect structures |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1453835A (en) * | 2002-04-26 | 2003-11-05 | 旺宏电子股份有限公司 | Method of preventing tungsten plug from corrosion |
| CN102569022A (en) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning method after tungsten chemical-mechanical polishing |
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